TO -2 20A C BYW29E-200 Ultrafast power diode Rev. 5 — 20 March 2012 Product data sheet 1. Product profile 1.1 General description Ultrafast power diode in a SOD59 (2-lead TO-220AC) plastic package. 1.2 Features and benefits Fast switching Low thermal resistance Guaranteed ESD capability Rugged: reverse voltage surge capability High thermal cycling performance Low on-state loss Soft recovery minimizes power-consuming oscillations 1.3 Applications Output rectifiers in high-frequency switched-mode power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter VRRM repetitive peak reverse voltage IF(AV) average forward current Conditions Min Typ Max Unit - - 200 V square-wave pulse; δ = 0.5 ; Tmb ≤ 128 °C; see Figure 1; see Figure 2 - - 8 A IF = 8 A; Tj = 150 °C; see Figure 4 - 0.8 0.895 V IF = 1 A; VR = 30 V; dIF/dt = 100 A/s; Tj = 25 °C; ramp recovery; see Figure 5; see Figure 7 - 20 25 ns HBM; C = 250 pF; R = 1.5 kΩ - - 8 kV Static characteristics VF forward voltage Dynamic characteristics trr reverse recovery time Electrostatic discharge VESD electrostatic discharge voltage BYW29E-200 NXP Semiconductors Ultrafast power diode 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 K cathode 2 A anode mb mb mounting base; cathode Graphic symbol K mb A 001aaa020 1 2 SOD59 (TO-220AC) 3. Ordering information Table 3. Ordering information Type number BYW29E-200 Package Name Description Version TO-220AC plastic single-ended package; heatsink mounted; 1 mounting hole; 2-lead TO-220AC SOD59 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VRRM repetitive peak reverse voltage - 200 V VRWM crest working reverse voltage - 200 V VR reverse voltage - 200 V IF(AV) average forward current square-wave pulse; δ = 0.5 ; Tmb ≤ 128 °C; see Figure 1; see Figure 2 - 8 A IFRM repetitive peak forward current square-wave pulse; δ = 0.5 ; tp = 25 µs; Tmb ≤ 128 °C - 16 A IFSM non-repetitive peak forward current tp = 8.3 ms; sine-wave pulse; Tj(init) = 25 °C - 88 A tp = 10 ms; sine-wave pulse; Tj(init) = 25 °C - 80 A IRRM repetitive peak reverse current δ = 0.001 ; tp = 2 µs - 0.2 A IRSM non-repetitive peak reverse current tp = 100 µs - 0.2 A Tstg storage temperature -40 150 °C Tj junction temperature - 150 °C - 8 kV Electrostatic discharge VESD electrostatic discharge voltage BYW29E-200 Product data sheet HBM; C = 250 pF; R = 1.5 kΩ All information provided in this document is subject to legal disclaimers. Rev. 5 — 20 March 2012 © NXP B.V. 2012. All rights reserved. 2 of 11 BYW29E-200 NXP Semiconductors Ultrafast power diode 003aaj507 12 δ=1 003aaj508 8 a = 1.57 Ptot (W) Ptot (W) 1.9 2.2 6 0.5 8 2.8 0.2 4.0 4 0.1 4 2 0 Fig 1. 0 4 8 IF(AV) (A) Forward power dissipation as a function of average forward current; square waveform; maximum values BYW29E-200 Product data sheet 0 12 Fig 2. 0 2 4 6 IF(AV) (A) 8 Forward power dissipation as a function of average forward current; sinusoidal waveform; maximum values All information provided in this document is subject to legal disclaimers. Rev. 5 — 20 March 2012 © NXP B.V. 2012. All rights reserved. 3 of 11 BYW29E-200 NXP Semiconductors Ultrafast power diode 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base see Figure 3 - - 2.7 K/W Rth(j-a) thermal resistance from junction to ambient in free air - 60 - K/W 003aaj513 10 Zth(j-mb) (K/W) 1 10-1 P δ= 10-2 t tp T 10-3 10-6 Fig 3. tp T 10-5 10-4 10-3 10-2 10-1 1 tp (s) 10 Transient thermal impedance from junction to mounting base as a function of pulse width BYW29E-200 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 20 March 2012 © NXP B.V. 2012. All rights reserved. 4 of 11 BYW29E-200 NXP Semiconductors Ultrafast power diode 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit IF = 8 A; Tj = 25 °C; see Figure 4 - 0.92 1.05 V IF = 20 A; Tj = 25 °C; see Figure 4 - 1.1 1.3 V IF = 8 A; Tj = 150 °C; see Figure 4 - 0.8 0.895 V VR = 200 V; Tj = 25 °C - 2 10 µA VR = 200 V; Tj = 100 °C - 0.2 0.6 mA Static characteristics forward voltage VF reverse current IR Dynamic characteristics Qr recovered charge IF = 2 A; VR = 30 V; dIF/dt = 20 A/s; Tj = 25 °C; see Figure 5; see Figure 6 - 4 11 nC trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 100 A/s; ramp recovery; Tj = 25 °C; see Figure 5; see Figure 7 - 20 25 ns IF = 0.5 A; IR = 1 A; step recovery; IR(meas) = 0.25 A; Tj = 25 °C; see Figure 8 - 15 20 ns IF = 1 A; dIF/dt = 10 A/s; Tj = 25 °C; see Figure 9 - 1 - V forward recovery voltage VFRM 003aaj509 30 dlF IF dt IF (A) trr 20 time (1) (2) 25 % (3) 10 Qr IR 100 % IRM 003aac562 0 Fig 4. 0 0.5 1 1.5 VF (V) 2 Forward current as a function of forward voltage BYW29E-200 Product data sheet Fig 5. Reverse recovery definitions; ramp recovery All information provided in this document is subject to legal disclaimers. Rev. 5 — 20 March 2012 © NXP B.V. 2012. All rights reserved. 5 of 11 BYW29E-200 NXP Semiconductors Ultrafast power diode 003aaj510 103 003aaj511 103 Qr (nC) trr (ns) 102 (2) 102 (4) (3) (2) (1) (1) 10 1 Fig 6. 10 10 1 dIF/dt (A/μs) 1 102 Recovered charge as a function of rate of change of forward current; maximum values Fig 7. 1 10 102 dIF/dt (A/μs) Reverse recovery time as a function of rate of change of forward current; maximum values IF IF IF trr time time 0.25 x IR VF Qr VFRM IR IR VF 003aac563 time 001aab912 Fig 8. Reverse recovery definitions; step recovery BYW29E-200 Product data sheet Fig 9. Forward recovery definitions All information provided in this document is subject to legal disclaimers. Rev. 5 — 20 March 2012 © NXP B.V. 2012. All rights reserved. 6 of 11 BYW29E-200 NXP Semiconductors Ultrafast power diode 7. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 2-lead TO-220AC SOD59 E A A1 P q D1 D H Q b1 L 1 2 c b e 0 5 scale Dimensions Unit mm max nom min 10 mm A A1 b b1(1) c D D1 E 4.7 1.40 0.95 1.7 0.65 15.8 6.8 10.30 4.3 1.15 0.70 1.3 0.45 15.6 6.4 9.65 e H 5.08 (REF) P Q q 16.25 15.0 L 3.7 2.6 2.9 15.70 12.5 3.5 2.2 2.7 Note 1. Protruded dambar are included in the dimension. Outline version SOD59 sod059_po References IEC JEDEC JEITA 2-lead TO-220AC European projection Issue date 09-08-17 09-08-25 Fig 10. Package outline SOD59 (TO-220AC) BYW29E-200 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 20 March 2012 © NXP B.V. 2012. All rights reserved. 7 of 11 BYW29E-200 NXP Semiconductors Ultrafast power diode 8. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes BYW29E-200 v.5 20120320 Product data sheet - BYW29E_SERIES v.4 Modifications: BYW29E_SERIES v.4 BYW29E-200 Product data sheet • The format of this document has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. 20010801 Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 5 — 20 March 2012 BYW29E_SERIES v.3 © NXP B.V. 2012. All rights reserved. 8 of 11 BYW29E-200 NXP Semiconductors Ultrafast power diode 9. Legal information 9.1 Data sheet status Document status[1] [2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URLhttp://www.nxp.com. 9.2 Definitions Preview — The document is a preview version only. The document is still subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Draft — The document is a draft version only. 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This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 5 — 20 March 2012 © NXP B.V. 2012. All rights reserved. 9 of 11 BYW29E-200 NXP Semiconductors Ultrafast power diode Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published athttp://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. 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The English version shall prevail in case of any discrepancy between the translated and English versions. 9.4 Trademarks Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. Adelante,Bitport,Bitsound,CoolFlux,CoReUse,DESFire,EZ-HV,FabKey,G reenChip,HiPerSmart,HITAG,I²C-bus logo,ICODE,I-CODE,ITEC,Labelution,MIFARE,MIFARE Plus,MIFARE Ultralight,MoReUse,QLPAK,Silicon Tuner,SiliconMAX,SmartXA,STARplug,TOPFET,TrenchMOS,TriMedia andUCODE — are trademarks of NXP B.V. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the HD Radio andHD Radio logo — are trademarks of iBiquity Digital Corporation. 10. Contact information For more information, please visit:http://www.nxp.com For sales office addresses, please send an email to:[email protected] BYW29E-200 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 20 March 2012 © NXP B.V. 2012. All rights reserved. 10 of 11 BYW29E-200 NXP Semiconductors Ultrafast power diode 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2 Thermal characteristics . . . . . . . . . . . . . . . . . . .4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . .8 Legal information. . . . . . . . . . . . . . . . . . . . . . . . .9 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . .9 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .10 Contact information. . . . . . . . . . . . . . . . . . . . . .10 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 20 March 2012 Document identifier: BYW29E-200