1N4448W FAST SWITCHING SURFACE MOUNT DIODE Features · · · · Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance SOD-123 Mechanical Data · · · · · · · · · D H J G Case: SOD-123, Molded Plastic Plastic Material: UL Flammability Rating Classification 94V-0 Moisture Sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band Marking: Date Code and Type Code: See Page 3 Type Code: T5 Weight: 0.01 grams (approx.) Ordering Information See Page 3 a A B Dim Min Max A 3.55 3.85 B 2.55 2.85 C 1.40 1.70 D — 1.35 E 0.55 Typical G E C 0.25 — H 0.11 Typical J — 0.10 a 0° 8° All Dimensions in mm Maximum Ratings @ TA = 25°C unless otherwise specified Characteristic Symbol 1N4448W Unit VRM 100 V VRRM VRWM VR 75 V Non-Repetitive Peak Reverse Voltage Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VR(RMS) 53 V Forward Continuous Current IFM 500 mA Average Rectified Output Current IO 250 mA IFSM 4.0 2.0 A RMS Reverse Voltage Non-Repetitive Peak Forward Surge Current @ t = 1.0ms @ t = 1.0s Pd 400 mW RqJA 315 °C/W Tj , TSTG -65 to +150 °C Power Dissipation (Note 2) Thermal Resistance Junction to Ambient Air (Note 2) Operating and Storage Temperature Range Electrical Characteristics Characteristic @ TA = 25°C unless otherwise specified Symbol Min Max Unit V(BR)R 75 ¾ V IR = 10mA Forward Voltage (Note 1) VFM 0.62 ¾ ¾ ¾ 0.72 0.855 1.0 1.25 V IF = 5.0mA IF = 10mA IF = 100mA IF = 150mA Peak Reverse Current (Note 1) IRM ¾ 2.5 50 30 25 mA mA mA nA Total Capacitance CT ¾ 4.0 pF Reverse Recovery Time trr ¾ 4.0 ns Reverse Breakdown Voltage (Note 1) Notes: Test Condition VR = 75V VR = 75V, Tj = 150°C VR = 25V, Tj = 150°C VR = 20V VR = 0, f = 1.0MHz IF = IR = 10mA, Irr = 0.1 x IR, RL = 100W 1. Short duration pulse test used to minimize self-heating effect. 2. Part mounted on FR-4 PC board with minimum recommended pad layout, which can be found on ourwebsite at http://www/diodes.com/datasheets/ap02001.pdf. DS12002 Rev. 9 - 2 1 of 3 1N4448W 100 400 IF, FORWARD CURRENT (mA) Pd, POWER DISSIPATION (mW) 500 300 200 100 Ta = 50°C Ta = 85°C 0 50 25 75 100 125 Ta = -30°C 150 0 200 600 800 1000 2.5 trr, REVERSE RECOVERY TIME (nS) 10.0 IR, REVERSE CURRENT (µA) 400 VF, FORWARD VOLTAGE (mV) Fig. 2 Typical Forward Characteristics TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Derating Curve Ta = 100°C 1.0 Ta = 75°C 0.10 Ta = 50°C Ta = 25°C Ta = 0°C 0.01 Ta = -30°C 0.001 Ta = 0°C 1 0.1 0 Ta = 25°C 10 2.0 1.5 1.0 0.5 0 0 60 40 20 80 VR, REVERSE VOLTAGE (V) Fig. 3 Typical Reverse Characteristics 4 0 2 4 6 8 10 IF, FORWARD CURRENT (mA) Fig. 4 Reverse Recovery Time vs. Forward Current CT, TOTAL CAPACITANCE (pF) f = 1MHz 3 2 1 0 0 1 2 3 4 5 6 VR, REVERSE VOLTAGE (V) Fig. 5 Total Capacitance vs. Reverse Voltage DS12002 Rev. 9 - 2 2 of 3 1N4448W Ordering Information (Note 1) Notes: Device Packaging Shipping 1N4448W-7 SOD-123 3000/Tape & Reel 1. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information YM T5 T5 = Product Type Marking Code (See Sheet 1) YM = Date Code Marking Y = Year (ex: N = 2002) M = Month (ex: 9 = September) Date Code Key Year 1998 1999 2000 2001 2002 2003 2004 2005 Code J K L M N P R S Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS12002 Rev. 9 - 2 3 of 3 1N4448W