DMC3025LSD 30V COMPLEMENTARY ENHANCEMENT MODE MOSFET ADVANCED INFORMATION Product Summary Device V(BR)DSS N-Channel 30V P-Channel -30V Features RDS(ON) max Package ID MAX TA = +25°C SO-8 8.5A 7.0A -5.5A -4.1A 20mΩ @ VGS = 10V 32mΩ @ VGS = 4.5V 45mΩ @ VGS = -10V 85mΩ @ VGS = -4.5V • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description Mechanical Data This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it • • ideal for high-efficiency power management applications. • • • Applications • • DC Motor Control DC-AC Inverters • Case: SO-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed Over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (Approximate) D1 D2 SO-8 S2 D2 G2 D2 S1 D1 G1 D1 G1 G2 Top View S1 S2 Q2 N-CHANNEL MOSFET Pin Configuration Q1 P-CHANNEL MOSFET Equivalent Circuit Ordering Information (Note 4) Part Number DMC3025LSD-13 Notes: Case SO-8 Packaging 2,500/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html Marking Information Top View 8 5 Logo C3025LD Part no. YY WW Xth week: 01 ~ 53 Year: “11” = 2011 1 DMC3025LSD Document number: DS35717 Rev. 7 - 2 4 1 of 10 www.diodes.com February 2015 © Diodes Incorporated DMC3025LSD Maximum Ratings N-CHANNEL– Q2 (@TA = +25°C, unless otherwise specified.) Characteristic ADVANCED INFORMATION Symbol Value Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 5) VGS = 10V Continuous Drain Current (Note 5) VGS = 4.5V Units Steady State TA = +25°C TA = +70°C ID 6.5 5.1 A t<10s TA = +25°C TA = +70°C ID 8.5 6.8 A Steady State TA = +25°C TA = +70°C ID 5.3 4.1 A t<10s TA = +25°C TA = +70°C ID 7.0 5.5 A IS 2 A Pulsed Drain Current (10µs pulse, duty cycle = 1%) IDM 60 A Pulsed Body Diode Current (10µs pulse, duty cycle = 1%) ISM 60 A Avalanche Current (Note 7) L = 0.1mH IAS 14 A Avalanche Energy (Note 7) L = 0.1mH EAS 10 mJ Symbol Value Units VDSS -30 V Maximum Continuous Body Diode Forward Current (Note 5) Maximum Ratings P-CHANNEL– Q1 (@TA = +25°C, unless otherwise specified.) Characteristic Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = -10V Continuous Drain Current (Note 5) VGS = -4.5V VGSS ±20 V Steady State TA = +25°C TA = +70°C ID -4.2 -3.2 A t<10s TA = +25°C TA = +70°C ID -5.5 -4.3 A Steady State TA = +25°C TA = +70°C ID -3.5 -2.3 A t<10s TA = +25°C TA = +70°C ID -4.1 -3.2 A IS -2 A Maximum Continuous Body Diode Forward Current (Note 5) Pulsed Drain Current (10µs pulse, duty cycle = 1%) IDM -30 A Pulsed Body Diode Current (10µs pulse, duty cycle = 1%) ISM -30 A Avalanche Current (Note 7) L = 0.1mH IAS -14 A EAS 10 mJ Value Units Avalanche Energy (Note 7) L = 0.1mH Thermal Characteristics Characteristic Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Symbol TA = +25°C TA = +70°C Steady State t<10s TA = +25°C TA = +70°C Steady State t<10s Thermal Resistance, Junction to Case (Note 5) Operating and Storage Temperature Range Notes: PD RθJA PD 1.2 0.77 104 62 1.5 0.95 RθJA 83 49 RθJC 15 TJ, TSTG -55 to +150 W °C/W W °C/W °C 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. DMC3025LSD Document number: DS35717 Rev. 7 - 2 2 of 10 www.diodes.com February 2015 © Diodes Incorporated DMC3025LSD Electrical Characteristics N-CHANNEL– Q2 (@TA = +25°C, unless otherwise specified.) ADVANCED INFORMATION Characteristic OFF CHARACTERISTICS (Note 8) Symbol Min Typ Max Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Source Leakage Unit Test Condition 30 — — V VGS = 0V, ID = 250µA — — 1 µA VDS = 30V, VGS = 0V IGSS — — ±1 µA VGS = ±20V, VDS = 0V VGS(th) 1.0 — 2.0 V — 15 20 — 23 32 ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Static Drain-Source On-Resistance RDS (ON) mΩ VDS = VGS, ID = 250µA VGS = 10V, ID = 7.4A VGS = 4.5V, ID = 6A Forward Transfer Admittance |Yfs| — 8 — S VDS = 5V, ID = 10A Diode Forward Voltage VSD — 0.70 1.2 V VGS = 0V, IS = 1A pF VDS = 15V, VGS = 0V, f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1.0MHz nC VDS = 15V, ID = 10A ns VDD = 15V, VGS = 10V, RG = 6Ω, ID = 1A DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Ciss — 501 — Output Capacitance Coss — 72 — Reverse Transfer Capacitance Crss — 57 — Gate Resistance Rg — 1.84 — Total Gate Charge (VGS = 4.5V) Qg — 4.6 — Total Gate Charge (VGS = 10V) Qg — 9.8 — Gate-Source Charge Qgs — 1.6 — Gate-Drain Charge Qgd — 2.0 — Turn-On Delay Time tD(on) — 3.9 — Turn-On Rise Time tr — 4.2 — Turn-Off Delay Time tD(off) — 16.6 — Turn-Off Fall Time tf — 5.8 — Reverse Recovery Time trr — 5.5 — ns Reverse Recovery Charge Qrr — 2.6 — nC DMC3025LSD 3 of 10 www.diodes.com Document number: DS35717 Rev. 7 - 2 IF = 12A, di/dt = 500A/µs February 2015 © Diodes Incorporated DMC3025LSD Electrical Characteristics P-CHANNEL – Q1 (@TA = +25°C, unless otherwise specified.) Symbol Min Typ Max Unit Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage BVDSS IDSS IGSS -30 — — — — — — -1 ±100 V µA nA VGS = 0V, ID = -250µA VDS = -30V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) RDS (ON) -2.0 45 85 — -1.2 V Static Drain-Source On-Resistance — 38 65 5 -0.7 VDS = VGS, ID = -250µA VGS = -10V, ID = -5.2A VGS = -4.5V, ID = -4A VDS = -5V, ID = -5.2A VGS = 0V, IS = -1A ADVANCED INFORMATION Characteristic OFF CHARACTERISTICS (Note 8) Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) |Yfs| VSD -1.0 — — — — Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Ciss Coss Crss Rg — — — — 590 69 53 11 — — — — pF pF pF Ω Total Gate Charge (VGS = 4.5V) Qg — 5.1 — nC Total Gate Charge (VGS = 10V) Qg — 10.5 — nC Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Qgs Qgd — — — — — — — — 1.8 1.9 6.8 4.9 28.4 12.4 14 11 — — — — — — — — nC nC ns ns ns ns ns nC Notes: tD(on) tr tD(off) tf trr Qrr mΩ S V Test Condition VDS = -25V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1.0MHz VDS = -15V, ID = -6A VDD = -15V, VGS = -10V, RG = 6Ω, ID = -1A IF = 12A, di/dt = 500A/µs 7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMC3025LSD Document number: DS35717 Rev. 7 - 2 4 of 10 www.diodes.com February 2015 © Diodes Incorporated DMC3025LSD 30 25 25 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 30 20 15 10 VDS = 5.0V 20 15 10 TA = 150°C T A = 125°C 5 5 TA = 85°C TA = 25°C 0 0.5 1.0 1.5 2.0 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic 3.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.030 0.025 VGS = 4.5V 0.020 0.015 VGS = 10V 0.010 0.005 0 0 5 10 15 ID, DRAIN-SOURCE CURRENT (A) Figure. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0 T A = -55°C 0 1 2 3 4 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristics 5 0.10 0.08 0.06 0.04 ID = 10A 0.02 20 0 3 4 5 6 7 8 9 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical On-Resistance vs. Drain Current and Gate Voltage 10 1.6 0.08 VGS = 4.5V 0.07 0.06 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) ADVANCED INFORMATION N-CHANNEL TA = 150°C 0.05 TA = 125°C 0.04 TA = 85°C 0.03 TA = 25°C TA = -55°C 0.02 1.4 1.2 VGS = 10 V ID = 10A VGS = 4.5V ID = 5A 1.0 0.8 0.01 0 0 5 10 15 20 25 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Temperature DMC3025LSD Document number: DS35717 Rev. 7 - 2 30 5 of 10 www.diodes.com 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6. On-Resistance Variation with Temperature February 2015 © Diodes Incorporated 2.0 VGS(th), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.040 0.035 VGS = 4.5V ID = 5A 0.030 0.025 0.020 0.015 VGS = 10 V ID = 10A 0.010 0.005 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 7. On-Resistance Variation with Temperature ID = 1mA 1.6 1.4 ID = 250µA 1.2 1.0 0.8 0.6 0.4 0.2 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 8 Gate Threshold Variation vs. Ambient Temperature CT, JUNCTION CAPACITANCE (pF) 25 IS, SOURCE CURRENT (A) 1.8 10,000 30 TA = 25°C 20 15 10 5 1,000 Ciss 100 Coss Crss f = 1MHz 0 0 10 0.2 0.4 0.6 0.8 1.0 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance 30 100 RDS(on) Limited VGS GATE THRESHOLD VOLTAGE (V) VDS = 15V ID = 10A ID, DRAIN CURRENT (A) ADVANCED INFORMATION DMC3025LSD PW = 10µs 10 DC 1 PW = 10s PW = 1s PW = 100ms 0.1 T J(max) = 150°C TA = 25°C Single Pulse 0 2 4 6 8 10 Qg, TOTAL GATE CHARGE (nC) Figure 11. Gate Charge DMC3025LSD Document number: DS35717 Rev. 7 - 2 12 0.01 0.1 6 of 10 www.diodes.com PW = 10ms PW = 1ms PW = 100µs 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area 100 February 2015 © Diodes Incorporated DMC3025LSD P-CHANNEL 20 VGS = -10V 20 VGS = -5.0V -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 15 VGS = -4.5V VGS = -4.0V 10 VGS = -3.5V 5 15 10 5 TA = 150°C VGS = -3.0V TA = 125°C VGS = -2.5V 0 0.5 1.0 1.5 2.0 2.5 -VDS, DRAIN -SOURCE VOLTAGE (V) Figure 13. Typical Output Characteristics 0 3.0 RDS(ON),DRAIN-SOURCE ON-RESISTANCE (Ω) 0.12 0.10 0.08 0.06 0.04 0.02 0 0 4 8 12 16 -ID, DRAIN SOURCE CURRENT (A) Figure 15. Typical On-Resistance vs. Drain Current and Gate Voltage TA = -55°C 0 1 2 3 4 -VGS, GATE-SOURCE VOLTAGE (V) Figure 14. Typical Transfer Characteristics 5 0.08 0.06 0.04 0.02 20 0.10 0 3 4 5 6 7 8 9 -VGS, GATE SOURCE VOLTAGE (V) Figure 16. Typical On-Resistance vs. Drain Current and Gate Voltage 10 1.7 VGS = -4.5V 0.08 0.06 TA = 150 °C TA = 125 °C 0.04 TA = 85°C TA = 25°C TA = -55°C 0.02 0 TA = 85°C TA = 25°C 0.10 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON),DRAIN-SOURCE ON-RESISTANCE (Ω) 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE(Ω) ADVANCED INFORMATION VDS = -5.0V 0 5 10 15 -ID, DRAIN SOURCE CURRENT (A) Figure 17. Typical On-Resistance vs. Drain Current and Temperature DMC3025LSD Document number: DS35717 Rev. 7 - 2 20 7 of 10 www.diodes.com 1.5 1.3 1.1 0.9 0.7 0.5 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 18. On-Resistance Variation with Temperature February 2015 © Diodes Incorporated 2.0 VGS(TH), GATE THRESHOLD VOLTAGE(V) RDS(on), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.10 0.08 VGS = -4.5V ID = -5A 0.06 0.04 VGS = -10V ID = -10A 0.02 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 19. On-Resistance Variation with Temperature 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 20. Gate Threshold Variation vs. Ambient Temperature 10,000 20 CT, JUNCTION CAPACITANCE (pF) f = 1MHz -IS, SOURCE CURRENT (A) 16 12 8 4 0 0.4 1,000 Ciss Coss 100 Crss 10 0.6 0.8 1.0 1.2 1.4 -VSD, SOURCE-DRAIN VOLTAGE (V) Figure 21. Diode Forward Voltage vs. Current 0 5 10 15 20 25 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 22. Typical Junction Capacitance 30 100 10 RDS(on) Limited PW = 10µs 8 -ID, DRAIN CURRENT (A) -VGS, GATE-SOURCE VOLTAGE (V) ADVANCED INFORMATION DMC3025LSD 6 4 2 0 10 DC 1 PW = 10s PW = 1s PW = 100ms PW = 10ms 0.1 T J(max) = 150°C TA = +25°C Single Pulse 0 2 4 6 8 10 Qg, TOTAL GATE CHARGE (nC) Figure 23. Gate-Charge Characteristics DMC3025LSD Document number: DS35717 Rev. 7 - 2 12 0.01 0.1 8 of 10 www.diodes.com PW = 1ms PW = 100µs 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 24. SOA, Safe Operation Area 100 February 2015 © Diodes Incorporated DMC3025LSD r(t), TRANSIENT THERMAL RESISTANCE D = 0.7 D = 0.5 D = 0.3 D = 0.9 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 Rthja (t) = r(t) * Rthja D = 0.005 Rthja = 83C/W Duty Cycle, D = t1/ t2 D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIMES (sec) Figure 25 Transient Thermal Resistance Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. 0.254 ADVANCED INFORMATION 1 E1 E A1 L Gauge Plane Seating Plane Detail ‘A’ 7°~9° h 45° Detail ‘A’ A2 A A3 b e D SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 0° 8° θ All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. SO-8 X Dimensions X Y C1 C2 C1 Value (in mm) 0.60 1.55 5.4 1.27 C2 Y DMC3025LSD Document number: DS35717 Rev. 7 - 2 9 of 10 www.diodes.com February 2015 © Diodes Incorporated DMC3025LSD IMPORTANT NOTICE ADVANCED INFORMATION DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2015, Diodes Incorporated www.diodes.com DMC3025LSD Document number: DS35717 Rev. 7 - 2 10 of 10 www.diodes.com February 2015 © Diodes Incorporated