CTH5003NS-T52 N-Channel Enhancement MOSFET Features Description • Drain-Source Breakdown Voltage VDSS 30V • Drain-Source On-Resistance The CTH5003NS-T52 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench RDS(ON) 8.3mΩ, at VGS= 10V, ID= 30A technology. This high density process is especially RDS(ON) 14mΩ, at VGS= 4.5V, ID= 15A ℃I Continuous Drain Current at TC=25 • Advanced high cell density Trench Technology • RoHS Compliance & Halogen Free D tailored to minimize on-state resistance. These =50A • devices are particularly suited for low voltage application. Applications • DC/DC Converter • Power Management • Load Switch • IPC Package Outline Schematic Drain Drain Gate Gate Source Source CT Micro Proprietary & Confidential Page 1 Rev 3 Jun, 2015 CTH5003NS-T52 N-Channel Enhancement MOSFET Absolute Maximum Rating at 25oC Symbol Parameters Test Conditions Min VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V 50 A 1 100 A 1 40 W 2 ID ℃ Continuous Drain Current @TC=25 IDM Pulsed Drain Current PD ℃ Total Power Dissipation @TC=25 TSTG Storage Temperature Range -55 to 150 °C TJ Operating Junction Temperature Range -55 to 150 °C Note Thermal Characteristics Symbol RӨJC Parameters Test Conditions Thermal Resistance Junction-Case CT Micro Proprietary & Confidential Page 2 Min Typ -- -- Max Units 3.1 oC /W Notes 1,4 Rev 3 Jun, 2015 CTH5003NS-T52 N-Channel Enhancement MOSFET Electrical Characteristics T A = 25°C (unless otherwise specified) Static Characteristics Symbol Parameters Test Conditions Min Typ Max Units BVDSS Drain-Source Breakdown Voltage VGS= 0V, ID= 250µA 30 - - V IDSS Drain-Source Leakage Current VDS = 30V, VGS = 0V - - 1 µA IGSS Gate-Source Leakage Current VGS = ±20V, VDS = 0V - - ±100 nA Notes On Characteristics Symbol Parameters RDS(ON) Drain-Source On-Resistance Test Conditions VGS = 10V, ID = 30A Min Typ Max Units - 8.3 10 mΩ 14 18.5 mΩ 3 VGS = 4.5V, ID = 15A VGS(th) Gate-Source Threshold Voltage Notes VGS = VDS, ID =250µA 1.0 - 3.0 V 3 Units Notes Dynamic Characteristics Symbol Parameters Test Conditions Min Typ Max CISS Input Capacitance VGS =0V, - 830 - COSS Output Capacitance VDS =15V - 150 - CRSS Reverse Transfer Capacitance f=1MHz - 43 - pF Switching Characteristics Symbol Parameters Test Conditions Min Typ Max TD(ON) Turn-On Delay Time VDS = 15V , - 13.5 - TR Rise Time VGS = 10V, - 13 - TD(OFF) Turn-Off Delay Time RG = 3Ω, - 42 - TF Fall Time RL = 15Ω, - 4 - QG Total Gate Charge VDS = 15V , - 11 - QGS Gate-Source Charge VGS = 4.5V, - 5.4 - QGD Gate-Drain (Miller) Charge - 5.5 - CT Micro Proprietary & Confidential ID =25A Page 3 Units Notes ns nC Rev 3 Jun, 2015 CTH5003NS-T52 N-Channel Enhancement MOSFET Drain-Source Diode Characteristics Symbol Parameters Test Conditions Min Typ Max Units Notes VSD Body Diode Forward Voltage VGS = 0V, ISD = 20A - 0.87 1.5 V 1 ISD Body Diode Continuous Current - - 20 A 1 Note: 1. The power dissipation is limited by 150 ℃ junction temperature. 2. The data tested by pulsed , pulse width ≦ 300μs , duty cycle ≦ 2% 3. Thermal Resistance follow JESD51-3. CT Micro Proprietary & Confidential Page 4 Rev 3 Jun, 2015 CTH5003NS-T52 N-Channel Enhancement MOSFET Typical Characteristic Curves CT Micro Proprietary & Confidential Page 5 Rev 3 Jun, 2015 CTH5003NS-T52 N-Channel Enhancement MOSFET CT Micro Proprietary & Confidential Page 6 Rev 3 Jun, 2015 CTH5003NS-T52 N-Channel Enhancement MOSFET Test Circuits & Waveforms Figure 9: Gate Charge Test Circuit Figure 10: Gate Charge Waveform Figure 11: Switching Time Test Circuit Figure 12: Switching Time Waveform CT Micro Proprietary & Confidential Page 7 Rev 3 Jun, 2015 CTH5003NS-T52 N-Channel Enhancement MOSFET Package Dimension (TO-252) Dimensions in mm unless otherwise stated Recommended pad layout for surface mount leadform Dimensions in mm unless otherwise stated CT Micro Proprietary & Confidential Page 8 Rev 3 Jun, 2015 CTH5003NS-T52 N-Channel Enhancement MOSFET Marking Information ：Denotes “ CT Micro” CT H5003N ：Device Number ：Fiscal Year Y ：Work Week WW ：Production Code A CT H5003N YWWA Ordering Information Part Number Description Quantity CTH5003NS-T52 TO-252 Reel 2500 pcs CT Micro Proprietary & Confidential Page 9 Rev 3 Jun, 2015 CTH5003NS-T52 N-Channel Enhancement MOSFET Reflow Profile Profile Feature Pb-Free Assembly Profile Temperature Min. (Tsmin) 150°C Temperature Max. (Tsmax) 200°C Time (ts) from (Tsmin to Tsmax) 60-120 seconds Ramp-up Rate (tL to tP) 3°C/second max. Liquidous Temperature (TL) 217°C Time (tL) Maintained Above (TL) 60 – 150 seconds Peak Body Package Temperature 260°C +0°C / -5°C Time (tP) within 5°C of 260°C 30 seconds Ramp-down Rate (TP to TL) 6°C/second max Time 25°C to Peak Temperature 8 minutes max. CT Micro Proprietary & Confidential Page 10 Rev 3 Jun, 2015 CTH5003NS-T52 N-Channel Enhancement MOSFET DISCLAIMER CT MICRO RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. CT MICRO DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. ______________________________________________________________________________________ CT MICRO ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL OF CT MICRO INTERNATIONAL CORPORATION. 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical support device or system whose failure to perform implant into the body, or (b) support or sustain life, can be reasonably expected to cause the failure of or (c) whose failure to perform when properly used the life support device or system, or to affect its in accordance with instruction for use provided in safety or effectiveness. the labelling, can be reasonably expected to result in significant injury to the user. CT Micro Proprietary & Confidential Page 11 Rev 3 Jun, 2015