Richtek FDS6670AS 6a, 24v, 600khz step-down converter with synchronous gate driver Datasheet

®
RT8298
6A, 24V, 600kHz Step-Down Converter with Synchronous
Gate Driver
General Description
Features
The RT8298 is a synchronous step-down DC/DC converter
with an integrated high side internal power MOSFET and
a gate driver for a low side external power MOSFET. It
can deliver up to 6A output current from a 4.5V to 24V
input supply. The RT8298's current mode architecture
allows the transient response to be optimized over a wider
input voltage and load range. Cycle-by-cycle current limit
provides protection against shorted outputs and soft-start
eliminates input current surge during start-up. The RT8298
is synchronizable to an external clock with frequency
ranging from 300kHz to 1.5MHz.
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The RT8298 is available in WDFN-14L 4x3 and SOP-8
(Exposed Pad) packages.
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Applications
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4.5V to 24V Input Voltage Range
6A Output Current
45mΩ
Ω Internal High Side N-MOSFET
Current Mode Control
600kHz Switching Frequency
Adjustable Output from 0.8V to 15V
Up to 95% Efficiency
Internal Compensation
Stable with Ceramic Capacitors
Synchronous External Clock : 300kHz to 1.5MHz
Cycle-by-Cycle Current Limit
Input Under Voltage Lockout
Output Under Voltage Protection
Power Good Indicator
Thermal Shutdown Protection
RoHS Compliant and Halogen Free
Point of Load Regulator in Distributed Power System
Digital Set top Boxes
Personal Digital Recorders
Broadband Communications
Flat Panel TVs and Monitors
Simplified Application Circuit
VIN
VIN
RT8298
BOOT
CIN
CBOOT
L
SW
VCC
BG
PGOOD
R2
EN/SYNC
Copyright © 2011 Richtek Technology Corporation. All rights reserved.
November 2011
COUT
FB
Chip Enable
DS8298-01
Q1
R1
CVCC
Power Good
VOUT
GND
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RT8298
Ordering Information
Marking Information
RT8298
RT8298ZQW
Package Type
QW : WDFN-14L 4x3 (W-Type)
SP : SOP-8 (Exposed Pad-Option 2)
04 : Product Code
YMDNN : Date Code
04 YM
DNN
Lead Plating System
Z : ECO (Ecological Element with
Halogen Free and Pb free)
Note :
RT8298ZSP
Richtek products are :
`
RT8298ZSP : Product Number
RoHS compliant and compatible with the current requirements of IPC/JEDEC J-STD-020.
`
RT8298
ZSPYMDNN
YMDNN : Date Code
Suitable for use in SnPb or Pb-free soldering processes.
Pin Configurations
(TOP VIEW)
FB
PGOOD
EN/SYNC
VIN
VIN
VIN
NC
1
14
2
13
3
4
5
6
12
7
GND
15
11
10
9
8
GND
BG
VCC
BOOT
SW
SW
SW
WDFN-14L 4x3
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2
8
SW
BOOT
2
VCC
3
BG
4
GND
VIN
7
EN/SYNC
6
FB
5
GND
9
SOP-8 (Exposed Pad)
is a registered trademark of Richtek Technology Corporation.
DS8298-01
November 2011
RT8298
Functional Pin Description
Pin No.
WDFN-14L 4x3
1
SOP-8
(Exposed Pad)
6
Pin Name
FB
Pin Function
Feedback Input. This pin is connected to the converter output. It
is used to set the output of the converter to regulate to the
desired value via an external resistive divider. The feedback
reference voltage is 0.808V typically.
Power Good Indicator with Open Drain. (for RT8298ZQW only)
A 100kΩ pull-high resistor is needed. The output of this pin is
pulled to low when the FB is lower than 0.75V; otherwise it is
high impedance.
Enable or External Frequency Synchronization Input. A
logic-high (2V < EN < 5.5V) enables the converter; a logic-low
forces the IC into shutdown mode reducing the supply current to
less than 3μA. For external frequency synchronization operation,
the available frequency range is from 300kHz to 1.5MHz.
2
--
PGOOD
3
7
EN/SYNC
4, 5, 6
8
VIN
7
--
NC
8, 9, 10
1
SW
11
2
BOOT
12
3
VCC
BG Driver Bias Supply. Decouple with a 1μF X5R/X7R ceramic
capacitor between the VCC pin and GND.
13
4
BG
Gate Driver Output. Connect this pin to the gate of the external
low-side N-MOSFET.
14,
5,
GND
15 (Exposed Pad) 9 (Exposed Pad)
Copyright © 2011 Richtek Technology Corporation. All rights reserved.
DS8298-01
November 2011
Power Input. The available input voltage range is from 4.5V to
24V. A 22μF or larger input capacitor is needed to reduce
voltage spikes at the input.
No Internal Connection.
Switching Node. Output of the internal high side MOSFET.
Connect this pin to external low-side N-MOSFET, inductor and
bootstrap capacitor.
Bootstrap for High side Gate Driver. Connect a 1μF ceramic
capacitor between the BOOT pin and SW pin.
Ground. The exposed pad must be soldered to a large PCB and
connected to GND for maximum thermal dissipation.
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RT8298
Function Block Diagram
VIN
VCC
VCC
Internal
Regulator
OSC
Enable
Comparator
+
1.7V
EN/SYNC
-
-
5k
Slope
Current Sense
Compensator Amplifier
+
Foldback
Control
3V
RSENSE
VCC
OTP
BOOT
UV Comparator
VCC
0.4V
Switch
Controller
+
-
0.808V
15pF
FB
54pF
SW
Current
Signal
6nA
VSS
45m
+
+EA
-
+
COMP
-
Current
Comparator
BG
Driver
BG
300k
1pF
0.75V
PGOOD
Comparator
+
-
PGOOD
GND
Operation
The RT8298 is a synchronous high voltage Buck Converter
that can support the input voltage range from 4.5V to 24V
and the output current can be up to 6A. The RT8298 uses
a constant frequency, current mode architecture. In normal
operation, the high side N-MOSFET is turned on when
the Switch Controller is set by the oscillator (OSC) and is
turned off when the current comparator resets the Switch
Controller. While the N-MOSFET is turned off, the external
low side N-MOSFET is turned on by BG Driver with 5V
driving voltage from Internal Regulator (VCC) until next
cycle begins.
High side MOSFET peak current is measured by internal
RSENSE. The Current Signal is where Slope Compensator
works together with sensing voltage of RSENSE. The error
amplifier EA adjusts COMP voltage by comparing the
feedback signal (VFB) from the output voltage with the
internal 0.808V reference. When the load current
increases, it causes a drop in the feedback voltage relative
to the reference, the COMP voltage then rises to allow
higher inductor current to match the load current.
UV Comparator : If the feedback voltage (VFB) is lower
than threshold voltage 0.4V, the UV Comparator's output
will go high and the Switch Controller will turn off the high
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4
side MOSFET. The output under voltage protection is
designed to operate in Hiccup mode.
Oscillator (OSC) : The internal oscillator runs at nominal
frequency 600kHz and can be synchronized by an external
clock in the range between 300kHz and 1.5MHz from EN/
SYNC pin.
PGOOD Comparator : This function is available for
RT8298ZQW only. When the feedback voltage (VFB) is
higher than threshold voltage 0.75V, the PGOOD open
drain output will be high impedance.
Enable Comparator : Internal 5kΩ resistor and Zener diode
are used to clamp the input signal to 3V. A 1.7V reference
voltage is for EN logic-high threshold voltage. The EN pin
can be connected to VIN through a 100kΩ resistor for
automatic startup.
Foldback Control : When VFB is lower than 0.7V, the
oscillation frequency will be proportional to the feedback
voltage.
Soft-Start (SS) : An internal current source (6nA) charges
an internal capacitor (15pF) to build the soft-start ramp
voltage (VSS). The VFB voltage will track the internal ramp
voltage during soft-start interval. The typical soft-start time
is 2ms.
is a registered trademark of Richtek Technology Corporation.
DS8298-01
November 2011
RT8298
Absolute Maximum Ratings
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(Note 1)
Supply Input Voltage, VIN -----------------------------------------------------------------------------------------Switching Voltage, SW -------------------------------------------------------------------------------------------BOOT to SW --------------------------------------------------------------------------------------------------------All Other Voltage ---------------------------------------------------------------------------------------------------Power Dissipation, PD @ TA = 25°C
WDFN-14L 4x3 ------------------------------------------------------------------------------------------------------SOP-8 (Exposed Pad) --------------------------------------------------------------------------------------------Package Thermal Resistance (Note 2)
WDFN-14L 4x3, θJA ------------------------------------------------------------------------------------------------WDFN-14L 4x3, θJC ------------------------------------------------------------------------------------------------SOP-8 (Exposed Pad), θJA ---------------------------------------------------------------------------------------SOP-8 (Exposed Pad), θJC --------------------------------------------------------------------------------------Lead Temperature (Soldering, 10 sec.) ------------------------------------------------------------------------Junction Temperature ----------------------------------------------------------------------------------------------Storage Temperature Range -------------------------------------------------------------------------------------ESD Susceptibility (Note 3)
HBM (Human Body Mode) ---------------------------------------------------------------------------------------MM (Machine Mode) ------------------------------------------------------------------------------------------------
Recommended Operating Conditions
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–0.3V to 26V
–0.3V to (VIN + 0.3V)
–0.3V to 6V
−0.3V to 6V
1.667W
1.333W
60°C/W
7.5°C/W
75°C/W
15°C/W
260°C
150°C
–65°C to 150°C
2kV
200V
(Note 4)
Supply Input Voltage, VIN ------------------------------------------------------------------------------------------ 4.5V to 24V
Junction Temperature Range -------------------------------------------------------------------------------------- −40°C to 125°C
Ambient Temperature Range -------------------------------------------------------------------------------------- −40°C to 85°C
Electrical Characteristics
(VIN = 12V, TA = 25°C, unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Shutdown Supply Current
VEN = 0V
--
1
--
μA
Supply Current
VEN = 3V, VFB = 1V
--
0.9
--
mA
0.82
V
Feedback Reference Voltage
VREF
4.5V ≤ VIN ≤ 24V
Feedback Current
IFB
VFB = 0.8V
High-Side Switch On Resistance
RDS(ON)
BOOT − SW = 4.8V
High-Side Switch Current Limit
0.796 0.808
--
10
--
nA
--
45
--
mΩ
--
10
--
A
--
600
--
kHz
Oscillation Frequency
fOSC1
Short Circuit Oscillation Frequency
fOSC2
VFB = 0V
--
190
--
kHz
Maximum Duty Cycle
DMAX
VFB = 0.6V
--
90
--
%
Minimum On-Time
tON
VFB = 1V
--
100
--
ns
Input Under Voltage Lockout Threshold
VUVLO
4
4.2
4.4
V
Input Under Voltage Lockout Threshold
Hysteresis
ΔVUVLO
--
400
--
mV
Logic-High
VIH
2
--
5.5
Logic-Low
VIL
--
--
0.4
EN Threshold
Voltage
Copyright © 2011 Richtek Technology Corporation. All rights reserved.
DS8298-01
November 2011
V
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5
RT8298
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Sync Frequency Range
fSync
0.3
--
1.5
MHz
EN Turn-Off Delay
tOFF
--
10
--
μs
--
1
--
μA
EN Pull Low Current
VEN = 2V
Thermal Shutdown
TSD
--
150
--
°C
Thermal Shutdown Hysteresis
ΔTSD
--
20
--
°C
Power Good Threshold Rising
--
0.75
--
V
Power Good Threshold Hysteresis
--
40
--
mV
Power Good Pin Level
--
--
0.125
V
BG Driver Bias Supply Voltage
VCC
PGOOD Sink 10mA
4.5
5
--
V
Gate Driver Sink Impedance
RSink
--
0.9
--
Ω
Gate Driver Source Impedance
RSource
--
3.3
--
Ω
Note 1. Stresses beyond those listed “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the
operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions may affect
device reliability.
Note 2. θJA is measured at TA = 25°C on a high effective thermal conductivity four-layer test board per JEDEC 51-7. θJC is
measured at the exposed pad of the package.
Note 3. Devices are ESD sensitive. Handling precaution is recommended.
Note 4. The device is not guaranteed to function outside its operating conditions.
Copyright © 2011 Richtek Technology Corporation. All rights reserved.
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is a registered trademark of Richtek Technology Corporation.
DS8298-01
November 2011
RT8298
Typical Application Circuit
For WDFN-14L 4x3 Package
RT8298
4, 5, 6
VIN
4.5V to 24V
VIN
11
BOOT
CIN
22µF
CBOOT
1µF
8, 9, 10
SW
12 VCC
13
BG
L
2.2µH
VOUT
3.3V
Q1
CVCC
1µF
R1
62k
R3
100k
2
Power Good
Chip Enable
3
COUT
22µF x 3
1
FB
R2
20k
PGOOD
EN/SYNC
14, 15 (Exposed Pad)
GND
For SOP-8 (Exposed Pad) Package
RT8298
8
VIN
4.5V to 24V
VIN
BOOT
2
CIN
22µF
CBOOT
1µF
SW
3 VCC
BG
1
4
VOUT
3.3V
Q1
CVCC
1µF
R1
62k
FB
Chip Enable
L
2.2µH
7
EN/SYNC
GND
COUT
22µF x 3
6
R2
20k
5, 9 (Exposed Pad)
Table 1. Recommended Component Selection
V OUT (V)
R1 (kΩ)
R2 (kΩ)
L (μH)
COUT (μF)
1.2
62
127
1.5
22μF x 3
1.8
62
50.5
1.5
22μF x 3
2.5
62
30
2.2
22μF x 3
3.3
62
20
2.2
22μF x 3
5
93
18
2.8
22μF x 3
8
120
13.5
3.6
22μF x 3
Copyright © 2011 Richtek Technology Corporation. All rights reserved.
DS8298-01
November 2011
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RT8298
Typical Operating Characteristics
Output Voltage vs. Input Voltage
Efficiency vs. Output Current
3.33
100
90
3.32
VIN = 6V
VIN = 12V
VIN = 24V
70
60
Output Voltage (V)
Efficiency (%)
80
50
40
30
20
3.31
3.30
3.29
3.28
10
VIN = 4.5V to 24V, VOUT = 3.3V, IOUT = 0A
VOUT = 3.3V
3.27
0
0
1
2
3
4
5
4
6
6
8
10
Output Voltage vs. Temperature
16
18
20
22
24
Output Voltage vs. Output Current
3.40
3.40
3.38
3.38
3.36
3.36
Output Voltage (V)
Output Voltage (V)
14
Input Voltage (V)
Output Current (A)
3.34
3.32
3.30
3.28
3.26
3.24
3.34
3.32
3.30
3.28
VIN = 6V
VIN = 12V
VIN = 24V
3.26
3.24
3.22
3.22
VIN = 12V, VOUT = 3.3V, IOUT = 0A
3.20
VOUT = 3.3V
3.20
-50
-25
0
25
50
75
100
125
0
0.5
1
1.5
Temperature (°C)
2.5
3
3.5
4
4.5
5
5.5
6
Switching Frequency vs. Temperature
650
640
640
Switching Frequency (kHz)1
650
630
620
610
600
590
580
570
560
2
Output Current (A)
Switching Frequency vs. Input Voltage
Switching Frequency (kHz)1
12
630
620
610
600
590
580
570
560
VOUT = 3.3V, IOUT = 0A
VIN = 12V, VOUT = 3.3V, IOUT = 0A
550
550
4
6
8
10
12
14
16
18
20
22
Input Voltage (V)
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8
24
-50
-25
0
25
50
75
100
125
Temperature (°C)
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DS8298-01
November 2011
RT8298
Current Limit vs. Temperature
Load Transient Response
12.0
Current Limit (A)
11.5
VOUT
(100mV/Div)
11.0
10.5
10.0
9.5
IOUT
(5A/Div)
9.0
8.5
VIN = 12V, VOUT = 3.3V, IOUT = 0A to 6A
VIN = 12V, VOUT = 3.3V
8.0
-50
-25
0
25
50
75
100
Time (250μs/Div)
125
Temperature (°C)
Load Transient Response
Output Ripple Voltage
VOUT
(10mV/Div)
VOUT
(100mV/Div)
VSW
(10V/Div)
IOUT
(5A/Div)
VIN = 12V, VOUT = 3.3V, IOUT = 3A to 6A
IL
(2A/Div)
VIN = 12V, VOUT = 3.3V, IOUT = 3A
Time (250μs/Div)
Time (1μs/Div)
Output Ripple Voltage
Power On from VIN
VOUT
(10mV/Div)
VIN
(5V/Div)
VSW
(10V/Div)
VOUT
(2V/Div)
IL
(5A/Div)
VIN = 12V, VOUT = 3.3V, IOUT = 6A
Time (1μs/Div)
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DS8298-01
November 2011
IL
(5A/Div)
VIN = 12V, VOUT = 3.3V, IOUT = 6A
Time (2.5ms/Div)
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RT8298
Power On from EN
Power Off from VIN
VIN
(5V/Div)
VEN
(5V/Div)
VOUT
(2V/Div)
VOUT
(2V/Div)
IL
(5A/Div)
IL
(5A/Div)
VIN = 12V, VOUT = 3.3V, IOUT = 6A
VIN = 12V, VOUT = 3.3V, IOUT = 6A
Time (5ms/Div)
Time (2.5ms/Div)
Power Off from EN
External SYNC
Clock
(5V/Div)
VEN
(5V/Div)
VLX
(10V/Div)
VOUT
(2V/Div)
IL
(5A/Div)
VOUT
(5V/Div)
IL
(5A/Div)
VIN = 12V, VOUT = 3.3V, IOUT = 6A
Time (5ms/Div)
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VIN = 12V, VOUT = 3.3V, IOUT = 6A, Clock = 800kHz
Time (500ns/Div)
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DS8298-01
November 2011
RT8298
Application Information
Output Voltage Setting
the device again. For external timing control, the EN pin
can also be externally pulled high by adding a REN resistor
and CEN capacitor from the VIN pin (see Figure 3).
The resistive divider allows the FB pin to sense the output
voltage as shown in Figure 1.
EN
VIN
VOUT
REN
EN
RT8298
CEN
R1
GND
FB
RT8298
R2
Figure 3. Enable Timing Control
GND
Figure 1. Output Voltage Setting
The output voltage is set by an external resistive voltage
divider according to the following equation :
VOUT = VREF ⎛⎜ 1+ R1 ⎞⎟
⎝ R2 ⎠
Where VREF is the feedback reference voltage (0.808V
typ.).
An external MOSFET can be added to implement digital
control on the EN pin, as shown in Figure 4. In this case,
a 100kΩ pull-up resistor, REN, is connected between VIN
pin and the EN pin. MOSFET Q2 will be under logic control
to pull down the EN pin.
VIN
REN
100k
EN
External Bootstrap Diode
GND
Connect a 1μF low ESR ceramic capacitor between the
BOOT pin and SW pin. This capacitor provides the gate
driver voltage for the high side MOSFET.
It is recommended to add an external bootstrap diode
between an external 5V and BOOT pin for efficiency
improvement when input voltage is lower than 5.5V or duty
ratio is higher than 65% .The bootstrap diode can be a
low cost one such as IN4148 or BAT54. The external 5V
can be a 5V fixed input from system or a 5V output of the
RT8298. Note that the external boot voltage must be lower
than 5.5V.
5V
Figure 4. Digital Enable Control Circuit
The chip starts to operate when VIN rises to 4.2V (UVLO
threshold). During the VIN rising period, if an 8V output
voltage is set, VIN is lower than the VOUT target value and
it may cause the chip to shut down. To prevent this
situation, a resistive voltage divider can be placed between
the input voltage and ground and connected to the EN pin
to adjust enable threshold, as shown in Figure 5. For
example, the setting VOUT is 8V and VIN is from 0V to
12V, when VIN is higher than 10V, the chip is triggered to
enable the converter. Assume REN1 = 50kΩ. Then,
REN2 =
BOOT
RT8298
1µF
SW
Figure 2. External Bootstrap Diode
Chip Enable Operation
The EN pin is the chip enable input. Pulling the EN pin
low (<0.4V) will shutdown the device. During shutdown
mode, the RT8298 quiescent current drops to lower than
3μA. Driving the EN pin high (2V < EN < 5.5V) will turn on
Copyright © 2011 Richtek Technology Corporation. All rights reserved.
DS8298-01
November 2011
RT8298
Q2
EN
(REN1 x VEN_T )
(VIN_S − VEN_T )
where VEN_T is the enable comparator's logic-high reference
threshold voltage (1.7V) and VIN_S is the target turn on
input voltage (10V in this example). According to the
equation, the suggested resistor R EN2 is 10.2kΩ.
VIN
REN1
EN
REN2
RT8298
GND
Figure 5. Resistor Divider for Lockout Threshold Setting
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11
RT8298
Soft-Start
Over Temperature Protection
The RT8298 provides soft-start function. The soft-start
function is used to prevent large inrush current while
converter is being powered-up. An internal current source
(6nA) charges an internal capacitor (15pF) to build a softstart ramp voltage. The VFB voltage will track the internal
ramp voltage during soft-start interval. The typical softstart time is calculated as follows :
The RT8298 features an Over Temperature Protection
(OTP) circuitry to prevent from overheating due to
excessive power dissipation. The OTP will shut down
switching operation when junction temperature exceeds
150°C. Once the junction temperature cools down by
approximately 20°C, the converter will resume operation.
To maintain continuous operation, the maximum junction
temperature should be lower than 125°C.
t SS =
(0.808V × 15pF)
= 2ms
6nA
Under Voltage Protection
Operating Frequency and Synchronization
The internal oscillator runs at 600kHz (typ.) when the EN/
SYNC pin is at logic-high level (>2V). If the EN pin is
pulled to low-level for 10μs above, the IC will shut down.
The RT8298 can be synchronized with an external clock
ranging from 300kHz to 1.5MHz applied to the EN/SYNC
pin. The external clock duty cycle must be from 10% to
90%.
3.5ms (Start-up period)
For the RT8298, it provides Hiccup Mode Under Voltage
Protection (UVP). When the VFB voltage drops below 0.4V,
the UVP function will be triggered to shut down switching
operation. If the UV condition remains for a period, the
RT8298 will retry every 2ms. When the UV condition is
removed, the converter will resume operation. The UVP
is disabled during soft-start period.
Hiccup Mode
10µs
VIN = 12V, IOUT = Short
EN/SYNC
VOUT
(1V/Div)
VFB
CLK
Foldback
External CLK
600kHz
IL
(5A/Div)
Figure 6. Startup Sequence Using External Sync Clock
Figure 6 shows the synchronization operation in startup
period. When the EN/SYNC is triggered by an external
clock, the RT8298 enters soft-start phase and the output
voltage starts to rise. When VFB is lower than 0.7V, the
oscillation frequency will be proportional to the feedback
voltage. With higher VFB, the switching frequency is
relatively higher. After startup period about 3.5ms, the IC
operates with the same frequency as the external clock.
Time (2.5ms/Div)
Figure 7. Hiccup Mode Under Voltage Protection
Duty Cycle Limitation
The RT8298 has a maximum duty cycle 90%. The
minimum input voltage is determined by the maximum
duty cycle and its minimum operating voltage 4.5V. The
voltage drops of high side MOSFET and low side MOSFET
also must be considered for the minimum input voltage.
The minimum duty cycle can be calculated by the following
equation :
Duty Cycle(min) = fSW x tON(min)
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is a registered trademark of Richtek Technology Corporation.
DS8298-01
November 2011
RT8298
where fsw is the switching frequency, tON (min) is the
minimum switch on time (100ns). This equation shows
that the minimum duty cycle increases when the switching
frequency is increased. Therefore, slower switching
frequency is necessary to achieve high VIN/VOUT ratio
application.
For the ripple current selection, the value of ΔIL = 0.24(IMAX)
will be a reasonable starting point. The largest ripple
current occurs at the highest VIN. To guarantee that the
ripple current stays below the specified maximum, the
inductor value should be chosen according to the following
equation :
External N-MOSFET Selection
⎡ VOUT ⎤ ⎡
VOUT ⎤
L =⎢
⎥ × ⎢1 − VIN(MAX) ⎥
f
I
×
Δ
L(MAX)
⎣
⎦ ⎣
⎦
The RT8298 is designed to operate using an external low
side N-MOSFET. Important parameters for the power
MOSFETs are the breakdown voltage (BVDSS), threshold
voltage (VGS_TH), on-resistance (RDS(ON)), total gate charge
(Qg) and maximum current (ID(MAX)). The gate driver voltage
is from internal regulator (5V, VCC). Therefore logic level
N-MOSFET must be used in the RT8298 application. The
total gate charge (Qg) must be less than 50nC, lower Qg
characteristics results in lower power losses. Drain-source
on-resistance (RDS(ON)) should be as small as possible,
less than 30mΩ is desirable. Lower RDS(ON) results in
higher efficiency.
Table 2. External N-MOSFET Selection
Part No.
Manufacture
Si7114
Vishay
A04474
ALPHA & OMEGA
FDS6670AS
Fairchild
IRF7821
International Rectifier
Inductor Selection
The inductor value and operating frequency determine the
ripple current according to a specific input and output
voltage. The ripple current ΔIL increases with higher VIN
and decreases with higher inductance.
V
V
ΔIL = ⎡⎢ OUT ⎤⎥ × ⎡⎢1− OUT ⎤⎥
VIN ⎦
⎣ f ×L ⎦ ⎣
Having a lower ripple current reduces not only the ESR
losses in the output capacitors but also the output voltage
ripple. High frequency with small ripple current can reduce
voltage. For the highest efficiency operation, however, it
requires a large inductor to achieve this goal.
Copyright © 2011 Richtek Technology Corporation. All rights reserved.
DS8298-01
November 2011
The inductor's current rating (cause a 40°C temperature
rising from 25°C ambient) should be greater than the
maximum load current and its saturation current should
be greater than the short circuit peak current limit. Please
see Table 3 for the inductor selection reference.
Table 3. Suggested Inductors for Typical
Application Circuit
Component
Dimensions
Series
Supplier
(mm)
10 x 10 x 4
Zenithtek
ZPWM
6x6x3
WE
TAIYOYUDEN
74477
NR8040
10 x 10 x 4
8 x 10 x 4
CIN and COUT Selection
The input capacitance, C IN, is needed to filter the
trapezoidal current at the source of the high side MOSFET.
To prevent large ripple current, a low ESR input capacitor
sized for the maximum RMS current should be used. The
approximate RMS current equation is given :
V
IRMS = IOUT(MAX) OUT
VIN
VIN
−1
VOUT
This formula has a maximum at VIN = 2VOUT, where
IRMS = IOUT / 2. This simple worst case condition is
commonly used for design because even significant
deviations do not offer much relief.
Choose a capacitor rated at a higher temperature than
required. Several capacitors may also be paralleled to
meet size or height requirements in the design.
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RT8298
Table 4. Suggested Capacitors for CIN and COUT
Location
Component Supplier
Part No.
Capacitance (μF)
Case Size
CIN
MURATA
GRM31CR61E106K
10
1206
CIN
TDK
C3225X5R1E106K
10
1206
CIN
TAIYO YUDEN
TMK316BJ106ML
10
1206
COUT
MURATA
GRM31CR60J476M
47
1206
COUT
TDK
C3225X5R0J476M
47
1210
COUT
MURATA
GRM32ER71C226M
22
1210
COUT
TDK
C3225X5R1C22M
22
1210
For the input capacitor, two 10μF low ESR ceramic
capacitors are recommended. For the recommended
capacitor, please refer to Table 4 for more details.
The selection of COUT is determined by the required ESR
to minimize voltage ripple.
Moreover, the amount of bulk capacitance is also a key
for COUT selection to ensure that the control loop is stable.
Loop stability can be checked by viewing the load transient
response as described in a later section.
The output ripple, ΔVOUT , is determined by :
1
⎤
ΔVOUT ≤ ΔIL ⎡⎢ESR +
8fCOUT ⎥⎦
⎣
The output ripple will be the highest at the maximum input
voltage since ΔIL increases with input voltage. Multiple
capacitors placed in parallel may be needed to meet the
ESR and RMS current handling requirement.
Higher values, lower cost ceramic capacitors are now
becoming available in smaller case sizes. Their high ripple
current, high voltage rating and low ESR make them ideal
for switching regulator applications. When a ceramic
capacitor is used at the input and the power is supplied
by a wall adapter through long wires, a load step at the
output can induce ringing at the input, VIN. This ringing
can couple to the output and be mistaken. A sudden inrush
of current through the long wires can potentially cause a
voltage spike at VIN large enough to damage the part.
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Checking Transient Response
The regulator loop response can be checked by looking
at the load transient response. Switching regulators take
several cycles to respond to a step load change. When a
step load occurs, VOUT immediately shifts by an amount
equal to ΔILOAD x ESR also begins to charge or discharge
COUT generating a feedback error signal for the regulator
to return VOUT to its steady-state value. During this
recovery time, VOUT can be monitored for overshoot or
ringing that would indicate a stability problem.
Thermal Considerations
For continuous operation, do not exceed absolute
maximum junction temperature. The maximum power
dissipation depends on the thermal resistance of the IC
package, PCB layout, rate of surrounding airflow, and
difference between junction and ambient temperature. The
maximum power dissipation can be calculated by the
following formula :
PD(MAX) = (TJ(MAX) − TA) / θJA
where TJ(MAX) is the maximum junction temperature, TA is
the ambient temperature, and θJA is the junction to ambient
thermal resistance.
For recommended operating condition specifications of
the RT8298, the maximum junction temperature is 125°C.
The junction to ambient thermal resistance, θJA, is layout
dependent. For SOP-8 (Exposed Pad) package, the
thermal resistance, θJA, is 75°C/W on a standard JEDEC
51-7 four-layer thermal test board.
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DS8298-01
November 2011
RT8298
For WDFN-14L 4x3 package, the thermal resistance, θJA,
is 60°C/W on a standard JEDEC 51-7 four-layer thermal
test board. The maximum power dissipation at TA = 25°C
can be calculated by the following formulas :
PD(MAX) = (125°C − 25°C) / (75°C/W) = 1.333W for
SOP-8 (Exposed Pad) package
PD(MAX) = (125°C − 25°C) / (60°C/W) = 1.667W for
WDFN-14L 4x3 package
The maximum power dissipation depends on the operating
ambient temperature for fixed T J(MAX) and thermal
resistance, θJA. For the RT8298 package, the derating
curves in Figure 8 allow the designer to see the effect of
rising ambient temperature on the maximum power
dissipation.
Maximum Power Dissipation (W)1
1.8
Four-Layer PCB
Layout Consideration
Follow the PCB layout guidelines for optimal performance
of the RT8298.
`
Keep the traces of the main current paths as short and
wide as possible.
`
Put the input capacitor as close as possible to the device
pins (VIN and GND).
`
SW node is with high frequency voltage swing and
should be kept at small area. Keep analog components
away from the SW node to prevent stray capacitive noise
pick-up.
`
Connect feedback network behind the output capacitors.
Keep the loop area small. Place the feedback
components near the RT8298.
`
Connect all analog grounds to a common node and then
connect the common node to the power ground behind
the output capacitors.
`
An example of PCB layout guide is shown in Figure 9
and Figure 10 for reference.
1.6
1.4
1.2
WDFN-14L 4x3
1.0
0.8
SOP-8 (Exposed Pad)
0.6
0.4
0.2
0.0
0
25
50
75
100
125
Ambient Temperature (°C)
Figure 8. Derating Curves for RT8298 Package
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November 2011
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RT8298
SW should be connected to inductor by
wide and short trace. Keep sensitive
components away from this trace.
GND
COUT
VOUT
Q1
L
CBOOT
CVCC capacitor must
be placed as close to
the IC as possible.
Input capacitor must be placed
as close to the IC as possible.
VIN
8
SW
BOOT
2
VCC
3
BG
4
CVCC
The EN/SYNC must be kept
away from noise. The trace
should be short and shielded
with a ground trace.
CIN
BG
GND
VIN
7
EN/SYNC GND
6
FB
5
GND
9
R1 VOUT
R2
The feedback components
must be connected as close
to the device as possible.
GND
Figure 9. PCB Layout Guide for SOP-8 (Exposed Pad)
The feedback components
must be connected as close
to the device as possible.
GND
R2
VOUT
VCC
R1
FB
1
14
PGOOD
GND EN/SYNC
2
13
3
12
VIN
VIN
VIN
NC
4
R3
The EN/SYNC must be kept
away from noise. The trace
should be short and shielded
with a ground trace.
VIN
CIN
GND
5
11
10
6
9
15
7
8
GND
BG
VCC
BOOT
SW
SW
SW
Q1
Input capacitor must be
placed as close to the
IC as possible.
CVCC capacitor must
be placed as close to
the IC as possible.
CVCC
CBOOT
L
BG
VOUT
SW should be connected
to inductor by wide and
short trace. Keep sensitive
components away from
this trace.
COUT
GND
Figure 10. PCB Layout Guide for WDFN-14L 4x3
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is a registered trademark of Richtek Technology Corporation.
DS8298-01
November 2011
RT8298
Outline Dimension
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
Min
Max
A
0.700
0.800
0.028
0.031
A1
0.000
0.050
0.000
0.002
A3
0.175
0.250
0.007
0.010
b
0.180
0.300
0.007
0.012
D
3.900
4.100
0.154
0.161
D2
3.250
3.350
0.128
0.132
E
2.900
3.100
0.114
0.122
E2
1.650
1.750
0.065
0.069
e
L
0.500
0.350
0.020
0.450
0.014
0.018
W-Type 14L DFN 4x3 Package
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November 2011
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RT8298
H
A
M
EXPOSED THERMAL PAD
(Bottom of Package)
Y
J
X
B
F
C
I
D
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
Min
Max
A
4.801
5.004
0.189
0.197
B
3.810
4.000
0.150
0.157
C
1.346
1.753
0.053
0.069
D
0.330
0.510
0.013
0.020
F
1.194
1.346
0.047
0.053
H
0.170
0.254
0.007
0.010
I
0.000
0.152
0.000
0.006
J
5.791
6.200
0.228
0.244
M
0.406
1.270
0.016
0.050
X
2.000
2.300
0.079
0.091
Y
2.000
2.300
0.079
0.091
X
2.100
2.500
0.083
0.098
Y
3.000
3.500
0.118
0.138
Option 1
Option 2
8-Lead SOP (Exposed Pad) Plastic Package
Richtek Technology Corporation
5F, No. 20, Taiyuen Street, Chupei City
Hsinchu, Taiwan, R.O.C.
Tel: (8863)5526789
Richtek products are sold by description only. Richtek reserves the right to change the circuitry and/or specifications without notice at any time. Customers should
obtain the latest relevant information and data sheets before placing orders and should verify that such information is current and complete. Richtek cannot
assume responsibility for use of any circuitry other than circuitry entirely embodied in a Richtek product. Information furnished by Richtek is believed to be
accurate and reliable. However, no responsibility is assumed by Richtek or its subsidiaries for its use; nor for any infringements of patents or other rights of third
parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Richtek or its subsidiaries.
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DS8298-01
November 2011
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