ON NTD20P06L Power mosfet Datasheet

NTD20P06L, NTDV20P06L
Power MOSFET
−60 V, −15.5 A, Single P−Channel, DPAK
Features
•
•
•
•
Withstands High Energy in Avalanche and Commutation Modes
Low Gate Charge for Fast Switching
AEC Q101 Qualified − NTDV20P06L
These Devices are Pb−Free and are RoHS Compliant
Applications
• Bridge Circuits
• Power Supplies, Power Motor Controls
• DC−DC Conversion
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V(BR)DSS
RDS(on) TYP
ID MAX
(Note 1)
−60 V
130 mW @ −5.0 V
−15.5 A
P−Channel
D
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Drain−to−Source Voltage
Continuous
Value
Unit
VDSS
−60
V
VGS
$20
V
Non−Repetitive
tp v10 ms
VGSM
$30
Continuous
Drain Current
(Note 1)
Steady State
TA = 25°C
ID
−15.5
Power Dissipation (Note 1)
Steady State
G
S
MARKING DIAGRAMS
A
4
TA = 25°C
PD
65
IDM
$50
A
Operating Junction and Storage Temperature
TJ,
TSTG
−55 to
175
°C
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 25 V, VGS = 5 V, IPK = 15 A,
L = 2.7 mH, RG = 25 W)
EAS
304
mJ
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL
tp = 10 ms
Pulsed Drain
Current
W
1 2
3
4
°C
260
THERMAL RESISTANCE RATINGS
Parameter
DPAK
CASE 369C
STYLE 2
1
Symbol
Max
Unit
Junction−to−Case (Drain)
RqJC
2.3
°C/W
Junction−to−Ambient – Steady State (Note 1)
RqJA
80
Junction−to−Ambient – Steady State (Note 2)
RqJA
110
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 in sq. pad size
(Cu area = 1.127 in sq. [1 oz] including traces)
2. Surface−mounted on FR4 board using the minimum recommended pad size
(Cu area = 0.412 in sq.)
4
Drain
2
1
3
Drain
Gate
Source
4
Drain
AYWW
T20
P06LG
Gate−to−Source
Voltage
Symbol
AYWW
T20
P06LG
Parameter
2
3
IPAK/DPAK
CASE 369D
STYLE 2
20P06L
A
Y
WW
G
1 2 3
Gate Drain Source
Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2011
October, 2016 − Rev. 7
1
Publication Order Number:
NTD20P06L/D
NTD20P06L, NTDV20P06L
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = −250 mA
−60
−74
V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
−64
mV/°C
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V,
VDS = −60 V
TJ = 25°C
−1.0
TJ = 150°C
−10
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = −250 mA
Gate−to−Source Leakage Current
±100
mA
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Gate Threshold Temperature Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
RDS(on)
Forward Transconductance
gFS
Drain−to−Source On−Voltage
VDS(on)
−1.0
−1.5
−2.0
3.1
VGS = −5.0 V, ID = −7.5 A
0.130
VGS = −5.0 V, ID = −15 A
0.143
VDS = −10 V, ID = −7.5 A
11
VGS = −5.0 V,
ID = −7.5 A
V
mV/°C
0.150
W
S
TJ = 25°C
−1.2
TJ = 150°C
−1.9
V
CHARGES AND CAPACITANCES
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Total Gate Charge
VGS = 0 V, f = 1 MHz, VDS = −25 V
QG(TOT)
VGS = −5.0 V, VDS = −48 V,
ID = −18 A
pF
740
1190
207
300
66
120
15
26
nC
ns
Gate−to−Source Charge
QGS
4.0
Gate−to−Drain Charge
QGD
7.0
td(ON)
11
20
90
180
28
50
70
135
TJ = 25°C
1.5
2.5
TJ = 150°C
1.3
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(OFF)
VGS = −5.0 V, VDD = −30 V,
ID = −15 A, RG = 9.1 W
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V, IS = −15 A
60
VGS = 0 V, dIS/dt = 100 A/ms,
IS = −12 A
QRR
V
ns
39
21
0.13
nC
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%
4. Switching characteristics are independent of operating junction temperatures
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NTD20P06L, NTDV20P06L
TYPICAL PERFORMANCE CURVES
(TJ = 25°C unless otherwise noted)
40
VGS = −6 V
VGS = −10 V
30
VGS = −5 V
VGS = −8 V
25
VGS = −7 V
VGS = −4.5 V
20
VGS = −4 V
15
VGS = −3.5 V
10
VGS = −3 V
5
TJ = 25°C
0
1
2
3
4
5
6
7
8
9
20
10
VDS w 10 V
0
1
2
3
4
5
6
7
−VDS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
VGS = −5 V
0.35
0.3
TJ = 125°C
0.25
0.2
0.15
TJ = 25°C
0.1
TJ = −55°C
0.05
0
0
5
10
15
20
25
8
9
21
24
0.25
TJ = 25°C
0.225
0.2
0.175
0.15
VGS = −5 V
0.125
VGS = −10 V
0.1
0.075
0.05
0.025
0
0
30
3
6
9
12
15
18
−ID, DRAIN CURRENT (A)
−ID, DRAIN CURRENT (A)
Figure 3. On−Resistance versus Drain Current
and Temperature
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
10000
2
1.6
TJ = 125°C
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0.4
1.8
TJ = 25°C
10
0.5
0.45
30
0
VGS = 0 V
ID = −7.5 A
VGS = −5 V
−ID, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(W)
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
TJ = −55°C
VGS = −5.5 V
VGS = −9 V
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
−ID, DRAIN CURRENT (A)
35
−ID, DRAIN CURRENT (A)
40
1.4
1.2
1
0.8
0.6
0.4
TJ = 150°C
1000
TJ = 125°C
100
10
0.2
0
−50
1
−25
0
25
50
75
100
125
150
5
10
15
20
25
30
35
40
45
50
55
TJ, JUNCTION TEMPERATURE (°C)
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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3
60
NTD20P06L, NTDV20P06L
C, CAPACITANCE (pF)
2400
2200
2000
VDS = 0 V
1800
1600
1400
Ciss
1200
Crss
TJ = 25°C
VGS = 0 V
1000
800
Ciss
600
Coss
400
200
0
Crss
−10
−5
0
−VGS
5
10
15
20
25
−VDS
GATE−TO−SOURCE OR DRAIN−TO−SOURCE
VOLTAGE (V)
Figure 7. Capacitance Variation
60
ID = −15 A
TJ = 25°C
50
6.25
5.0
40
QG
VDS
3.75
Qgs
VGS
QGD
30
2.5
20
1.25
10
0
0
0
4
8
12
VDS, DRAIN−TO−SOURCE VOLTAGE
(V)
−VGS, GATE−TO−SOURCE VOLTAGE
(V)
7.5
16
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and Drain−to−Source Voltage versus Total Charge
1000
20
−IS, SOURCE CURRENT (A)
t, TIME (nS)
VDD = −30 V
ID = −15 A
VGS = −5 V
tR
100
tF
td(off)
10
td(on)
VGS = 0 V
TJ = 25°C
15
10
5
0
1
1
10
Rg, GATE RESISTANCE (W)
100
0
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
0.25
0.5
0.75
1
1.25
1.5
−VSD, SOURCE−TO−DRAIN VOLTAGE (V)
1.75
Figure 10. Diode Forward Voltage versus
Current
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4
−ID, DRAIN CURRENT (A)
1000
VGS = −15 V
Single Pulse
TC = 25°C
100
100
10
1
10 ms
1
dc
RDS(on) Limit
Thermal Limit
Package Limit
0.1
0.1
1
10
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
100
EAS, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
NTD20P06L, NTDV20P06L
350
ID = −15 A
300
250
200
150
100
50
0
25
Rqjc(°C/W), EFFECTIVE TRANSIENT THERMAL RESPONSE
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
50
75
100
125
TJ, STARTING JUNCTION TEMPERATURE (°C)
150
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
10
D = 0.5
1
0.2
0.1
0.05
0.1
0.02
0.01
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
t, TIME (s)
Figure 13. Thermal Response
ORDERING INFORMATION
Device
Shipping†
Package
NTD20P06LG
NTD20P06LT4G
NTDV20P06LT4G
75 Units / Rail
2500 / Tape & Reel
DPAK
(Pb−Free)
2500 / Tape & Reel
NTDV20P06LT4G−VF01
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NTD20P06L, NTDV20P06L
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C−01
ISSUE F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
7. OPTIONAL MOLD FEATURE.
A
E
C
A
b3
B
c2
4
L3
Z
D
1
2
H
DETAIL A
3
L4
NOTE 7
b2
e
c
SIDE VIEW
b
TOP VIEW
0.005 (0.13)
M
C
Z
H
L2
GAUGE
PLANE
C
L
L1
DETAIL A
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
BOTTOM VIEW
Z
SEATING
PLANE
BOTTOM VIEW
A1
ALTERNATE
CONSTRUCTIONS
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.028 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.114 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
ROTATED 905 CW
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.102
5.80
0.228
3.00
0.118
1.60
0.063
6.17
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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6
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.72
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.90 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
NTD20P06L, NTDV20P06L
PACKAGE DIMENSIONS
IPAK
CASE 369D−01
ISSUE C
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
E
R
4
Z
A
S
1
2
3
−T−
SEATING
PLANE
K
J
F
H
D
G
3 PL
0.13 (0.005)
M
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
T
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NTD20P06L/D