Kexin BF820 Npn high-voltage transistor Datasheet

Transistors
SMD Type
NPN High-Voltage Transistors
BF820,BF822
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
+0.1
1.3-0.1
+0.1
2.4-0.1
Features
0.4
3
1
High voltage (max. 300 V).
0.55
Low current (max. 50 mA)
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Collector-base voltage
BF820
VCBO
BF822
Collector-emitter voltage
BF820
VCEO
BF822
Emitter-base voltage
Rating
Unit
300
V
250
V
300
V
250
V
5
V
VEBO
Collector current
IC
50
mA
Peak collector current
ICM
100
mA
Peak base current
IBM
50
mA
mW
Total power dissipation *
Ptot
250
Storage temperature
Tstg
-65 to +150
Junction temperature
Tj
150
Operating ambient temperature
Ramb
-65 to +150
Thermal resistance from junction to ambient *
Rth j-a
500
K/W
* Transistor mounted on an FR4 printed-circuit board.
Electrical Characteristics Ta = 25
Parameter
Symbol
Collector cutoff current
ICBO
Testconditons
Min
Typ
Max
Unit
IE = 0; VCB = 200 V
10
nA
ìA
IE = 0; VCB = 200 V; Tj = 150
10
Emitter cutoff current
IEBO
IC = 0; VEB = 5 V
50
nA
DC current gain *
hFE
IC = 25 mA; VCE = 20 V
600
mV
collector-emitter saturation voltage
VCEsat
Feedback capacitance
Cre
Transition frequency
fT
50
IC = 30 mA; IB = 5 mA
IC = ic = 0; VCB = 30 V; f = 1 MHz
IC = 10 mA; VCE = 10 V; f = 100 MHz
1.6
60
pF
MHz
hFE Classification
TYPE
BF820
BF822
Marking
1V
1X
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