CMT2N7002 SMALL SIGNAL MOSFET GENERAL DESCRIPTION FEATURES This N-Channel enhancement mode field effect transistor is High Density Cell Design for Low RDS(ON) produced using high cell density, DMOS technology. These Voltage Controlled Small Signal Switch products have been designed to minimize on-state resistance Rugged and Reliable while provide rugged, reliable, and fast switching performance. High Saturation Current Capability It can be used in most applications requiring up to 115mA DC and can deliver pulsed currents up to 800mA. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. PIN CONFIGURATION SYMBOL SOT-23, SOT-323 SOT-363 Top View Top View D2 G1 D S1 1 G SOURCE DRAIN GATE 3 S2 2 G2 S D1 N-Channel MOSFET ORDERING INFORMATION Part Number Package CMT2N7002 SOT-23 CMT2N7002G* SOT-23 CMT2N7002WG* SOT-323 CMT2N7002DWG* SOT-363 CMT2N7002X* SOT-23 CMT2N7002WX* SOT-323 CMT2N7002DWX* SOT-363 *Note: G : Suffix for Pb Free Product W: Suffix for Package SOT-323 X : Suffix for Halogen Free Product ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 60 V Drain-Gate Voltage (RGS = 1.0MΩ) VDGR 60 V mA Drain to Current － Continuous ID 115 IDM 800 VGS ±20 VGSM ±40 V PD 225 mW 1.8 mW/℃ EAS 9.6 mJ Operating and Storage Temperature Range TJ, TSTG -55 to 150 ℃ Thermal Resistance － Junction to Ambient θJA 417 ℃/W Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds TL 300 ℃ － Pulsed Gate-to-Source Voltage － Continue － Non-repetitive Total Power Dissipation Derate above 25℃ Single Pulse Drain-to-Source Avalanche Energy － TJ = 25℃ V (VDD = 50V, VGS = 10V, IAS = 0.8A, L = 30mH, RG = 25Ω) 2009/07/17 Rev. 1.8 Champion Microelectronic Corporation Page 1 CMT2N7002 SMALL SIGNAL MOSFET ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25℃. Characteristic Symbol CMT2N7002 Min Drain-Source Breakdown Voltage V(BR)DSS Typ Max 60 Units V (VGS = 0 V, ID = 10 μA) IDSS Drain-Source Leakage Current (VDS = 60 V, VGS = 0 V) 1.0 μA (VDS = 60 V, VGS = 0 V, TJ = 125℃) 0.5 mA Gate-Source Leakage Current-Forward (Vgsf = 20 V) IGSSF 100 nA Gate-Source Leakage Current-Reverse (Vgsf = -20 V) IGSSF -100 nA Gate Threshold Voltage * VGS(th) 1.0 2.5 V Id(on) 500 (VDS = VGS, ID = 250 μA) On-State Drain Current (VDS ≧ 2.0 VDS(on), VGS = 10V) Static Drain-Source On-Resistance * mA RDS(on) Ω (VGS = 10 V, ID = 0.5A) 7.5 (VGS = 10 V, ID = 0.5A, TJ = 125℃) 13.5 (VGS = 5.0 V, ID = 50mA) 7.5 (VGS = 5.0 V, ID = 50mA, TJ = 125℃) 13.5 VDS(on) Drain-Source On-Voltage * V (VGS = 10 V, ID = 0.5A) 3.75 (VGS = 5.0 V, ID = 50mA) 0.375 80 mmhos Forward Transconductance (VDS ≧ 2.0 VDS(on), ID = 200mA) * gFS Input Capacitance Ciss 50 pF Coss 25 pF Crss 5.0 pF Output Capacitance (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) Reverse Transfer Capacitance Turn-On Delay Time (VDD = 25 V, ID = 500 mA, td(on) 20 ns Turn-Off Delay Time Vgen = 10 V, RG = 25Ω, RL = 50Ω) * td(off) 40 ns VSD -1.5 V Source Current Continuous (Body Diode) IS -115 mA Source Current Pulsed ISM -800 mA Diode Forward On-Voltage (IS = 115 mA, VGS = 0V) * Pulse Test: Pulse Width ≦300μs, Duty Cycle ≦2% 2009/07/17 Rev. 1.8 Champion Microelectronic Corporation Page 2 CMT2N7002 SMALL SIGNAL MOSFET TYPICAL ELECTRICAL CHARACTERISTICS Figure 5. Capacitance 2009/07/17 Rev. 1.8 Champion Microelectronic Corporation Page 3 CMT2N7002 SMALL SIGNAL MOSFET PACKAGE DIMENSION SOT-23 SOT-323 D b1 3 With Plating c c1 A A1 E E1 A2 b b Base Metal b1 c Section B-B c1 D E 1 2 e e1 E1 b L L1 e e1 A1 θ A2 A θ 2009/07/17 Rev. 1.8 See Section B-B L L1 Champion Microelectronic Corporation Page 4 CMT2N7002 SMALL SIGNAL MOSFET SOT-363 2009/07/17 Rev. 1.8 Champion Microelectronic Corporation Page 5 CMT2N7002 SMALL SIGNAL MOSFET IMPORTANT NOTICE Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life-support applications, devices or systems or other critical applications. Use of CMC products in such applications is understood to be fully at the risk of the customer. In order to minimize risks associated with the customer’s applications, the customer should provide adequate design and operating safeguards. HsinChu Headquarter Sales & Marketing 5F, No. 11, Park Avenue II, Science-Based Industrial Park, HsinChu City, Taiwan T E L : +886-3-567 9979 F A X : +886-3-567 9909 21F., No. 96, Sec. 1, Sintai 5th Rd., Sijhih City, Taipei County 22102, Taiwan, R.O.C. 2009/07/17 Rev. 1.8 T E L : +886-2-2696 3558 F A X : +886-2-2696 3559 Champion Microelectronic Corporation Page 6