Spec. No. : C654N3 Issued Date : 2017.08.02 Revised Date : Page No. : 1/7 CYStech Electronics Corp. NPN Epitaxial Planar Transistor BTD2195SN3 Description The BTD2195SN3 is designed for use in general purpose amplifier and low speed switching application. Pb-free lead plating package process is adopted. Equivalent Circuit Outline SOT-23 BTD2195SN3 C C B R1≒5K R2≒120 E E B：Base C：Collector E：Emitter B Ordering Information Device BTD2195SN3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 :3000 pcs/tape & reel, 7” reel Product rank, zero for no rank products Product name BTD2195SN3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C654N3 Issued Date : 2017.08.02 Revised Date : Page No. : 2/7 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Power Dissipation @ TA=25°C Power Dissipation @ TC=25°C Opeearting Junction Temperature Range Storage Temperature Range Symbol VCBO VCEO VEBO IC ICP RθJA RθJC PD Tj Tstg Limits 150 150 5 2 4 (Note 1) 500 100 0.3 1.5 -55~+175 -55~+175 Unit V A °C/W W °C Note : 1. Single Pulse Pw≦350μs, Duty≦2%. Characteristics (Ta=25°C) Symbol BVCBO ICBO ICEO IEBO *VCE(sat) *VBE(on) *hFE1 *hFE2 Cob Min. 150 - Typ. - 2000 1000 - - Max. 100 1 2 1.2 2.2 200 Unit V nA μA mA V V pF Test Conditions IC=100μA, IE=0 VCB=150V, IE=0 VCE=150V, IB=0 VEB=5V, IC=0 IC=2A, IB=2mA VCE=4V, IC=2A VCE=4V, IC=1A VCE=4V, IC=2A VCB=10V, IE=0A, f=1MHz *Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2% Recommended Soldering Footprint BTD2195SN3 CYStek Product Specification Spec. No. : C654N3 Issued Date : 2017.08.02 Revised Date : Page No. : 3/7 CYStech Electronics Corp. Typical Characteristics Current Gain vs Collector Current Current Gain vs Collector Current 100000 100000 VCE =4V VCE =3V 25°C 75°C 10000 125°C HFE, Current Gain HFE, Current Gain 25°C 1000 100 10000 75°C 25 °C 1000 0 °C 100 0 °C -40 °C -40 °C 10 10 1 10 100 1000 IC , Collector Current(mA) 10000 1 10000 10000 In descending order : -40°C, 0°C, 25°C, 75°C, 125° C VCESAT, Saturation Voltage(mV) VCESAT, Saturation Voltage(mV) 10000 Saturation Voltage vs Collector Current Saturation Voltage vs Collector Current 1000 VCESAT@IC=250IB VCESAT@IC=500IB 1000 In descending order : -40°C, 0°C, 25°C, 75°C, 125°C 100 100 10 100 1000 IC , Collector Current(mA) 10000 10 Saturation Voltage vs Collector Current 100 1000 IC , Collector Current(mA) 10000 Saturation Voltage vs Collector Current 10000 VCESAT@IC=1000IB 1000 In descending order : -40°C, 0°C, 25°C, 75°C, 125°C 100 VBESAT, Saturation Voltage(mV) 10000 VCESAT, Saturation Voltage(mV) 10 100 1000 IC , Collector Current(mA) VBESAT@IC=250IB 1000 In descending order : -40°C, 0°C, 25°C, 75°C, 125°C 100 10 BTD2195SN3 100 1000 IC , Collector Current(mA) 10000 10 100 1000 IC , Collector Current(mA) 10000 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C654N3 Issued Date : 2017.08.02 Revised Date : Page No. : 4/7 Typical Characteristics(Cont.) Built-in Diode Characteristics On Voltage vs Collector Current 10000 10000 1000 VF, Forward Voltage(mV) VBEON, On Voltage(mV) VBEON@VCE =4V -40°C 0°C 25°C 85°C 140°C 1000 -40°C 0°C 25°C 85°C 140°C 100 100 1 10 100 1000 IC , Collector Current(mA) 1 10000 Power Derating Curves 10 100 1000 IF, Forward Current(mA) 10000 Capacitance vs Reverse-Biased Voltage 0.35 100 0.25 Capacitance(pF) PD, Power Dissipation(W) 0.3 0.2 0.15 0.1 Cob Cib 0.05 10 0 0 25 50 75 100 125 150 175 TA, Ambient Temperature(℃) 200 0.1 1 10 VR , Reverse-Biased Voltage(V) 100 Power Derating Curve 1.6 PD, Power Dissipation(W) 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 BTD2195SN3 25 50 75 100 125 150 TC , Case Temeprature(℃) 175 200 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C654N3 Issued Date : 2017.08.02 Revised Date : Page No. : 5/7 Reel Dimension Carrier Tape Dimension BTD2195SN3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C654N3 Issued Date : 2017.08.02 Revised Date : Page No. : 6/7 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. BTD2195SN3 CYStek Product Specification Spec. No. : C654N3 Issued Date : 2017.08.02 Revised Date : Page No. : 7/7 CYStech Electronics Corp. SOT-23 Dimension Device Code DP xx Marking: Date Code: Year+Month Year: 7→2017, 8→2018 Month: 1→1, 2→2,‧‧‧ 9→9, A→10, B→11, C→12 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Style : Pin 1.Base 2.Emitter 3.Collector Inches Min. Max. 0.1102 0.1204 0.0472 0.0669 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0000 0.0040 DIM A B C D G H Millimeters Min. Max. 2.80 3.04 1.20 1.70 0.89 1.30 0.30 0.50 1.70 2.30 0.00 0.10 DIM J K L S V L1 Inches Min. Max. 0.0032 0.0079 0.0118 0.0266 0.0335 0.0453 0.0830 0.1161 0.0098 0.0256 0.0118 0.0197 Millimeters Min. Max. 0.08 0.20 0.30 0.67 0.85 1.15 2.10 2.95 0.25 0.65 0.30 0.50 Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material : • Lead : Pure tin plated. • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTD2195SN3 CYStek Product Specification