MAC210A8, MAC210A10 Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave AC control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full−wave silicon gate controlled solid−state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied main terminal voltage with positive or negative gate triggering. http://onsemi.com TRIACS 10 AMPERES RMS 600 thru 800 VOLTS Features • Blocking Voltage to 600 Volts • All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability MT2 • Small, Rugged, Thermowatt Construction for Low Thermal • • MT1 G Resistance, High Heat Dissipation and Durability Gate Triggering Guaranteed in Four Modes (Quadrants) Pb−Free Packages are Available* MARKING DIAGRAM MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Peak Repetitive Off−State Voltage (Note 1) (TJ = −40 to +125°C, Sine Wave 50 to 60 Hz, Gate Open) MAC210A8 MAC210A10 VDRM, VRRM On−State RMS Current (TC = +70°C) Full Cycle Sine Wave 50 to 60 Hz IT(RMS) Peak Non−Repetitive Surge Current (One Full Cycle, Sine Wave 60 Hz, TC = +25°C) Preceded and followed by rated current Circuit Fusing Considerations, (t = 8.3 ms) Peak Gate Power (TC = +70°C, Pulse Width = 10 ms) Average Gate Power (TC = +70°C, t = 8.3 ms) Peak Gate Current (TC = +70°C, Pulse Width = 10 ms) Value Unit V MAC210AxG AYWW 600 800 10 A 1 ITSM 100 A I2t 40 A2s PGM 20 W PG(AV) 0.35 W IGM 2.0 A 2 TO−220AB CASE 221A−07 STYLE 4 3 x A Y WW G = 8 or 10 = Assembly Location = Year = Work Week = Pb−Free Package PIN ASSIGNMENT 1 Main Terminal 1 Operating Junction Temperature Range TJ −40 to +125 °C 2 Main Terminal 2 Storage Temperature Range Tstg −40 to +150 °C 3 Gate 4 Main Terminal 2 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2005 December, 2005 − Rev. 2 1 ORDERING INFORMATION Device Package Shipping MAC210A8 TO−220AB 500 Units/Box MAC210A8G TO−220AB (Pb−Free) 500 Units/Box MAC210A10 TO−220AB 500 Units/Box MAC210A10G TO−220AB (Pb−Free) 500 Units/Box Publication Order Number: MAC210A8/D MAC210A8, MAC210A10 THERMAL CHARACTERISTICS Characteristic Thermal Resistance − Junction−to−Case − Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds Symbol Value Unit RqJC RqJA 2.0 62.5 °C/W TL 260 °C ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit − − − − 10 2.0 mA mA − 1.2 1.65 V OFF CHARACTERISTICS Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C TJ = +125°C IDRM, IRRM ON CHARACTERISTICS Peak On-State Voltage (ITM = "14 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle p 2%) VTM Gate Trigger Current (Continuous dc) (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) MT2(−), G(+) IGT Gate Trigger Voltage (Continuous dc) (Main Terminal Voltage = 12 Vdc, RL = 100 W) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) MT2(−), G(+) VGT Gate Non−Trigger Voltage (Continuous dc) (Main Terminal Voltage = 12 V, RL = 100 W, TJ = +125°C) All Four Quadrants mA − − − − 12 12 20 35 50 50 50 75 V − − − − 0.9 0.9 1.1 1.4 2.0 2.0 2.0 2.5 VGD 0.2 − − V Holding Current (Main Terminal Voltage = 12 Vdc, Gate Open, Initiating Current = "200 mA, TC = +25°C) IH − 6.0 50 mA Turn-On Time (Rated VDRM, ITM = 14 A) (IGT = 120 mA, Rise Time = 0.1 ms, Pulse Width = 2 ms) tgt − 1.5 − ms dv/dt(c) − 5.0 − V/ms dv/dt − 100 − V/ms DYNAMIC CHARACTERISTICS Critical Rate of Rise of Commutation Voltage (VD = Rated VDRM, ITM = 14 A, Commutating di/dt = 5.0 A/ms, Gate Unenergized, TC = 70°C) Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM, Exponential Voltage Rise, Gate Open, TC = +70°C) http://onsemi.com 2 MAC210A8, MAC210A10 Voltage Current Characteristic of Triacs (Bidirectional Device) + Current Symbol Parameter VDRM Peak Repetitive Forward Off State Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Reverse Off State Voltage IRRM Peak Reverse Blocking Current VTM Maximum On State Voltage IH Holding Current VTM on state IH IRRM at VRRM off state IH Quadrant 3 MainTerminal 2 − VTM Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) + (+) MT2 Quadrant II (+) MT2 Quadrant I (+) IGT GATE (−) IGT GATE MT1 MT1 REF REF IGT − + IGT (−) MT2 Quadrant III Quadrant 1 MainTerminal 2 + (−) MT2 Quadrant IV (+) IGT GATE (−) IGT GATE MT1 MT1 REF REF − MT2 NEGATIVE (Negative Half Cycle) All polarities are referenced to MT1. With in−phase signals (using standard AC lines) quadrants I and III are used. http://onsemi.com 3 + Voltage IDRM at VDRM 14.0 P (AV) , AVERAGE POWER DISSIPATION 130 CONDUCTION ANGLE = 360° 10.0 110 100 90 80 70 8.0 6.0 4.0 2.0 0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 IT(RMS), RMS ON-STATE CURRENT (AMPS) 1.0 9.0 10.0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 IT(RMS), RMS ON-STATE CURRENT (AMPS) Figure 1. Current Derating 100 10.0 100 50 20 10 5.0 2.0 9.0 Figure 2. Power Dissipation ITSM , PEAK SURGE CURRENT (AMP) 0 TJ = 25°C TJ = 125°C 80 60 CYCLE 40 TC = 70°C f = 60 Hz Surge is preceded and followed by rated current 20 0 1.0 1.0 2.0 0.5 3.0 5.0 7.0 10 NUMBER OF CYCLES Figure 4. Maximum Non−Repetitive Surge Current 0.2 VGT , GATE TRIGGER VOLTAGE (NORMALIZED) 60 CONDUCTION ANGLE = 360° 12.0 120 IT, INSTANTANEOUS ON-STATE CURRENT (AMPS) TC, MAXIMUM ALLOWABLE CASE TEMPERATURE (° C) MAC210A8, MAC210A10 0.1 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) Figure 3. Maximum On−State Characteristics 2.0 OFF-STATE VOLTAGE = 12 Vdc ALL MODES 1.6 1.2 0.8 0.4 0 −60 −40 0 40 −20 20 TC, CASE TEMPERATURE (°C) 60 Figure 5. Typical Gate Trigger Voltage http://onsemi.com 4 80 2.8 2.0 IH , HOLDING CURRENT (NORMALIZED) I GT, GATE TRIGGER CURRENT (NORMALIZED) MAC210A8, MAC210A10 OFF-STATE VOLTAGE = 12 Vdc ALL MODES 1.6 1.2 0.8 0.4 0 −60 −40 −20 0 20 40 60 2.4 1.6 1.2 0.8 0.4 0 −60 80 OFF-STATE VOLTAGE = 12 Vdc ALL MODES 2.0 −40 TC, CASE TEMPERATURE (°C) 0 20 40 60 80 TC, CASE TEMPERATURE (°C) Figure 6. Typical Gate Trigger Current r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) −20 Figure 7. Typical Holding Current 1.0 0.5 0.2 ZqJC(t) = r(t) • RqJC 0.1 0.05 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 20 50 100 t, TIME (ms) Figure 8. Thermal Response http://onsemi.com 5 200 500 1.0 k 2.0 k 5.0 k 10 k MAC210A8, MAC210A10 PACKAGE DIMENSIONS TO−220AB CASE 221A−07 ISSUE AA −T− B F T SEATING PLANE C S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z 4 Q A 1 2 3 U H K Z R L V J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.014 0.022 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 −−− −−− 0.080 STYLE 4: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.36 0.55 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 −−− −−− 2.04 MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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