MBR2535CT thru MBR25150CT Taiwan Semiconductor CREAT BY ART FEATURES Dual Common Cathode Schottky Rectifier - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition TO-220AB MECHANICAL DATA Case: TO-220AB Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - halogen-free Base P/N with prefix "H" on packing code - AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test, with prefix "H" on packing code meet JESD 201 class 2 whisker test Polarity: As marked Mounting torque: 5 in-lbs maximum Weight: 1.9 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER SYMBOL MBR MBR MBR MBR MBR MBR MBR 2535 2545 2550 2560 2590 CT CT CT CT CT CT CT 25100 25150 UNIT Maximum repetitive peak reverse voltage VRRM 35 45 50 60 90 100 150 V Maximum RMS voltage VRMS 24 31 35 42 63 70 105 V Maximum DC blocking voltage VDC 35 45 50 60 90 100 150 V Maximum average forward rectified current IF(AV) 25 A Peak repetitive forward current (Rated VR, square wave, 20KHz) IFRM 25 A Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 200 A Peak repetitive reverse surge current (Note 1) IRRM Maximum instantaneous forward voltage (Note 2) IF=12.5A, TJ=25℃ IF=12.5A, TJ=125℃ IF=25A, TJ=25℃ IF=25A, TJ=125℃ Maximum reverse current @ rated VR TJ=25 ℃ TJ=125 ℃ VF IR 1 0.5 A - 0.75 0.85 0.95 - 0.65 0.75 0.92 0.82 - 0.92 1.02 0.73 - 0.88 0.98 0.2 0.2 0.1 0.1 15 10 7.5 5 V mA Voltage rate of change (Rated VR) dV/dt 10000 Typical thermal resistance RθJC 1.0 TJ - 55 to +150 O C TSTG - 55 to +150 O C Operating junction temperature range Storage temperature range V/μs O Note 1: tp = 2.0 μs, 1.0KHz Note 2: Pulse test with PW=300μs, 1% duty cycle Document Number: DS_D1308065 Version: I13 C/W MBR2535CT thru MBR25150CT Taiwan Semiconductor ORDERING INFORMATION AEC-Q101 PART NO. PACKING CODE QUALIFIED MBR25xxCT (Note 1) Prefix "H" C0 GREEN COMPOUND CODE PACKAGE PACKING TO-220AB 50 / Tube Suffix "G" Note 1: "xx" defines voltage from 35V (MBR2535CT) to 150V (MBR25150CT) EXAMPLE AEC-Q101 PREFERRED P/N PART NO. PACKING CODE MBR2560CT C0 MBR2560CT C0 MBR2560CT C0G MBR2560CT C0 MBR2560CTHC0 MBR2560CT QUALIFIED H GREEN COMPOUND DESCRIPTION CODE Green compound G AEC-Q101 qualified C0 RATINGS AND CHARACTERISTICS CURVES (TA=25℃ unless otherwise noted) FIG. 2- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PER LEG AVERAGE FORWARD CURRENT (A) 30 25 20 15 10 RESISTIVE OR INDUCTIVELOAD WITH HEATSINK 5 0 0 50 100 150 PEAK FORWARD SURGE CURRENT (A) FIG.1- FORWARD CURRENT DERATING CURVE 250 8.3ms Single Half Sine Wave JEDEC Method 225 200 175 150 125 100 1 10 FIG. 3- TYPICAL INSTATANEOUS FORWARD CHARACTERISTICS PER LEG 1 TJ=25℃ Pulse Width=300μs 1% Duty Cycle 0.1 MBR2535CT-MBR2545CT MBR2550CT-MBR2560CT MBR2590CT-MBR25150CT 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 FORWARD VOLTAGE (V) Document Number: DS_D1308065 1 1.1 1.2 INSTANTANEOUS REVERSE CURRENT (mA) INSTANTANEOUS FORWARD CURRENT (A) TJ=125℃ FIG. 4- TYPICAL REVERSE CHARACTERISTICS PER LEG 100 100 10 100 NUMBER OF CYCLES AT 60 Hz CASE TEMPERATURE (oC) 10 TJ=125℃ 1 TJ=25℃ 0.1 0.01 MBR2535CT-MBR2545CT MBR2550CT-MBR25150CT 0.001 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Version: I13 MBR2535CT thru MBR25150CT Taiwan Semiconductor FIG. 5- TYPICAL JUNCTION CAPACITANCE PER LEG 100 MBR2535CT-MBR2545CT MBR2550CT-MBR25150CT TRANSIENT THERMAL IMPEDANCE (℃/W) JUNCTION CAPACITANCE (pF) A 10000 FIG. 6- TYPICAL TRANSIENT THERMAL IMPEDANCE PER LEG f=1.0MHz Vsig=50mVp-p 10 1000 100 1 0.1 0.1 1 10 100 0.01 0.1 REVERSE VOLTAGE (V) 1 10 100 T-PULSE DURATION(sec) PACKAGE OUTLINE DIMENSIONS DIM. Unit (mm) Unit (inch) Min Max Min Max A - 10.50 - 0.413 B 2.62 3.44 0.103 0.135 C 2.80 4.20 0.110 0.165 D 0.68 0.94 0.027 0.037 E 3.54 4.00 0.139 0.157 F 14.60 16.00 0.575 0.630 G 13.19 14.79 0.519 0.582 H 2.41 2.67 0.095 0.105 I 4.42 4.76 0.174 0.187 J 1.14 1.40 0.045 0.055 K 5.84 6.86 0.230 0.270 L 2.20 2.80 0.087 0.110 M 0.35 0.64 0.014 0.025 MARKING DIAGRAM P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Document Number: DS_D1308065 Version: I13 MBR2535CT thru MBR25150CT Taiwan Semiconductor CREAT BY ART Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied,to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_D1308065 Version: I13