Databook.fxp 1/14/99 1:50 PM Page B-31 B-31 01/99 IF1330 N-Channel Silicon Junction Field-Effect Transistor ¥ Low-Noise, High Gain Amplifier Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating Storage Temperature Range At 25°C free air temperature: IF1330 Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) IGSS VGS(OFF) IDSS Process NJ132H Max – 20 – 0.35 5 – 20 V 10 mA 225 mW 1.8 mW/°C – 65°C to 200°C – 0.1 – 1.5 20 Unit Test Conditions V IG = – 1 µA, VDS = ØV nA V mA VDS = ØV, VGS = – 10V VDS = 10V, ID = 0.5 nA VDS = 10V, VGS = ØV mS VDS = 10V, ID = 5 mA f = 1 kHz Dynamic Electrical Characteristics Common Source Forward Transconductance gfs Common Source Input Capacitance Ciss 20 pF VDS = 10V, ID = 5 mA f = 1 MHz Common Source Reverse Transfer Capacitance Crss 5 pF VDS = 10V, ID = 5 mA f = 1 MHz nV/√Hz VDS = 10V, ID = 5 mA f = 1 kHz 10 Typ Equivalent Short Circuit Input Noise Voltage ēN TOÐ236AB Package Pin Configuration Dimensions in Inches (mm) 1 Drain, 2 Source, 3 Gate www.interfet.com 2.5 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375