TSC MBR2590CT Dual common cathode schottky rectifier Datasheet

MBR2535CT thru MBR25150CT
Taiwan Semiconductor
CREAT BY ART
FEATURES
Dual Common Cathode Schottky Rectifier
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
TO-220AB
MECHANICAL DATA
Case: TO-220AB
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity: As marked
Mounting torque: 5 in-lbs maximum
Weight: 1.9 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
PARAMETER
SYMBOL
MBR
MBR
MBR
MBR
MBR
MBR
MBR
2535
2545
2550
2560
2590
CT
CT
CT
CT
CT
CT
CT
25100 25150
UNIT
Maximum repetitive peak reverse voltage
VRRM
35
45
50
60
90
100
150
V
Maximum RMS voltage
VRMS
24
31
35
42
63
70
105
V
Maximum DC blocking voltage
VDC
35
45
50
60
90
100
150
V
Maximum average forward rectified current
IF(AV)
25
A
Peak repetitive forward current
(Rated VR, square wave, 20KHz)
IFRM
25
A
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
200
A
Peak repetitive reverse surge current (Note 1)
IRRM
Maximum instantaneous forward voltage (Note 2)
IF=12.5A, TJ=25℃
IF=12.5A, TJ=125℃
IF=25A, TJ=25℃
IF=25A, TJ=125℃
Maximum reverse current @ rated VR
TJ=25 ℃
TJ=125 ℃
VF
IR
1
0.5
A
-
0.75
0.85
0.95
-
0.65
0.75
0.92
0.82
-
0.92
1.02
0.73
-
0.88
0.98
0.2
0.2
0.1
0.1
15
10
7.5
5
V
mA
Voltage rate of change (Rated VR)
dV/dt
10000
Typical thermal resistance
RθJC
1.0
TJ
- 55 to +150
O
C
TSTG
- 55 to +150
O
C
Operating junction temperature range
Storage temperature range
V/μs
O
Note 1: tp = 2.0 μs, 1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
Document Number: DS_D1308065
Version: I13
C/W
MBR2535CT thru MBR25150CT
Taiwan Semiconductor
ORDERING INFORMATION
AEC-Q101
PART NO.
PACKING CODE
QUALIFIED
MBR25xxCT
(Note 1)
Prefix "H"
C0
GREEN COMPOUND
CODE
PACKAGE
PACKING
TO-220AB
50 / Tube
Suffix "G"
Note 1: "xx" defines voltage from 35V (MBR2535CT) to 150V (MBR25150CT)
EXAMPLE
AEC-Q101
PREFERRED P/N
PART NO.
PACKING CODE
MBR2560CT C0
MBR2560CT
C0
MBR2560CT C0G
MBR2560CT
C0
MBR2560CTHC0
MBR2560CT
QUALIFIED
H
GREEN COMPOUND
DESCRIPTION
CODE
Green compound
G
AEC-Q101 qualified
C0
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted)
FIG. 2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT PER LEG
AVERAGE FORWARD CURRENT (A)
30
25
20
15
10
RESISTIVE OR
INDUCTIVELOAD
WITH HEATSINK
5
0
0
50
100
150
PEAK FORWARD SURGE CURRENT (A)
FIG.1- FORWARD CURRENT DERATING CURVE
250
8.3ms Single Half Sine Wave
JEDEC Method
225
200
175
150
125
100
1
10
FIG. 3- TYPICAL INSTATANEOUS FORWARD
CHARACTERISTICS PER LEG
1
TJ=25℃
Pulse Width=300μs
1% Duty Cycle
0.1
MBR2535CT-MBR2545CT
MBR2550CT-MBR2560CT
MBR2590CT-MBR25150CT
0.01
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
FORWARD VOLTAGE (V)
Document Number: DS_D1308065
1
1.1 1.2
INSTANTANEOUS REVERSE CURRENT (mA)
INSTANTANEOUS FORWARD CURRENT (A)
TJ=125℃
FIG. 4- TYPICAL REVERSE CHARACTERISTICS
PER LEG
100
100
10
100
NUMBER OF CYCLES AT 60 Hz
CASE TEMPERATURE (oC)
10
TJ=125℃
1
TJ=25℃
0.1
0.01
MBR2535CT-MBR2545CT
MBR2550CT-MBR25150CT
0.001
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Version: I13
MBR2535CT thru MBR25150CT
Taiwan Semiconductor
FIG. 5- TYPICAL JUNCTION CAPACITANCE PER LEG
100
MBR2535CT-MBR2545CT
MBR2550CT-MBR25150CT
TRANSIENT THERMAL
IMPEDANCE (℃/W)
JUNCTION CAPACITANCE (pF) A
10000
FIG. 6- TYPICAL TRANSIENT THERMAL IMPEDANCE
PER LEG
f=1.0MHz
Vsig=50mVp-p
10
1000
100
1
0.1
0.1
1
10
100
0.01
0.1
REVERSE VOLTAGE (V)
1
10
100
T-PULSE DURATION(sec)
PACKAGE OUTLINE DIMENSIONS
DIM.
Unit (mm)
Unit (inch)
Min
Max
Min
Max
A
-
10.50
-
0.413
B
2.62
3.44
0.103
0.135
C
2.80
4.20
0.110
0.165
D
0.68
0.94
0.027
0.037
E
3.54
4.00
0.139
0.157
F
14.60
16.00
0.575
0.630
G
13.19
14.79
0.519
0.582
H
2.41
2.67
0.095
0.105
I
4.42
4.76
0.174
0.187
J
1.14
1.40
0.045
0.055
K
5.84
6.86
0.230
0.270
L
2.20
2.80
0.087
0.110
M
0.35
0.64
0.014
0.025
MARKING DIAGRAM
P/N
= Marking Code
G
= Green Compound
YWW
= Date Code
F
= Factory Code
Document Number: DS_D1308065
Version: I13
MBR2535CT thru MBR25150CT
Taiwan Semiconductor
CREAT BY ART
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D1308065
Version: I13
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