BAS316WS Taiwan Semiconductor Small Signal Product 200mW High-Speed Switching SMD Diode FEATURES - Fast switching device (trr<4.0ns) - Surface mount device type - Moisture sensitivity level 1 - Matte Tin (Sn) lead finish - Pb free version and RoHS compliant - Packing code with suffix "G" means green compound (halogen-free) SOD-323F MECHANICAL DATA - Case: Flat lead SOD-323F small outline plastic package - Terminal: Matte tin plated, lead free., solderable per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed : 260°C/10s - Polarity: Indicated by cathode band - Weight: 4.6 ± 0.5 mg - Marking Code: W2 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) PARAMETER SYMBOL VALUE UNIT Power Dissipation PD 200 mW Average Forward Current IO 250 mA Non-Repetitive Peak Forward Surge Current Pulse Width = 1 μs Pulse Width = 1 ms 4.0 IFRM TJ Operating Junction Temperature TSTG Storage Temperature Range PARAMETER Reverse Breakdown Voltage IR = 100 μA IF = 10 mA IF = 50 mA Junction Capacitance Reverse Recovery Time Document Number: DS_S1501001 VR = 75 V VR = 25 V o C -65 to + 150 o C MIN MAX UNIT V(BR) 100 - V - 0.715 - 0.855 - 1.000 - 1.250 - 1 VF IF = 150 mA Reverse Leakage Voltage 150 SYMBOL IF = 1.0 mA Forward Voltage A 1.0 IR 0.03 V μA VR = 0 , f = 1.0 MHz CJ - 1.5 pF IF = IR = 10 mA , Irr = 0.1 × IR trr - 4.0 ns Version: B15 BAS316WS Taiwan Semiconductor Small Signal Product RATINGS AND CHARACTERISTICS CURVES (TA=25°C unless otherwise noted) Fig. 2 Reverse Current As A Function of Junction Temperature Fig. 1 Typical Forward Characteristics 100 275 VR=75V 250 225 Reverse Current (μA) Instantaneous Forward Current (mA) 300 200 175 150 125 100 75 VR=75V 10 VR=25V max 1 0.1 typ 50 typ 25 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0.01 0 20 40 60 Instantaneous Forward Voltage (V) 100 120 140 Junction Temperature 160 180 200 (oC) Fig. 4 Typical Junction Capacitance Fig. 3 Admissible Power Dissipation Curve 0.8 250 Junction Capacitance (pF) 200 Power Dissipation (mW) 80 150 100 50 0 0 25 50 75 100 125 Ambient Temperature (°C) Document Number: DS_S1501001 150 175 0.6 0.4 0.2 0 0 2 4 6 8 10 12 14 16 Reverse Voltage (V) Version: B15 BAS316WS Taiwan Semiconductor Small Signal Product ORDER INFORMATION (EXAMPLE) BAS316WS RRG Green compound code Packing code Part no. DIMENSIONS SOD-323F DIM. Unit (mm) Unit (inch) Min Max Min Max A 1.15 1.35 0.045 0.053 B 2.30 2.80 0.091 0.110 C 0.25 0.40 0.010 0.016 D 1.60 1.80 0.063 0.071 E 0.80 1.10 0.031 0.043 F 0.05 0.25 0.002 0.010 SUGGESTED PAD LAYOUT Unit (mm) Unit (inch) Typ. Typ. X 0.710 0.028 X1 2.900 0.114 Y 0.403 0.016 DIM. Note: 1. The suggested land pattern dimensions have been provided for refernece only, as actual pad layouts may vary depending on application. Document Number: DS_S1501001 Version: B15 BAS316WS Taiwan Semiconductor Small Signal Product Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied,to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_S1501001 Version: B15