isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUW46 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 450V(Min.) ·High Speed Switching APPLICATIONS ·Intended in fast switching applications for high output powers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 30 A IB Base Current-Continuous 10 A PT Total Power Dissipation @ TC≤25℃ 175 W TJ Junction Temperature 200 ℃ -65~200 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case isc website：www.iscsemi.cn MAX UNIT 1.0 ℃/W 1 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUW46 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX 450 UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB= 2A 1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 7A; IB= 1A 1.5 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 10A; IB= 2A 1.8 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 7A; IB= 1A 1.4 V IEBO Emitter cut-off current VEB=7V; IC=0 1.0 mA ICES Collector Cutoff Current VCE= 900V;VBE= 0 VCE= 900V;VBE= 0; Tc= 125℃ 0.5 3.0 mA hFE DC Current Gain IC= 1A; VCE= 5V 15 V 50 Switching Times; Resistive Load ton Turn-On Time ts Storage Time IC= 10A; IB1= 2A; VCC=250V 0.75 μs 3.0 μs 0.8 μs IC= 10A; IB1= -IB2= 2A; VCC=250V tf Fall Time isc website：www.iscsemi.cn 2