AVAGO MGA-81563-BLKG 0.1â 6 ghz 3 v, 14 dbm amplifier lead-free option available Datasheet

MGA-81563
0.1–6 GHz 3 V, 14 dBm Amplifier
Data Sheet
Description
Features
Avago’s MGA-81563 is an economical, easy-to-use GaAs
MMIC amplifier that offers excellent power and low noise
figure for applications from 0.1 to 6 GHz. Packaged in
an ultra-miniature SOT-363 package, it requires half the
board space of a SOT-143 package.
x Lead-free Option Available
The output of the amplifier is matched to 50Ω (better
than 2.1:1 VSWR) across the entire bandwidth. The input is
partially matched to 50Ω (better than 2.5:1 VSWR) below
4 GHz and fully matched to 50Ω (better than 2:1 VSWR)
above. A simple series inductor can be added to the input to improve the input match below 4 GHz. The amplifier allows a wide dynamic range by offering a 2.7 dB NF
coupled with a +27 dBm Output IP3.
x 2.8 dB Noise Figure at 2.0 GHz
The circuit uses state-of-the-art PHEMT technology
with proven reliability. On-chip bias circuitry allows operation from a single +3 V power supply, while resistive
feedback ensures stability (K>1) over all frequencies and
temperatures.
x +14.8 dBm P1dB at 2.0 GHz
+17 dBm Psat at 2.0 GHz
x Single +3V Supply
x 12.4 dB Gain at 2.0 GHz
x Ultra-miniature Package
x Unconditionally Stable
Applications
x Buffer or Driver Amp for PCS, PHS, ISM, SATCOM and
WLL Applications
x High Dynamic Range LNA
Simplified Schematic
OUTPUT
and Vd
Surface Mount Package: SOT-363 (SC-70)
6
INPUT
3
BIAS
BIAS
Pin Connections and Package Marking
GND 2
INPUT 3
81x
GND 1
OUTPUT
6 and V
d
GND
1, 2, 4, 5
5 GND
4 GND
Note: Package marking provides orientation and identification.
"81" = Device Code
"x" = Date code character identifies month of manufacture
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Human Body Model (Class 0)
Refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control.
MGA-81563 Absolute Maximum Ratings
Units
Absolute
Maximum[1]
Vd
Device Voltage, RF Output
to Ground
V
6.0
Vgd
Device Voltage, Gate
to Drain
V
-6.0
Vin
Range of RF Input Voltage
to Ground
V
+0.5 to -1.0
Symbol
Parameter
Pin
CW RF Input Power
dBm
+13
Tch
Channel Temperature
°C
165
TSTG
Storage Temperature
°C
-65 to 150
Thermal Resistance [2]:
Tch-c = 220°C/W
Notes:
1. Permanent damage may occur if any of
these limits are exceeded.
2. TC = 25°C (TC is defined to be the
temperature at the package pins where
contact is made to the circuit board.)
MGA-81563 Electrical Specifications, TC = 25°C, ZO = 50 Ω, Vd = 3 V
Symbol
Parameters and Test Conditions
Gtest
Gain in test circuit[1]
Units
f = 2.0 GHz
Min.
Typ.
Max.
Std Dev[2]
10.5
12.4
14.5
0.44
2.8
3.8
0.21
NFtest
[1]
Noise Figure in test circuit
f = 2.0 GHz
NF50
Noise Figure in 50 Ω system
f = 0.5 GHz
f = 1.0 GHz
f = 2.0 GHz
f = 3.0 GHz
f = 4.0 GHz
f = 6.0 GHz
dB
3.1
3.0
2.7
2.7
2.8
3.5
0.21
|S21|2
Gain in 50 Ω system
f = 0.5 GHz
f = 1.0 GHz
f = 2.0 GHz
= 3.0 GHz
f = 4.0 GHz
f = 6.0 GHz
dB
12.5
12.5
12.3
11.8
11.4
10.2
0.44
P1 dB
Output Power at 1 dB Gain Compression
f = 0.5 GHz
f = 1.0 GHz
f = 2.0 GHz
f = 3.0 GHz
f = 4.0 GHz
f = 6.0 GHz
dBm
15.1
14.8
14.8
14.8
14.8
14.7
0.86
IP3
Output Third Order Intercept Point
f = 2.0 GHz
dBm
+27
1.0
VSWRin
Input VSWR
f = 2.0 GHz
2.7:1
VSWRout
Output VSWR
f = 2.0 GHz
2.0:1
Id
Device Current
mA
31
42
51
Notes:
1. Guaranteed specifications are 100% tested in the circuit in Figure 10 in the Applications Information section.
2. Standard deviation number is based on measurement of at least 500 parts from three non-consecutive wafer lots during the initial characterization
of this product, and is intended to be used as an estimate for distribution of the typical specification.
2
MGA-81563 Typical Performance, TC = 25° C, Vd = 3 V
16
5
16
4
15
NOISE FIGURE (dB)
GAIN (dB)
12
10
8
6
4
TA = +85C
TA = +25C
TA = –40C
2
P1 dB (dBm)
14
3
2
13
TA = +85C
TA = +25C
TA = –40C
1
0
14
0
0
1
2
3
4
5
6
TA = +85C
TA = +25C
TA = –40C
12
11
0
1
2
FREQUENCY (GHz)
3
4
5
6
0
1
Figure 1. Power Gain vs. Frequency and
Temperature.
Figure 2. Noise Figure vs. Frequency and
Temperature.
16
2
3
4
5
6
5
6
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 3. Output Power @ 1 dB Gain
Compression
5
16
4
15
NOISE FIGURE (dB)
10
8
6
Vd = 2.7V
Vd = 3.0V
Vd = 3.3V
4
2
3
2
1
2
3
4
5
6
11
0
1
2
FREQUENCY (GHz)
60
3.5
50
DEVICE CURRENT (mA)
4
VSWR (n:1)
3
2.5
Output
2
2
3
4
FREQUENCY (GHz)
Figure 7. Input and Output VSWR vs.
Frequency.
5
6
0
1
5
6
2
3
4
FREQUENCY (GHz)
Figure 6. Output Power @ 1 dB Gain
Compression vs. Frequency and Voltage
16
14
Gain
40
30
TA = +85C
TA = +25C
TA = -40C
20
10
1.5
1
4
Figure 5. Noise Figure vs. Frequency and
Voltage.
Input
3
3
FREQUENCY (GHz)
Figure 4. Power Gain vs. Frequency and
Voltage.
0
Vd = 2.7V
Vd = 3.0V
Vd = 3.3V
12
0
0
1
13
Vd = 2.7V
Vd = 3.0V
Vd = 3.3V
1
0
14
GAIN and NF (dB)
GAIN (dB)
12
P1 dB (dBm)
14
12
10
8
6
4
NF
2
0
0
0
1
2
3
4
DEVICE VOLTAGE (V)
Figure 8. Device Current vs. Voltage and
Temperature.
5
0
1
2
3
4
5
FREQUENCY (GHz)
Figure 9. Minimum Noise Figure and
Associated Gain vs. Frequency.
6
MGA-81563 Typical Scattering Parameters[1], TC = 25°C, Z O = 50 Ω, Vd = 3 V
Freq.
S11
S21
S12
K
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
Factor
0.1
0.2
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
0.57
0.52
0.49
0.48
0.47
0.45
0.43
0.39
0.35
0.32
0.28
0.25
0.22
0.20
0.18
0.17
-16
-13
-16
-28
-40
-52
-63
-75
-87
-100
-114
-130
-146
-166
174
150
13.02
12.58
12.35
12.18
12.00
11.82
11.63
11.37
11.11
10.85
10.58
10.30
10.02
9.75
9.46
9.12
4.48
4.258
4.15
4.06
3.98
3.90
3.81
3.70
3.59
3.49
3.38
3.27
3.17
3.07
2.97
2.86
172
171
164
152
140
128
116
104
93
81
70
59
49
38
27
16
-25
-25
-25
-25
-25
-24
-24
-24
-22
-22
-22
-21
-21
-21
-21
-21
0.051
0.057
0.059
0.061
0.063
0.067
0.070
0.074
0.077
0.081
0.083
0.087
0.09
0.091
0.093
0.094
312
17
8
5
5
4
2
-1
-4
-7
-11
-15
-20
-25
-30
-36
0.43
0.38
0.35
0.35
0.34
0.34
0.32
0.31
0.29
0.27
0.25
0.23
0.21
0.19
0.17
0.14
-14
-13
-9
-15
-22
-30
-39
-46
-53
-60
-67
-74
-81
-90
-96
-100
1.47
1.58
1.64
1.65
1.65
1.65
1.66
1.69
1.73
1.77
1.82
1.85
1.91
1.93
1.98
2.05
MGA-81563 Typical Noise Parameters[1] TC = 25°C, ZO = 50 Ω, Vd = 3 V
Frequency
NFO
Gopt
Rn / 50 Ω
GHz
dB
Mag.
Ang.
—
0.5
2.90
0.16
1
1.57
1.0
2.80
0.15
17
0.96
1.5
2.70
0.14
28
0.75
2.0
2.69
0.14
37
0.41
2.5
2.68
0.13
44
0.39
3.0
2.68
0.11
50
0.38
3.5
2.68
0.09
56
0.36
4.0
2.69
0.06
65
0.34
4.5
2.69
0.03
76
0.33
5.0
2.68
0.01
137
0.32
5.5
2.67
0.02
-135
0.32
6.0
2.67
0.05
-109
0.32
6.5
2.71
0.07
-95
0.33
7.0
2.77
0.09
-78
0.36
Note:
1. Reference plane per Figure 11 in Applications Information section.
4
S22
GHz
MGA-81563 Applications Information
Introduction
Phase Reference Planes
This high performance GaAs MMIC amplifier was
developed for commercial wireless applications from
100 MHz to 6 GHz.
The positions of the reference planes used to specify the
S-Parameters and Noise Parameters for this device are
shown in Figure 11. As seen in the illustration, the reference planes are located at the point where the package
leads contact the test circuit.
The MGA-81563 runs on only 3 volts and typically requires
only 42 mA to deliver 14.8 dBm of output power at 1 dB
gain compression.
An innovative internal bias circuit regulates the device’s
internal current to enable the MGA-81563 to operate over
a wide temperature range with a single, positive power
supply of 3 volts. The MGA-81563 will operate with reduced performance with voltages as low as 1.5 volts.
The MGA-81563 uses resistive feedback to simultaneously
achieve flat gain over a wide bandwidth and match the input and output impedances to 50Ω. The MGA-81563 is unconditionally stable (K>1) over its entire frequency range,
making it both very easy to use and yielding consistent
performance in the manufacture of high volume wireless
products.
With a combination of high linearity (+27 dBm output IP3)
and low noise figure (3 dB), the MGA-81563 offers outstanding performance for applications requiring a high
dynamic range, such as receivers operating in dense signal environments. A wide dynamic range amplifier such as
the MGA-81563 can often be used to relieve the requirements of bulky, lossy filters at a receiver’s input.
The 14.8 dBm output power (P1dB) also makes the MGA81563 extremely useful for pre-driver, driver and buffer
stages. For transmitter gain stage applications that require higher output power, the MGA-81563 can provide
50 mW (17 dBm) of saturated output power with a high
power added efficiency of 45%.
Test Circuit
The circuit shown in Figure 10 is used for 100% RF testing
of Noise Figure and Gain. The 3.9 nH inductor at the input
fix-tunes the circuit to 2 GHz. The only purpose of the RFC
at the output is to apply DC bias to the device under test.
Tests in this circuit are used to guarantee the NFtest and Gtest
parameters shown in the table of Electrical Specifications.
100 pF
81
RF
INPUT
3.9 nH
RF
OUTPUT
22 nH
RFC
Vd
100 pF
Figure 10. Test Circuit.
5
REFERENCE
PLANES
TEST CIRCUIT
Figure 11. Phase Reference Planes.
Specifications and Statistical Parameters
Several categories of parameters appear within this data
sheet. Parameters may be described with values that are
either “minimum or maximum,” “typical,” or “standard deviations.”
The values for parameters are based on comprehensive
product characterization data, in which automated measurements are made on of a minimum of 500 parts taken
from 3 non-consecutive process lots of semiconductor
wafers. The data derived from product characterization
tends to be normally distributed, e.g., fits the standard
“bell curve.”
Parameters considered to be the most important to system performance are bounded by minimum or maximum
values. For the MGA-81563, these parameters are: Gain
(Gtest), Noise Figure (NFtest), and Device Current (Id). Each of
these guaranteed parameters is 100% tested.
Values for most of the parameters in the table of Electrical
Specifications that are described by typical data are the
mathematical mean (P), of the normal distribution taken
from the characterization data. For parameters where
measurements or mathematical averaging may not be
practical, such as the Noise and S-parameter tables or
performance curves, the data represents a nominal part
taken from the “center” of the characterization distribution. Typical values are intended to be used as a basis for
electrical design.
To assist designers in optimizing not only the immediate
circuit using the MGA-81563, but to also optimize and
evaluate trade-offs that affect a complete wireless system,
the standard deviation (V) is provided for many of the
Electrical Specifications parameters (at 25°) in addition
to the mean. The standard deviation is a measure of the
variability about the mean. It will be recalled that a normal distribution is completely described by the mean and
standard deviation.
Standard statistics tables or calculations provide the probability of a parameter falling between any two values,
usually symmetrically located about the mean. Referring
to Figure 12 for example, the probability of a parameter
being between ±1V is 68.3%; between ±2V is 95.4%; and
between ±3V is 99.7%.
68%
95%
99%
-3σ
-2σ
-1σ Mean (μ) +1σ +2σ
(typical)
+3σ
Parameter Value
Figure 12. Normal Distribution.
RF Layout
The RF layout in Figure 13 is suggested as a starting point
for microstripline designs using the MGA-81563 amplifier.
Adequate grounding is needed to obtain optimum performance and to maintain stability. All of the ground pins
of the MMIC should be connected to the RF groundplane
on the backside of the PCB by means of plated through
holes (vias) that are placed near the package terminals.
As a minimum, one via should be located next to each
ground pin to ensure good RF grounding. It is a good
practice to use multiple vias to further minimize ground
path inductance.
line on FR-4, for example, has approximately 0.3 dB loss at
4 GHz. This loss will add directly to the noise figure of the
MGA-81563.
Biasing
The MGA-81563 is a voltage-biased device and is designed
to operate from a single, +3 volt power supply with a typical current drain of 42 mA. The internal current regulation
circuit allows the amplifier to be operated with voltages
as high +5 volts or as low as +1.5 volt. Refer to the section
titled “Operation at Bias Voltages Other than 3 Volts” for
information on performance and precautions when using
other voltages.
Typical Application Example
The printed circuit layout in Figure 14 can serve as a design guide. This layout is a microstripline design (solid
groundplane on the backside of the circuit board) with a
50Ω input and output. The circuit is fabricated on 0.031inch thick FR-4 dielectric material. Plated through holes
(vias) are used to bring the ground to the top side of the
circuit where needed. Multiple vias are used to reduce the
inductance of the paths to ground.
OUT
IN
+V
MGA-8-A
50 Ω
81
RF Input
RF Output
and Vd
50 Ω
Figure 13. RF Layout.
It is recommended that the PCB pads for the ground pins
not be connected together underneath the body of the
package. PCB traces hidden under the package cannot be
adequately inspected for SMT solder quality.
Figure 14. PCB Layout.
A schematic diagram of the application circuit is shown
in Figure 15. DC blocking capacitors (C1 and C2) are used
at the input and output of the MMIC to isolate the device
from adjacent circuits. Although the input terminal of the
MGA-81563 is at ground potential, it is not a current sink.
If the input is connected to a preceding stage that has a
voltage present, the use of the DC blocking capacitor (C1)
is required.
C2
Vd
PCB Material
FR-4 or G-10 printed circuit board materials are a good
choice for most low cost wireless applications. Typical
board thickness is 0.020 to 0.031 inches. The width of the
50: microstriplines on PC boards in this thickness range is
also very convenient for mounting chip components such
as the series inductor at the input or DC blocking and bypass capacitors.
For higher frequencies or for noise figure critical applications, the additional cost of PTFE/glass dielectric materials
may be warranted to minimize transmission line loss at
the amplifier’s input. A 0.5 inch length of 50Ω microstrip6
C4
RFC
RF
Input
C1
L1
C2
RF
Output
Figure 15. Schematic Diagram.
DC bias is applied to the MGA-81563 through the
RF Output pin. An inductor (RFC), or length of high
impedance transmission line (preferably O/4 at the band
center), is used to isolate the RF from the DC supply.
The power supply is bypassed to ground with capacitor
C3 to keep RF off of the DC lines and to prevent gain dips
or peaks in the response of the amplifier.
An additional bypass capacitor, C4, may be added to the
bias line near the Vd connection to eliminate unwanted
feedback through bias lines that could cause oscillation.
C4 will not normally be needed unless several stages are
cascaded using a common power supply.
When multiple bypass capacitors are used, consideration
should be given to potential resonances. It is important
to ensure that the capacitors when combined with additional parasitic L’s and C’s on the circuit board do not form
resonant circuits. The addition of a small value resistor in
the bias supply line between bypass capacitors will often
“de-Q” the bias circuit and eliminate the effect of a resonance.
The value of the DC blocking and RF bypass capacitors
(C1 – C3) should be chosen to provide a small reactance
(typically < 5 ohms) at the lowest operating frequency.
The reactance of the RF choke (RFC) should be high (e.g.,
several hundred ohms) at the lowest frequency of operation.
The MGA-81563’s response at low frequencies is limited
to approximately 100 MHz by the size of capacitors integrated on the MMIC chip.
The input of the MGA-81563 is partially matched internally to 50 Ω. Without external matching elements, the
input VSWR of the MGA-81563 is 3.0:1 at 300 MHz and decreases to 1.5:1 at 6 GHz. This will be adequate for many
applications. If a better input VSWR is required, the use of
a series inductor, L1 in the applications example, (or, alternatively a length of high impedance transmission line) is
all that is needed to improve the match. The table in Figure 16 shows suggested values for L1 for various wireless
frequency bands.
Frequency
(GHz)
0.9
1.5
1.9
2.4
4.0
5.8
Inductor, L1
(nH)
10
6.8
3.9
2.7
0.5
0
Figure 16. Values for L1.
These values for L1 take into account the short length of
50Ω transmission line between the inductor and the input
pin of the device.
7
For applications requiring minimum noise figure (NFo),
some improvement over a 50Ω match is possible by
matching the signal input to the optimum noise match
impedance, *o, as specified in the “Typical Noise Parameters” table.
For most applications, as shown in the example circuit,
the output of the MGA-81563 is already sufficiently well
matched to 50Ω and no additional matching is needed.
The nominal device output VSWR is ≤ 2.2:1 from 300 MHz
through 6 GHz.
The completed application amplifier with all components
and SMA connectors is shown in Figure 17.
C1
OUT
L1
C2
IN
RFC
C3
+V
MGA-8-A
C4
Figure 17. Complete Application Circuit.
Operation in Saturation for Higher Output Power
For applications such as pre-driver and driver stages in
transmitters, the MGA-81563 can be operated in saturation to deliver up to 50 mW (17 dBm) of output power. The
power added efficiency increases to 45% at these power
levels.
There are several design considerations related to reliability and performance that should be taken into account
when operating the amplifier in saturation.
First of all, it is important that the stage preceding the
MGA-81563 not overdrive the device. Referring to the “Absolute Maximum Ratings” table, the maximum allowable
input power is +13 dBm. This should be regarded as the
input power level above which the device could be permanently damaged.
Driving the amplifier into saturation will also affect electrical performance. Figure 18 presents the Output Power,
Third Order Intercept Point (Output IP3), and Power Added
Efficiency (PAE) as a function of Input Power. This data
represents performance into a 50: load. Since the output
impedance of the device changes when driven into saturation, it is possible to obtain even more output power
with a “power match.” The optimum impedance match for
maximum output power is dependent on frequency and
actual output power level and can be arrived at empirically.
Operation at Bias Voltages Other than 3 Volts
50
PAE
While the MGA-81563 is designed primarily for use in +3
volt applications, the internal bias regulation circuitry allows it to be operated with any power supply voltage from
+1.5 to +5 volts. Performance of Gain, Noise Figure, and
Output Power over a wide range of bias voltage is shown
in Figure 20. As can be seen, the gain and NF are fairly
flat, but an increase in output power is possible by using
higher voltages. The use of +5 volts increases the P1dB by
2 dBm.
Pout and IP3 (dBm), PAE (%)
40
IP3
30
20
Power
10
0
-10
-20
-15
-10
-5
0
5
10
18
POWER IN (dBm)
Power
16
As the input power is increased beyond the linear range
of the amplifier, the gain becomes more compressed. Gain
as a function of either input or output power may be derived from Figure 18. Gain compression renders the amplifier less sensitive to variations in the power level from the
preceding stage. This can be a benefit in systems requiring
fairly constant output power levels from the MGA-81563.
Increased efficiency (45% at full output power) is another
benefit of saturated operation. At high output power levels, the bias supply current drops by about 15%. This is
normal and is taken into account for the PAE data in Figure 18.
Noise figure and input impedance are also affected by
saturated power operation. As a guideline, the input impedance is lowered, resulting in an improvement in input
VSWR of approximately 20%.
Like other active devices, the intermodulation products
of the MGA-81563 increase as the device is driven further
into nonlinear operation. The 3rd, 5th, and 7th order intermodulation products of the MGA-81563 are shown in
Figure 19 along with the fundamental response. This data
was measured in the test circuit in Figure 10.
30
Pout, 3rd, 5th, 7th HARMONICS (dBm)
20
NF, GAIN, P1 dB (dB)
Figure 18. Output Power, IP3, and Power-Added-Efficiency vs. Input Power.
(Vd = 3.0 V)
14
12
Gain
10
8
6
4
NF
2
0
0
1
2
3
4
5
SUPPLY VOLTAGE (V)
Figure 20. Gain, Noise Figure, and Output Power vs. Supply Voltage.
Some thermal precautions must be observed for operation
at higher bias voltages. For reliable operation, the channel
temperature should be kept within the 165°C indicated in
the “Absolute Maximum Ratings” table. As a guideline, operating life tests have established a MTTF in excess of 106
hours for channel temperatures up to 150°C.
There are several means of biasing the MGA-81563 at
3 volts in systems that use higher power supply voltages.
The simplest method, shown in Figure 21a, is to use a series resistor to drop the device voltage to 3 volts. For example, a 47Ω resistor will drop a 5-volt supply to 3 volts
at the nominal current of 42 mA. Some variation in performance could be expected for this method due to variations in current within the specified 31 to 51 mA min/max
range.
+5 V
10
+5 V
+5 V
Pout
0
47 Ω
-10
3rd
-20
Silicon
Diodes
Zener
Diode
(b)
(c)
-30
-40
5th
7th
-50
(a)
-60
-30
-15
-10
-5
0
5
10
15
FREQUENCY (GHz)
Figure 19. Intermodulation Products vs. Input Power.
(Vd = 3.0V)
8
Figure 21. Biasing From Higher Supply Voltages.
A second method illustrated in Figure 21b, is to use forward-biased diodes in series with the power supply. For
example, three silicon diodes connected in series will drop
a 5-volt supply to approximately 3 volts.
The use of the series diode approach has the advantage
of less dependency on current variation in the amplifiers
since the forward voltage drop of a diode is somewhat
current independent.
Reverse breakdown diodes (e.g., Zener diodes) could also
be used as in Figure 21c. However, care should be taken
to ensure that the noise generated by diodes in either Zener or reverse breakdown is adequately filtered (e.g., bypassed to ground) such that the diode’s noise is not added
to the amplifier’s signal.
SOT-363 PCB Footprint
A recommended PCB pad layout for the miniature SOT363 (SC-70) package used by the MGA-81563 is shown in
Figure 22 (dimensions are in inches). This layout provides
ample allowance for package placement by automated
assembly equipment without adding parasitics that could
impair the high frequency RF performance of the MGA81563. The layout is shown with a nominal SOT-363 package footprint superimposed on the PCB pads.
0.026
0.079
0.039
0.018
Dimensions in inches.
Figure 22. Recommended PCB Pad Layout for Avago’s SC70 6L/SOT-363
Products.
9
Package Dimensions
Outline 63 (SOT-363/SC-70)
HE
E
e
D
Q1
A2
A
c
A1
L
b
DIMENSIONS (mm)
SYMBOL
E
D
HE
A
A2
A1
Q1
e
b
c
L
MAX.
1.35
2.25
2.40
1.10
1.00
0.10
0.40
MIN.
1.15
1.80
1.80
0.80
0.80
0.00
0.10
NOTES:
1. All dimensions are in mm.
2. Dimensions are inclusive of plating.
3. Dimensions are exclusive of mold flash & metal burr.
4. All specifications comply to EIAJ SC70.
5. Die is facing up for mold and facing down for trim/form,
ie: reverse trim/form.
6. Package surface to be mirror finish.
0.650 BCS
0.15
0.10
0.10
0.30
0.20
0.30
Part Number Ordering Information
10
Part Number
No. of
Devices
Container
MGA-81563-TR1G
3000
7" Reel
MGA-81563-TR2G
10000
13" Reel
MGA-81563-BLKG
100
antistatic bag
Device Orientation
REEL
TOP VIEW
END VIEW
4 mm
8 mm
CARRIER
TAPE
81
81
81
81
USER
FEED
DIRECTION
COVER TAPE
Tape Dimensions and Product Orientation for Outline 63
P
P2
D
P0
E
F
W
C
D1
t1 (CARRIER TAPE THICKNESS)
Tt (COVER TAPE THICKNESS)
K0
10° MAX.
A0
DESCRIPTION
10° MAX.
B0
SYMBOL
SIZE (mm)
SIZE (INCHES)
CAVITY
LENGTH
WIDTH
DEPTH
PITCH
BOTTOM HOLE DIAMETER
A0
B0
K0
P
D1
2.40 ± 0.10
2.40 ± 0.10
1.20 ± 0.10
4.00 ± 0.10
1.00 + 0.25
0.094 ± 0.004
0.094 ± 0.004
0.047 ± 0.004
0.157 ± 0.004
0.039 + 0.010
PERFORATION
DIAMETER
PITCH
POSITION
D
P0
E
1.55 ± 0.10
4.00 ± 0.10
1.75 ± 0.10
0.061 + 0.002
0.157 ± 0.004
0.069 ± 0.004
CARRIER TAPE
WIDTH
THICKNESS
W
t1
8.00 + 0.30 - 0.10
0.254 ± 0.02
0.315 + 0.012
0.0100 ± 0.0008
COVER TAPE
WIDTH
TAPE THICKNESS
C
Tt
5.40 ± 0.10
0.062 ± 0.001
0.205 + 0.004
0.0025 ± 0.0004
DISTANCE
CAVITY TO PERFORATION
(WIDTH DIRECTION)
F
3.50 ± 0.05
0.138 ± 0.002
CAVITY TO PERFORATION
(LENGTH DIRECTION)
P2
2.00 ± 0.05
0.079 ± 0.002
For product information and a complete list of distributors, please go to our web site:
www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries.
Data subject to change. Copyright © 2005-2010 Avago Technologies. All rights reserved. Obsoletes AV01-0190EN
AV02-0966EN - May 22, 2010