DinTek DTL19P10 P-channel 100-v (d-s) mosfet halogen-free option available Datasheet

DTL19P10
www.din-tek.jp
P-Channel 100-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
- 100
RDS(on) (Ω)
ID (A)
0.120 at VGS = - 10 V
- 19
0.160 at VGS = - 4.5V
- 15.7
• Halogen-free Option Available
• TrenchFET® Power MOSFET
• UIS and Rg Tested
Qg (Typ.)
16.5 nC
RoHS
COMPLIANT
APPLICATIONS
• Active Clamp in Intermediate DC/DC Power Supplies
TO-251
S
G
D
G D S
Top View
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Symbol
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
ID
IDM
Pulsed Drain Current
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Avalanche Current
Single-Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
TJ, Tstg
Limit
- 100
± 20
- 19.0
- 12.6
- 15 a, b
- 10 a, b
- 20
- 13.2
- 3.0a, b
15
11.25
52
33
3.7a, b
2.4
- 50 to 150
260
Unit
V
A
mJ
W
°C
1
DTL19P10
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THERMAL RESISTANCE RATINGS
Parameter
t ≤ 10 s
Steady State
Maximum Junction-to-Ambienta, b
Maximum Junction-to-Case (Drain)
Symbol
RthJA
RthJC
Typical
26
1.9
Maximum
33
2.4
Unit
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Maximum under Steady State conditins is 81 °C/W.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VDS
VGS = 0 V, ID = - 250 µA
- 100
ΔVDS/TJ
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
ID = - 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
RDS(on)
Forward Transconductancea
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
gfs
Fall Time
Turn-On Delay Time
-1
- 10
a
Pulse Diode Forward Current
Body Diode Voltage
- 10
0.120
VGS = - 4.5 V, ID = - 3 A
0.119
0.160
VDS = - 15 V, ID = 4 A
25
1480
VDS = - 50 V, VGS = 0 V, f = 1 MHz
80
pF
60
VDS = - 50 V, VGS = - 10 V, ID = - 4 A
35
55
16.5
25
8
45
110
165
51
80
tf
40
60
td(on)
11
18
VSD
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
nC
8
VDD = - 50 V, RL = 12.5 Ω
ID ≅ - 4 A, VGEN = - 4.5 V, Rg = 1 Ω
VDD = - 50 V, RL = 12.5 Ω
ID ≅ - 4 A, VGEN = - 10 V, Rg = 1 Ω
13
20
42
65
10
15
TC = 25 °C
- 19
ISM
Body Diode Reverse Recovery Time
Ω
S
30
IS
µA
A
0.108
tf
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
V
nA
5.3
td(off)
Turn-Off DelayTime
-3
± 100
f = 1 MHz
tr
Rise Time
-1
4.7
td(off)
Turn-Off DelayTime
mV/°C
- 5.0
VDS = - 100 V, VGS = 0 V
VDS ≥ - 5 V, VGS = - 10 V
VGS = - 10 V, ID = - 4 A
Unit
V
- 100
VDS = - 50 V, VGS = - 4.5 V, ID = - 4 A
tr
Rise Time
Max.
VDS = - 100 V, VGS = 0 V, TJ = 55 °C
td(on)
Turn-On Delay Time
Typ.
- 20
IS = - 3 A
IF = - 4 A, dI/dt = 100 A/µs, TJ = 25 °C
Ω
ns
A
- 0.8
- 1.2
V
46
70
ns
97
150
nC
36
10
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
DTL19P10
TYPICAL CHARACTERISTICS
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25 °C, unless otherwise noted
20
2.0
VGS = 10 thru 4 V
1.6
I D - Drain Current (A)
I D - Drain Current (A)
16
12
8
4
1.2
0.8
TC = 125 °C
0.4
25 °C
3V
- 55 °C
0
0.0
0
1
2
3
4
5
0
1
VDS - Drain-to-Source Voltage (V)
3
4
5
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.18
2200
0.16
1760
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
2
0.14
VGS = 4.5 V
0.12
Ciss
1320
880
VGS = 10 V
0.10
440
Coss
0.08
0
0
4
8
12
16
20
Crss
0
40
20
ID - Drain Current (A)
80
100
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
2.2
ID = 4 A
ID = 4 A
1.9
8
VDS = 25 V
6
R DS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
60
VDS = 75 V
VDS = 50 V
4
2
VGS = 10 V
1.6
VGS = 4.5 V
1.3
1.0
0.7
0
0
8
16
24
Qg - Total Gate Charge (nC)
Gate Charge
32
40
0.4
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
3
DTL19P10
www.din-tek.jp
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1.0
R DS(on) - Drain-to-Source On-Resistance (Ω)
I S - Source Current (A)
100
TJ = 150 °C
25 °C
10
0.8
0.6
0.4
125 °C
0.2
25 °C
0.0
1
0.0
0.3
0.6
1.2
0.9
0
1.5
1
2
VSD - Source-to-Drain Voltage (V)
3
4
5
6
7
8
9
10
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.8
50
0.6
40
ID = 250 µA
Power (W)
VGS(th) (V)
0.4
ID = 5 mA
0.2
30
20
0.0
10
- 0.2
- 0.4
- 50
- 25
0
25
50
75
100
125
0
0.001
150
0.01
TJ - Temperature (°C)
10
100
Single Pulse Power, Junction-to-Ambient
100
Limited by RDS(on)*
10
ID - Drain Current (A)
1
Time (s)
Threshold Voltage
1 ms
1
10 ms
100 ms
0.1
TA = 25 °C
Single Pulse
1s
10 s
DC
0.01
0.1
1
* VGS
10
VDS - Drain-to-Source Voltage (V)
minimum VGS at which R DS(on) is specified
Safe Operating Area, Junction-to-Ambient
4
0.1
100
1000
DTL19P10
TYPICAL CHARACTERISTICS
www.din-tek.jp
25 °C, unless otherwise noted
15
I D - Drain Current (A)
12
9
6
3
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
65
2.0
52
1.6
39
1.2
Power
Power (W)
Current Derating*
26
0.8
13
0.4
0
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
TC - Case Temperature (°C)
TC - Case Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases
where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
5
DTL19P10
www.din-tek.jp
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.05
PDM
0.1
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 65 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
Square Wave Pulse Duration (s)
10-1
Normalized Thermal Transient Impedance, Junction-to-Case
6
1
Package Information
www.din-tek.jp
TOĆ251AA (DPAK)
E
A
L2
b2
Dim
A
A1
b
b1
b2
c
c1
D
E
e
L
L1
L2
L3
D
L3
L1
b1
L
b
MILLIMETERS
c1
e
c
A1
INCHES
Min
Max
Min
Max
2.21
2.38
0.087
0.094
0.89
1.14
0.035
0.045
0.71
0.89
0.028
0.035
0.76
1.14
0.030
0.045
5.23
5.43
0.206
0.214
0.46
0.58
0.018
0.023
0.46
0.58
0.018
0.023
5.97
6.22
0.235
0.245
6.48
6.73
0.255
0.265
2.28 BSC
0.090 BSC
8.89
9.53
0.350
0.375
1.91
2.28
0.075
0.090
0.89
1.27
0.035
0.050
1.15
1.52
0.045
0.060
ECN: S-03946—Rev. E, 09-Jul-01
DWG: 5346
Note: Dimension L3 is for reference only.
www.GD\VHPLMS
1
Package Information
Disclaimer
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Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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Please note that some Din-Tek documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Din-Tek documentation may still make reference
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