BSR18B PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch. Sourced from Process 23. Marking 3 T93 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol * Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage Parameter 40 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current (DC) 200 mA TJ, TSTG Junction Temperature, Storage Temperature -55 ~ +150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD R θ JA * Ta = 25°C unless otherwise noted Characteristic Max Units Total Device Dissipation 230 Derate above 25℃ 1.84 mW mW/℃ Thermal Resistance, Junction to Ambient 550 ℃/W *Device mounted on FR-4 PCB 1.6” X 1.6” X 0.06”. ©2007 Fairchild Semiconductor Corporation Rev. A 1 www.fairchildsemi.com PNP General Purpose Amplifier June 2007 Symbol * Ta = 25°C unless otherwise noted Parameter Test Condition MIN MAX Units Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage IC = 1.0 mA, IB = 0 40 V V(BR)CBO Collector-Base Breakdown Voltage IC = 10 μA, IE = 0 40 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 μA, IC = 0 5.0 ICBO Collector-Cutoff Current VCB = 30 V 50 nA IEBO Emitter-Cutoff Current VCE = 30 V, VEB = 3.0 V 50 nA V On Characteristics hFE DC Current Gain IC = 0.1 mA, VCE = 1.0 V IC = 1.0 mA, VCE = 1.0 V IC = 10 mA, VCE = 1.0 V IC = 50 mA, VCE = 1.0 V IC = 100 mA, VCE = 1.0 V VCE(sat) Collector-Emitter Saturation Voltage * IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA VBE(sat) Emitter-Base Breakdown Voltage * IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA 60 80 110 60 30 0.65 220 0.25 0.4 V V 0.85 0.95 V V Small Signal Characteristics Ccb Collector-Base Capacitance VCB = 5.0 V, IE = 0, f = 100 kHz 4.5 pF Ceb Emitter-Base Capacitance VEB = 0.5 V, IC = 0, f = 100 kHz 10 pF IC = 10 mA, IB1 = 1.0 mA,Vcc= 3.0 V 35 ns 35 pF Switching Characteristics td Delay Time tr Rise Time ts Storage Time IC = 10 mA, IBon = IBoff = 1.0 mA 225 ns tf Fall Time Vcc= 3.0 V 75 ns * Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors. Typical Performance Characteristics 2 BSR18B Rev. A www.fairchildsemi.com BSR18B PNP General Purpose Amplifier Electrical Characteristics BSR18B PNP General Purpose Amplifier Typical Performance Characteristics (continued) 3 BSR18B Rev. A www.fairchildsemi.com FAIRCHILD SEMICONDUCTOR TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT® FAST® FASTr™ FPS™ FRFET™ FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I23 4 BSR18B Rev. A www.fairchildsemi.com BSR18B PNP General Purpose Amplifier tm