PD - 96400A
AUTOMOTIVE GRADE
AUIRFS3004
AUIRFSL3004
Features
HEXFET® Power MOSFET
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
l
l
l
l
l
l
l
D
G
S
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating . These features
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a
wide variety of other applications.
VDSS
RDS(on) typ.
max.
ID (Silicon Limited)
40V
1.4mΩ
1.75mΩ
340A
ID (Package Limited)
195A
c
D
D
S
G
G
D2Pak
AUIRFS3004
D
S
TO-262
AUIRFSL3004
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications
is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal
resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T A)
is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
VGS
dv/dt
EAS (Thermally limited)
IAR
EAR
TJ
TSTG
Max.
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
d
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
f
d
e
d
Units
c
c
340
240
195
1310
380
2.5
± 20
4.4
300
See Fig. 14, 15, 22a, 22b
A
W
W/°C
V
V/ns
mJ
A
mJ
-55 to + 175
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
°C
300
Thermal Resistance
Parameter
RθJC
RθJA
Junction-to-Case
kl
Junction-to-Ambient (PCB Mount) , D2Pak
j
Typ.
Max.
Units
–––
–––
0.40
40
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
10/4/11
AUIRFS/SL3004
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
ΔV(BR)DSS/ΔTJ
RDS(on)
VGS(th)
gfs
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
RG
40
––– –––
––– 0.037 –––
–––
1.4 1.75
2.0
–––
4.0
1170 ––– –––
––– –––
20
––– ––– 250
––– ––– 100
––– ––– -100
–––
2.2
–––
Conditions
V VGS = 0V, ID = 250μA
V/°C Reference to 25°C, ID = 5mA
mΩ VGS = 10V, ID = 195A
V VDS = VGS, ID = 250μA
S VDS = 10V, ID = 195A
VDS = 40V, VGS = 0V
μA
VDS = 40V, VGS = 0V, TJ = 125°C
VGS = 20V
nA
VGS = -20V
Ω
d
g
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)
Min. Typ. Max. Units
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
h
i
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
160
40
68
92
23
220
90
130
9200
2020
1340
2440
2690
240
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC
ns
Conditions
ID = 187A
VDS =20V
VGS = 10V
ID = 187A, VDS =0V, VGS = 10V
VDD = 26V
ID = 195A
RG = 2.7Ω
VGS = 10V
VGS = 0V
VDS = 25V
ƒ = 1.0 MHz, See Fig. 5
VGS = 0V, VDS = 0V to 32V, See Fig. 11
VGS = 0V, VDS = 0V to 32V
g
g
pF
Diode Characteristics
Parameter
IS
Continuous Source Current
VSD
trr
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
ISM
d
Notes:
Calculated continuous current based on maximum allowable
junction temperature. Bond wire current limit is 195A. Note that
current limitations arising from heating of the device leads may
occur with some lead mounting arrangements. (Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.016mH,RG = 25Ω,
IAS = 195A, VGS =10V. Part not recommended for use above
this value .
2
Min. Typ. Max. Units
–––
––– 340
–––
–––
c
1310
Conditions
MOSFET symbol
A
showing the
integral reverse
D
G
p-n junction diode.
TJ = 25°C, IS = 195A, VGS = 0V
TJ = 25°C
VR = 34V,
TJ = 125°C
IF = 195A
di/dt = 100A/μs
TJ = 25°C
S
g
––– –––
1.3
V
–––
27
–––
ns
–––
31
–––
–––
18
–––
nC
TJ = 125°C
–––
41
–––
–––
1.2
–––
A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
g
ISD ≤ 195A, di/dt ≤ 930A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniques refer to
application note #AN-994.
Rθ is measured at TJ approximately 90°C.
RθJC value shown is at time zero.
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AUIRFS/SL3004
Qualification Information†
Automotive
(per AEC-Q101)
Qualification Level
Moisture Sensitivity Level
Machine Model
Human Body Model
ESD
Charged Device Model
RoHS Compliant
††
Comments:
This part
number(s) passed
Automotive qualification. IR’s Industrial and
Consumer qualification level is granted by
extension of the higher Automotive level.
MSL1
3L-D2 PAK
3L-TO-262
N/A
Class M4(+/- 800V )
AEC-Q101-002
†††
Class H3A(+/- 6000V )
AEC-Q101-001
Class C5(+/- 2000V )
AEC-Q101-005
†††
†††
Yes
†
Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
††
Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
†††
Highest passing voltage
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3
AUIRFS/SL3004
10000
10000
1000
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
4.8V
4.5V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
4.8V
4.5V
1000
4.5V
100
BOTTOM
4.5V
100
≤60μs PULSE WIDTH
≤60μs PULSE WIDTH
Tj = 175°C
Tj = 25°C
10
10
0.1
1
10
100
0.1
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
100
2.0
100
T J = 175°C
T J = 25°C
10
1
VDS = 25V
≤60μs PULSE WIDTH
0.1
ID = 195A
VGS = 10V
1.5
1.0
0.5
1
2
3
4
5
6
7
8
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
100000
14.0
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
VGS, Gate-to-Source Voltage (V)
ID= 187A
C oss = C ds + C gd
C, Capacitance (pF)
10
Fig 2. Typical Output Characteristics
1000
Ciss
10000
Coss
Crss
1000
100
12.0
VDS= 32V
VDS= 20V
10.0
8.0
6.0
4.0
2.0
0.0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
4
1
V DS, Drain-to-Source Voltage (V)
0
50
100
150
200
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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AUIRFS/SL3004
10000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
T J = 175°C
100
T J = 25°C
10
1
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1000
100μsec
1msec
100
10msec
DC
10
Tc = 25°C
Tj = 175°C
Single Pulse
VGS = 0V
1
0.1
0.0
0.5
1.0
1.5
1
2.0
350
ID, Drain Current (A)
Limited By Package
250
200
150
100
50
0
50
75
100
125
150
175
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
25
50
Id = 5mA
48
46
44
42
40
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Temperature ( °C )
T C , Case Temperature (°C)
Fig 9. Maximum Drain Current vs.
Case Temperature
2.0
Fig 10. Drain-to-Source Breakdown Voltage
EAS , Single Pulse Avalanche Energy (mJ)
1400
1.8
ID
TOP
30A
54A
BOTTOM 195A
1200
1.6
1000
1.4
Energy (μJ)
100
VDS, Drain-to-Source Voltage (V)
VSD, Source-to-Drain Voltage (V)
300
10
1.2
1.0
0.8
0.6
0.4
0.2
0.0
800
600
400
200
0
-5
0
5
10 15 20 25 30 35 40 45
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
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25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
5
AUIRFS/SL3004
Thermal Response ( Z thJC ) °C/W
1
D = 0.50
0.1
0.20
0.10
τJ
0.05
0.02
0.01
0.01
R1
R1
τJ
τ1
R2
R2
R3
R3
τC
τ
τ2
τ1
τ2
τ3
τ3
τ4
τ4
Ci= τi/Ri
Ci i/Ri
1E-005
τi (sec)
0.00646
0.000005
0.10020
0.000124
0.18747
0.001374
0.10667
0.008465
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
Ri (°C/W)
R4
R4
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Avalanche Current (A)
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 150°C and
Tstart =25°C (Single Pulse)
0.01
100
0.05
0.10
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
320
280
EAR , Avalanche Energy (mJ)
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 22a, 22b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 195A
240
200
160
120
80
40
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 15. Maximum Avalanche Energy vs. Temperature
6
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4.5
10
4.0
9
3.5
8
3.0
2.5
ID = 250μA
TJ = 25°C
TJ = 125°C
6
5
ID = 1.0mA
2.0
IF = 78A
V R = 34V
7
IRRM (A)
VGS(th) , Gate threshold Voltage (V)
AUIRFS/SL3004
ID = 1.0A
4
1.5
3
1.0
-75 -50 -25 0
2
25 50 75 100 125 150 175 200
100
200
T J , Temperature ( °C )
400
500
Fig. 17 - Typical Recovery Current vs. dif/dt
Fig 16. Threshold Voltage vs. Temperature
350
11
10
9
8
IF = 117A
V R = 34V
300
IF = 78A
V R = 34V
TJ = 25°C
TJ = 125°C
250
TJ = 25°C
TJ = 125°C
7
QRR (nC)
IRRM (A)
300
diF /dt (A/μs)
6
5
200
150
4
3
100
2
50
1
100
200
300
400
100
500
200
300
400
500
diF /dt (A/μs)
diF /dt (A/μs)
Fig. 19 - Typical Stored Charge vs. dif/dt
Fig. 18 - Typical Recovery Current vs. dif/dt
400
350
QRR (nC)
300
250
IF = 117A
V R = 34V
TJ = 25°C
TJ = 125°C
200
150
100
50
0
100
200
300
400
500
diF /dt (A/μs)
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Fig. 20 - Typical Stored Charge vs. dif/dt
7
AUIRFS/SL3004
Driver Gate Drive
D.U.T
-
-
-
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
RG
• dv/dt controlled by RG
• Driver same type as D.U.T.
• I SD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
D=
Period
P.W.
+
V DD
+
-
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor
InductorCurrent
Curent
ISD
Ripple ≤ 5%
*
VGS = 5V for Logic Level Devices
Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V(BR)DSS
15V
DRIVER
L
VDS
tp
D.U.T
RG
VGS
20V
+
V
- DD
IAS
A
0.01Ω
tp
I AS
Fig 22a. Unclamped Inductive Test Circuit
RD
V DS
Fig 22b. Unclamped Inductive Waveforms
VDS
90%
VGS
D.U.T.
RG
+
- V DD
V10V
GS
10%
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
td(on)
Fig 23a. Switching Time Test Circuit
tr
t d(off)
Fig 23b. Switching Time Waveforms
Id
Current Regulator
Same Type as D.U.T.
Vds
Vgs
50KΩ
12V
tf
.2μF
.3μF
D.U.T.
+
V
- DS
Vgs(th)
VGS
3mA
IG
ID
Current Sampling Resistors
8
Fig 24a. Gate Charge Test Circuit
Qgs1 Qgs2
Qgd
Qgodr
Fig 24b. Gate Charge Waveform
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AUIRFS/SL3004
D2Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
Part Number
AUFS3004
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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9
AUIRFS/SL3004
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
Part Number
AUFSL3004
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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AUIRFS/SL3004
D2Pak (TO-263AB) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
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60.00 (2.362)
MIN.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
11
AUIRFS/SL3004
Ordering Information
Base part
Package Type
AUIRFSL3004
AUIRFS3004
TO-262
D2Pak
12
Standard Pack
Form
Tube
Tube
Tape and Reel Left
Tape and Reel Right
Complete Part Number
Quantity
50
50
800
800
AUIRFSL3004
AUIRFS3004
AUIRFS3004TRL
AUIRFS3004TRR
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AUIRFS/SL3004
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the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services
at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow
automotive industry and / or customer specific requirements with regards to product discontinuance and process change
notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s
standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this
warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily
performed.
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http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
www.irf.com
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