Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR General Description Features The APT13003H series are high voltage, high speed switching NPN power transistors specially designed for off-line switch mode power supplies with low output power. · · · High Switching Speed High Collector-emitter Voltage Low Cost Applications The APT13003H series are available in TO-92 and TO-126 packages. · · TO-92 (Bulk Packing) APT13003H Battery Chargers for Mobile Phone of BCD Solution Power Supply for DVD/STB of BCD Solution TO-92 (Ammo Packing) TO-126 Figure 1. Package Types of APT13003H Pin Configuration Z Package (TO-92 (Bulk Packing)) Z Package (TO-92 (Ammo Packing)) 3 Base 3 Base 2 Collector 2 Collector 1 Emitter 1 Emitter U Package (TO-126) 3 Emitter 2 Collector 1 Base Figure 2. Pin Configuration of APT13003H Aug. 2011 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 1 Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13003H Ordering Information APT13003 G1: Green Circuit Type TR: Ammo Blank: Bulk Package Z: TO-92 U: TO-126 H: APT13003H Package TO-92 TO-126 Part Number Marking ID Packing Type APT13003HZ-G1 13003HZ-G1 Bulk APT13003HZTR-G1 13003HZ-G1 Ammo APT13003HU-G1 GU13003H Bulk BCD Semiconductor's products, as designated with "G1" suffix in the part number, are RoHS compliant and Green. Absolute Maximum Ratings (Note 1) Parameter Symbol Value Unit Collector-emitter Voltage (VBE=0) VCES 800 V Collector-emitter Voltage (IB=0) VCEO 465 V Emitter-base Voltage (IC=0) VEBO 9 V IC 1.5 A ICM 3 A IB 0.75 A IBM 1.5 A Collector Current Collector Peak Current (Pulse) (Note 2) Base Current Base Peak Current (Pulse) (Note 2) Power Dissipation, TA=25oC For TO-92 PTOT 1.1 W Power Dissipation, TC=25oC For TO-126 PTOT 20 W TJ 150 o TSTG -65 to 150 Operating Junction Temperature Storage Temperature Range C oC Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Note 2: Pulse test for pulse width < 5ms, duty cycle ≤ 10%. Aug. 2011 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 2 Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13003H Thermal Characteristics Parameter Symbol For TO-92 Thermal Resistance (Junction-to-Case) For TO-92 oC/W 6.25 113.6 θJA For TO-126 Unit 83.3 θJC For TO-126 Thermal Resistance (Junction-to-Ambient) Value oC/W 96 Electrical Characteristics ( TC=25oC, unless otherwise specified.) Parameter Collector Cut-off Current (VBE=-1.5V) Symbol Conditions ICEV VCE=800V Collector-emitter Sustaining Voltage (IB=0) VCEO (sus) IC=100μA Collector-emitter Saturation Voltage (Note 3) VCE (sat) Base-emitter Saturation Voltage (Note 3) VBE (sat) DC Current Gain (Note 3) Output Capacitance hFE Cob Current Gain Bandwidth Product fT Turn-on Time with Resistive Load ton Storage Time with Resistive Load ts Fall Time with Resistive Load tf Min Typ Max Unit 10 μA 465 V IC=0.5A, IB=0.1A 0.17 0.3 IC=1.0A, IB=0.25A 0.29 0.4 IC=0.5A, IB=0.1A 1.0 IC=1.0A, IB=0.25A 1.2 IC=0.3A, VCE=2V 15 IC=0.5A, VCE=2V 13 IC=1.0A, VCE=2V 5 VCB=10V, f=0.1MHZ VCE=10V, IC=0.1A 17 V 30 25 16 pF 4 IC=1A, VCC=125V, IB1=0.2A, IB2=-0.2A, tP=25μs V MHz 0.3 1 1.8 3 0.28 0.4 μs Note 3: Pulse test for pulse width ≤ 300μs, duty cycle ≤ 2%. Aug. 2011 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 3 Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13003H Typical Performance Characteristics 10 1 0.1 Collector Current IC (A) Collector Current IC (A) 10 DC 0.01 1E-3 1 10 100 1 DC 0.1 0.01 1000 1 10 100 1000 Collector-emitter Clamp Voltage VCE (V) Collector-emitter Clamp Voltage VCE (V) Figure 4. Safe Operating Areas (TO-126 Package) Figure 3. Safe Operating Areas (TO-92 Package) 2.00 125 1.75 IB=400mA 1.50 IB=300mA 1.25 IB=250mA IB=200mA 1.00 IB=150mA 0.75 IB=100mA 0.50 IB=50mA Collector Current IC (A) Power Derating Factor (%) 100 75 50 25 0.25 0 0 25 50 75 100 125 150 175 0.00 200 0 1 2 3 4 5 Collector-emitter Voltage VCE (V) o Case Temperature TC ( C) Figure 5. Power Derating Curve Figure 6. Static Characteristics Aug. 2011 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 4 Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13003H Typical Performance Characteristics (Continued) 40 TA=125 C VCE=1V Collector-emitter Voltage VCE (V) 35 10 VCE=5V o DC Current Gain 30 25 o TA=25 C 20 15 10 1 o o TJ=125 C TJ=25 C 0.1 5 hFE=5 0 0.01 0.1 0.01 0.1 1 1 Collector Current IC (A) Collector Current IC (A) Figure 8. Collector-emitter Saturation Voltage Figure 7. DC Current Gain vs. Collector Current 1.1 20 VCE=2V, IC=0.5A 18 0.9 o TJ=25 C 16 0.8 hFE Base-emitter Voltage VBE (V) 1.0 14 o TJ=125 C 0.7 12 0.6 hFE=5 0.5 10 25 1 Collector Current IC (A) 50 75 100 125 150 o Case Temperature ( C) Figure 10. hFE vs. Case Temperature Figure 9. Base-emitter Saturation Voltage Aug. 2011 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 5 Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13003H Mechanical Dimensions TO-92 (Bulk Packing) Unit: mm(inch) 1.000(0. 039) 3.430(0.135) MIN 3.700(0.146) 3.300(0.130) 1.400(0.055) 0.320(0. 013) 0.510(0. 020) 0. 000(0. 000) 0. 380(0. 015) Φ1. 600(0. 063) MAX 4.700(0.185) 1.270(0. 050) TYP 15.500(0.610) 0.360(0. 014) 0.760(0. 030) 12.500(0.492) 4.300(0.169) 4.400(0.173) 4.800(0.189) 2.420(0. 095) 2.660(0.105) Aug. 2011 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 6 Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13003H Mechanical Dimensions (Continued) TO-92 (Ammo Packing) Unit: mm(inch) 1. 100(0. 043) 3. 430(0.135) MIN 1.270(0.050) Typ 2.500(0.098) 4.000 (0.157 ) 0. 000(0.000) 0. 380(0.015) Φ1. 600(0. 063) MAX 14.500(0.571) 12.500(0.492) 0.320(0. 013) 0. 510(0. 020) 3.800(0.150) 3.300(0.130) 1. 400(0.055) 4.700(0.185) 4.300(0.169) 4.400(0.173) 4.800 (0.189 ) 13.000(0. 512) 15.000 (0.591 ) 0.380(0.015) 0.550(0.022 ) 2.540(0.100) Typ Aug. 2011 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 7 Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13003H Mechanical Dimensions (Continued) 0.000(0.000) 0.300(0.012) 2.400(0.094) 2.900(0.114) 1.060(0.042) 1.500(0.059) 3.900(0.154) 7.400(0.291) 8.200(0.323) 10.600(0.417) 11.200(0.440) Unit: mm(inch) 3.600(0.142) TO-126 Φ Η 3.100(0.122) 3.550(0.140) 1.170(0.046) 1.470(0.058) 2.100(0.083) 1.700(0.067) 14.500(0.570) 15.900(0.626) 0.660(0.026) 4.560(0.180) TYP. 0.860(0.034) 2.280(0.090) TYP Aug. 2011 Rev. 1. 1 0.400(0.016) 0.600(0.024) BCD Semiconductor Manufacturing Limited 8 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com IMPORTANT NOTICE IMPORTANT NOTICE BCD Semiconductor BCD Semiconductor Manufacturing Manufacturing Limited Limited reserves reserves the the right right to to make make changes changes without without further further notice notice to to any any products products or or specifispecifications herein. cations herein. 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