IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Advanced Process Technology 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 110 Qgs (nC) 29 Qgd (nC) 36 Configuration COMPLIANT • Fast Switching • Fully Avalanche Rated • Drop in Replacement of the IRFZ48/SiHFZ48 for Linear/Audio Applications • Lead (Pb)-free Available D D2PAK (TO-263) G RoHS* • 175 °C Operating Temperature Single I2PAK (TO-262) Available • Dynamic dV/dt 0.018 DESCRIPTION Advanced Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2PAK is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2 W in a typical surface mount application. G D S S N-Channel MOSFET ORDERING INFORMATION D2PAK (TO-263) IRFZ48RSPbF SiHFZ48RS-E3 IRFZ48RS SiHFZ48RS Package Lead (Pb)-free SnPb I2PAK (TO-262) IRFZ48RLPbF SiHFZ48RL-E3 - ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ± 20 Continuous Drain Currente Pulsed Drain VGS at 10 V TC = 25 °C ID TC = 100 °C Currenta, e IDM Linear Derating Factor Single Pulse Avalanche Peak Diode Recovery A 290 EAS 100 mJ PD 190 W dV/dt 4.5 V/ns TJ, Tstg - 55 to + 175 TC = 25 °C Operating Junction and Storage Temperature Range 50 50 W/°C dV/dtc, e Soldering Recommendations (Peak Temperature)d V 1.3 Energyb, e Maximum Power Dissipation UNIT for 10 s 300d °C * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91296 S-Pending-Rev. A, 22-Jul-08 WORK-IN-PROGRESS www.vishay.com 1 IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL Vishay Siliconix ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL Mounting Torque LIMIT UNIT 10 lbf · in 1.1 N·m 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, Starting TJ = 25 °C, L = 22 µH, RG = 25 Ω, IAS = 72 A (see fig. 12). c. ISD ≤ 72 A, dI/dt ≤ 200 A/µs, VDD ≤ VDS, TJ ≤ 175 °C. d. 1.6 mm from case. e. Current limited by the package, (Die Current = 72 A). THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 62 Case-to-Sink, Flat, Greased Surface RthCS 0.50 - Maximum Junction-to-Case (Drain) RthJC - 0.8 UNIT °C/W SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance VDS VGS = 0 V, ID = 250 µA 60 - - V ΔVDS/TJ Reference to 25 °C, ID = 1 mAc - 0.60 - V/°C VGS(th) VDS = VGS, ID = 250 µA 2.0 - 4.0 V nA IGSS IDSS RDS(on) gfs VGS = ± 20 V - - ± 100 VDS = 60 V, VGS = 0 V - - 25 VDS = 48 V, VGS = 0 V, TJ = 150 °C - - 250 - - 0.018 Ω 27 - - S ID = 43 Ab VGS = 10 V VDS = 25 V, ID = 43 Ab µA Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5c VGS = 10 V ID = 72 A, VDS = 48 V, see fig. 6 and 13b, c - 2400 - - 1300 - - 190 - - - 110 - - 29 Gate-Drain Charge Qgd - - 36 Turn-On Delay Time td(on) - 8.1 - - 250 - - 210 - - 250 - - 4.5 - - 7.5 - Rise Time Turn-Off Delay Time Fall Time tr td(off) tf Internal Drain Inductance LD Internal Source Inductance LS www.vishay.com 2 VDD = 30 V, ID = 72 A, RG = 9.1 Ω, RD = 0.34 Ω, see fig. 10b, c Between lead, 6 mm (0.25") from package and center of die contact D pF nC ns nH G S Document Number: 91296 S-Pending-Rev. A, 22-Jul-08 IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. - - 50c - - 290 - - 2.0 UNIT Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = 72 A, VGS = 0 Vb TJ = 25 °C, IF = 72 A, dI/dt = 100 A/µsb, c V - 120 180 ns - 0.50 0.80 µC Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. c. Current limited by the package, (Die Current = 72 A). TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig. 1 - Typical Output Characteristics Document Number: 91296 S-Pending-Rev. A, 22-Jul-08 Fig. 2 - Typical Output Characteristics www.vishay.com 3 IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL Vishay Siliconix RDS(on) , Drain-to-Source On Resistance (Normalized) Fig. 3 - Typical Transfer Characteristics 2.5 Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage ID = 72A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 0 VGS = 10V 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature ( ° C) Fig. 4 - Normalized On-Resistance vs. Temperature www.vishay.com 4 Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Document Number: 91296 S-Pending-Rev. A, 22-Jul-08 IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL Vishay Siliconix 80 ID , Drain Current (A) LIMITED BY PACKAGE 60 40 20 0 25 50 75 100 125 150 175 TC , Case Temperature ( ° C) Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 9 - Maximum Drain Current vs. Case Temperature 1000 VDS OPERATION IN THIS AREA LIMITED BY RDS(on) VGS ID , Drain Current (A) 10us 100 RD D.U.T. RG 100us + - VDD 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 1ms Fig. 10a - Switching Time Test Circuit 10 10ms VDS 90 % TC = 25 °C TJ = 175 °C Single Pulse 1 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) Fig. 8 - Maximum Safe Operating Area 1000 10 % VGS td(on) tr td(off) tf Fig. 10b - Switching Time Waveforms Document Number: 91296 S-Pending-Rev. A, 22-Jul-08 www.vishay.com 5 IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL Vishay Siliconix Thermal Response(Z thJC ) 1 D = 0.50 0.20 0.1 0.10 PDM 0.05 t1 0.02 t2 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.01 0.00001 0.0001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case VDS 15 V tp Driver L VDS D.U.T. RG + A - VDD IAS 20 V tp IAS 0.01 Ω EAS , Single Pulse Avalanche Energy (mJ) Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms 250 ID 29A 51A BOTTOM 72A TOP 200 150 100 50 0 25 50 75 100 125 150 175 Starting T J, Junction Temperature ( ° C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current www.vishay.com 6 Document Number: 91296 S-Pending-Rev. A, 22-Jul-08 IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL Vishay Siliconix Current regulator Same type as D.U.T. 50 kΩ QG 10 V 0.2 µF 12 V 0.3 µF QGS QGD + D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Maximum Avalanche Energy vs. Drain Current Fig. 13b - Gate Charge Test Circuit Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - RG • • • • dV/dt controlled by RG Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test Driver gate drive P.W. + Period D= + - VDD P.W. Period VGS = 10 V* D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage VDD Body diode forward drop Inductor current Ripple ≤ 5 % ISD * VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91296. Document Number: 91296 S-Pending-Rev. A, 22-Jul-08 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1