-500mA / -50V Digital transistors (with built-in resistors) DTB143EK Applications Inverter, Interface, Driver Dimensions (Unit : mm) DTB143EK 2.9 1.1 0.4 0.8 (3) 1.6 2.8 (2) (1) 0.95 0.95 0.15 1.9 ROHM : SMT3 EIAJ : SC-59 0.3Min. Features 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2)The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3)Only the on / off conditions need to be set for operation, making the device design easy. (1) GND (2) IN (3) OUT Each lead has same dimension Abbreviated symbol : F13 Structure PNP epitaxial planar silicon transistor (Resistor built-in type) Packaging specifications Inner circuit Package SMT3 Package type Taping OUT R1 Part No. Code T146 Basic ordering unit (pieces) 3000 IN R2 GND(+) DTB143EK OUT IN Absolute maximum ratings (Ta=25C) Parameter Symbol Limits GND(+) Unit DTB143EK R1=R2=4.7kΩ Supply voltage VCC −50 Input voltage VIN −30 to +10 V Output current IC −500 mA Power dissipation Pd 200 mW V Junction temperature Tj 150 C Storage temperature Tstg −55 to +150 C www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/2 2009.06 - Rev.C DTB143EK Data Sheet Electrical characteristics (Ta=25C) Parameter Input voltage Output voltage Input current Symbol Min. Typ. Max. VI(off) − − −0.5 VI(on) −3 − − VO(on) − −0.1 −0.3 V II − − −1.8 mA VI= −5V VCC= −50V, VI=0V Unit Conditions VCC= −5V, IO= −100μA V VO= −0.3V, IO= −20mA IO/II= −50mA/−2.5mA IO(off) − − −0.5 μA DC current gain GI 47 − − − Input resistance R1 3.29 4.7 6.11 kΩ Resistance ratio R2/R1 0.8 1 1.2 − − 200 − MHz Output current fT ∗ Transition frequency VO= −5V, IO= −50mA − − VCE= −10V, IE=50mA, f=100MHz ∗ Characteristics of built-in tranasistor Electrical characteristic curves -10m -5m VO= −0.3V OUTPUT CURRENT : Io (A) INPUT VOLTAGE : VI (on) (V) -50 -20 -10 Ta= −40 C 25 C 100 C -5 -2 -1 -500m -200m -100m -0.5m -1m -2m -5m -10m -20m -50m -100m -200m -500m OUTPUT CURRENT : IO (A) Fig.1 Input voltage vs. output current (ON characteristics) -1 -2m -1m -500μ VO= −5V 500 -200μ -100μ -50μ -20μ -10μ -5μ -2μ -1μ 0 1k VCC= −5V Ta=100 C 25 C −40 C DC CURRENT GAIN : GI -100 200 100 Ta=100 C 25 C −40 C 50 20 10 5 2 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 INPUT VOLTAGE : VI (off) (V) Fig.2 Output current vs. input voltage (OFF characteristics) 1 -0.5m -1m -2m -5m -10m -20m -50m -100m -200m -500m OUTPUT CURRENT : IO (A) Fig.3 DC current gain vs. output current lO/lI=20 OUTPUT VOLTAGE : VO (on) (V) -500m Ta=100 C 25 C −40 C -200m -100m -50m -20m -10m -5m -2m -1m -0.5m -1m -2m -5m -10m -20m -50m -100m -200m -500m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current www.rohm.com c 2009 ROHM Co., Ltd. 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