L&S BAND MEDIUM POWER GaAs MESFET NE6500496 ABSOLUTE MAXIMUM RATINGS FEATURES (TC= 25 °C unless otherwise noted) • HIGH OUTPUT POWER: 4 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH LINEAR GAIN: 11.5 dB VDSX Drain to Source Voltage V 15 • HIGH EFFICIENCY (PAE): 45% VGDX Gate to Drain Voltage V -18 • INDUSTRY STANDARD PACKAGING VGSX DESCRIPTION The NE6500496 is a medium power GaAs MESFET designed for up to a 4 W output stage or as a driver for high power devices. The device has no internal matching and can be used from UHF frequencies up to 3.0 GHz. The chips used in this series offer superior reliability and consistent performance for which NEC microwave semiconductors are known. Gate to Source Voltage V -12 IDS Drain Current A 4.5 IGS Gate Current mA 25 PT Total Power Dissipation W 25 TCH Channel Temperature °C 175 TSTG Storage Temperature °C -65 to +175 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 96 5.2±0.3 The NE6500496 Transistors are manufactured to NEC's stringent quality assurance standards to ensure highest reliability and consistent superior performance. 1.0±0.1 4.0 MIN BOTH LEADS Gate φ2.2±0.2 4.3±0.2 4.0±0.1 RECOMMENDED OPERATING LIMITS SYMBOLS PARAMETERS VDS Drain to Source Voltage TCH Channel Temperature °C 130 Gain Compression dB 3.0 Gate Resistance Ω 200 GCOMP RG UNITS MIN Source TYP MAX V 10 Drain 10 0.6±0.1 5.2±0.3 11.0±0.15 15.0±0.3 +.06 0.1 -.02 0.2 MAX 5.0 MAX 1.7±0.15 ELECTRICAL CHARACTERISTICS (TC Functional Characteristics Electrical DC Characteristics NE6500496 UNITS MIN TYP dBm 35.5 36.0 PIN = 26.0 dBm Linear Gain dB 11.0 11.5 VDS = 10 V; IDSQ = 400 mA Power Added Efficiency % 45 f = 2.3 GHz; RG = 200 Ω IDS Drain Source Current A 0.8 IDSS POUT GL ηADD CHARACTERISTICS 1.2 = 25°C) PART NUMBER SYMBOLS 6.0±0.2 Power Out at Fixed Input Power MAX TEST CONDITIONS Saturated Drain Current A 1.0 2.3 3.5 VDS = 2.5 V; VGS = 0 V VP Pinch-off Voltage V -3.5 -2.0 -0.5 VDS = 2.5 V; IDS = 15 mA gm Transconductance RTH Thermal Resistance mS 1300 °C/W 5.0 VDS = 2.5 V; IDS = 1 mA 6.0 Channel to Case California Eastern Laboratories NE6500496 TYPICAL SCATTERING PARAMETERS (TA = 25 °C) +90˚ j 50 j 25 S11 4.05 GHz S22 4.05 GHz +60˚ +120˚ j 100 S21 0.1 GHz +150˚ j10 +30˚ S12 5.1 GHz S21 5.1 GHz ±180˚ 0 S22 0.05 GHz S12 0.1 GHz 0˚ -150˚ -j 10 S11 0.05 GHz -j 25 -j 100 -30˚ -60˚ -120˚ -90˚ -j 50 S21 MAG: 4.0 / DIV., 20.0 FS S12 MAG: 0.02 / DIV., 0.1 FS VDS = 10.0 V, IDS = 400 mA FREQUENCY S11 (GHz) MAG 0.10 0.20 0.40 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 4.50 5.00 0.975 0.956 0.949 0.947 0.945 0.944 0.944 0.944 0.945 0.947 0.950 0.940 0.933 S21 ANG -80.100 -118.900 -148.400 -155.300 -171.200 -178.200 176.800 172.700 168.700 165.000 160.500 155.300 149.600 MAG 17.360 11.506 6.420 5.212 2.691 1.834 1.408 1.166 1.008 0.901 0.838 0.806 0.792 S12 S22 K ANG MAG ANG MAG ANG 137.500 116.500 98.700 93.800 77.900 66.500 55.800 46.200 36.900 28.700 20.000 10.900 0.400 0.011 0.015 0.016 0.017 0.019 0.022 0.026 0.031 0.039 0.046 0.056 0.059 0.068 55.300 39.800 28.900 26.700 32.400 38.500 43.400 46.000 46.700 47.000 41.300 37.300 34.000 0.601 0.657 0.687 0.692 0.702 0.708 0.712 0.728 0.753 0.761 0.769 0.775 0.791 -172.500 -175.000 -179.500 178.900 173.300 168.900 163.500 157.900 152.900 149.200 144.600 138.600 131.200 MAG1 (dB) 0.131 0.230 0.369 0.426 0.763 0.968 1.076 1.086 0.986 0.921 0.771 0.812 0.772 31.982 28.848 26.034 24.866 21.512 19.210 15.651 13.965 14.124 12.920 11.751 11.355 10.662 Note: 1. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM 10/16/2000 DATA SUBJECT TO CHANGE WITHOUT NOTICE