Preliminary Datasheet BCR12LM-14LJ 700V - 12A - Triac R07DS0909EJ0100 Rev.1.00 Nov 14, 2012 Medium Power Use Features IT (RMS): 12 A VDRM: 800 V (Tj = 125°C) Tj: 150°C IFGTI, IRGTI, IRGT III:30 mA Viso: 1800 V Insulated Type Planar Passivation Type UL Recognized: File No. E223904 Outline RENESAS Package code: PRSS0003AF-A) (Package name: TO-220FL) 2 3 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 1 1 2 3 Applications Washing machine, inversion operation of capacitor motor, and other general controlling devices. Maximum Ratings Repetitive peak off-state voltageNote1 VDRM Non-repetitive peak off-state voltageNote1 VDSM Voltage class 14 800 700 840 Symbol Ratings Unit RMS on-state current IT (RMS) 12 A Commercial frequency, sine full wave 360 conduction, Tc = 93C Surge on-state current ITSM 120 A 60Hz sinewave 1 full cycle, peak value, non-repetitive I2 t 60 A2s PGM PG (AV) VGM IGM Tj Tstg — Viso 5 0.5 10 2 –40 to +150 –40 to +150 1.5 1800 W W V A C C g V Parameter Parameter I2t for fusion Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction Temperature Storage temperature Mass Isolation voltage Note5 R07DS0909EJ0100 Rev.1.00 Nov 14, 2012 Symbol Conditions Unit V Tj = 125C Tj = 150C V Conditions Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Ta = 25C, AC 1 minute T1 T2 G terminal to case Page 1 of 7 BCR12LM-14LJ Preliminary Electrical Characteristics Symbo l Parameter Repetitive peak off-state current On-state voltage IDRM VTM Min. — — Rated value Typ. Max. — 2.0 — 1.6 Unit Test conditions mA V Tj = 150C, VDRM applied Tc = 25C, ITM = 20A, instantaneous measurement Gate trigger voltageNote2 VFGT VRGT VRGT — — — — — — 1.5 1.5 1.5 V V V Tj = 25C, VD = 6 V, RL = 6 , RG = 330 Gate trigger curentNote2 IFGT IRGT IRGT — — — — — — 30 30 30 mA mA mA Tj = 25C, VD = 6 V, RL = 6 , RG = 330 VGD 0.2 0.1 — 10 — — — — — — 4.0 — V V C/W V/s Tj = 125C, VD = 1/2 VDRM Tj = 150C, VD = 1/2 VDRM Junction to caseNote3 Tj = 125C 1 — — V/s Tj = 150C Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state Note4 commutation voltage Notes: 1. 2. 3. 4. 5. Rth (j-c) (dv/dt)c Gate open. Measurement using the gate trigger characteristics measurement circuit. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below. Make sure that your finished product containing this device meets your safe isolation requirements. For safety, it's advisable that heatsink is electrically floating. Test conditions 1. Junction temperature Tj = 125/150C 2. Rate of decay of on-state commutating current (di/dt)c = –6.0A/ms 3. Peak off-state voltage VD = 400 V R07DS0909EJ0100 Rev.1.00 Nov 14, 2012 Commutating voltage and current waveforms (inductive load) Supply Voltage Time Main Current (di/dt)c Time Main Voltage (dv/dt)c Time VD Page 2 of 7 BCR12LM-14LJ Preliminary Performance Curves Maximum On-State Characteristics Rated Surge On-State Current Surge On-State Current (A) 200 Tj = 150°C 101 Tj = 25°C 100 0 1 2 3 40 101 102 Gate Characteristics (I, II and III) Gate Trigger Current vs. Junction Temperature PGM = 5W 101 PG(AV) = 0.5W IGM = 2A VGT = 1.5V 100 IRGT I VGD = 0.1V IFGT I, IRGT III 102 103 104 103 Typical Example IRGT I, IRGT III 102 IFGT I 101 –40 0 40 80 120 160 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) 103 Typical Example 102 101 –40 Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) Gate Voltage (V) 80 Conduction Time (Cycles at 60Hz) 101 Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) 120 On-State Voltage (V) VGM = 10V 10−1 160 0 100 4 0 40 80 120 Junction Temperature (°C) R07DS0909EJ0100 Rev.1.00 Nov 14, 2012 160 Transient Thermal Impedance (°C/W) On-State Current (A) 102 102 5 103 104 100 101 4 3 2 1 0 −1 10 102 Conduction Time (Cycles at 60Hz) Page 3 of 7 BCR12LM-14LJ Preliminary 101 100 10−1 101 Case Temperature (°C) 102 103 104 12 360° Conduction Resistive, 10 inductive loads 8 6 4 2 0 2 4 6 8 10 12 14 16 Conduction Time (Cycles at 60Hz) RMS On-State Current (A) Allowable Case Temperature vs. RMS On-State Current Allowable Ambient Temperature vs. RMS On-State Current Curves apply regardless of conduction angle 140 14 0 105 120 100 80 60 40 360° Conduction 20 Resistive, inductive loads 0 0 2 4 6 8 10 12 14 160 Ambient Temperature (°C) 10 2 On-State Power Dissipation (W) 16 No Fins 160 16 All fins are black painted aluminum and greased Curves apply regardless of conduction angle Resistive, inductive loads Natural convection 140 120 100 80 60 40 120 120 t2.3 100 100 t2.3 20 60 × 60 × t2.3 0 0 2 4 6 8 10 12 14 16 RMS On-State Current (A) RMS On-State Current (A) Allowable Ambient Temperature vs. RMS On-State Current Repetitive Peak Off-State Current vs. Junction Temperature 160 Ambient Temperature (°C) Maximum On-State Power Dissipation 103 140 120 Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads 100 80 60 40 20 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 RMS On-State Current (A) R07DS0909EJ0100 Rev.1.00 Nov 14, 2012 Repetitive Peak Off-State Current (Tj = t°C) × 100 (%) Repetitive Peak Off-State Current (Tj = 25°C) Transient Thermal Impedance (°C/W) Maximum Transient Thermal Impedance Characteristics (Junction to ambient) 105 Typical Example 104 103 102 –40 0 40 80 120 160 Junction Temperature (°C) Page 4 of 7 BCR12LM-14LJ Preliminary Latching Current vs. Junction Temperature 103 103 Latching Current (mA) Typical Example 102 0 40 80 120 T2+, G– Typical Example 102 101 T2+, G+ Typical Example T2–, G– 0 40 80 120 160 Junction Temperature (°C) Junction Temperature (°C) Breakover Voltage vs. Junction Temperature Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=125°C) 160 140 120 100 80 60 40 20 Typical Example 0 –40 Distribution 100 –40 160 0 40 80 120 160 Breakover Voltage (dv/dt = xV/μs) × 100 (%) Breakover Voltage (dv/dt = 1V/μs) 101 –40 160 140 120 III Quadrant 100 80 I Quadrant 60 40 Typical Example Tj = 125°C 20 0 1 10 102 103 104 Junction Temperature (°C) Rate of Rise of Off-State Voltage (V/μs) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=150°C) Commutation Characteristics (Tj=125°C) 102 160 Critical Rate of Rise of Off-State Commutating Voltage (V/μs) Breakover Voltage (dv/dt = xV/μs) × 100 (%) Breakover Voltage (dv/dt = 1V/μs) Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) Holding Current (Tj = t°C) × 100 (%) Holding Current (Tj = 25°C) Holding Current vs. Junction Temperature 140 120 III Quadrant 100 80 60 I Quadrant 40 20 Typical Example Tj = 150°C 0 1 10 102 103 104 Rate of Rise of Off-State Voltage (V/μs) R07DS0909EJ0100 Rev.1.00 Nov 14, 2012 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time III Quadrant Minimum Value 101 Typical Example Tj = 125°C IT = 4A τ = 500μs VD = 200V f = 3Hz 100 100 I Quadrant 101 102 Rate of Decay of On-State Commutating Current (A/ms) Page 5 of 7 BCR12LM-14LJ Preliminary Gate Trigger Current vs. Gate Current Pulse Width Critical Rate of Rise of Off-State Commutating Voltage (V/μs) 102 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time 101 Typical Example Tj = 150°C IT = 4A τ = 500μs VD = 200V f = 3Hz III Quadrant Minimum Value I Quadrant 100 100 101 102 Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) Commutation Characteristics (Tj=150°C) 103 Typical Example IRGT III IRGT I 102 IFGT I 101 100 101 102 Rate of Decay of On-State Commutating Current (A/ms) Gate Current Pulse Width (μs) Gate Trigger Characteristics Test Circuits Recommended Circuit Values Around The Triac 6Ω 6Ω Load C1 A 6V V Test Procedure I R1 A 6V 330Ω V 330Ω Test Procedure II C0 R0 C1 = 0.1 to 0.47μF C0 = 0.1μF R1 = 47 to 100Ω R0 = 100Ω 6Ω A 6V V 330Ω Test Procedure III R07DS0909EJ0100 Rev.1.00 Nov 14, 2012 Page 6 of 7 BCR12LM-14LJ Preliminary Package Dimensions Package Name TO-220FL JEITA Package Code ⎯ Previous Code TO-220FL RENESAS Code PRSS0003AF-A Unit: mm 6.5 ± 0.3 3.0 ± 0.3 2.8 ± 0.2 3.2 ± 0.2 3.6 ± 0.3 12.5 ± 0.5 15.0 ± 0.3 10.0 ± 0.3 MASS[Typ.] 1.5g 1.15 ± 0.2 1.15 ± 0.2 0.75 ± 0.15 0.40 ± 0.15 4.5 ± 0.2 2.54 ± 0.25 2.6 ± 0.2 2.54 ± 0.25 Ordering Information Orderable Part Number BCR12LM-14LJ#B00 BCR12LM-14LJA8#B00 Note: Packing Tube Tube Quantity 50 pcs. 50 pcs. Remark Straight type A8 Lead form Please confirm the specification about the shipping in detail. R07DS0909EJ0100 Rev.1.00 Nov 14, 2012 Page 7 of 7 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics 3. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. 4. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. Renesas Electronics assumes no responsibility for any losses incurred by you or 5. Renesas Electronics products are classified according to the following two quality grades: "Standard" and "High Quality". The recommended applications for each Renesas Electronics product depends on third parties arising from such alteration, modification, copy or otherwise misappropriation of Renesas Electronics product. the product's quality grade, as indicated below. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots etc. "High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; and safety equipment etc. Renesas Electronics products are neither intended nor authorized for use in products or systems that may pose a direct threat to human life or bodily injury (artificial life support devices or systems, surgical implantations etc.), or may cause serious property damages (nuclear reactor control systems, military equipment etc.). You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas Electronics product for any application for which it is not intended. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for which the product is not intended by Renesas Electronics. 6. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges. 7. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or systems manufactured by you. 8. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 9. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. You should not use Renesas Electronics products or technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. When exporting the Renesas Electronics products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. 10. It is the responsibility of the buyer or distributor of Renesas Electronics products, who distributes, disposes of, or otherwise places the product with a third party, to notify such third party in advance of the contents and conditions set forth in this document, Renesas Electronics assumes no responsibility for any losses incurred by you or third parties as a result of unauthorized use of Renesas Electronics products. 11. This document may not be reproduced or duplicated in any form, in whole or in part, without prior written consent of Renesas Electronics. 12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries. (Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics. http://www.renesas.com SALES OFFICES Refer to "http://www.renesas.com/" for the latest and detailed information. Renesas Electronics America Inc. 2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A. Tel: +1-408-588-6000, Fax: +1-408-588-6130 Renesas Electronics Canada Limited 1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada Tel: +1-905-898-5441, Fax: +1-905-898-3220 Renesas Electronics Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K Tel: +44-1628-651-700, Fax: +44-1628-651-804 Renesas Electronics Europe GmbH Arcadiastrasse 10, 40472 Düsseldorf, Germany Tel: +49-211-65030, Fax: +49-211-6503-1327 Renesas Electronics (China) Co., Ltd. 7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China Tel: +86-10-8235-1155, Fax: +86-10-8235-7679 Renesas Electronics (Shanghai) Co., Ltd. Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898 Renesas Electronics Hong Kong Limited Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong Tel: +852-2886-9318, Fax: +852 2886-9022/9044 Renesas Electronics Taiwan Co., Ltd. 13F, No. 363, Fu Shing North Road, Taipei, Taiwan Tel: +886-2-8175-9600, Fax: +886 2-8175-9670 Renesas Electronics Singapore Pte. Ltd. 80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre Singapore 339949 Tel: +65-6213-0200, Fax: +65-6213-0300 Renesas Electronics Malaysia Sdn.Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: +60-3-7955-9390, Fax: +60-3-7955-9510 Renesas Electronics Korea Co., Ltd. 11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea Tel: +82-2-558-3737, Fax: +82-2-558-5141 © 2012 Renesas Electronics Corporation. All rights reserved. Colophon 2.2