NTS10120EMFS, NRVTS10120EMFS Very Low Leakage Trench-based Schottky Rectifier http://onsemi.com Features • Fine Lithography Trench−based Schottky Technology for Very Low • • • • • • • Forward Voltage and Low Leakage Fast Switching with Exceptional Temperature Stability Low Power Loss and Lower Operating Temperature Higher Efficiency for Achieving Regulatory Compliance Low Thermal Resistance High Surge Capability NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These are Pb−Free and Halide−Free Devices • Switching Power Supplies including Notebook / Netbook Adapters, ATX and Flat Panel Display High Frequency and DC−DC Converters Freewheeling and OR−ing Diodes Reverse Battery Protection LED Lighting Instrumentation • MARKING DIAGRAM A Case: Epoxy, Molded Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in. Lead Finish: 100% Matte Sn (Tin) Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Device Meets MSL 1 Requirements A SO−8 FLAT LEAD CASE 488AA STYLE 2 TE1012 A Y W ZZ Mechanical Characteristics: • • • • 5,6 1,2,3 1 Typical Applications • • • • • TRENCH SCHOTTKY RECTIFIERS 10 AMPERES 120 VOLTS A C TE1012 AYWWZZ C Not Used = Specific Device Code = Assembly Location = Year = Work Week = Lot Traceability ORDERING INFORMATION Device Package Shipping† NTS10120EMFST1G SO−8 FL (Pb−Free) 1500 / Tape & Reel NTS10120EMFST3G SO−8 FL (Pb−Free) 5000 / Tape & Reel NRVTS10120EMFST1G SO−8 FL (Pb−Free) 1500 / Tape & Reel NRVTS10120EMFST3G SO−8 FL (Pb−Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2014 June, 2014 − Rev. 0 1 Publication Order Number: NTS10120EMFS/D NTS10120EMFS, NRVTS10120EMFS MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 120 Average Rectified Forward Current (Rated VR, TC = 165°C) IF(AV) 10 A Peak Repetitive Forward Current, (Rated VR, Square Wave, 20 kHz, TC = 163°C) IFRM 20 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 200 A Storage Temperature Range Tstg −65 to +175 °C Operating Junction Temperature TJ −55 to +175 °C EAS 100 mJ Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive) V ESD Rating (Human Body Model) 3B ESD Rating (Machine Model) M4 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case, Steady State (Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board) Symbol Typ Max Unit RθJC 1.8 − °C/W Symbol Typ Max Unit 0.6 0.735 − 0.82 0.515 0.588 − 0.63 1.0 3.75 − 30 mA mA 2.0 3.1 − 20 mA mA ELECTRICAL CHARACTERISTICS Rating Instantaneous Forward Voltage (Note 1) (IF = 5 A, TJ = 25°C) (IF = 10 A, TJ = 25°C) VF (IF = 5 A, TJ = 125°C) (IF = 10 A, TJ = 125°C) Instantaneous Reverse Current (Note 1) (VR = 90 V, TJ = 25°C) (Rated dc Voltage, TJ = 25°C) V IR (VR = 90 V, TJ = 125°C) (Rated dc Voltage, TJ = 125°C) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. http://onsemi.com 2 NTS10120EMFS, NRVTS10120EMFS TYPICAL CHARACTERISTICS 100 iF, INSTANTANEOUS FORWARD CURRENT (A) iF, INSTANTANEOUS FORWARD CURRENT (A) 100 TA = 125°C TA = 150°C 10 TA = 175°C 1 TA = 25°C TA = −55°C 0.1 TA = 125°C 10 TA = 150°C TA = 25°C TA = −55°C 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Instantaneous Forward Characteristics Figure 2. Maximum Instantaneous Forward Characteristics IR, INSTANTANEOUS REVERSE CURRENT (A) VF, INSTANTANEOUS FORWARD VOLTAGE (V) 1.E+00 1.E+00 1.E−01 TA = 175°C TA = 150°C 1.E−02 TA = 175°C TA = 150°C TA = 125°C 1.E−01 1.E−02 TA = 125°C 1.E−03 1.E−03 1.E−04 1.E−04 TA = 25°C 1.E−05 1.E−05 TA = 25°C 1.E−06 1.E−06 1.E−07 1.E−07 0 10 20 30 40 50 60 70 90 100 110 120 80 10 20 30 40 50 60 70 80 90 100 110 120 VR, INSTANTANEOUS REVERSE VOLTAGE (V) Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics 10,000 TJ = 25°C 1000 100 10 0.1 0 VR, INSTANTANEOUS REVERSE VOLTAGE (V) IF(AV), AVERAGE FORWARD CURRENT (A) IR, INSTANTANEOUS REVERSE CURRENT (A) 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 C, JUNCTION CAPACITANCE (pF) TA = 175°C 1 1 10 100 25 RqJC = 1.8°C/W 20 DC 15 Square Wave 10 5 0 110 120 130 140 150 160 VR, REVERSE VOLTAGE (V) TC, CASE TEMPERATURE (°C) Figure 5. Typical Junction Capacitance Figure 6. Current Derating http://onsemi.com 3 170 NTS10120EMFS, NRVTS10120EMFS PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) TYPICAL CHARACTERISTICS 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 IPK/IAV = 20 IPK/IAV = 10 TJ = 175°C IPK/IAV = 5 Square Wave DC 0 2 4 6 8 10 14 12 IF(AV), AVERAGE FORWARD CURRENT (A) Figure 7. Forward Power Dissipation 100 50% Duty Cycle R(t) (°C/W) 10 1 20% 10% 5% 2% 1% Assumes 25°C ambient and soldered to a 600 mm2 − oz copper pad on PCB 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 10 100 1000 PULSE TIME (sec) Figure 8. Typical Thermal Characteristics R(t) (°C/W) 10 1 50% Duty Cycle 20% 10% 0.1 5% 2% 0.01 1% Single Pulse 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 PULSE TIME (sec) Figure 9. Typical Transient Thermal Response Characteristics, Junction−to−Case http://onsemi.com 4 NTS10120EMFS, NRVTS10120EMFS PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE H 2X 0.20 C D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. A 2 B D1 2X 0.20 C 4X E1 q E 2 c 1 2 3 DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q A1 4 TOP VIEW 0.10 C 3X C e SEATING PLANE DETAIL A A STYLE 2: PIN 1. ANODE 2. ANODE 3. ANODE 4. NO CONNECT 5. CATHODE 0.10 C SIDE VIEW 8X b 0.10 C A B 0.05 c 3X 4X 1.270 0.750 4X 1.000 e/2 L 1 4 0.965 K 1.330 2X 0.905 2X E2 PIN 5 (EXPOSED PAD) G SOLDERING FOOTPRINT* DETAIL A MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.15 BSC 4.70 4.90 5.10 3.80 4.00 4.20 6.15 BSC 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.61 0.71 1.20 1.35 1.50 0.51 0.61 0.71 0.05 0.17 0.20 3.00 3.40 3.80 0_ −−− 12 _ L1 M 0.495 4.530 3.200 0.475 D2 2X 1.530 BOTTOM VIEW 4.560 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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