ON BVSS138LT1G Power mosfet Datasheet

BSS138L, BVSS138L
Power MOSFET
200 mA, 50 V
N−Channel SOT−23
Typical applications are DC−DC converters, power management in
portable and battery−powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
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200 mA, 50 V
RDS(on) = 3.5 W
Features
• Low Threshold Voltage (VGS(th): 0.5 V−1.5 V) Makes it Ideal for
Low Voltage Applications
N−Channel
3
• Miniature SOT−23 Surface Mount Package Saves Board Space
• BVSS Prefix for Automotive and Other Applications Requiring
•
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
1
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
2
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
50
Vdc
Gate−to−Source Voltage − Continuous
VGS
± 20
Vdc
Drain Current
− Continuous @ TA = 25°C
− Pulsed Drain Current (tp ≤ 10 ms)
ID
200
800
Rating
mA
IDM
PD
225
mW
Operating and Storage Temperature
Range
TJ, Tstg
− 55 to 150
°C
RqJA
556
°C/W
TL
260
°C
Maximum Lead Temperature for
Soldering Purposes, for 10 seconds
1
2
Total Power Dissipation @ TA = 25°C
Thermal Resistance,
Junction−to−Ambient
MARKING
DIAGRAM
3
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
J1 MG
G
SOT−23
CASE 318
STYLE 21
1
J1
= Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Package
Shipping†
BSS138LT1G
SOT−23
(Pb−Free)
3000 / Tape & Reel
BVSS138LT1G
SOT−23
(Pb−Free)
3000 / Tape & Reel
BSS138LT3G
SOT−23
(Pb−Free)
10,000 / Tape & Reel
BVSS138LT3G
SOT−23
(Pb−Free)
10,000 / Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
October, 2016 − Rev. 9
1
Publication Order Number:
BSS138LT1/D
BSS138L, BVSS138L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
50
−
−
Vdc
−
−
−
−
−
−
0.1
0.5
5.0
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 mAdc)
mAdc
Zero Gate Voltage Drain Current
(VDS = 25 Vdc, VGS = 0 Vdc, 25°C)
(VDS = 50 Vdc, VGS = 0 Vdc, 25°C)
(VDS = 50 Vdc, VGS = 0 Vdc, 150°C)
IDSS
Gate−Source Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS
−
−
±0.1
mAdc
Gate−Source Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
VGS(th)
0.5
−
1.5
Vdc
Static Drain−to−Source On−Resistance
(VGS = 2.75 Vdc, ID < 200 mAdc, TA = −40°C to +85°C)
(VGS = 5.0 Vdc, ID = 200 mAdc)
rDS(on)
−
−
5.6
−
10
3.5
gfs
100
−
−
mmhos
pF
ON CHARACTERISTICS (Note 1)
Forward Transconductance
(VDS = 25 Vdc, ID = 200 mAdc, f = 1.0 kHz)
W
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1 MHz)
Ciss
−
40
50
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1 MHz)
Coss
−
12
25
Transfer Capacitance
(VDG = 25 Vdc, VGS = 0, f = 1 MHz)
Crss
−
3.5
5.0
td(on)
−
−
20
td(off)
−
−
20
SWITCHING CHARACTERISTICS (Note 2)
Turn−On Delay Time
Turn−Off Delay Time
(VDD = 30 Vdc, ID = 0.2 Adc,)
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
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2
BSS138L, BVSS138L
TYPICAL ELECTRICAL CHARACTERISTICS
0.8
0.9
VGS = 3.5 V
TJ = 25°C
I D , DRAIN CURRENT (AMPS)
I D , DRAIN CURRENT (AMPS)
VGS = 3.25 V
0.6
VGS = 3.0 V
0.5
VGS = 2.75 V
0.4
VGS = 2.5 V
0.3
0.2
0.1
0
VDS = 10 V
0.8
0.7
- 55°C
0.7
150°C
0.6
0.5
0.4
0.3
0.2
0.1
0
1
0
3
2
4
5
6
7
9
8
10
0
1.5
2
2.5
3.5
3
4
4.5
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
Figure 1. On−Region Characteristics
2.2
1.25
ID = 1.0 mA
2
Vgs(th) , VARIANCE (VOLTS)
VGS = 10 V
ID = 0.8 A
1.8
1.6
VGS = 4.5 V
ID = 0.5 A
1.4
1.2
1
1.125
1
0.875
0.8
0.6
-55
-5
45
95
0.75
-55
145
-30
-5
45
20
95
70
120
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. On−Resistance Variation with
Temperature
Figure 4. Threshold Voltage Variation
with Temperature
145
1.0E-5
10
VDS = 40 V
TJ = 25°C
IDSS, DRAIN-TO-SOURCE LEAKAGE (A)
RDS(on) , DRAIN-TO-SOURCE RESISTANCE
(NORMALIZED)
1
0.5
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
25°C
8
6
4
ID = 200 mA
2
1.0E-6
150°C
125°C
1.0E-7
1.0E-8
1.0E-9
0
0
500
1000
1500
2000
2500
0
3000
QT, TOTAL GATE CHARGE (pC)
5
10
15
20
25
30
35
40
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 5. Gate Charge
Figure 6. IDSS
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3
45
50
BSS138L, BVSS138L
10
VGS = 2.5 V
9
8
150°C
7
6
5
25°C
4
-55°C
3
2
1
0
0.1
0.05
0.2
0.15
0.25
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
TYPICAL ELECTRICAL CHARACTERISTICS
8
VGS = 2.75 V
7
150°C
6
5
4
25°C
3
2
-55°C
1
0
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
VGS = 4.5 V
150°C
5
4.5
4
3.5
3
25°C
2.5
2
-55°C
1.5
1
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.45
0.4
0.5
4.5
VGS = 10 V
3.5
3
2.5
25°C
2
-55°C
1.5
1
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
ID, DRAIN CURRENT (AMPS)
Figure 10. On−Resistance versus Drain
Current
Figure 9. On−Resistance versus Drain Current
1
120
VGS = 2.75 V
TJ = 25°C
f = 1 MHz
100
TJ = 150°C
0.1
25°C
-55°C
C, CAPACITANCE (pF)
I D , DIODE CURRENT (AMPS)
150°C
4
ID, DRAIN CURRENT (AMPS)
0.01
80
60
Ciss
40
Coss
20
0.001
0.25
Figure 8. On−Resistance versus Drain Current
6
0
0.2
0.15
ID, DRAIN CURRENT (AMPS)
Figure 7. On−Resistance versus Drain Current
5.5
0.1
0.05
ID, DRAIN CURRENT (AMPS)
Crss
0
0.2
0.4
0.6
0.8
1.0
0
1.2
0
5
10
15
20
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
VSD, DIODE FORWARD VOLTAGE (VOLTS)
Figure 11. Body Diode Forward Voltage
Figure 12. Capacitance
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4
25
BSS138L, BVSS138L
IDS, DRAIN−TO−SOURCE CURRENT (A)
TYPICAL ELECTRICAL CHARACTERISTICS
1
TA = 25°C
VGS ≤ 10 V
1 ms
10 ms
0.1
0.01
0.001
0.1
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
10
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 13. Safe Operating Area
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5
100
BSS138L, BVSS138L
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
0.25
3
E
1
2
T
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
DIM
A
A1
b
c
D
E
e
L
L1
HE
T
L
3X b
L1
VIEW C
e
TOP VIEW
A
A1
SIDE VIEW
c
SEE VIEW C
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0°
INCHES
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10°
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT
3X
2.90
3X
0.90
0.95
PITCH
0.80
DIMENSIONS: MILLIMETERS
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BSS138LT1/D