DSS16L HD FL 45 SOD1 23FL Plastic-Encapsulate Diodes Features ●Io 1A SOD-1 23FL ●VRRM 60V ●High surge current capability ● Polarity: Color band denotes cathode ●Low Vf Applications ● Rectifier Marking ● DSS16L : S16L Item Symbol Unit Repetitive Peak Reverse Voltage DSS16L Test Conditions VRRM V Average Forward Current IF(AV) A 60HZ Half-sine wave, Resistance 1.0 Surge(Non-repetitive)Forward Current IFSM A 60Hz Half-sine wave ,1 cycle , Ta =25℃ 50 TJ ℃ -55~+150 TSTG ℃ -55 ~ +150 Junction Temperature Storage Temperature 60 Electrical Characteristics (T =25℃ Unless otherwise specified） Item Peak Forward Voltage Peak Reverse Current Symbol Unit VF IRRM1 IRRM2 RθJ-A Thermal Resistance(Typical) RθJ-L Test Condition IF =1.0A V mA ℃/ W DSS16L VRM=VRRM 0.5 Ta =25℃ 0.05 Ta =100℃ 5 1) Between junction and ambient 88 Between junction and terminal 281) Notes: Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas High Diode Semiconductor 1 Typical Characteristics FIG.1: FORWARD CURRENT DERATING CURVE IFSM(A) FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT 50 40 30 20 10 0 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) 1 10 100 Number of Cycles FIG.4：TYPICAL REVERSE CHARACTERISTICS IR(mA) IF(A) FIG.3: TYPICAL FORWARD CHARACTERISTICS 100 TJ=25℃ Pulse width=300us 1% Duty Cycle 100 TA = 150 °C 10 10 1 1.0 TA = 125 °C 0.1 0.01 0.1 TA = 25 °C 0.001 0.0001 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 20 30 40 50 VF(V) High Diode Semiconductor 60 70 80 90 100 Voltage(%) 2 SOD-1 23FL 1.8± 0.1 １．０ ±0.15 Cathode Band Top View 1.3± 0.1 0.12-0.20 2.8 ±0.15 0.8±0.1 3.7 ±0.15 Dimensions in millimeters SOD-1 23FL 1.4 2.85 1.2 JSHD JSHD High Diode Semiconductor 3 Reel Taping Specifications For Surface Mount Devices-SOD123FL SOD123FL High Diode Semiconductor 4