IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package MJE15028, MJE15030 MJE15029, MJE15031 Boca Semiconductor Corp. BSC MJE15028, 15030 MJE15029, 15031 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS High frequency Drivers in Audio Amplifiers PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 4 1 2 F DIM M IN. A B C D E F G H J K L M N O 14.42 9.63 3.56 K All dim insions in m m . L N O 1 2 3 O A H B C E J D G M ABSOLUTE MAXIMUM RATINGS Collector-base voltage (open emitter) Collector-emitter voltage (open base) Collector current Total power dissipation up to TC = 25°C Junction temperature Collector-emitter saturation voltage IC = 1A; IB = 0.1A D.C. current gain IC = 0.1 A; VCE = 2 V M A X. 16.51 10.67 4.83 0.90 1.15 1.40 3.75 3.88 2.29 2.79 2.54 3.43 0.56 12.70 14.73 2.80 4.07 2.03 2.92 31.24 DE G 7 VCBO VCEO IC Ptot Tj 15028 15029 max. 120 max. 120 max. max. max. 15030 15031 150 V 150 V 8.0 A 50 W 150 °C VCEsat max. 0.5 hFE min. 40 RATINGS (at TA=25°C unless otherwise specified) Limiting values Collector-base voltage (open emitter) Collector-emitter voltage (open base) 3 VCBO VCEO 15028 15029 max. 120 max. 120 V 15030 15031 150 V 150 V http://www.bocasemi.com Continental Device India Limited Data Sheet Page 1 of 3 MJE15028, MJE15030 MJE15029, MJE15031 Emitter base voltage (open collector) Collector current Collector current (Peak value) Base current Total power dissipation up to TC = 25°C Derate above 25°C Total power dissipation up to TA = 25°C Derate above 25°C Junction temperature Storage temperature VEBO IC IC IB Ptot Tj T stg THERMAL RESISTANCE From junction to case From junction to ambient Rth j–c Rth j–a Ptot max. max. max. max. max. max. max. max. max. = = CHARACTERISTICS Tamb = 25°C unless otherwise specified Collector cutoff current IB = 0; VCE = 120V IB = 0; VCE = 150V IE = 0; VCB = 120V IE = 0; VCB = 150V Emitter cut-off current IC = 0; VEB = 5V Breakdown voltages IC = 10 mA; IB = 0 IC = 1 mA; IE = 0 IE = 1 mA; IC = 0 Saturation voltage IC = 1 A; IB = 0.1 A Base emitter on voltage IC = 1A; VCE = 2V D.C. current gain IC = 0.1 A; VCE = 2 V IC = 2 A; VCE = 2 V IC = 3 A; VCE = 2 V IC = 4 A; VCE = 2 V Transition frequency f = 10 MHz IC = 500 mA; VCE = 10 V 5.0 8.0 16 2.0 50 0.4 2.0 0.016 150 –65 to +150 2.5 62.5 15028 15029 ICEO ICEO ICBO ICBO max. 0.1 max. – max. 10 max. – IEBO max. V A A A W W/°C W W/°C ºC ºC °C/W °C/W 15030 15031 – 0.1 – 10 10 mA mA µA µA µA VCEO(sus)* min. 120 VCBO min. 120 VEBO min. 150 V 150 V 5.0 V VCEsat* max. 0.5 V VBE(on)* max. 1.0 V hFE* hFE* hFE* hFE* min. min. min. min. 40 40 40 20 fT (1) min. 30 MHz * Pulse test: pulse width ≤ 300 µs; duty cycle ≤ 2%. (1) fT = |hfe|• ftest http://www.bocasemi.com Continental Device India Limited Data Sheet Page 2 of 3