AF4415P P-Channel 20-V (D-S) MOSFET Features General Description -Low rDS(on) Provides Higher Efficiency and Extends Battery Life -Miniature SO-8 Surface Mount Package Saves Board Space -High power and current handling capability These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWM DC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. Product Summary VDS (V) rDS(on) (mΩ) ID (A) -20 8.4@VGS=-4.5V 10.4@VGS=-2.5V -13.5 -12 Pin Descriptions Pin Assignments S 1 8 D S 2 7 D S 3 6 D G 4 5 D Pin Name Description S G D Source Gate Drain SOP-8 Ordering information Feature F :MOSFET A X 4415P X X X PN Package Lead Free Packing S: SOP-8 Blank : Normal L : Lead Free Package Blank : Tube or Bulk A : Tape & Reel This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent accompany the sale of the product. Rev. 1.0 Jul 16, 2004 1/3 AF4415P P-Channel 20-V (D-S) MOSFET Absolute Maximum Ratings (TA=25ºC unless otherwise noted) Symbol VDS VGS Parameter TA=25ºC TA=70ºC ID Continuous Drain Current (Note 1) IDM IS Pulsed Drain Current (Note 2) Continuous Source Current (Diode Conduction) (Note 1) TA=25ºC Power Dissipation (Note 1) TA=70ºC Operating Junction and Storage Temperature Range PD TJ, TSTG Rating -20 ±12 -13.5 -11.6 ±50 -2.1 3.1 2.3 -55 to 150 Drain-Source Voltage Gate-Source Voltage Units V V A A A W ºC Thermal Resistance Ratings Symbol RθJC RθJA Parameter Maximum Junction-to-Case (Note 1) Maximum Junction-to-Ambient (Note 1) Maximum 25 50 t < 5 sec t < 5 sec Units ºC/W ºC/W Note 1: surface Mounted on 1”x 1” FR4 Board. Note 2: Pulse width limited by maximum junction temperature Specifications (TA=25ºC unless otherwise noted) Symbol Static V(BR)DSS VGS(th) IGSS Min. Limits Typ. Max. -20 -1 - - -1.5 ±100 -1 - - -5 -50 - 6.7 8.0 8.4 10.4 - 7.2 8.7 - 70 -0.6 -1.2 S V VDS=-10V, VGS=-4.5V, ID=-13.5A - 86 20 11 118 - nC VDD=-10, RL=6Ω, ID=-1A, VGEN=-4.5V - 20 23 289 134 35 36 456 218 nS Parameter Drain-Source breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage IDSS Zero Gate Voltage Drain Current ID(on) On-State Drain Current (Note 3) rDS(on) Drain-Source On-Resistance (Note 3) gfs Forward Tranconductance (Note 3) VSD Diode Forward Voltage Dynamic (Note 4) Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Switching td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall-Time Test Conditions VGS=0V, ID=-250uA VDS= VGS, ID=-250uA VDS=0V, VGS=±12V VDS=-16V, VGS=0V VDS=-16V, VGS=0V, TJ=55ºC VDS=-4.5V, VGS=-10V VGS=-4.5V, ID=-13.5A VGS=-2.5V, ID=-12A VGS=-4.5V, ID=-13.5A, TJ=55ºC VGS=-15V, ID=-11.5A IS=2.5A, VGS=0V Unit V V nA uA A mΩ Note 3: Pulse test: PW < 300us duty cycle < 2%. Note 4: Guaranteed by design, not subject to production testing. Anachip Corp. www.anachip.com.tw Rev. 1.0 Jul 16, 2004 2/3 AF4415P P-Channel 20-V (D-S) MOSFET Marking Information SOP-8L ( Top View ) 8 Lot code: "X": Non-Lead Free; "X": Lead Free "A~Z": 01~26; "A~Z": 27~52 Logo 4415P AA Y W X Part Number Week code: "A~Z": 01~26; "A~Z": 27~52 1 Year code: "4" =2004 ~ Factory code Package Information H E Package Type: SOP-8L L VIEW "A" D 0.015x45 C B A1 e 7 (4X) A A2 7 (4X) VIEW "A" y Symbol A A1 A2 B C D E e H L y θ Dimensions In Millimeters Min. Nom. Max. 1.40 1.60 1.75 0.10 0.25 1.30 1.45 1.50 0.33 0.41 0.51 0.19 0.20 0.25 4.80 5.05 5.30 3.70 3.90 4.10 1.27 5.79 5.99 6.20 0.38 0.71 1.27 0.10 0O 8O Anachip Corp. www.anachip.com.tw Dimensions In Inches Min. Nom. Max. 0.055 0.063 0.069 0.040 0.100 0.051 0.057 0.059 0.013 0.016 0.020 0.0075 0.008 0.010 0.189 0.199 0.209 0.146 0.154 0.161 0.050 0.228 0.236 0.244 0.015 0.028 0.050 0.004 0O 8O Rev. 1.0 Jul 16, 2004 3/3