Diode Semiconductor Korea FR101G --- FR107G VOLTAGE RANGE: 50 --- 1000 V CURRENT: 1.0 A GLASS PASSIVATED RECTIFIERS FEATURES Low cost Glass passivated junction DO - 41 Low leakage Low forward voltage drop High current capability z Easily cleaned with alcohol,Isopropanol and similar solvents The plastic material carries U/L recognition 94V-0 MECHANICAL DATA Case:JEDEC DO-41,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Dimensions in millimeters Weight: 0.012 ounces,0.34 grams Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. FR101G FR102G FR103G FR104G FR105G FR106G FR107G UNITS Maximum recurrent peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V Maximum average forw ard rectified current 9.5mm lead length, @TA=75 IF(AV) 1.0 A IFSM 30.0 A VF 1.3 V Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @TJ=125 Maximum instantaneous forw ard voltage at 1.0A Maximum reverse current @TA=25 at rated DC blocking voltage @TA=100 5.0 IR Maximum reverse recovery time (Note1) trr Typical junction capacitance (Note2) CJ 12.0 Typical thermal resistance (Note3) RθJA 55.0 TJ - 55 ---- + 175 TSTG - 55 ---- +175 Operating junction temperature range Storage temperature range A 100.0 150 250 500 ns pF ／Ｗ NOTE: 1. Measured with I F =0.5A, I R=1A, I rr=0.25A. 2. Measured at 1.0MHZ and applied rev erse v oltage of 4.0V DC. 3.Thermal resistance junction to ambient www.diode.kr Diode Semiconductor Korea FR101G --- FR107G FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC 50 N 1. 10 N 1. trr +0.5A D.U.T. (+) 25VDC (approx) (-) OSCILLOSCOPE (NOTE 1) 1 NONINDUCTIVE 0 PULSE GENERATOR (NOTE2) -0.25A -1.0A 1cm NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE =1M . 22pF. JJJJ 2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 . SET TIME BASE FOR 50/100 ns/cm FIG.3 -- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS Single Phase Half Wave 60HZ Resistive or Inductive Load 1.00 0.75 0.50 0.25 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE, INSTANTANEOUS FORWARD CURRENT AMPERES 1.25 AMPERES AVERAGE FORWARD RECTIFIED CURRENT FIG.2 -- TYPICAL FORWARD CURRENT DERATING CURVE 1.0 0.1 0.01 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 INSTANTANEOUS FORWARD VOLTAGE, VOLTS 200 100 30 20 10 1 5 10 50 NUMBER OF CYCLES AT 60Hz 100 JUNCTION CAPACITANCE,pF 8.3ms Single Half Sine-Wave 40 0 T J =25 Pulse Width=300 µ S FIG.5 -- TYPICAL JUNCTION CAPACITANCE 50 AMPERES PEAK FORWARD SURGE CURRENT FIG.4 --PEAK FORWARD SURGE CURRENT 10 60 40 20 10 TJ =25 6 4 2 1 0.1 0.2 0.4 1 2 4 10 20 40 100 REVERSE VOLTAGE,VOLTS www.diode.kr