HFA08TB120 ® Pb HFA08TB120 Pb Free Plating Product 10 Ampere,1200 Volt SwitchMode Single Fast Recovery Epitaxial Diode TO-220AC/TO-220C-2P APPLICATION · · · · · · · Cathode(Bottom Side Metal Heatsink) Freewheeling, Snubber, Clamp Inversion Welder PFC Plating Power Supply Ultrasonic Cleaner and Welder Converter & Chopper UPS Anode PRODUCT FEATURE · Ultrafast Recovery Time Cathode Internal Configuration · Soft Recovery Characteristics Base Backside · Low Recovery Loss · Low Forward Voltage · High Surge Current Capability · Low Leakage Current GENERAL DESCRIPTION HFA08TB120 using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic. ABSOLUTE MAXIMUM RATINGS Symbol T C =25°C unless otherwise specified Parameter Test Conditions Values Unit VR Maximum D.C. Reverse Voltage 1200 V V RRM Maximum Repetitive Reverse Voltage 1200 V I F(AV) Average Forward Current 10 A I F(RMS) RMS Forward Current T C =110°C 15 A I FSM Non-Repetitive Surge Forward Current T J =45°C, t=10ms, 50Hz, Sine 100 A PD Power Dissipation 70 W TJ Junction Temperature -40 to +150 °C T STG Storage Temperature Range -40 to +150 °C Torque Module-to-Sink Recommended（M3） 1.1 N·m R θJC Thermal Resistance Junction-to-Case 1.8 °C /W 2.2 g T C =110°C Weight ELECTRICAL CHARACTERISTICS Symbol Parameter T C =25°C unless otherwise specified Test Conditions Min. Typ. Max. Unit V R =1200V -- -- 100 µA V R =1200V, T J =125°C -- -- 500 µA I F =10A -- 2.4 -- V I F =10A, T J =125°C -- 1.85 -- V I RM Reverse Leakage Current VF Forward Voltage t rr Reverse Recovery Time I F =1A, V R =30V, di F /dt=-200A/μs -- 22 -- ns t rr Reverse Recovery Time V R =600V, I F =10A -- 44 -- ns I RRM Max. Reverse Recovery Current di F /dt=-200A/μs, T J =25°C -- 3.5 -- A t rr Reverse Recovery Time V R =600V, I F =10A -- 220 -- ns I RRM Max. Reverse Recovery Current di F /dt=-200A/μs, T J =125°C -- 6.5 -- A Rev.05 © 2006 Thinki Semiconductor Co.,Ltd. Page 1/3 http://www.thinkisemi.com/ HFA08TB120 ® 350 20 VR=600V TJ =125°C 300 16 250 12 trr (ns) IF (A) TJ =125°C 8 IF=20A 200 150 IF=10A 100 IF=5A TJ =25°C 4 50 0 0 0 1.5 2.0 2.5 3.0 3.5 VF（V） Fig1. Forward Voltage Drop vs Forward Current 0.5 1.0 25 0 200 400 600 800 1000 diF/dt（A/μs） Fig2. Reverse Recovery Time vs diF/dt 1500 VR=600V TJ =125°C 15 IF=10A IF=5A 10 IF=20A 1200 IF=20A Qrr (nc) IRRM (A) 20 VR=600V TJ =125°C 900 600 IF=10A IF=5A 5 300 0 0 0 400 600 1000 800 diF/dt（A/μs） Fig3. Reverse Recovery Current vs diF/dt 200 1.4 0 200 400 600 800 1000 diF/dt（A/μs） Fig4. Reverse Recovery Charge vs diF/dt 10 1.2 1 ZthJC (K/W) 1.0 Kf 0.8 0.6 IRRM 0.4 0.2 10 -1 10 -2 Duty 0.5 0.2 0.1 0.05 Single Pulse trr Qrr 0 0 25 50 100 125 150 75 TJ (°C) Fig5. Dynamic Parameters vs Junction Temperature Rev.05 © 2006 Thinki Semiconductor Co.,Ltd. 10 -3 10 -4 -3 -2 -1 10 10 10 1 Rectangular Pulse Duration (seconds) Fig6. Transient Thermal Impedance Page 2/3 http://www.thinkisemi.com/ HFA08TB120 ® IF trr IRRM dIF/dt 0.25 IRRM Qrr 0.9 IRRM Fig7. Diode Reverse Recovery Test Circuit and Waveform Dimensions in Millimeters Fig8. Package Outline Rev.05 © 2006 Thinki Semiconductor Co.,Ltd. Page 3/3 http://www.thinkisemi.com/