AP9979GH-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Single Drive Requirement ▼ Fast Switching Characteristic 60V RDS(ON) 48mΩ ID G ▼ RoHS Compliant & Halogen-Free BVDSS 20A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. G D S TO-252(H) Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage +25 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V 20 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V 13 A 50 A 34.7 W 2 W 1 IDM Pulsed Drain Current PD@TC=25℃ Total Power Dissipation 3 PD@TA=25℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case 3 Maximum Thermal Resistance, Junction-ambient (PCB mount) Data and specifications subject to change without notice Value Units 3.6 ℃/W 62.5 ℃/W 1 201206132 AP9979GH-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 60 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=13A - - 48 mΩ VGS=4.5V, ID=7A - - 60 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=13A - 18 - S IDSS Drain-Source Leakage Current VDS=60V, VGS=0V - - 10 uA IGSS Gate-Source Leakage VGS=+25V, VDS=0V - - +100 nA Qg Total Gate Charge ID=13A - 11 18 nC Qgs Gate-Source Charge VDS=48V - 3 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 6 - nC td(on) Turn-on Delay Time VDS=30V - 7 - ns tr Rise Time ID=13A - 20 - ns td(off) Turn-off Delay Time RG=3.3Ω - 19 - ns tf Fall Time VGS=10V - 3 - ns Ciss Input Capacitance VGS=0V - 990 1560 pF Coss Output Capacitance VDS=25V - 90 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 70 - pF Rg Gate Resistance f=1.0MHz - 1.2 2.4 Ω Min. Typ. Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage IS=13A, VGS=0V - - 1.2 V trr Reverse Recovery Time IS=13A, VGS=0V, - 32 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 37 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP9979GH-HF 50 50 10V 7.0V 5.0V T C =25 C ID , Drain Current (A) 40 40 4.5V 30 20 V G =3.0V 10 5.0V 4.5V 30 20 V G =3.0V 10 0 0 0 2 4 6 8 10 0 2 V DS , Drain-to-Source Voltage (V) 4 6 8 10 12 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 70 2.0 I D =13A V G =10V ID=7A T C =25 o C Normalized RDS(ON) 60 RDS(ON) (mΩ) 10V 7.0V o T C = 150 C ID , Drain Current (A) o 50 1.6 1.2 0.8 40 0.4 30 2 4 6 8 -50 10 V GS , Gate-to-Source Voltage (V) 0 50 100 150 o T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 12 1.5 T j =150 o C Normalized VGS(th) IS(A) 9 T j =25 o C 6 1.1 0.7 3 0 0.3 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP9979GH-HF f=1.0MHz 10000 12 I D = 13 A V DS = 30 V V DS =38V V DS = 48 V 8 C iss 1000 C (pF) VGS , Gate to Source Voltage (V) 10 6 C oss 100 4 C rss 2 0 10 0 10 20 30 1 5 Q G , Total Gate Charge (nC) 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 Normalized Thermal Response (R thjc) 1 100us ID (A) 10 1ms 1 10ms 100ms DC T C =25 o C Single Pulse 0.1 Duty factor=0.5 0.2 0.1 0.1 0.05 PDM 0.02 t 0.01 T Single Pulse Duty factor = t/T Peak Tj = PDM x Rthjc + TC 0.01 0.1 1 10 100 1000 0.00001 0.0001 V DS , Drain-to-Source Voltage (V) 0.001 0.01 0.1 1 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 30 VG ID , Drain Current (A) V DS =5V T j =25 o C QG T j =150 o C 20 4.5V QGS QGD 10 Charge 0 0 2 4 6 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform Q