Fairchild IRFP244B 250v n-channel mosfet Datasheet

IRFP244B
250V N-Channel MOSFET
General Description
Features
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converter and
switch mode power supplies.
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•
•
•
•
•
16A, 250V, RDS(on) = 0.28Ω @VGS = 10 V
Low gate charge ( typical 47 nC)
Low Crss ( typical 30 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
D
!
●
◀
G!
!
TO-3P
G DS
Absolute Maximum Ratings
Symbol
VDSS
ID
S
IRFP Series
TC = 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (TC = 25°C)
Drain Current
- Continuous (TC = 100°C)
IDM
Drain Current
▲
●
●
- Pulsed
(Note 1)
IRFP244B
250
Units
V
16
A
10.1
A
64
A
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
480
mJ
IAR
Avalanche Current
(Note 1)
16
A
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
(Note 1)
18
5.5
180
1.45
-55 to +150
mJ
V/ns
W
W/°C
°C
300
°C
dv/dt
PD
TJ, TSTG
TL
(Note 3)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
Parameter
Thermal Resistance, Junction-to-Case
Typ
--
RθCS
Thermal Resistance, Case-to-Sink
RθJA
Thermal Resistance, Junction-to-Ambient
©2001 Fairchild Semiconductor Corporation
Max
0.69
Units
°C/W
0.24
--
°C/W
--
40
°C/W
Rev. B, November 2001
IRFP244B
November 2001
Symbol
TC = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max
Units
250
--
--
V
--
0.24
--
V/°C
VDS = 250 V, VGS = 0 V
--
--
10
µA
VDS = 200 V, TC = 125°C
--
--
100
µA
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
2.0
--
4.0
V
--
0.22
0.28
Ω
--
12.5
--
S
--
1250
1600
pF
--
150
195
pF
--
30
40
pF
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
∆BVDSS
/
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
IDSS
IGSSF
IGSSR
Zero Gate Voltage Drain Current
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 8.0 A
gFS
Forward Transconductance
VDS = 40 V, ID = 8.0 A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 125 V, ID = 14 A,
RG = 25 Ω
(Note 4, 5)
VDS = 200 V, ID = 14 A,
VGS = 10 V
(Note 4, 5)
--
20
50
ns
--
115
240
ns
--
150
310
ns
--
95
200
ns
--
47
60
nC
--
6.2
--
nC
--
23
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
16
A
ISM
--
--
64
A
VSD
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = 16 A
Drain-Source Diode Forward Voltage
--
--
1.5
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 14 A,
dIF / dt = 100 A/µs
(Note 4)
--
240
--
ns
--
1.96
--
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 3mH, IAS = 16A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 14A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2001 Fairchild Semiconductor Corporation
Rev. B, November 2001
IRFP244B
Electrical Characteristics
IRFP244B
Typical Characteristics
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
Top :
ID, Drain Current [A]
1
10
ID, Drain Current [A]
1
10
0
10
o
150 C
o
25 C
0
10
o
-55 C
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
※ Notes :
1. VDS = 40V
2. 250μ s Pulse Test
-1
-1
10
-1
0
10
10
1
10
2
10
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
1.5
VGS = 10V
1
IDR, Reverse Drain Current [A]
RDS(ON) [Ω ],
Drain-Source On-Resistance
1.2
10
VGS = 20V
0.9
0.6
0
10
0.3
150℃
25℃
※ Notes :
1. VGS = 0V
2. 250μ s Pulse Test
※ Note : TJ = 25℃
-1
0.0
0
10
20
30
40
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
3500
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
3000
12
VDS = 50V
Ciss
2000
1500
Coss
1000
Crss
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
500
VGS, Gate-Source Voltage [V]
10
2500
Capacitance [pF]
50
VDS = 125V
VDS = 200V
8
6
4
2
※ Note : ID = 14 A
0
0
-1
10
0
10
1
10
0
5
10
15
20
25
30
35
40
45
50
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
©2001 Fairchild Semiconductor Corporation
Rev. B, November 2001
IRFP244B
Typical Characteristics
(Continued)
1.2
3.0
RDS(ON) , (Normalized)
Drain-Source On-Resistance
BV DSS , (Normalized)
Drain-Source Breakdown Voltage
2.5
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = 250 μ A
0.9
0.8
-100
-50
0
50
100
2.0
1.5
1.0
※ Notes :
1. VGS = 10 V
2. ID = 7.0 A
0.5
150
0.0
-100
200
-50
0
50
100
150
200
o
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
18
Operation in This Area
is Limited by R DS(on)
2
10
15
12
ID, Drain Current [A]
ID, Drain Current [A]
100 µs
1 ms
1
10
10 ms
DC
0
10
9
6
※ Notes :
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
3
0
25
-1
10
0
1
10
2
10
10
50
Figure 9. Maximum Safe Operating Area
100
125
150
Figure 10. Maximum Drain Current
vs Case Temperature
0
D = 0 .5
※ N o te s :
1 . Z θ J C (t) = 0 .6 9 ℃ /W M a x .
2 . D u ty F a c to r, D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C (t)
0 .2
10
-1
0 .1
0 .0 5
PDM
0 .0 2
0 .0 1
Z
θ JC
(t), T h e r m a l R e s p o n s e
10
75
TC, Case Temperature [℃]
VDS, Drain-Source Voltage [V]
t1
t2
s in g le p u ls e
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
©2001 Fairchild Semiconductor Corporation
Rev. B, November 2001
IRFP244B
Gate Charge Test Circuit & Waveform
VGS
Same Type
as DUT
50KΩ
Qg
200nF
12V
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS
RL
VDS
90%
VDD
VGS
RG
VGS
DUT
10V
10%
td(on)
tr
td(off)
t on
tf
t off
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
BVDSS
IAS
ID
RG
VDD
DUT
10V
tp
©2001 Fairchild Semiconductor Corporation
ID (t)
VDS (t)
VDD
tp
Time
Rev. B, November 2001
IRFP244B
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
©2001 Fairchild Semiconductor Corporation
Rev. B, November 2001
IRFP244B
Package Dimensions
TO-3P
15.60 ±0.20
3.00 ±0.20
3.80 ±0.20
+0.15
1.00 ±0.20
18.70 ±0.20
23.40 ±0.20
19.90 ±0.20
1.50 –0.05
16.50 ±0.30
2.00 ±0.20
9.60 ±0.20
4.80 ±0.20
3.50 ±0.20
13.90 ±0.20
ø3.20 ±0.10
12.76 ±0.20
13.60 ±0.20
1.40 ±0.20
+0.15
5.45TYP
[5.45 ±0.30]
5.45TYP
[5.45 ±0.30]
0.60 –0.05
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
Rev. B, November 2001
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PRODUCT STATUS DEFINITIONS
Definition of Terms
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Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
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This datasheet contains final specifications. Fairchild
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Not In Production
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The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. H4