IRF IRHLG77110 Radiation hardened logic level power mosfet logic level power mosfet Datasheet

PD-97178
2N7612M1
IRHLG77110
100V, Quad N-CHANNEL
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
THRU-HOLE (MO-036AB)
TECHNOLOGY
™
Product Summary
Part Number Radiation Level RDS(on)
IRHLG77110
100K Rads (Si) 0.22Ω
IRHLG73110
300K Rads (Si) 0.22Ω
ID
1.8A
1.8A
MO-036AB
International Rectifier’s R7TM Logic Level Power
MOSFETs provide simple solution to interfacing
CMOS and TTL control circuits to power devices in
space and other radiation environments. The
threshold voltage remains within acceptable
operating limits over the full operating temperature
and post radiation. This is achieved while maintaining
single event gate rupture and single event burnout
immunity.
These devices are used in applications such as
current boost low signal source in PWM, voltage
comparator and operational amplifiers.
Features:
n
n
n
n
n
n
n
n
5V CMOS and TTL Compatible
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
Pre-Irradiation
Absolute Maximum Ratings
Parameter
ID @ VGS = 4.5V, TC=25°C
ID @ VGS = 4.5V, TC=100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
1.8
1.1
7.2
1.4
0.01
±10
97
1.8
0.14
11
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
oC
300 (0.063in/1.6mm from case for 10s)
1.3 (Typical)
g
For footnotes refer to the last page
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1
03/20/08
IRHLG77110, 2N7612M1
Pre-Irradiation
Electrical Characteristics For Each N-Channel Device @ Tj = 25°C (Unless Otherwise specified)
Parameter
Min
BVDSS
Drain-to-Source Breakdown Voltage
∆BV DSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
Test Conditions
—
—
V
—
0.11
—
V/°C
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1.0mA
—
—
0.22
Ω
VGS = 4.5V, ID = 1.1A
1.0
—
3.0
—
—
—
-4.4
—
—
—
2.0
—
—
1.0
10
V
mV/°C
S
VDS = VGS, ID = 250µA
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
10
100
-100
15
2.5
6.0
15
20
65
25
—
∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Typ Max Units
100
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
µA
nA
nC
Ã
VDS = 10V, IDS = 1.1A Ã
VDS= 80V ,VGS= 0V
VDS = 80V,
VGS = 0V, TJ =125°C
VGS = 10V
VGS = -10V
VGS = 4.5V, ID = 1.8A
VDS = 50V
VDD = 50V, ID = 1.8A,
VGS = 4.5V, RG = 7.5Ω
ns
Measured from Drain lead (6mm /0.25in
nH
from pack.) to Source lead (6mm/0.25in
from pack.)with Source wire internally
bonded from Source pin to Drain pad
C iss
C oss
C rss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
653
119
2.7
—
—
—
pF
VGS = 0V, VDS = 25V
f = 1.0MHz
Gate Resistance
—
16
—
Ω
f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
Min Typ Max Units
IS
ISM
VSD
t rr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
1.8
7.2
1.2
100
223
Test Conditions
A
V
ns
nC
Tj = 25°C, IS = 1.8A, VGS = 0V Ã
Tj = 25°C, IF = 1.8A, di/dt ≤ 100A/µs
VDD ≤ 25V Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance (Per Die)
Parameter
RthJA
Junction-to-Ambient
Min Typ Max Units
—
—
90
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHLG77110, 2N7612M1
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ (Per Die)
Parameter
BVDSS
V GS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
Up to 300K Rads (Si)1
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source „
On-State Resistance (TO-39)
Static Drain-to-Source On-state „
Resistance (MO-036AB)
Diode Forward Voltage
„
Units
Test Conditions
Min
Max
100
1.0
—
—
—
—
2.0
100
-100
10
µA
—
0.25
Ω
VGS = 4.5V, ID = 1.1A
—
0.22
Ω
VGS = 4.5V, ID = 1.1A
—
1.2
V
VGS = 0V, ID = 1.8A
VGS = 0V, ID = 250µA
VGS = VDS, ID = 250µA
VGS = 10V
VGS = -10V
VDS= 80V, VGS=0V
V
nA
1. Part numbers IRHLG77110, IRHLG73110
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area (Per Die)
Ion
Br
LET
Energy
Range
(MeV/(mg/cm2))
(MeV)
(µm)
37
305
39
VDS (V)
@VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS=
0V
-1V
-2V
-4V
-5V
-6V
-7V
-8V
100
100
100
100
100
100
100
100
60
370
34
100
100
100
100
100
100
-
-
84
390
30
100
100
100
100
100
-
-
-
VDS
I
Au
120
100
80
60
40
20
0
Br
I
Au
0
-1
-2
-3
-4
-5
-6
-7
-8
VGS
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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IRHLG77110, 2N7612M1
Pre-Irradiation
10
10
1
2.0V
60µs PULSE WIDTH
Tj = 25°C
0.1
2.0V
1
60µs PULSE WIDTH
Tj = 150°C
0.1
0.1
1
10
100
0.1
VDS, Drain-to-Source Voltage (V)
10
100
Fig 2. Typical Output Characteristics
10
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.5
T J = 150°C
ID, Drain-to-Source Current (A)
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
T J = 25°C
1
VDS = 50V
15
60µs PULSE
WIDTH
0.1
ID = 1.8A
2.0
1.5
1.0
0.5
VGS = 4.5V
0.0
2
2.2
2.4
2.6
2.8
3
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
VGS
10V
5.0V
4.5V
3.0V
2.75V
2.5V
2.25V
BOTTOM 2.0V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
VGS
TOP
10V
5.0V
4.5V
3.0V
2.75V
2.5V
2.25V
BOTTOM 2.0V
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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IRHLG77110, 2N7612M1
0.5
ID = 1.8A
0.4
T J = 150°C
0.3
T J = 25°C
0.2
0.1
0
1
2
3
4
5
6
7
8
9
RDS(on), Drain-to -Source On Resistance ( Ω)
RDS(on), Drain-to -Source On Resistance (Ω)
Pre-Irradiation
0.4
0.35
T J = 150°C
0.3
0.25
T J = 25°C
0.2
0.15
Vgs = 4.5V
0.1
10 11
0.5
1.5
2.5
VGS, Gate -to -Source Voltage (V)
Fig 5. Typical On-Resistance Vs
Gate Voltage
4.5
5.5
6.5
7.5
Fig 6. Typical On-Resistance Vs
Drain Current
130
2.5
ID = 1.0mA
VGS(th) Gate threshold Voltage (V)
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
3.5
ID, Drain Current (A)
120
110
2.0
1.5
1.0
0.5
ID = 50µA
ID = 250µA
ID = 1.0mA
ID = 150mA
0.0
100
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Temperature ( °C )
Fig 7. Typical Drain-to-Source
Breakdown Voltage Vs Temperature
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-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Temperature ( °C )
Fig 8. Typical Threshold Voltage Vs
Temperature
5
IRHLG77110, 2N7612M1
1400
VGS = 0V,
f = 1 MHz
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
1200
C oss = C ds + C gd
12
ID = 1.8A
VGS, Gate-to-Source Voltage (V)
C, Capacitance (pF)
1600
Pre-Irradiation
1000
Ciss
800
Coss
600
400
Crss
200
0
10
8
6
4
2
FOR TEST CIRCUIT
SEE FIGURE 17
0
1
10
100
0
4
8
12
16
20
VDS, Drain-to-Source Voltage (V)
QG, Total Gate Charge (nC)
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
10
24
2
ID, Drain Current (A)
ISD, Reverse Drain Current (A)
VDS = 80V
VDS = 50V
VDS = 20V
1
T J = 150°C
T J = 25°C
0.1
1.5
1
0.5
VGS = 0V
0.01
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD , Source-to-Drain Voltage (V)
Fig 11. Typical Source-to-Drain Diode
Forward Voltage
6
25
50
75
100
125
150
T C , Case Temperature (°C)
Fig 12. Maximum Drain Current Vs.
Case Temperature
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Pre-Irradiation
IRHLG77110, 2N7612M1
240
EAS , Single Pulse Avalanche Energy (mJ)
ID, Drain-to-Source Current (A)
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10
1ms
1
0.1
Tc = 25°C
Tj = 150°C
Single Pulse
10ms
ID
0.8A
1.1A
1.8A
TOP
200
BOTTOM
160
120
80
40
0
1
10
100
1000
25
VDS , Drain-to-Source Voltage (V)
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy
Vs. Drain Current
Fig 13. Maximum Safe Operating Area
Thermal Response ( Z thJA )
1000
100
D = 0.50
10
1
0.20
0.10
0.05
P DM
0.02
0.01
t1
SINGLE PULSE
( THERMAL RESPONSE )
0.1
t2
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
1E-005
0.0001
0.001
0.01
0.1
1
10
100
1000
t1 , Rectangular Pulse Duration (sec)
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRHLG77110, 2N7612M1
Pre-Irradiation
V(BR)DSS
tp
15V
DRIVER
L
VDS
D.U.T.
RG
+
V
- DD
IAS
VGS
20V
A
I AS
0.01Ω
tp
Fig 16a. Unclamped Inductive Test Circuit
Fig 16b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
QG
4.5V
50KΩ
.2µF
12V
QGS
.3µF
QGD
D.U.T.
VG
+
V
- DS
VGS
3mA
IG
Charge
Fig 17a. Basic Gate Charge Waveform
VDS
Fig 17b. Gate Charge Test Circuit
RD
VDS
90%
V GS
D.U.T.
RG
ID
Current Sampling Resistors
VDD
+
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
8
10%
VGS
td(on)
tr
t d(off)
tf
Fig 18b. Switching Time Waveforms
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Pre-Irradiation
IRHLG77110, 2N7612M1
Footnotes:
À Repetitive Rating; Pulse width limited by
maximum junction temperature.
Á VDD = 25V, starting TJ = 25°C, L= 6.6mH
Peak IL = 1.8A, VGS = 10V
 ISD ≤ 1.8A, di/dt ≤ 497A/µs,
VDD ≤ 100V, TJ ≤ 150°C
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with VGS Bias.
10 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Å Total Dose Irradiation with VDS Bias.
80 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — MO-036AB
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 03/2008
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