DMN3150LW N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance: RDS(ON) < 88mΩ @ VGS = 4.5V RDS(ON) < 138mΩ @ VGS = 2.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Case: SOT323 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Annealed over Alloy 42 Leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.006 grams (Approximate) SOT323 D D G G S S Top View Ordering Information (Note 4) Part Number DMN3150LW-7 Notes: Pin Configuration Internal Schematic Case SOT323 Packaging 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 31N Date Code Key Year Code Month Code 2008 V Jan 1 DMN3150LW Document number: DS31514 Rev. 2 - 2 ~ ~ Feb 2 YM Marking Information 2016 D Mar 3 31N = Product Type Marking Code YM = Date Code Marking Y = Year (ex: D = 2016) M = Month (ex: 9 = September) 2017 E Apr 4 May 5 2018 F Jun 6 1 of 5 www.diodes.com 2019 G Jul 7 2020 H Aug 8 2021 I Sep 9 2022 J Oct O Nov N 2023 K Dec D January 2016 © Diodes Incorporated DMN3150LW Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Drain Source Voltage Gate-Source Voltage Drain Current (Note 5) Drain Current (Note 5) Body-Diode Continuous Current (Note 5) Symbol VDSS VGSS TA = +25°C TA = +70°C Pulsed Value 28 12 1.6 1.2 6.4 1.5 ID IDM IS Unit V V A A A Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5) Operating and Storage Temperature Range Electrical Characteristics Symbol PD RJA TJ, TSTG Value 350 357 -55 to +150 (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Symbol Min Typ Max Unit BVDSS IDSS 28 800 80 800 V nA V IGSS ON CHARACTERISTICS (Note 6) Gate Threshold Voltage VGS(TH) Static Drain-Source On-Resistance RDS(ON) |Yfs| VSD 0.62 0.94 73 115 5.4 1.4 88 138 1.16 Ciss Coss Crss 305 74 48 Gate-Body Leakage Forward Transconductance Source-Drain Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Notes: Unit mW °C/W °C nA m S V pF pF pF Test Condition VGS = 0V, ID = 250A VDS = 28V, VGS = 0V VGS = ±12V, VDS = 0V VGS = ±19V, VDS = 0V VDS = VGS, ID = 250A VGS = 4.5V, ID = 1.6A VGS = 2.5V, ID = 1.2A VDS = 5V, ID = 2.7A VGS = 0V, IS = 1.5A VDS = 5V, VGS = 0V f = 1.0MHz 5. Device mounted on 1in2 FR-4 PCB on 2oz. Copper. t ≤ 10 sec. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. DMN3150LW Document number: DS31514 Rev. 2 - 2 2 of 5 www.diodes.com January 2016 © Diodes Incorporated DMN3150LW 8 8 VDS = 5V Pulsed 6 6 4 4 2 2 0 0 0.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 1 1.5 2 2.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 3 0.16 0.12 C, CAPACITANCE (pF) RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE () 1 MHz f f== 1MHz o 25癈 TTAA==25 C VGS = 2.5V 0.08 VGS = 4.5V VGS = 10V Ciss Coss 0.04 Crss 0 0 2 4 6 ID, DRAIN CURRENT (A) Fig. 3 On-Resistance vs. Drain Current and Gate Voltage 8 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 4 Typical Total Capacitance 1.4 1.0 0.8 0.6 RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.2 1.6 0.4 1.4 VGS = 4.5V ID = 1.6A 1.2 1.0 0.8 0.6 -50 0 25 50 75 100 125 150 o TA, AMBIENT TEMPERATURE ((C) C) Fig. 6 Normalized Static Drain-Source On-Resistance vs. Ambient Temperature DMN3150LW Document number: DS31514 Rev. 2 - 2 3 of 5 www.diodes.com -25 January 2016 © Diodes Incorporated DMN3150LW 8 6 4 2 0 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Package Outline Dimensions Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version. SOT323 D A2 c A1 e a L b E E1 F SOT323 Dim Min Max Typ A1 0.00 0.10 0.05 A2 0.90 1.00 0.95 b 0.25 0.40 0.30 c 0.10 0.18 0.11 D 1.80 2.20 2.15 E 2.00 2.20 2.10 E1 1.15 1.35 1.30 e 0.650 BSC e1 1.20 1.40 1.30 F 0.375 0.475 0.425 L 0.25 0.40 0.30 a 8° All Dimensions in mm e1 DMN3150LW Document number: DS31514 Rev. 2 - 2 4 of 5 www.diodes.com January 2016 © Diodes Incorporated DMN3150LW Suggested Pad Layout Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version. SOT323 X Y Y1 Dimensions C G X Y Y1 G Value (in mm) 0.650 1.300 0.470 0.600 2.500 C IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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