ALSC AS4LC256K16EO 3.3v 256k x 16 cmos dram (edo) Datasheet

AS4LC256K16EO
®
3.3V 256K X 16 CMOS DRAM (EDO)
Features
• EDO page mode
• 5V I/O tolerant
• 512 refresh cycles, 8 ms refresh interval
• Organization: 262,144 words × 16 bits
• High speed
- 45/60 ns RAS access time
- 10/12/15/20 ns column address access time
- 7/10/10 ns CAS access time
- RAS-only or CAS-before-RAS refresh or self refresh
• Read-modify-write
• LVTTL-compatible, three-state I/O
• JEDEC standard packages
• Low power consumption
- Active: 280 mW max (AS4LC256K16EO-35)
- Standby: 2.8 mW max, CMOS I/O (AS4LC256K16EO35)
- 400 mil, 40-pin SOJ
- 400 mil, 40/44-pin TSOP II
• 3.3V power supply
• Latch-up current > 200 mA
Pin arrangement
Pin designation
I/O6
I/O7
NC
NC
WE
RAS
NC
A0
A1
A2
A3
Vcc
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
AS4LC256K16EO
Vcc
I/O0
I/O1
I/O2
I/O3
Vcc
I/O4
I/O5
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
GND
I/O15
I/O14
I/O13
I/O12
GND
I/O11
I/O10
I/O9
I/O8
NC
LCAS
UCAS
OE
A8
A7
A6
A5
A4
GND
VCC
I/O0
I/O1
I/O2
I/O3
VCC
I/O4
I/O5
I/O6
I/O7
NC
NC
WE
RAS
NC
A0
A1
A2
A3
VCC
1
2
3
4
5
6
7
8
9
10
13
14
15
16
17
18
19
20
21
22
AS4LC256K16EO
TSOP II
SOJ
44
43
42
41
40
39
38
37
36
35
32
31
30
29
28
27
26
25
24
23
GND
I/O15
I/O14
I/O13
I/O12
GND
I/O11
I/O10
I/O9
I/O8
NC
LCAS
UCAS
OE
A8
A7
A6
A5
A4
GND
Pin(s)
Description
A0 to A8
Address inputs
RAS
Row address strobe
I/O0 to I/O15
Input/output
OE
Output enable
UCAS
Column address strobe, upper byte
LCAS
Column address strobe, lower byte
WE
Read/write control
VCC
Power (3.3V ± 0.3V)
GND
Ground
Selection guide
Symbol
AS4LC256K16EO-35
AS4LC256K16EO-45
AS4LC256K16EO-60
Unit
Maximum RAS access time
tRAC
35
45
60
ns
Maximum column address access time
tCAA
17
20
25
ns
Maximum CAS access time
tCAC
7
10
10
ns
Maximum output enable (OE) access time
tOEA
7
10
10
ns
Minimum read or write cycle time
tRC
50
80
100
ns
Minimum EDO page mode cycle time
tPC
15
17
30
ns
Maximum operating current
ICC1
70
60
50
mA
Maximum CMOS standby current
ICC2
200
200
200
µA
4/11/01; V.1.1
Alliance Semiconductor
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Copyright © Alliance Semiconductor. All rights reserved.
AS4LC256K16EO
®
Functional description
The AS4LC256K16EO is a high-performance 4 megabit CMOS Dynamic Random Access Memory (DRAM) organized as
262,144 words by 16 bits. The AS4LC256K16EO is fabricated with advanced CMOS technology and designed with innovative
design techniques resulting in high speed, extremely low power and wide operating margins at component and system levels.
The AS4LC256K16EO features a high speed page mode operation in which high speed read, write and read-write are
performed on any of the 512 × 16 bits defined by the column address. The asynchronous column address uses an extremely
short row address capture time to ease the system level timing constraints associated with multiplexed addressing. Very fast CAS
to output access time eases system design.
Refresh on the 512 address combinations of A0 to A8 during an 8 ms period is accomplished by performing any of the
following:
• RAS-only refresh cycles
• Hidden refresh cycles
• CAS-before-RAS refresh cycles
• Normal read or write cycles
• Self refresh cycles
The AS4LC256K16EO is available in standard 40-pin plastic SOJ and 40/44-pin TSOP II packages compatible with widely
available automated testing and insertion equipment. System level features include single power supply of 3.3V ± 0.3V
tolerance and direct interface with TTL logic families.
REFRESH
CONTROLLER
Logic block diagram
RAS
UCAS
RAS CLOCK
GENERATOR
CAS CLOCK
GENERATOR
A0
A1
A2
A3
A4
A5
A6
A7
A8
OE
512×512×16
ARRAY
(4,194,304)
SUBSTRATE
BIAS
GENERATOR
LCAS
WE
WE CLOCK
GENERATOR
Recommended operating conditions
Parameter
Supply voltage
Input voltage
4/11/01; V.1.1
I/O0 to I/O15
SENSE AMP
ROW DECODER
GND
DATA
I/O
BUFFER
COLUMN DECODER
ADDRESS BUFFERS
VCC
Symbol
Min
Typ
(Ta = 0°C to +70°C)
Max
Unit
VCC
3.0
3.3
3.6
V
GND
0.0
0.0
0.0
V
VIH
2.0
–
VCC + 1
V
VIL
–1.0
–
0.8
V
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AS4LC256K16EO
®
Absolute maximum ratings
Parameter
Symbol
Min
Max
Unit
Input voltage
Vin
-1.0
+7.0
V
Output voltage
Vout
-1.0
+7.0
V
Power supply voltage
VCC
-1.0
+7.0
V
Operating temperature
TOPR
0
+70
°C
Storage temperature (plastic)
TSTG
-55
+150
°C
Soldering temperature × time
TSOLDER
–
260 × 10
o
Power dissipation
PD
–
1
W
Short circuit output current
Iout
–
50
mA
200
–
mA
Latch-up current
C × sec
NOTE: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
DC electrical characteristics
-35
-45
-60
Parameter
Symbol
Test conditions
Min
Max
Min
Max
Min
Input leakage
current
IIL
0V ≤ Vin ≤ +5.5V
pins not under test = 0V
-10
10
-10
10
-10
10
µA
Output leakage
current
IOL
DOUT disabled,
0V ≤ Vout ≤ +5.5V
-10
10
-10
10
-10
10
µA
Operating power
supply current
ICC1
RAS, UCAS, LCAS, address cycling;
tRC=min
–
70
–
60
–
50
mA
TTL standby power
ICC2
supply current
RAS = UCAS = LCAS = VIH
–
200
–
200
–
200 µA
Average power
supply current, RAS ICC3
refresh mode
RAS cycling,
UCAS = LCAS = VIH,
tRC = min
–
50
–
45
–
40
mA
1
EDO page mode
average power
supply current
ICC4
RAS=UCAS=LCAS=VIL,
address cycling: tSC = min
–
40
–
35
–
35
mA
1,2
CMOS standby
power supply
current
ICC5
RAS=UCAS=LCAS= VCC - 0.2V
–
400
–
400
–
400 µA
CAS-before-RAS
refresh power
supply current
ICC6
RAS, UCAS, LCAS, cycling;
tRC = min
–
50
–
50
–
50
mA
VOH
IOUT = -2 mA
2.4
–
2.4
–
2.4
–
V
VOL
IOUT = 2 mA
–
0.4
–
0.4
–
0.4
V
ICC7
RAS = UCAS = LCAS=VIL,
WE = OE = A0-A8 = VCC-0.2V,
DQ0-DQ15 = VCC-0.2V,
0.2V are open
-
400
-
400
-
400 µA
Output Voltage
Self refresh current
4/11/01; V.1.1
Alliance Semiconductor
Max Unit
Note
1,2
1
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®
AC parameters common to all waveforms
-35
Std Symbol Parameter
-45
-60
Min
Max
Min
Max
Min
Max Unit
Notes
tRC
Random read or write cycle time
50
–
80
–
100
–
ns
tRP
RAS precharge time
15
–
20
–
20
–
ns
tRAS
RAS pulse width
35
75K
45
75K
60
75K
ns
tCAS
CAS pulse width
6
–
10
–
10
–
ns
tRCD
RAS to CAS delay time
12
18
18
32
15
45
ns
6
tRAD
RAS to column address delay time
8
14
13
23
15
30
ns
7
tRSH(R)
CAS to RAS hold time (read cycle)
10
–
10
–
12
–
ns
tCSH
RAS to CAS hold time
35
–
45
–
60
–
ns
tCRP
CAS to RAS precharge time
5
–
5
–
5
–
ns
tASR
Row address setup time
0
–
0
–
0
–
ns
tRAH
Row address hold time
6
–
8
–
9
–
ns
tT
Transition time (rise and fall)
1.5
50
1.5
50
1.5
50
ns
4,5
tREF
Refresh period
–
8
–
8
–
8
ms
3
tCLZ
CAS to output in low Z
0
–
3
–
3
–
ns
8
Read cycle
-35
Std Symbol
Parameter
tRAC
-45
-60
Min
Max
Min
Max
Min
Max
Access time from RAS
–
35
–
45
–
60
ns
6
tCAC
Access time from CAS
–
7
–
10
–
10
ns
6,13
tAA
Access time from address
–
17
–
22
–
30
ns
7,13
tAR(R)
Column add hold from RAS
28
–
35
–
40
–
ns
tRCS
Read command setup time
0
–
0
–
0
–
ns
tRCH
Read command hold time to CAS
0
–
0
–
0
–
ns
9
tRRH
Read command hold time to RAS
0
–
0
–
0
–
ns
9
tRAL
Column address to RAS Lead time
18
–
25
–
30
–
ns
tCPN
CAS precharge time
4
–
5
–
5
–
ns
tOFF
Output buffer turn-off time
0
8
0
10
0
10
ns
4/11/01; V.1.1
Alliance Semiconductor
Unit
Notes
8,10
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AS4LC256K16EO
®
Write cycle
-35
Std Symbol Parameter
-45
-60
Min
Max
Min
Max
Min
Max Unit
Notes
tASC
Column address setup time
0
–
0
–
0
–
ns
tCAH
Column address hold time
5
–
6
–
10
–
ns
tAWR
Column address hold time to RAS
28
–
35
–
40
–
ns
tWCS
Write command setup time
0
–
0
–
0
–
ns
11
tWCH
Write command hold time
0
–
0
–
0
–
ns
11
tWCR
Write command hold time to RAS
28
–
35
–
40
–
ns
tWP
Write command pulse width
5
–
6
–
10
–
ns
tRWL
Write command to RAS lead time
11
–
12
–
12
–
ns
tCWL
Write command to CAS lead time
11
–
12
–
12
–
ns
tDS
Data-in setup time
0
–
0
–
0
–
ns
12
tDH
Data-in hold time
5
–
6
–
10
–
ns
12
tDHR
Data-in hold time to RAS
28
–
35
–
45
–
ns
Read-modify-write cycle
-35
Std Symbol Parameter
-45
-60
Min
Max
Min
Max
Min
Max Unit
Notes
tRWC
Read-write cycle time
105
–
115
–
120
–
ns
tRWD
RAS to WE delay time
54
–
58
–
60
–
ns
11
tCWD
CAS to WE delay time
28
–
30
–
30
–
ns
11
tAWD
Column address to WE delay time
35
–
38
–
40
–
ns
11
tRSH(W)
CAS to RAS hold time (write)
10
–
10
–
12
–
ns
tCAS(W)
CAS pulse width (write)
15
–
15
–
15
–
ns
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AS4LC256K16EO
®
EDO page mode cycle
-35
-45
-60
Std
Symbol
Parameter
Min
Max
Min
Max
Min
tPC
Read or write cycle time (fast page)
15
–
17
–
25
–
ns
14
tCAP
Access time from CAS precharge
–
19
–
21
–
23
ns
13
tCP
CAS precharge time (fast page)
4
–
5
–
6
–
ns
tPCM
EDO page mode RMW cycle
56
–
58
–
60
–
ns
tCRW
Page mode CAS pulse width (RMW)
44
–
46
–
50
–
ns
tRASP
RAS pulse width
35
75K
45
75K
60
75K
ns
Max Unit
Notes
Refresh cycle
-35
-45
-60
Std
Symbol
Parameter
Min
Max
Min
Max
Min
tCSR
CAS setup time (CAS-before-RAS)
10
–
10
–
10
–
ns
3
tCHR
CAS hold time (CAS-before-RAS)
8
–
8
–
10
–
ns
3
tRPC
RAS precharge to CAS hold time
0
–
0
–
0
–
ns
tCPT
CAS precharge time
(CAS-before-RAS counter test)
8
–
8
–
8
–
ns
Max Unit
Notes
Output enable
-35
Std
Symbol
Parameter
tROH
-45
-60
Min
Max
Min
Max
Min
Max Unit
RAS hold time referenced to OE
5
–
5
–
5
–
ns
tOEA
OE access time
–
10
–
10
–
10
ns
tOED
OE to data delay
5
–
5
–
8
–
ns
tOEZ
Output buffer turnoff delay from OE
–
8
–
8
–
8
ns
tOEH
OE command hold time
8
–
8
–
8
–
ns
Notes
8
Self refresh cycle
-35
Std Symbol Parameter
-45
-60
Min
Max
Min
Max
Min
Max
Unit
100K
–
100K
–
100K
–
ns
tRASS
RAS pulse width
(CBR self refresh)
tRPS
RAS precharge time
(CBR self refresh)
85
–
85
–
85
–
ns
tCHS
CAS hold time
(CBR self refresh)
30
–
30
–
30
–
ns
4/11/01; V.1.1
Alliance Semiconductor
Notes
P. 7 of 25
AS4LC256K16EO
®
Notes
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
ICC1, ICC3, ICC4, and ICC6 depend on cycle rate.
ICC1 and ICC4 depend on output loading. Specified values are obtained with the output open.
An initial pause of 200 µs is required after power-up followed by any 8 RAS cycles before proper device operation is achieved. In the case of an internal
refresh counter, a minimum of 8 CAS-before-RAS initialization cycles instead of 8 RAS cycles are required. 8 initialization cycles are required after
extended periods of bias without clocks (greater than 8 ms).
AC Characteristics assume tT = 5 ns. All AC parameters are measured with a load equivalent to two TTL loads and 60 pF, VIL (min) ≥ GND and VIH (max)
≤ VCC.
VIH (min) and VIL (max) are reference levels for measuring timing of input signals. Transition times are measured between VIH and VIL.
Operation within the tRCD (max) limit insures that tRAC (max) can be met. tRCD (max) is specified as a reference point only. If tRCD is greater than the
specified tRCD (max) limit, then access time is controlled exclusively by tCAC.
Operation within the tRAD (max) limit insures that tRAC (max) can be met. tRAD (max) is specified as a reference point only. If tRAD is greater than the
specified tRAD (max) limit, then access time is controlled exclusively by tAA.
Assumes three state test load (5 pF and a 380 Ω Thevenin equivalent).
Either tRCH or tRRH must be satisfied for a read cycle.
tOFF (max) defines the time at which the output achieves the open circuit condition; it is not referenced to output voltage levels.
tWCS, tWCH, tRWD, tCWD and tAWD are not restrictive operating parameters. They are included in the datasheet as electrical characteristics only. If tWS ≥ tWS
(min) and tWH ≥ tWH (min), the cycle is an early write cycle and data out pins will remain open circuit, high impedance, throughout the cycle. If tRWD
≥ tRWD (min), tCWD ≥ tCWD (min) and tAWD ≥ tAWD (min), the cycle is a read-write cycle and the data out will contain data read from the selected cell.
If neither of the above conditions is satisfied, the condition of the data out at access time is indeterminate.
These parameters are referenced to CAS leading edge in early write cycles and to WE leading edge in read-write cycles.
Access time is determined by the longest of tCAA or tCAC or tCAP.
tASC ≥ tCP to achieve tPC (min) and tCAP (max) values.
These parameters are sampled and not 100% tested.
Key to switching waveform
Undefined/don’t care
Rising input
Falling input
Read cycle waveform
tRC
tRAS
tRCD
tRSH
tRP
RAS
tCSH
tCRP
tCAH
tASC
tRCS
tCAS
UCAS,
tAR
LCAS
tRAD
tASR
Address
tRAL
tRAH
Row Address
Col Address
tRRH
tRCH
WE
tROH
OE
tOEZ
tRAC
tAA
tOFF
tOEA
tCAC
tCLZ
Data Out
I/O
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AS4LC256K16EO
®
Upper byte read cycle waveform
tRC
tRAS
tRP
RAS
tRCD
tRSH
tCSH
tCRP
tCRP
tCAS
UCAS
tCRP
LCAS
tRAH
tRAL
tRAD
tASC
tASR
Address
tCAH
Row
Column
tRCH
tRRH
tRCS
WE
tROH
OE
tOEA
tRAC
tOEZ
tAA
tCAC
tCLZ
tOFF
Upper I/O
Data Out
Lower I/O
Lower byte read cycle waveform
tRC
tRAS
tRP
RAS
tRCD
tRSH
tCSH
tCRP
tCRP
tCAS
LCAS
tCRP
UCAS
tASC
tRAH
tRAL
tRAD
tASR
Address
tCAH
Row
Column
tRCS
tRRH
tRCH
WE
tROH
OE
Upper I/O
tOEA
tRAC
tOEZ
tAA
tCAC
tOFF
tCLZ
Data Out
Lower I/O
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AS4LC256K16EO
®
Early write cycle waveform
tRC
tRAS
tRP
RAS
tCSH
tRSH
tCRP
tRCD
tCAS
UCAS,
tAWR
LCAS
tRAD
tRAL
tASC
tASR
Address
tRAH
tCAH
Row Address
Col Address
tWCR
tCWL
tRWL
tWP
tWCS
tWCH
WE
OE
tDHR
tDH
tDS
I/O
Data In
Upper byte early write cycle waveform
tRC
tRAS
tRP
RAS
tAWR
tASR
tRAD
tRAL
tRAH
Address
Row Address
Column Address
tCAH
tRSH
tASC
tRCD
tCSH
tCAS
tCRP
tCRP
UCAS
tCRP
tRPC
LCAS
tCWL
tWCH
tWCS
tRWL
tWCR
tWP
WE
OE
tDHR
tDS
Upper I/O
tDH
Data In
Lower I/O
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Lower byte early write cycle waveform
tRC
tRAS
tRP
RAS
tAWR
tRAD
tASR
Address
tRAL
tRAH
Row Address
Column Address
tCRP
tRPC
UCAS
tASC
tCAH
tRCD
tCAS
tCSH
tRSH
tCRP
tCRP
LCAS
tWCR
tRWL
tCWL
tWCH
tWCS
tWP
WE
OE
Upper I/O
tDHR
tDS
tDH
Lower I/O
Data In
Write cycle waveform
(OE controlled)
tRC
tRAS
tRP
RAS
tCSH
tCRP
tRSH
tCAS
tRCD
UCAS,
LCAS
tRAL
tAWR
tRAD
tASR
Address
tASC
tRAH
tCAH
Row Address
Col Address
tWCR
tRWL
tCWL
tWP
WE
tOEH
OE
tDHR
tOED
I/O
4/11/01; V.1.1
tDS
tDH
Data In
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®
Upper byte write cycle waveform
(OE controlled)
tRC
tRAS
tRP
RAS
tRAD
tRAL
tAWR
tASR
Address
tRAH
Row Address
Column Address
tCSH
tRSH
tRCD
tCAH
tCRP
tASC
tCAS
tCRP
UCAS
tCRP
tRPC
LCAS
tCWL
tRWL
tWP
WE
tOEH
OE
tDS
tDH
Upper I/O
Data In
tOED
Lower I/O
Lower byte write cycle waveform
(OE controlled)
tRC
tRAS
tRP
RAS
tRAD
tAWR
tASR
tRAL
tRAH
Address
Row Address
Column Address
tCAH
tCAS
tRCD
tCSH
tCRP
tACS
tRSH
tCRP
LCAS
tCRP
tRPC
UCAS
tCWL
tRWL
tWP
WE
tOEH
OE
Upper I/O
tDH
tDS
Lower I/O
4/11/01; V.1.1
Data In
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Read-modify-write cycle waveform
tRWC
tRAS
tRP
RAS
tCAS
tCRP
tRCD
tRSH
tCSH
UCAS,
LCAS
tAR
tRAL
tRAD
tASR
Address
tASC
tRAH
tCAH
Row Address
Col Address
tRWL
tRWD
tCWL
tAWD
tRCS
WE
tCWD
tOEA
tWP
tOED
tOEZ
OE
tRAC
tAA
tCAC
tCLZ
I/O
4/11/01; V.1.1
Data Out
Alliance Semiconductor
tDS
tDH
Data In
P. 13 of 25
AS4LC256K16EO
®
Upper byte read-modify-write cycle waveform
tRWC
tRAS
tRP
RAS
tCSH
tRCD
tCAS
tRSH
tCRP
tCRP
UCAS
tCRP
tRPC
LCAS
tRAD
tACS
tASR
tRAL
tCAH
tRAH
Address
Row
Column Address
tRWD
tCWL
tAWD
tRWL
tCWD
tRCS
WE
tWP
tOEA
OE
tDS
tOED
Upper Input
tCLZ
tCAC
Data In
tAA
tOEZ
tRAC
Upper Output
Data Out
tOED
Lower Input
Lower Output
Data Out
4/11/01; V.1.1
Alliance Semiconductor
P. 14 of 25
AS4LC256K16EO
®
Lower byte read-modify-write cycle waveform
tRWC
tRAS
tRP
RAS
tRPC
tCRP
UCAS
tCSH
tCAS
tRCD
tCRP
tRSH
tCRP
LCAS
tRAD
tASR
tRAL
tACS
tCAH
tRAH
Address
Row
Column Address
tCWL
tRWD
tRWL
tAWD
tRCS
tCWD
tWP
WE
tOEA
OE
Upper Input
Upper Output
Data Out
tDS
tOED
Lower Input
tRAC
tAA
tCAC
tCLZ
Data In
tOEZ
Lower Output
Data Out
4/11/01; V.1.1
Alliance Semiconductor
P. 15 of 25
AS4LC256K16EO
®
EDO page mode read cycle waveform
tRASP
tRP
RAS
tCSH
tCRP
tRSH
tRCD
UCAS,
LCAS
tCAS
tCP
tPC
tAR
tCAH
tRAD
tRAL
tRAH
tASR
tASC
Row
Address
Col Address
Col Address
tRCS
Col Address
tRCS
tRCH
tRRH
tRCH
WE
tOEA
tOEA
OE
tRAC
tCAP
tCLZ
tCAC
tAA
tCAC
I/O
Data Out
Data Out
EDO page mode byte read cycle waveform
tRP
tRASP
RAS
tCSH
tCRP
tRSH
tCAS
tCAS
tRCD
tCRP
UCAS
tCP
tPC
tPC
tCAS
tCRP
Address
tCAH
tRAH
tRAD
tASR
Row
tRAL
tASC
tCAH
tASC
Column 1
tRPC
tCP
LCAS
tCAH
tASC
Column 2
Column n
tRCS
tRCS
tRCS
tRCH
tRCH
WE
tOEA
tOEA
tOEA
OE
tCAC
tCLZ
tAA
tCAP
Lower I/O
tOFF
tOEZ
Data Out 2
tAA
tRAC
tCAC
tCLZ
tOFF
tOEZ
tAA
tCAP
tCAC
tCLZ
tOFF
tOEZ
Upper I/O
Data Out 1
4/11/01; V.1.1
Alliance Semiconductor
Data Out n
P. 16 of 25
AS4LC256K16EO
®
EDO page mode early write cycle waveform
tRASP
tRAH
tRWL
RAS
tCRP
tRCD
tPC
tCSH
tCAS
UCAS,
LCAS
tCAH
tASC
tCP
tWCS
tRSH
tRAL
tAR
tASR
Address
tRAD
Row address
Col address
Col Address
Col Address
tCWL
tWP
tWCH
tOEH
WE
OE
tHDR
tOED
tDH
tDS
I/O
Data In
Data In
Data In
EDO page mode byte early write cycle waveform
tRASP
tRP
RAS
tCSH
tCRP
tRCD
tRSH
tCAS
tCAS
tCRP
UCAS
tCP
tCP
tPC
tPC
tCAS
tCRP
tRPC
LCAS
tRAD
tRAH
tASR
Address
tCAH
tASC
tASC
tASC
Row
tRAL
tCAH
tCAH
Column 1
Column 2
Column n
tRWL
tWCH
tWCH
tWCH
tWCS
tWCS
tWP
tCWL
tWCS
tWP
tCWL
tWP
tCWL
WE
OE
tDS
Lower I/O
tDH
Data In 2
tDS
tDH
tDS
tDH
Upper I/O
Data In 1
4/11/01; V.1.1
Alliance Semiconductor
Data In n
P. 17 of 25
AS4LC256K16EO
®
EDO page mode read-modify-write cycle waveform
tRASP
tRP
RAS
tPCM
tCSH
tRCD
UCAS,
LCAS
tCAS
tCP
tCRP
tRAD
tRAH
tASR
tRAL
tCAH
Address
Row Ad
tCAH
Col Ad
tCAH
Col Ad
tRWD
Col Address
tCWL
tRCS
tRWL
tCWD
tCWD
tCWD
tAWD
tAWD
tCWL
tWP
WE
tOEA
tOEZ
tOED
tOEA
OE
tAA
tDH
tRAC
tDS
tCLZ
tCAC
tCLZ
tCAC
tCAC
Data In
Data Out
I/O
tCAP
tDS
tCLZ
Data In
Data Out
Data In
Data Out
CAS-before-RAS refresh cycle waveform
(WE = VIH)
tRC
tRP
tRAS
RAS
tRPC
tCHR
tCPN
tCSR
UCAS,
LCAS
tOFF
I/O
RAS only refresh cycle waveform
(WE = OE =VIH or VIL)
tRC
tRAS
tRP
RAS
tCRP
UCAS,
LCAS
Address
4/11/01; V.1.1
tARS
tRPC
tRAH
Row Address
Alliance Semiconductor
P. 18 of 25
AS4LC256K16EO
®
EDO page mode byte read-modify-write cycle
tRASP
tRP
RAS
tCSH
tRCD
tCRP
tRSH
tCAS
tCAS
tCRP
UCAS
tPCM
tCP
tCP
tCAS
LCAS
tRAD
tRAH
tASR
Address
tAWD
tASC
tASC
R
C1
tASC
Cn
C2
tRWL
tAWD
tCWD
tRCS
tRAL
tCAH
tAWD
tCAH
tCAH
tCWD
tCWD
tCWL
tRWD
tCWL
tWP
tCWL
tWP
tWP
WE
tOEA
tOEA
tOEA
OE
tDH
tOED
tOED
tDH
tDS
tDS
Upper Input
Data In 1
tRAC
tAA
Data In n
tCAP
tAA
tCAC
tOEZ
tCAC
tOEZ
tCLZ
tCLZ
Upper Output
tOED
Data Out 1
tDH
Data Out n
Lower Input
Data In 2
tDS
tOEZ
tAA
tCAC
tCLZ
Lower Output
Data Out 2
4/11/01; V.1.1
Alliance Semiconductor
P. 19 of 25
AS4LC256K16EO
®
Hidden refresh cycle (read) waveform
tRC
tRC
tRAS
tPR
tRAS
tPR
RAS
tCRP
tCHR
tRCD
tRSH
tCRP
CAS
tAR
tRAD
tRAH
tASC
tASR
Row
Address
Col Address
tRCS
tRRH
WE
tOEA
OE
tRAC
tAA
tCAC
tOFF
tCLZ
tOEZ
Data Out
I/O
Hidden refresh cycle (write) waveform
tRC
tRAS
tRP
RAS
tCRP
tRCD
tRSH
UCAS,
LCAS
tAR
tRAD
tRAH
tRAL
tASR
Address
tASC
Row Address
tCAH
Col Address
tRWL
tWCR
tWP
tWCS
tWCH
WE
tDS
tDH
tDHR
I/O
Data In
OE
4/11/01; V.1.1
Alliance Semiconductor
P. 20 of 25
AS4LC256K16EO
®
CAS-before-RAS refresh counter test cycle waveform
tRAS
tRSH
tRP
RAS
tCPT
tCSR
tCAS
tCHR
UCAS,
LCAS
tRAL
tCAH
Address
Col Address
tAA
tCAC
tCLZ
Read Cycle
I/O
tOFF
Data Out
tRRH
tRCH
tRCS
WE
tOEA
tROH
OE
tRWL
tCWL
tWP
tWCH
tWCS
Write Cycle
WE
tDH
tDS
I/O
Data In
OE
tRCS
tWP
tCWD
tAWD
tCWL
Read-Write Cycle
WE
tOEA
tOED
OE
t AA
tCLZ
tDH
tCAC
I/O
4/11/01; V.1.1
Data Out
Alliance Semiconductor
tOEZ
tDS
Data In
P. 21 of 25
AS4LC256K16EO
®
CAS-before-RAS self refresh cycle
tRP
tRASS
tRPS
RAS
tRPC
tRPC
tCP
tCHS
tCSR
UCAS,
LCAS
tCEZ
DQ
Typical DC and AC characteristics
1.5
1.2
1.1
1.0
0.9
0.8
2.7
70
3.0
3.3
3.6
Supply voltage (V)
Typical supply current ICC
vs. supply voltage VCC
1.3
80
1.1
1.0
0.9
70
50
40
30
20
10
4/11/01; V.1.1
3.9
50
50
125
Typical supply current ICC
vs. ambient temperature Ta
100
150
200
Load capacitance (pF)
250
Typical power-on current IPO
vs. cycle rate 1/tRC
35
30
50
40
30
20
0.0
–55
60
30
–10
35
80
Ambient temperature (°C)
10
3.0
3.3
3.6
Supply voltage (V)
70
40
60
Supply current (mA)
Supply current (mA)
90
0.8
–55
3.9
60
0.0
2.7
1.4
1.2
Typical access time tRAC
vs. load capacitance CL
100
Typical access time
1.3
Ta = 25°C
Normalized access time
Normalized access time
1.4
Normalized access time tRAC
vs. ambient temperature Ta
Power-on current (mA)
1.5
Normalized access time tRAC
vs. supply voltage VCC
25
20
15
10
5
0.0
–10
35
80
125
Ambient temperature (°C)
Alliance Semiconductor
2
4
6
8
Cycle rate (MHz)
10
P. 22 of 25
AS4LC256K16EO
®
35
Typical refresh current ICC3
vs. Ambient temperature Ta
Refresh current (mA)
25
20
15
10
5
3.0
3.3
3.6
Supply voltage (V)
25
20
15
10
70
3.0
60
Output sink current (mA)
3.5
2.5
2.0
1.5
1.0
0.5
0.0
0
20
40
60
Ambient temperature (°C)
Typical EDO page mode current ICC4
vs. ambient temperature Ta
EDO page mode current (mA)
35
30
25
20
15
10
5
0.0
0
20
40
60
Ambient temperature (°C)
4/11/01; V.1.1
80
2.0
1.5
1.0
0
20
40
60
80
Ambient temperature (°C)
2.7
Typical output sink current IOL
vs. output voltage VOL
50
40
30
20
10
0.0
0.0
80
2.5
0.5
0
0.0
3.9
Typical TTL stand-by current ICC2
vs. ambient temperature Ta
Stand-by current (mA)
3.0
5
0
2.7
EDO page mode current (mA)
30
70
Output source current (mA)
Refresh current (mA)
30
35
Typical TTL stand-by current ICC2
vs. supply voltage VCC
3.5
Stand-by current (mA)
Typical refresh current ICC3
vs. supply voltage VCC
3.0
3.3
3.6
Supply voltage (V)
3.9
Typical output source current IOH
vs. output voltage VOH
60
50
40
30
20
10
0.0
0.5
1.0
1.5
Output voltage (V)
2.0
0.0
1.0
2.0
3.0
Output voltage (V)
4.0
Typical EDO page mode current ICC4
vs. supply voltage VCC
35
30
25
20
15
10
5
0.0
2.7
3.0
3.3
3.6
Supply voltage (V)
Alliance Semiconductor
3.9
P. 23 of 25
AS4LC256K16EO
®
Package dimensions
44-pin TSOP II
c
32 31 30 29 28 27 26 25 24 23
44 43 42 41 40 39 38 37 36 35
Min
(mm)
1.2
A
E He
44-pin TSOP II
1
2
3
4
5
6
7
8
A1
0.05
A2
0.95
1.05
b
0.30
0.45
c
0.127 (typical)
13 14 15 16 17 18 19 20 21 22
9 10
D
l
A2
A
0–5°
A1
e
b
D
18.28
18.54
E
10.03
10.29
He
11.56
11.96
e
0.80 (typical)
l
0.40
40-pin SOJ
e
D
A
A1
A2
B
b
c
D
E
E1
E2
e
Pin 1
B
c
A2
A
A1
E
Seating
Plane
Capacitance
Parameter
Input capacitance
I/O capacitance
4/11/01; V.1.1
0.60
40-pin SOJ
400 mil
Min
Max
E1 E2
b
Max
(mm)
0.128
0.148
0.026
-
1.105
1.115
0.026
0.032
0.015
0.020
0.007
0.013
1.020
1.035
0.370 (typical)
0.395
0.405
0.435
0.445
0 050 (typical)
ƒ = 1 MHz, Ta = room temperature, VCC = 3.3V ± 0.3V)
Symbol
Signals
Test conditions
Max
Unit
CIN1
A0 to A8
Vin = 0V
5
pF
CIN2
RAS, UCAS, LCAS, WE, OE Vin = 0V
7
pF
CI/O
I/O0 to I/O15
7
pF
Alliance Semiconductor
Vin = Vout = 0V
P. 24 of 25
AS4LC256K16EO
®
Ordering codes
Package \ Access time
35 ns
45 ns
60 ns
Plastic SOJ, 400 mil, 40-pin
AS4LC256K16E0-35JC
AS4LC256K16E0-45JC
AS4LC256K16EO-60JC
TSOP II, 400 mil, 40/44-pin
AS4LC256K16EO-35TC
AS4LC256K16EO-45TC
AS4LC256K16EO-60TC
Part numbering system
AS4LC
3.3V DRAM prefix
4/11/01; V.1.1
256K16E0
Device number
–XX
X
C
RAS access time
Package: J = SOJ
T = TSOP II
Commercial temperature range,
0°C to 70 °C
Alliance Semiconductor
P. 25 of 25
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