Zowie MMBT3906G General purpose transistor pnp silicon lead free product Datasheet

Zowie Technology Corporation
General Purpose Transistor
PNP Silicon
Lead free product
COLLECTOR
3
3
MMBT3906G
BASE
1
1
2
2
EMITTER
SOT-23
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
-40
Vdc
Collector-Base Voltage
VCBO
-40
Vdc
Emitter-Base Voltage
VEBO
-5.0
Vdc
IC
-200
mAdc
Symbol
Max.
Unit
PD
225
1.8
mW
mW / oC
R JA
556
PD
300
2.4
R JA
TJ,TSTG
417
-55 to +150
Rating
Collector Current-Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board
o
Derate above 25 C
(1)
o
TA=25 C
Thermal Resistance Junction to Ambient
Total Device Dissipation Alumina Substrate,
o
Derate above 25 C
(2)
o
TA=25 C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
o
C/W
mW
mW / oC
o
C/W
o
C
DEVICE MARKING
MMBT3906=2A
o
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted)
Symbol
Min.
Max.
Unit
V(BR)CEO
-40
-
Vdc
Collector-Base Breakdowe Voltage
( IC= -10 uAdc, IE=0 )
V(BR)CBO
-40
-
Vdc
Emitter-Base Breakdowe Voltage
( IE= -10 uAdc, IC=0 )
V(BR)EBO
-5.0
-
Vdc
Base Cutoff Current
( VCE= -30 Vdc, VEB= -3.0 Vdc )
IBL
-
-50
nAdc
Collector Cutoff Current
( VCE= -30 Vdc, VEB= -3.0 Vdc )
ICEX
-
-50
nAdc
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdowe Voltage
( IC=1.0mAdc, IB=0 )
REV. 0
(3)
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o
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Continued)
Min.
Max.
60
80
100
60
30
300
-
VCE(sat)
-
-0.25
-0.4
Vdc
VBE(sat)
-0.65
-
-0.85
-0.95
Vdc
fT
250
-
MHZ
Output Capacitance
( VCB= -5.0 Vdc, IE=0, f=1.0 MHZ )
Cobo
-
4.5
pF
Input Capacitance
( VEB= -0.5 Vdc, IC=0, f=1.0 MHZ )
Cibo
-
10
pF
Input Impedance
( VCE= -10 Vdc, IC= -1.0 mAdc, f=1.0 kHZ )
hie
2.0
12
k ohms
Voltage Feedback Ratio
( VCE= -10 Vdc, IC= -1.0 mAdc, f=1.0 kHZ )
hre
0.1
10
X 10
Small-Signal Current Gain
( VCE= -10 Vdc, IC= -1.0 mAdc, f=1.0 kHZ )
hfe
100
400
-
Output Admittance
( VCE= -10 Vdc, IC= -1.0 mAdc, f=1.0 kHZ )
hoe
3.0
60
u mhos
Noise Figure
( VCE= -5.0 Vdc, IC= -100 uAdc, RS=1.0 k ohm, f=1.0 kHZ )
NF
-
4.0
dB
( VCC= -3.0 Vdc, VBE= -0.5 Vdc,
IC= -10 mAdc, IB1= -1.0 mAdc )
td
-
35
tr
-
35
( VCC= -3.0 Vdc,
IC= -10 mAdc, IB1=IB2= -1.0 mAdc )
ts
-
225
tf
-
75
Symbol
Characteristic
ON CHARACTERISTICS
Unit
(3)
DC Current Gain
( IC= -0.1 mAdc, VCE= -1.0 Vdc )
( IC= -1.0 mAdc, VCE= -1.0 Vdc )
( IC= -10 mAdc, VCE= -1.0 Vdc )
( IC= -50 mAdc, VCE= -1.0 Vdc )
( IC= -100 mAdc, VCE= -1.0 Vdc )
Collector-Emitter Saturation Voltage
( IC= -10 mAdc, IB=-1.0 mAdc )
( IC= -50 mAdc, IB= -5.0 mAdc )
HFE
-
(3)
(3)
Base-Emitter Saturation Voltage
( IC= -10 mAdc, IB= -1.0 mAdc )
( IC= -50 mAdc, IB= -5.0 mAdc )
SMALL-SIGNAL CHARACTERISTIC
Current-Gain-Bandwidth Product
( IC= -10 mAdc, VCE= -20 Vdc, f=100 MHZ )
-4
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(1) FR-5=1.0 x 0.75 x 0.062in.
(2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina.
(3) Pulse Test : Pulse Width 300uS, Duty Cycle
REV. 0
nS
nS
2.0%.
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Zowie Technology Corporation
MMBT3906G
3V
3V
< 1 ns
+9.1 V
275
275
< 1 ns
±0.5 V
10 k
10 k
0
CS < 4 pF*
10.6 V
300 ns
10 < t1< 500us
DUTY CYCLE = 2%
CS < 4 pF*
1N916
t1
DUTY CYCLE = 2%
10.9 V
* Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
10
5000
o
TJ=25 C
2000
5.0
Q, CHARGE (pC)
CAPACITANCE ( pF )
VCC=40 V
IC/IB=10
3000
7.0
Cobo
Cibo
3.0
o
TJ=125 C
1000
2.0
700
500
300
200
QT
QA
100
70
1.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
50
20 30 40
1.0
2.0 3.0
Figure 3. Capacitance
20
30
50 70 100
200
Figure 4. Charge Data
500
500
300
VCC=40 V
IB1=IB2
300
IC/IB=10
200
tr, RISE TIME ( ns )
200
100
TIME (ns)
5.0 7.0 10
IC, COLLECTOR CURRENT ( mA )
REVERSE BIAS ( VOLTS )
70
tr @ VCC=3.0 V
50
15 V
30
20
IC/IB=20
100
70
50
30
20
IC/IB=10
40 V
10
10
2.0 V
7
7
td @ VOB=0 V
5
5
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
IC, COLLECTOR CURRENT ( mA )
Figure 5. Turn-On Time
REV. 0
200
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
IC, COLLECTOR CURRENT ( mA )
Figure 6. Fall Time
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Zowie Technology Corporation
MMBT3906G
TYPICAL TRANSIENT CHARACTERISTICS
NOISE FIGURE VARIATIONS
o
(VCE= -5.0Vdc, TA=25 C, Bandwidth=1.0HZ)
12
SOURCE RESISTANCE=200
IC=1.0 mA
NF, NOISE FIGURE ( bB )
NF, NOISE FIGURE ( bB )
5.0
4.0
SOURCE RESISTANCE=200
IC=0.5 mA
3.0
SOURCE RESISTANCE=2.0 K
IC=50uA
2.0
1.0
f = 1.0 KHZ
IC =1.0 mA
10
8
IC =100 uA
IC =0.5 mA
6
IC =50 uA
4
SOURCE RESISTANCE=2.0 K
2
0
0
0.1
0.2
0.4
1.0
2.0
4.0
10
20
40
100
0.1
f, FREQUENCY (kHz)
0.2
0.4
1.0
2.0
4.0
10
40
20
100
RS, SOURCE RESISTANCE ( k OHMS )
Figure 7.
Figure 8.
h PARAMETERS
o
(VCE= -10Vdc, f=1.0 kHZ, TA=25 C)
100
hoe, OUTPUTADMITTANCE (umhos)
hfe, DC CURRENT GAIN
300
200
100
70
50
50
30
20
10
7
5
30
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
0.1
0.2
IC, COLLECTOR CURRENT ( mA )
hre, VOLTAGE FEEDBACK RATIO(X 10-4)
hie, INPUT IMPEDANCE (k OHMS)
10
5.0
2.0
1.0
0.5
0.2
REV. 0
0.3
0.5
1.0
2.0 3.0
1.0
2.0
3.0
5.0
10
Figure 10. Output Admittance
20
0.2
0.5
IC, COLLECTOR CURRENT ( mA )
Figure 9. Current Gain
0.1
0.3
5.0
10
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0
IC, COLLECTOR CURRENT ( mA )
IC, COLLECTOR CURRENT ( mA )
Figure 11. Input Impedance
Figure 12. Voltage Feedback Ratio
10
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Zowie Technology Corporation
MMBT3906G
hFE, DC CURRENT GAIN (NORMALIZED)
TYPICAL STATIC CHARACTERISTICS
2.0
o
TJ = +125 C
VCE=1.0V
o
TJ = +25 C
1.0
0.7
o
TJ = -55 C
0.5
0.3
0.2
0.1
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
70
50
100
200
IC, COLLECTOR CURRENT ( mA )
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)
Figure 13. DC Current Gain
1.0
o
TJ = 25 C
0.8
10 mA
IC = 1.0 mA
30 mA
100 mA
0.6
0.4
0.2
0
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
IB, BASE CURRENT ( mA )
Figure 14. Collector Saturation Region
1.0
o
TEMPERATURE COEFFICIENTS (mV / C)
1.0
VBE(sat) @ IC/IB=10
VBE @ ICE=1.0 V
0.6
0.4
0.2
VCE(sat) @ IC/IB=10
o
0.5
VC
o
+25 C to +125 C
FOR VCE(sat)
0
o
o
-55 C to +25 C
-0.5
o
o
-55 C to +25 C
-1.0
o
o
+25 C to +125 C
VB
FOR VBE(sat)
-1.5
V,
V, VOLTAGE ( VOLTS )
0.8
0
-2.0
1.0
2.0
5.0
10
20
50
IC, COLLECTOR CURRENT ( mA )
Figure 17. " ON " Voltage
REV. 0
100
200
0
20
40
60
80
100
120
140
160
180 200
IC, COLLECTOR CURRENT ( mA )
Figure 16. Temperature Coefficients
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