To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. 2. 3. 4. 5. 6. 7. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. 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Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries. (Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics. DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N04MLG, NP80N04NLG, NP80N04PLG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP80N04MLG, NP80N04NLG, and NP80N04PLG are N-channel MOS Field Effect Transistors designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP80N04MLG-S18-AY NP80N04NLG-S18-AY NP80N04PLG-E1B-AY NP80N04PLG-E2B-AY LEAD PLATING PACKING PACKAGE Tube TO-220 (MP-25K) typ. 1.9 g Note Note Note 50 p/tube Pure Sn (Tin) Note Tape 1000 p/reel TO-262 (MP-25SK) typ. 1.8 g TO-263 (MP-25ZP) typ. 1.5 g Note Pb-free (This product does not contain Pb in the external electrode.) FEATURES (TO-220) • Logic level • Built-in gate protection diode • Super low on-state resistance - NP80N04MLG, NP80N04NLG RDS(on)1 = 4.8 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 4.5 V, ID = 35 A) (TO-262) - NP80N04PLG RDS(on)1 = 4.5 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 8.7 mΩ MAX. (VGS = 4.5 V, ID = 35 A) • High current rating ID(DC) = ±80 A • Low input capacitance (TO-263) Ciss = 4600 pF TYP. • Designed for automotive application and AEC-Q101 qualified The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D19797EJ1V0DS00 (1st edition) Date Published May 2009 NS Printed in Japan 2009 NP80N04MLG, NP80N04NLG, NP80N04PLG ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 40 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25°C) ID(DC) ±80 A ID(pulse) ±300 A Total Power Dissipation (TC = 25°C) PT1 115 W Total Power Dissipation (TA = 25°C) PT2 1.8 W Channel Temperature Tch 175 °C Drain Current (pulse) Note1 Tstg −55 to +175 °C Repetitive Avalanche Current Note2 IAR 37 A Repetitive Avalanche Energy Note2 EAR 137 mJ Storage Temperature Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Tch ≤ 150°C, RG = 25 Ω THERMAL RESISTANCE Channel to Case Thermal Resistance Rth(ch-C) 1.30 °C/W Channel to Ambient Thermal Resistance Rth(ch-A) 83.3 °C/W 2 Data Sheet D19797EJ1V0DS NP80N04MLG, NP80N04NLG, NP80N04PLG ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL Zero Gate Voltage Drain Current TEST CONDITIONS MIN. TYP. MAX. UNIT IDSS VDS = 40 V, VGS = 0 V 1 μA Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 μA Gate to Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 1.4 | yfs | VDS = 5 V, ID = 35 A 25 RDS(on)1 VGS = 10 V, ID = 40 A NP80N04MLG, NP80N04NLG 3.8 4.8 mΩ VGS = 10 V, ID = 40 A 3.3 4.5 mΩ VGS = 4.5 V, ID = 35 A NP80N04MLG, NP80N04NLG 4.9 9.0 mΩ VGS = 4.5 V, ID = 35 A NP80N04PLG 4.6 8.7 mΩ 4600 6900 pF Forward Transfer Admittance Note Drain to Source On-state Resistance Note 2.5 V 64 S NP80N04PLG RDS(on)2 Input Capacitance Ciss VDS = 25 V, Output Capacitance Coss VGS = 0 V, 480 720 pF Reverse Transfer Capacitance Crss f = 1 MHz 310 560 pF Turn-on Delay Time td(on) VDD = 20 V, ID = 40 A, 17 37 ns Rise Time tr VGS = 10 V, 18 45 ns Turn-off Delay Time td(off) RG = 0 Ω 74 148 ns Fall Time tf 8 20 ns Total Gate Charge QG VDD = 32 V, 90 135 nC Gate to Source Charge QGS VGS = 10 V, 13 Gate to Drain Charge QGD ID = 80 A VF(S-D) IF = 80 A, VGS = 0 V 0.95 Reverse Recovery Time trr IF = 80 A, VGS = 0 V, 39 ns Reverse Recovery Charge Qrr di/dt = 100 A/μs 39 nC Body Diode Forward Voltage Note nC 26 nC 1.5 V Note Pulsed test TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω D.U.T. L 50 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME RL RG PG. VDD VGS VGS Wave Form 0 VGS 10% 90% VDD VDS 90% BVDSS IAS VDS ID VDS 0 10% 10% tr td(off) Wave Form τ VDD Starting Tch 90% VDS VGS 0 τ = 1 μs Duty Cycle ≤ 1% td(on) ton tf toff TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 50 Ω RL VDD Data Sheet D19797EJ1V0DS 3 NP80N04MLG, NP80N04NLG, NP80N04PLG TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 125 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 120 100 80 60 40 20 100 0 75 50 25 0 0 25 50 75 100 125 150 175 0 TC - Case Temperature - °C 25 50 75 100 125 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA 100 R D o S( (V G S ID(pulse) d it e Li m V ) 0 i =1 PW ID(DC) = 1i 0 0 μs i 1i m DC s wn i Lim d it e im nL do ake io at t ed 0.1 i Br ip i ss 1 ms D er 10 1i 0 ar y nd co Se w Po ID - Drain Current - A 1000 n) TC = 25°C Single Pulse 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - °C/W 1000 Rth(ch-A) = 83.3°C/W 100 10 Rth(ch-C) = 1.30°C/W 1 0.1 Single Pulse 0.01 1m 10 m 100 m 1 10 PW - Pulse Width - s 4 150 Data Sheet D19797EJ1V0DS 100 1000 175 NP80N04MLG, NP80N04NLG, NP80N04PLG DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 300 300 250 10 V ID - Drain Current - A ID - Drain Current - A 250 200 150 VGS = 4.5 V 100 50 10 V 200 150 VGS = 4.5 V 100 50 Pulsed NP80N04MLG, NP80N04NLG 0 0 0 0.5 1 1.5 2 0 0.5 1 1.5 2 VDS - Drain to Source Voltage - V FORWARD TRANSFER CHARACTERISTICS GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE 100 Tch = −55°C −25°C 25°C 75°C 125°C 150°C 175°C 10 1 0.1 0.01 VDS = 10 V Pulsed 0.001 0.0001 0 1 2 3 4 VGS(th) - Gate to Source Threshold Voltage - V VDS - Drain to Source Voltage - V 1000 ID - Drain Current - A Pulsed NP80N04PLG 3 2 1 VDS = VGS ID = 250 μA 0 -75 -25 25 75 125 175 225 Tch - Channel Temperature - °C VGS - Gate to Source Voltage - V | yfs | - Forward Transfer Admittance - S FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 10 Tch = −55°C −25°C 25°C 75°C 125°C 150°C 175°C VDS = 5 V Pulsed 1 0.1 1 10 100 ID - Drain Current - A Data Sheet D19797EJ1V0DS 5 NP80N04MLG, NP80N04NLG, NP80N04PLG 8 6 VGS = 4.5 V 4 10 V 2 Pulsed NP80N04MLG, NP80N04NLG 0 1 10 100 1000 RDS(on) - Drain to Source On-state Resistance - mΩ 10 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 10 8 6 VGS = 4.5 V 4 10 V 2 1 10 100 1000 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 10 ID = 40 A Pulsed 8 6 4 2 NP80N04MLG, NP80N04NLG 0 0 4 8 12 16 20 RDS(on) - Drain to Source On-state Resistance - mΩ ID - Drain Current - A 10 ID = 40 A Pulsed 8 6 4 2 NP80N04PLG 0 0 4 8 12 16 20 VGS - Gate to Source Voltage - V VGS - Gate to Source Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 10 8 VGS = 4.5 V, ID = 35 A 6 10 V, 40 A 4 2 Pulsed NP80N04MLG, NP80N04NLG 0 -75 -25 25 75 125 175 225 Tch - Channel Temperature - °C 6 Pulsed NP80N04PLG 0 RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 10 8 VGS = 4.5 V, ID = 35 A 6 10 V, 40 A 4 2 Pulsed NP80N04PLG 0 -75 -25 25 75 125 175 Tch - Channel Temperature - °C Data Sheet D19797EJ1V0DS 225 NP80N04MLG, NP80N04NLG, NP80N04PLG CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SWITCHING CHARACTERISTICS 1000 10000 td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF 100000 Ciss Coss 1000 Crss VGS = 0 V f = 1 MHz 100 0.01 0.1 1 10 td(off) 100 td(on) 10 tr 1 0.1 100 tf VDD = 20 V VGS = 10 V RG = 0 Ω 1 10 100 ID - Drain Current - A VDS - Drain to Source Voltage - V DYNAMIC INPUT/OUTPUT CHARACTERISTICS VDD = 32 V 20 V 8V 40 8 30 6 20 4 VGS 10 2 VDS ID = 80 A 0 0 20 40 60 1000 IF - Diode Forward Current - A 10 VDS - Drain to Source Voltage - V VDS - Drain to Source Voltage - V 50 SOURCE TO DRAIN DIODE FORWARD VOLTAGE 0 100 80 QG - Gate Charge - nC 10 V 100 4.5 V VGS = 0 V 10 1 0.1 Pulsed 0.01 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VF(S-D) - Source to Drain Voltage - V REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT trr - Reverse Recovery Time - ns 100 di/dt = 100 A/μs VGS = 0 V 10 0.1 1 10 100 IF - Diode Forward Current - A Data Sheet D19797EJ1V0DS 7 NP80N04MLG, NP80N04NLG, NP80N04PLG PACKAGE DRAWINGS (Unit: mm) 3 0.8±0.1 0.5±0.2 2.54 TYP. 2.5±0.2 2.54 TYP. 2 3 10.1±0.3 15.9 MAX. 1.27±0.2 1 4.45±0.2 1.3±0.2 13.7±0.3 2 13.7±0.3 1 10.0±0.2 4 3.1±0.2 6.3±0.3 2.8±0.3 4 4.45±0.2 1.3±0.2 0.8±0.1 2.54 TYP. 2.54 TYP. 1.27±0.2 0.5±0.2 EQUIVALENT CIRCUIT 10.0 ±0.3 7.88 MIN. 1.35 ±0.3 TO-263 (MP-25ZP) Drain 4.45 ±0.2 1.3 ±0.2 4 15.25 ±0.5 0.5 Body Diode Gate 9.15 ±0.3 8.0 TYP. 2.5±0.2 1. Gate 2. Drain 3. Source 4. Fin (Drain) 1. Gate 2. Drain 3. Source 4. Fin (Drain) No plating 3.1±0.3 φ 3.8±0.2 10.0±0.2 1.2±0.3 TO-262 (MP-25SK) 8.9±0.2 TO-220 (MP-25K) 0.025 to 0.25 Gate Protection Diode Source .2 0 to 8 ˚ 0.25 1 2 3 2.5 2.54 1. Gate 2. Drain 3. Source 4. Fin (Drain) 2.54 ±0.25 0.6 ±0 0.75 ±0.2 Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 8 Data Sheet D19797EJ1V0DS NP80N04MLG, NP80N04NLG, NP80N04PLG TAPE INFORMATION (NP80N04PLG) There are two types (-E1B, -E2B) of taping depending on the direction of the device. Draw-out side Reel side −E1B TYPE −E2B TYPE MARKING INFORMATION NEC 80N04 LG Pb-free plating marking Abbreviation of part number Lot code RECOMMENDED SOLDERING CONDITIONS These products should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, please contact an NEC Electronics sales representative. For technical information, see the following website. Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html) Soldering Method Soldering Conditions Infrared reflow Maximum temperature (Package's surface temperature): 260°C or below NP80N04PLG Time at maximum temperature: 10 seconds or less Recommended Condition Symbol IR60-00-3 Time of temperature higher than 220°C: 60 seconds or less Preheating time at 160 to 180°C: 60 to 120 seconds Maximum number of reflow processes: 3 times Maximum chlorine content of rosin flux (percentage mass): 0.2% or less Wave soldering Maximum temperature (Solder temperature): 260°C or below NP80N04MLG, Time: 10 seconds or less NP80N04NLG Maximum chlorine content of rosin flux: 0.2% (wt.) or less Partial heating Maximum temperature (Pin temperature): 350°C or below NP80N04MLG, Time (per side of the device): 3 seconds or less NP80N04NLG, Maximum chlorine content of rosin flux: 0.2% (wt.) or less THDWS P350 NP80N04PLG Caution Do not use different soldering methods together (except for partial heating). Data Sheet D19797EJ1V0DS 9 NP80N04MLG, NP80N04NLG, NP80N04PLG • The information in this document is current as of May, 2009. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. • NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC Electronics endeavors to enhance the quality and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. In addition, NEC Electronics products are not taken measures to prevent radioactive rays in the product design. When customers use NEC Electronics products with their products, customers shall, on their own responsibility, incorporate sufficient safety measures such as redundancy, fire-containment and anti-failure features to their products in order to avoid risks of the damages to property (including public or social property) or injury (including death) to persons, as the result of defects of NEC Electronics products. • NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E0904E