AOD516/AOI516/AOY516 30V N-Channel AlphaMOS General Description Product Summary VDS • Latest Trench Power MOSFET technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application 30V 50A RDS(ON) (at VGS=10V) < 5mΩ RDS(ON) (at VGS = 4.5V) < 9mΩ 100% UIS Tested 100% Rg Tested • DC/DC Converters in Computing • Isolated DC/DC Converters in Telecom and Industrial TO-251A IPAK TO251B (IPAK short lead) TO252 DPAK TopView ID (at VGS=10V) Top View Bottom View D D D S D G G S S G G Gate-Source Voltage S VGS TC=25°C Pulsed Drain Current C Avalanche Current C Units V ±20 V A 170 18 IDSM TA=70°C Maximum 30 39 IDM TA=25°C Continuous Drain Current S D 50 ID TC=100°C G D Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Continuous Drain Current G D Bottom View A 14 IAS 29 A Avalanche energy L=0.1mH C EAS 42 mJ VDS Spike VSPIKE 36 V 100ns TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C PD TA=25°C Rev 3: Nov 2012 2.5 Steady-State Steady-State RθJA RθJC W 1.6 TJ, TSTG Symbol t ≤ 10s W 25 PDSM Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 50 -55 to 175 Typ 16 41 2.5 www.aosmd.com °C Max 20 50 3 Units °C/W °C/W °C/W Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Typ 30 1 TJ=55°C Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS，ID=250µA 5 1.6 VGS=10V, ID=20A 100 nA 2.4 V 4 5 5.4 6.8 9 Static Drain-Source On-Resistance VGS=4.5V, ID=20A 7.1 gFS Forward Transconductance VDS=5V, ID=20A 83 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz µA 2 RDS(ON) TJ=125°C Units V VDS=30V, VGS=0V IGSS Max mΩ mΩ S 1 V 46 A 1333 pF 512 pF 42 pF 1.7 2.6 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 18.3 33 nC Qg(4.5V) Total Gate Charge 8.5 17 nC Qgs Gate Source Charge Qgd VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=20A 0.8 4.8 nC Gate Drain Charge 2.5 nC tD(on) Turn-On DelayTime 7.5 ns tr Turn-On Rise Time 4.8 ns tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 23.3 ns 4.5 ns IF=20A, dI/dt=500A/µs 14.1 Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 16.2 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=175°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 3: Nov 2012 www.aosmd.com Page 2 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 10V 4.5V 6V 80 VDS=5V 80 8V 4V 60 ID(A) ID (A) 60 3.5V 40 40 20 20 125°C 25°C VGS=3V 0 0 0 1 2 3 4 0 5 10 2 3 4 5 6 Normalized On-Resistance 1.6 8 RDS(ON) (mΩ Ω) 1 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=4.5V 6 4 VGS=10V 2 0 VGS=10V ID=20A 1.4 1.2 1 VGS=4.5V ID=20A 0.8 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 25 50 75 100 125 150 175 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 12 1.0E+02 ID=20A 1.0E+01 40 9 125°C IS (A) RDS(ON) (mΩ Ω) 1.0E+00 6 1.0E-02 3 125°C 1.0E-01 25°C 1.0E-03 25°C 1.0E-04 0 1.0E-05 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 3: Nov 2012 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1800 Ciss 1400 Capacitance (pF) VGS (Volts) 1600 VDS=15V ID=20A 8 6 4 1200 1000 800 Coss 600 400 2 Crss 200 0 0 0 5 10 15 Qg (nC) Figure 7: Gate-Charge Characteristics 0 20 30 300 1000.0 250 10µs 100.0 1ms DC 10ms 1.0 TJ(Max)=150°C TC=25°C Power (W) 100µs 10.0 0.1 TJ(Max)=150°C TC=25°C 10µs RDS(ON) ID (Amps) 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 200 150 100 50 0.0 0 0.01 0.1 1 VDS (Volts) 10 100 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to-Case (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton on/T TJ,PK J,PK=TC C+PDM DM.ZθJC θJC.RθJC θJC 1 descendingorder order InIndescending D=0.5,0.3, 0.3,0.1, 0.1,0.05, 0.05,0.02, 0.02,0.01, 0.01,single singlepulse pulse D=0.5, =5°C/W RθJC θJC=3°C/W 0.1 Single Pulse Single Pulse 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 3: Nov 2012 www.aosmd.com Page 4 of 6 60 60 50 50 Current rating ID(A) Power Dissipation (W) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 30 20 10 40 30 20 10 0 0 0 25 50 75 100 125 TCASE (° °C) Figure 12: Power De-rating (Note F) 150 0 25 50 75 100 125 150 TCASE (° °C) Figure 13: Current De-rating (Note F) 175 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-toAmbient (Note H) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=50°C/W 0.1 Single Pulse 0.01 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev 3: Nov 2012 www.aosmd.com Page 5 of 6 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs td(on) tr td(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev 3: Nov 2012 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6