CEL NE650496 L&s band medium power gaas mesfet Datasheet

L&S BAND MEDIUM POWER GaAs MESFET NE6500496
ABSOLUTE MAXIMUM RATINGS
FEATURES
(TC= 25 °C unless otherwise noted)
• HIGH OUTPUT POWER: 4 W
SYMBOLS
PARAMETERS
UNITS
RATINGS
• HIGH LINEAR GAIN: 11.5 dB
VDSX
Drain to Source Voltage
V
15
• HIGH EFFICIENCY (PAE): 45%
VGDX
Gate to Drain Voltage
V
-18
• INDUSTRY STANDARD PACKAGING
VGSX
DESCRIPTION
The NE6500496 is a medium power GaAs MESFET designed
for up to a 4 W output stage or as a driver for high power
devices. The device has no internal matching and can be used
from UHF frequencies up to 3.0 GHz. The chips used in this
series offer superior reliability and consistent performance for
which NEC microwave semiconductors are known.
Gate to Source Voltage
V
-12
IDS
Drain Current
A
4.5
IGS
Gate Current
mA
25
PT
Total Power Dissipation
W
25
TCH
Channel Temperature
°C
175
TSTG
Storage Temperature
°C
-65 to +175
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE 96
5.2±0.3
The NE6500496 Transistors are manufactured to NEC's stringent quality assurance standards to ensure highest reliability
and consistent superior performance.
1.0±0.1
4.0 MIN BOTH LEADS
Gate
φ2.2±0.2
4.3±0.2
4.0±0.1
RECOMMENDED OPERATING LIMITS
SYMBOLS
PARAMETERS
VDS
Drain to Source Voltage
TCH
Channel Temperature
°C
130
Gain Compression
dB
3.0
Gate Resistance
Ω
200
GCOMP
RG
UNITS MIN
Source
TYP MAX
V
10
Drain
10
0.6±0.1
5.2±0.3
11.0±0.15
15.0±0.3
+.06
0.1 -.02
0.2 MAX
5.0 MAX
1.7±0.15
ELECTRICAL CHARACTERISTICS (TC
Functional
Characteristics
Electrical DC
Characteristics
NE6500496
UNITS
MIN
TYP
dBm
35.5
36.0
PIN = 26.0 dBm
Linear Gain
dB
11.0
11.5
VDS = 10 V; IDSQ = 400 mA
Power Added Efficiency
%
45
f = 2.3 GHz; RG = 200 Ω
IDS
Drain Source Current
A
0.8
IDSS
POUT
GL
ηADD
CHARACTERISTICS
1.2
= 25°C)
PART NUMBER
SYMBOLS
6.0±0.2
Power Out at Fixed Input Power
MAX
TEST CONDITIONS
Saturated Drain Current
A
1.0
2.3
3.5
VDS = 2.5 V; VGS = 0 V
VP
Pinch-off Voltage
V
-3.5
-2.0
-0.5
VDS = 2.5 V; IDS = 15 mA
gm
Transconductance
RTH
Thermal Resistance
mS
1300
°C/W
5.0
VDS = 2.5 V; IDS = 1 mA
6.0
Channel to Case
California Eastern Laboratories
NE6500496
TYPICAL SCATTERING PARAMETERS (TA = 25 °C)
+90˚
j 50
j 25
S11
4.05 GHz
S22
4.05 GHz
+60˚
+120˚
j 100
S21
0.1 GHz
+150˚
j10
+30˚
S12
5.1 GHz
S21
5.1 GHz
±180˚
0
S22
0.05 GHz
S12
0.1 GHz
0˚
-150˚
-j 10
S11
0.05 GHz
-j 25
-j 100
-30˚
-60˚
-120˚
-90˚
-j 50
S21 MAG:
4.0 / DIV., 20.0 FS
S12 MAG:
0.02 / DIV., 0.1 FS
VDS = 10.0 V, IDS = 400 mA
FREQUENCY
S11
(GHz)
MAG
0.10
0.20
0.40
0.50
1.00
1.50
2.00
2.50
3.00
3.50
4.00
4.50
5.00
0.975
0.956
0.949
0.947
0.945
0.944
0.944
0.944
0.945
0.947
0.950
0.940
0.933
S21
ANG
-80.100
-118.900
-148.400
-155.300
-171.200
-178.200
176.800
172.700
168.700
165.000
160.500
155.300
149.600
MAG
17.360
11.506
6.420
5.212
2.691
1.834
1.408
1.166
1.008
0.901
0.838
0.806
0.792
S12
S22
K
ANG
MAG
ANG
MAG
ANG
137.500
116.500
98.700
93.800
77.900
66.500
55.800
46.200
36.900
28.700
20.000
10.900
0.400
0.011
0.015
0.016
0.017
0.019
0.022
0.026
0.031
0.039
0.046
0.056
0.059
0.068
55.300
39.800
28.900
26.700
32.400
38.500
43.400
46.000
46.700
47.000
41.300
37.300
34.000
0.601
0.657
0.687
0.692
0.702
0.708
0.712
0.728
0.753
0.761
0.769
0.775
0.791
-172.500
-175.000
-179.500
178.900
173.300
168.900
163.500
157.900
152.900
149.200
144.600
138.600
131.200
MAG1
(dB)
0.131
0.230
0.369
0.426
0.763
0.968
1.076
1.086
0.986
0.921
0.771
0.812
0.772
31.982
28.848
26.034
24.866
21.512
19.210
15.651
13.965
14.124
12.920
11.751
11.355
10.662
Note:
1. Gain Calculations:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM
10/16/2000
DATA SUBJECT TO CHANGE WITHOUT NOTICE
Similar pages