FDP100N10 N-Channel PowerTrench® MOSFET 100V, 75A, 10mΩ Features Description • RDS(on) = 8.2mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. • Fast switching speed • Low gate charge • High performance trench technology for extremely low RDS(on) • High power and current handing capability • RoHS compliant Applications • DC to DC converters / Synchronous Rectification D G G D S TO-220 FDP Series S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage ID Drain Current - Continuous (TC = 75oC) IDM Drain Current - Pulsed Ratings 100 Units V ±20 V 75 A (Note 1) 300 A EAS Single Pulsed Avalanche Energy (Note 2) 365 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 6 V/ns PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL (TC = 25oC) - Derate above 25oC 208 W 1.4 W/oC -55 to +175 oC 300 oC Ratings Units Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction to Case 0.72 RθCS Thermal Resistance, Case to Sink Typ. 0.5 RθJA Thermal Resistance, Junction to Ambient 62.5 ©2012 Fairchild Semiconductor Corporation FDP100N10 Rev. C1 1 o C/W www.fairchildsemi.com FDP100N10 N-Channel PowerTrench® MOSFET March 2012 Device Marking FDP100N10 Device FDP100N10 Package TO-220AB Reel Size Tube Tape Width N/A Quantity 50 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units ID = 250μA, VGS = 0V, TJ = 25oC 100 - - V ID = 250μA, Referenced to 25oC - 0.1 - V/oC Off Characteristics BVDSS ΔBVDSS / ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current VDS = 100V, VGS = 0V - - 1 VDS = 100V, VGS = 0V, TJ = 150oC - - 500 VGS = ±20V, VDS = 0V - - ±100 2.5 - 4.5 V - 8.2 10 mΩ - 110 - S μA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250μA Static Drain to Source On Resistance VGS = 10V, ID = 75A gFS Forward Transconductance VDS = 10V, ID = 37.5A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 25V, VGS = 0V f = 1MHz VDS = 50V, ID = 75A VGS = 10V (Note 4, 5) - 5500 7300 pF - 530 710 pF - 220 325 pF - 76 100 nC - 30 - nC - 20 - nC Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 50V, ID = 75A VGS = 10V, RGEN = 25Ω (Note 4, 5) - 70 150 ns - 265 540 ns - 125 260 ns - 115 240 ns Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 75 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 300 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 75A - - 1.25 V trr Reverse Recovery Time - 71 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 75A dIF/dt = 100A/μs - 164 - nC (Note 4) Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature 2: L = 0.13mH, IAS = 75A, VDD = 25V, RG = 25Ω, Starting TJ = 25oC 3: ISD ≤ 75A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25oC 4: Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5: Essentially Independent of Operating Temperature Typical Characteristics FDP100N10 Rev. C1 2 www.fairchildsemi.com FDP100N10 N-Channel PowerTrench® MOSFET Package Marking and Ordering Information TC = 25oC unless otherwise noted Figure 1. On-Region Characteristics VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 100 ID,Drain Current[A] ID,Drain Current[A] 500 Figure 2. Transfer Characteristics 1000 10 100 o 150 C o -55 C o 25 C 10 *Notes: 1. 250μs Pulse Test *Notes: 1. VDS = 20V 2. 250μs Pulse Test o 2. TC = 25 C 5 0.1 1 1 VDS,Drain-Source Voltage[V] 5 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 4 6 8 10 VGS,Gate-Source Voltage[V] 1000 IS, Reverse Drain Current [A] 0.015 VGS = 10V 0.010 VGS = 20V 0.005 100 o 150 C o 25 C 10 *Notes: 1. VGS = 0V o 0.000 *Note: TJ = 25 C 0 50 100 150 200 250 ID, Drain Current [A] 300 1 0.2 350 2. 250μs Pulse Test 0.4 0.6 0.8 1.0 1.2 VSD, Body Diode Forward Voltage [V] 1.4 Figure 6. Gate Charge Characteristics 8000 10 6000 Ciss *Note: 1. VGS = 0V 2. f = 1MHz 4000 Coss 2000 0 0.1 FDP100N10 Rev. C1 Crss 1 10 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 5. Capacitance Characteristics Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Capacitances [pF] 12 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.020 RDS(ON) [Ω], Drain-Source On-Resistance 2 8 6 4 2 0 30 3 VDS = 80V VDS = 50V VDS = 25V *Note: ID = 75A 0 15 30 45 60 75 Qg, Total Gate Charge [nC] 90 www.fairchildsemi.com FDP100N10 N-Channel PowerTrench® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 250μA 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 2.5 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 2.0 1.5 1.0 0.0 -100 200 500 100 100 80 100 μs 10 THIS AREA IS LIMITED BY rDS(on) SINGLE PULSE TJ = MAX RATED 1 ms Tc = 25 oC 0.1 0.1 1 10 100 200 60 40 20 10 ms 100 ms DC RθJc = 0.72 oC/W -50 0 50 100 150 o TJ, Junction Temperature [ C] Figure 10. Maximum Drain Current vs. Case Temperature ID, Drain Current [A] ID, DRAIN CURRENT (A) Figure 9. Maximum Safe Operating Area 1 *Notes: 1. VGS = 10V 2. ID = 75A 0.5 0 25 400 50 VDS, DRAIN to SOURCE VOLTAGE (V) 75 100 125 150 o TC, Case Temperature [ C] 175 Figure 11. Transient Thermal Response Curve Thermal Response [ZθJC] 1 0.5 0.1 0.2 0.1 t1 0.02 0.01 0.01 t2 *Notes: Single pulse 1E-3 -5 10 FDP100N10 Rev. C1 PDM 0.05 o 1. ZθJC(t) = 0.72 C/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t) -4 10 -3 -2 10 10 Rectangular Pulse Duration [sec] 4 -1 10 0 10 www.fairchildsemi.com FDP100N10 N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) FDP100N10 N-Channel PowerTrench® MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDP100N10 Rev. C1 5 www.fairchildsemi.com FDP100N10 N-Channel PowerTrench® MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VDD VSD Body Diode Forward Voltage Drop FDP100N10 Rev. C1 6 www.fairchildsemi.com FDP100N10 N-Channel PowerTrench® MOSFET Mechanical Dimensions TO-220 FDP100N10 Rev. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I61 FDP100N10 Rev. C1 8 www.fairchildsemi.com FDP100N10 N-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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