DSEP 8-12A HiPerFREDTM Epitaxial Diode IFAV = 10 A VRRM = 1200 V trr = 40 ns with soft recovery VRSM VRRM V V 1200 1200 Type A C TO-220 AC C DSEP 8-12A A C (TAB) A = Anode, C = Cathode, TAB = Cathode Symbol Conditions Maximum Ratings IFRMS IFAVM TC = 115°C; rectangular, d = 0.5 35 10 A A Features IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine 40 A EAS TVJ = 25°C; non-repetitive IAS = 8 A; L = 180 µH 6.9 mJ IAR VA = 1.25·VR typ.; f = 10 kHz; repetitive 0.8 A -55...+175 175 -55...+150 °C °C °C 60 W ● ● ● ● ● TVJ TVJM Tstg Ptot TC = 25°C Md mounting torque Weight typical 0.4...0.6 2 Nm g ● ● Applications ● ● ● Symbol IR ① VF ② Conditions Characteristic Values typ. max. TVJ = 25°C VR = VRRM TVJ = 150°C VR = VRRM 60 0.25 mA mA IF = 10 A; 1.96 2.94 V V 2.5 0.5 K/W K/W IF = 1 A; -di/dt = 50 A/ms; VR = 30 V; TVJ = 25°C 40 ns VR = 100 V; IF = 12 A; -diF/dt = 100 A/ms TVJ = 100°C 4 TVJ = 150°C TVJ = 25°C RthJC RthCH trr IRM ● ● ● ● ● ● ● Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 % ② Pulse Width = 300 ms, Duty Cycle < 2.0 % Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders Advantages ● A International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Dimensions see outlines.pdf IXYS reserves the right to change limits, test conditions and dimensions. © 2000 IXYS All rights reserved 008 Data according to IEC 60747 and per diode unless otherwise specified 1-2 DSEP 8-12A 30 2000 IF 25 nC 20 1500 Qr TVJ= 100°C A VR = 600V IRM IF= 20A IF= 10A IF= 5A TVJ=150°C 15 40 TVJ= 100°C VR = 600V A 30 1000 20 500 10 IF= 20A IF= 10A IF= 5A TVJ=100°C 10 TVJ= 25°C 5 0 0 1 2 3 VF 0 100 4V Fig. 1 Forward current IF versus VF Fig. 2 Reverse recovery charge Qr versus -diF/dt 2.0 0 A/ms 1000 -diF/dt 150 Kf Qr 90 40 µs tfr VFR 80 0.8 40 0.4 100 0.0 0 tfr IF= 20A IF= 10A IF= 5A 110 0.5 1.2 V 120 I RM ms 1000 600 A/ 800 -diF/dt TVJ= 100°C IF = 10A VFR 130 1.0 400 Fig. 3 Peak reverse current IRM versus -diF/dt 140 trr 1.5 200 120 TVJ= 100°C VR = 600V ns 0 80 120 °C 160 0 TVJ 200 400 800 A/ ms 1000 600 0 0 200 400 -diF/dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ Fig. 5 Recovery time trr versus -diF/dt 10 K/W 0.0 ms 1000 600 A/ 800 diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 1 2 3 ZthJC Rthi (K/W) ti (s) 1.449 0.558 0.493 0.0052 0.0003 0.017 0.1 0.01 0.001 0.00001 DSEP 8-12A 0.0001 0.001 0.01 s 0.1 1 t NOTE: Fig. 2 to Fig. 6 shows typical values © 2000 IXYS All rights reserved 008 Fig. 7 Transient thermal resistance junction to case 2-2