Bulletin I27104 rev. A 09/97 IRK.F72.. SERIES INT-A-pakä Power Modules FAST THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Features 71 A Fast turn-off thyristor Fast recovery diode High surge capability Electrically isolated baseplate 3000 V RMS isolating voltage Industrial standard package UL E78996 approved Description These series of INT-A-pak modules are intended for applications such as self-commutated inverters, DC choppers, electronic welders, induction heating and others where fast switching characteristics are required. Major Ratings and Characteristics Parameters IRK.F72.. Units 71 A 90 °C 158 A @ 50Hz 2100 A @ 60Hz 2200 A @ 50Hz 21.6 KA 2s @ 60Hz 19.8 KA 2s 216 KA 2√s tq 20 and 25 µs t rr 2 µs I T(AV) @ TC I T(RMS) I TSM 2 I t I 2√t VDRM / V RRM TJ range www.irf.com up to 1200 V - 40 to 125 o C 1 IRK.F72.. Series Bulletin I27104 rev. A 09/97 ELECTRICAL SPECIFICATIONS Voltage Ratings Type number IRK.F72.. Voltage VRRM/VDRM, maximum repetitive VRSM , maximum non- IRRM/I DRM max. Code peak reverse voltage repetitive peak rev. voltage @ T J = 125°C V V mA 08 800 800 12 1200 1200 30 Current Carrying Capacity ITM Frequency f ITM 180oel ITM Units 100µs o 180 el 50Hz 140 230 220 345 1860 2590 400Hz 170 280 250 406 900 1290 A 2500Hz 135 210 210 330 320 470 A 5000Hz 115 180 205 310 205 310 A 10000Hz 85 140 165 235 - - A Recovery voltage Vr 50 50 50 50 50 Voltage before turn-on Vd 80% VDRM 80% VDRM A 50 V 80% VDRM V Rise of on-state current di/dt 50 50 - - - - A/µ s Case temperature 90 60 90 60 90 60 °C Equivalent values for RC circuit 22 Ω / 0.15 µF 22 Ω / 0.15 µF 22 Ω / 0.15 µF On-state Conduction Parameter IT(AV) IRK.F72.. Units Conditions Maximum average on-state current 71 A @ Case temperature 90 °C 180° conduction, half sine wave IT(RMS) Maximum RMS current 158 A TC = 90°C, as AC switch ITSM Maximum peak, one-cycle, 2100 A t = 10ms No voltage non-repetitive surge current 2200 t = 8.3ms reapplied 1750 t = 10ms 100% VRRM 1830 t = 8.3ms reapplied Sinusoidal half wave, Initial T J = 125°C 2 It I2√t 2 Maximum I t for fusing Maximum I2√t for fusing 21.6 2 t = 10ms No voltage 19.8 t = 8.3ms reapplied 15.3 t = 10ms 100% VRRM 14.0 t = 8.3ms reapplied 216 VT(TO)1 Low level value of threshold voltage 1.28 VT(TO)2 High level value of threshold voltage 1.32 r t1 Low level value of on-state slope resistance 3.20 KA s KA2√s t = 0 to 10ms, no voltage reapplied V (16.7% x π x IT(AV) < I < π x IT(AV) ), TJ = TJ max. (I > π x IT(AV)), TJ = TJ max. mW (16.7% x π x IT(AV) < I < π x IT(AV) ), TJ = TJ max. I pk = 350A, TJ = TJ max., tp = 10ms sine pulse (I > π x IT(AV)), TJ = TJ max. r t2 High level value of on-state slope resistance 3.00 VTM Maximum on-state voltage drop 2.40 V IH Maximum holding current 600 mA TJ = 25°C, IT > 30 A IL Typical latching current 1000 mA TJ = 25°C, VA = 12V, Ra = 6Ω, Ig = 1A 2 www.irf.com IRK.F72.. Series Bulletin I27104 rev. A 09/97 Switching Parameter IRK.F72.. di/dt Maximum non-repetitive rate of rise trr Maximum recovery time t Maximum turn-off time Units Conditions 800 A/µs 2 µs Gate drive 20V, 20Ω, tr ≤ 1ms, VD= 80% VDRM T J = 125°C q K J 20 25 ITM = 350A, di/dt = -25A/µs, VR = 50V, TJ = 25°C ITM = 350A, T J = 125°C, di/dt = -25A/µs, µs VR = 50V, dv/dt = 400V/µs linear to 80% V DRM Blocking Parameter dv/dt IRK.F72.. Maximum critical rate of rise of off-state Units Conditions 1000 V/µs TJ = 125°C., exponential to = 67% VDRM 3000 V 50 Hz, circuit to base, TJ = 25°C, t = 1 s 30 mA voltage VINS RMS isolation voltage IRRM Maximum peak reverse and off-state IDRM leakage current TJ = 125°C, rated VDRM/VRRM applied Triggering Parameter IRK.F72.. Units Conditions P GM Maximum peak gate power 60 W f = 50 Hz, d% = 50 P G(AV) Maximum peak average gate power 10 W TJ = 125°C, f = 50Hz, d% = 50 IGM Maximum peak positive gate current 10 A TJ = 125°C, tp < 5ms - VGM Maximum peak negative gate voltage 5 V IGT Max. DC gate current required to trigger 200 mA V GT DC gate voltage required to trigger 3 V IGD DC gate current not to trigger 20 mA V GD DC gate voltage not to trigger 0.25 V TJ = 25°C, Vak 12V, Ra = 6 TJ = 125°C, rated VDRM applied Thermal and Mechanical Specifications Parameter IRK.F72.. TJ Max. junction operating temperature range - 40 to 125 T stg Max. storage temperature range - 40 to 150 RthJC Max. thermal resistance, junction to Units Conditions °C 0.17 K/W 0.035 K/W Per junction, DC operation case RthC-hs Max. thermal resistance, case to heatsink T wt Mounting torque ± 10% Approximate weight www.irf.com Mounting surface flat and greased Per module IAP to heatsink 4 - 6 (35 - 53) busbar to IAP 4 - 6 (35 - 53) 500 (17.8) A mounting compound is recommended. The torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Use of cable lugs is (lb*in) not recommendd, busbars should be used and restrained during tightening. Threads must be g (oz) lubricated with a compound Nm 3 IRK.F72.. Series Bulletin I27104 rev. A 09/97 ∆RthJC Conduction (The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction Rectangular conduction 180° 0.016 0.011 120° 0.019 0.020 90° 0.024 0.026 60° 0.035 0.037 30° 0.060 0.060 Units Conditions K/W TJ = 125°C Ordering Information Table Device Code IRK T F 7 2 1 2 3 4 5 1 - Module type 2 - Circuit configuration 3 - Fast SCR 4 - Current rating: IT(AV) x 10 rounded 5 - 1= 2= - 12 H K N 6 7 8 9 option with spacers and longer terminal screws option with standard terminal screws 6 - Voltage code: Code x 100 = VRRM (See Voltage Ratings Table) 7 - dv/dt code: H ≤ 400V/µs 8 - tq code: K ≤ 20µs J ≤ 25µs 9 - None = Standard devices N = Aluminum nitrade substrate NOTE: To order the Optional Hardware see Bulletin I27900 4 www.irf.com IRK.F72.. Series Bulletin I27104 rev. A 09/97 Outline Table - All dimensions in millimeters (inches) - Dimensions are nominal - Full engineering drawings are available on request - UL identification number for gate and cathode wire: UL 1385 - UL identification number for package: UL 94V0 For all types A B C D E IRK...1 25 (0.98) ---- ---- 41 (1.61) 47 (1.85) IRK...2 23 (0.91) 30 (1.18) 36 (1.42) ---- ---- IRKHF.. IRKLF.. IRKUF.. 130 IRK.F72.. Series R thJC(DC) = 0.25 K/W 120 110 Conduction Angle 100 90 30° 60° 90° 80 120° 180° 70 0 10 20 30 40 50 60 70 80 Average On-state Current (A) Fig. 1 - Current Ratings Characteristics www.irf.com IRKVF.. Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) IRKTF.. IRKKF.. IRKNF.. 130 IRK.F72.. Series R thJC(DC) = 0.25 K/W 120 110 Conduction Period 100 30° 90 60° 90° 120° 80 180° DC 70 0 20 40 60 80 100 120 Average On-state Current (A) Fig. 2 - Current Ratings Characteristics 5 IRK.F72.. Series 180° 120° 90° 60° 30° 120 100 80 RMS Limit 60 Conduction Angle 40 IRK.F72.. Series Per Ju nction T J= 125°C 20 0 0 10 20 30 40 50 60 70 80 Maximum Average On-state Power Loss (W) 140 200 DC 180° 120° 90° 60° 30° 180 160 140 120 100 RMS Limit 80 Conduction Period 60 IRK.F72.. Series Per Junction T = 125°C 40 20 J 0 0 20 80 100 120 Fig. 3 - On-state Power Loss Characteristics Fig. 4 - On-state Power Loss Characteristics 2000 At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial T J = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 1800 1600 1400 1200 1000 IRK.F72.. Series Per Junction 800 10 100 2200 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T J = 125°C No Voltage Reapplied Rated V RRMReapplied 2000 1800 1600 1400 1200 1000 IRK.F72.. Series Per Junction 800 0.01 Number Of Equal Amplitude Half Cycle Current Pulses (N) T J= 25°C 1000 T J = 125°C IRK.F72.. Series Per Junction 100 1 2 3 4 5 6 7 8 9 Fig. 6 - Maximum Non-Repetitive Surge Current Transient Thermal Impedance Z thJC(K/W ) 10000 10 1 0.1 Pulse Train Duration (s) Fig. 5 - Maximum Non-Repetitive Surge Current Instantaneous On-state Current (A) 60 Average On-state Current (A) 1 6 40 Average On-state Current (A) Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) Maximum Average On-state Power Loss (W) Bulletin I27104 rev. A 09/97 1 Steady State Value: R thJC = 0.25 K/W (DC Operation) 0.1 0.01 IRK.F72.. Series Per Junction 0.001 0.001 0.01 0.1 1 10 100 Instantaneous On-state Voltage (V) Square Wave Pulse Duration (s) Fig. 7 - On-state Voltage Drop Characteristics Fig. 8 - Thermal Impedance ZthJC Characteristic www.irf.com IRK.F72.. Series 160 I TM = 500 A IRK.F72.. Series T J= 125 °C 140 Maximum Reverse Recovery Current - Irr (A) Maximum Reverse Recovery Charge - Qrr (µC) Bulletin I27104 rev. A 09/97 300 A 120 200 A 100 100 A 80 60 50 A 40 20 10 20 30 40 50 60 70 80 90 100 120 110 100 I TM = 500 A IRK.F72.. Series T J = 125 °C 300 A 90 200 A 80 100 A 70 60 50 A 50 40 30 20 10 10 20 30 40 50 60 70 80 90 100 Rate Of Fall Of On-state Current - di/dt (A/µs) Rate Of Fall Of On-state Current - di/dt (A/µs) Fig. 9 - Reverse Recovery Charge Characteristic Fig. 10 - Reverse Recovery Current Characteristic Peak On-state Current (A) 1E4 Snubber circuit R s = 22 ohms C s = 0.15 µF V D = 80% V DRM IRK.F72.. Series Sinusoidal Pulse T C = 60 °C tp tp Snubber circuit R s = 22 ohms C s = 0.15 µF V D = 80% V DRM IRK.F72.. Series Sinusoidal Pulse T C = 90 °C 1E3 2500 1000 50 Hz 150 400 2500 50 Hz 5000 5000 1E2 1E1 150 400 1000 1E2 1E1 1E41E1 1E4 1E3 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 11 - Frequency Characteristics Peak On-state Current (A) 1E4 Snubber circuit R s = 22 ohms C s = 0.15 µF V D= 80% V DRM IRK.F72.. Series Trapezoidal Pulse T C= 60 °C, di/dt 50A/µs tp tp Snubber circuit R s = 22 ohms C s = 0.15 µF V D = 80% V DRM IRK.F72.. Series Trapezoidal Pulse T C = 60 °C, di/dt 100A/µs 50 Hz 1E3 150 50 Hz 400 150 1000 400 1000 2500 2500 5000 1E2 1E1 5000 1E2 1E3 1E4 1E41E1 1E1 Pulse Basewidth (µs) 1E2 1E3 1E4 Pulse Basewidth (µs) Fig. 12 - Frequency Characteristics www.irf.com 7 IRK.F72.. Series Bulletin I27104 rev. A 09/97 Peak On-state Current (A) 1E4 tp Snubber circuit R s = 22 ohms C s = 0.15 µF V D= 80% V DRM IRK.F72.. Series Trapezoidal Pulse T C= 90 °C, di/dt 50A/µs Snubber circuit R s = 22 ohms C s = 0.15 µF V D = 80% V DRM IRK.F72.. Series Trapezoidal Pulse T C = 90 °C, di/dt 100A/µs tp 1E3 50 Hz 50 Hz 150 150 400 400 1000 1000 2500 2500 5000 5000 1E2 1E1 1E2 1E4 1E41E1 1E1 1E3 1E2 Pulse Basewidth (µs) 1E3 1E4 Pulse Basewidth (µs) Fig. 13 - Frequency Characteristics 10 joules per pulse 2.5 1E3 0.25 0.5 10 joules per pulse 5 5 2.5 1 1 0.5 0.25 0.1 0.05 0.1 0.05 1E2 tp IRK.F72..Series Trapezoidal Pulse di/dt = 50A/µs IRK.F72.. Series Sinusoidal pulse tp 1E1 1E1 1E2 1E4 1E1 1E41E1 1E3 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 14 - Maximum On-state Energy Power Loss Characteristics 100 Rectangular gate pulse a) Recommended load line for rated di/dt : 20 V, 10 ohms tr<=1 µs b) Recommended load line for <=30% rated di/dt : 10 V, 10 ohms 10 tr<=1 µs (a) (b) VGD IGD 0.1 0.01 (1) IRK.F72.. Series 0.1 (1) PGM = 10W, tp = 10ms (2) PGM = 20W, tp = 5ms (3) PGM = 40W, tp = 2.5ms Tj=-40 °C 1 Tj=25 °C Tj=125 °C Instantaneous Gate Voltage (V) Peak On-state Current (A) 1E4 (2) (3) Frequency Limited by PG(AV) 1 10 100 Instantaneous Gate Current (A) Fig. 15 - Gate Characteristics 8 www.irf.com