AZ23-V-Series www.vishay.com Vishay Semiconductors Small Signal Zener Diodes, Dual FEATURES • These diodes are also available in other case styles and configurations including: the dual diode common cathode configuration with type designation DZ23, the single diode SOT-23 case with the type designation BZX84C, and the single diode SOD-123 case with the type designation BZT52C 3 1 2 • Dual silicon planar Zener diodes, common anode • The Zener voltages are graded according to the international E 24 standard PRIMARY CHARACTERISTICS PARAMETER VALUE UNIT VZ range nom. 2.7 to 51 V Test current IZT 5 mA VZ specification Pulse current Int. construction Dual • The parameters are valid for both diodes in one case. ΔVZ and Δrzj of the two diodes in one case is ≤ 5 % • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC ORDERING INFORMATION DEVICE NAME ORDERING CODE TAPED UNITS PER REEL MINIMUM ORDER QUANTITY AZ23-V-series AZ23-V-series-GS18 10 000 (8 mm tape on 13" reel) 10 000 AZ23-V-series AZ23-V-series-GS08 3000 (8 mm tape on 7" reel) 15 000 PACKAGE PACKAGE NAME SOT-23 WEIGHT 8.8 mg MOLDING COMPOUND MOISTURE SENSITIVITY FLAMMABILITY RATING LEVEL UL 94 V-0 MSL level 1 (according J-STD-020) SOLDERING CONDITIONS 260 °C/10 s at terminals ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Power dissipation Device on fiberglass substrate, see layout on page 6 Ptot 300 mW Junction to ambient air Device on fiberglass substrate, see layout on page 6 RthJA 420 K/W Tj 150 °C Tstg - 65 to + 150 °C Junction temperature Storage temperature range Rev. 1.7, 22-Nov-11 Document Number: 85759 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 AZ23-V-Series www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) ZENER VOLTAGE RANGE (1) PART NUMBER MARKING CODE VZ at IZT1 TEST CURRENT IZT1 V IZT2 mA REVERSE VOLTAGE DYNAMIC RESISTANCE TEMPERATURE COEFFICIENT OF ZENER VOLTAGE VR at IR ZZ at IZT1 ZZK at IZT2 αVZ at IZT Ω 10-4/°C V nA MIN. NOM. MAX. MAX. MAX. MIN. MAX. AZ23C2V7-V D1 2.5 2.7 2.9 5 1 MAX. - - 75 (< 83) < 500 -9 -4 AZ23C3V0-V D2 2.8 3.0 3.2 5 1 - - 80 (< 95) < 500 -9 -3 AZ23C3V3-V D3 3.1 3.3 3.5 5 1 - - 80 (< 95) < 500 -8 -3 AZ23C3V6-V D4 3.4 3.6 3.8 5 1 - - 80 (< 95) < 500 -8 -3 AZ23C3V9-v D5 3.7 3.9 4.1 5 1 - - 80 (< 95) < 500 -7 -3 AZ23C4V3-V D6 4 4.3 4.6 5 1 - - 80 (< 95) < 500 -6 -1 AZ23C4V7-V D7 4.4 4.7 5 5 1 - - 70 (< 78) < 500 -5 2 AZ23C5V1-V D8 4.8 5.1 5.4 5 1 > 0.8 100 30 (< 60) < 480 -3 4 AZ23C5V6-V D9 5.2 5.6 6 5 1 >1 100 10 (< 40) < 400 -2 6 AZ23C6V2-V D10 5.8 6.2 6.6 5 1 >2 100 4.8 (< 10) < 200 -1 7 AZ23C6V8-V D11 6.4 6.8 7.2 5 1 >3 100 4.5 (< 8) < 150 2 7 AZ23C7V5-V D12 7 7.5 7.9 5 1 >5 100 4 (< 7) < 50 -3 7 AZ23C8V2-V D13 7.7 8.2 8.7 5 1 >6 100 4.5 (< 7) < 50 4 7 AZ23C9V1-V D14 8.5 9.1 9.6 5 1 >7 100 4.8 (< 10) < 50 5 8 8 AZ23C10-V D15 9.4 10 10.6 5 1 > 7.5 100 5.2 (< 15) < 70 5 AZ23C11-V D16 10.4 11 11.6 5 1 > 8.5 100 6 (< 20) < 70 5 9 AZ23C12-V D17 11.4 12 12.7 5 1 >9 100 7 (< 20) < 90 6 9 AZ23C13-V D18 12.4 13 14.1 5 1 > 10 100 9 (< 25) < 110 7 9 AZ23C15-V D19 13.8 15 15.6 5 1 > 11 100 11 (< 30) < 110 7 9 AZ23C16-V D20 15.3 16 17.1 5 1 > 12 100 13 (< 40) < 170 8 9.5 AZ23C18-V D21 16.8 18 19.1 5 1 > 14 100 18 (< 50) < 170 8 9.5 AZ23C20-V D22 18.8 20 21.2 5 1 > 15 100 20 (< 50) < 220 8 10 AZ23C22-V D23 20.8 22 23.3 5 1 > 17 100 25 (< 55) < 220 8 10 AZ23C24-V D24 22.8 24 25.6 5 1 > 18 100 28 (< 80) < 220 8 10 AZ23C27-V D25 25.1 27 28.9 5 1 > 20 100 30 (< 80) < 250 8 10 AZ23C30-V D26 28 30 32 5 1 > 22.5 100 35 (< 80) < 250 8 10 AZ23C33-V D27 31 33 35 5 1 > 25 100 40 (< 80) < 250 8 10 AZ23C36-V D28 34 36 38 5 1 > 27 100 40 (< 90) < 250 8 10 AZ23C39-V D29 37 39 41 5 1 > 29 100 50 (< 90) < 300 10 12 AZ23C43-V D30 40 43 46 5 1 > 32 100 60 (< 100) < 700 10 12 AZ23C47-V D31 44 47 50 5 1 > 35 100 70 (< 100) < 750 10 12 AZ23C51-V D32 48 51 54 5 1 > 38 100 70 (< 100) < 750 10 12 Note (1) Tested with pulses t = 5 ms p Rev. 1.7, 22-Nov-11 Document Number: 85759 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 AZ23-V-Series www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) ZENER VOLTAGE RANGE (1) PART NUMBER MARKING CODE VZ at IZT1 TEST CURRENT IZT1 V IZT2 mA REVERSE VOLTAGE DYNAMIC RESISTANCE TEMPERATURE COEFFICIENT OF ZENER VOLTAGE VR at IR ZZ at IZT1 ZZK at IZT2 αVZ at IZT Ω 10-4/°C V nA MIN. NOM. MAX. MAX. MAX. MIN. MAX. AZ23B2V7-V D1 2.65 2.7 2.75 5 1 MAX. - - 75 (< 83) < 500 -9 -4 AZ23B3V0-V D2 2.94 3.0 3.06 5 1 - - 80 (< 95) < 500 -9 -3 AZ23B3V3-V D3 3.23 3.3 3.37 5 1 - - 80 (< 95) < 500 -8 -3 AZ23B3V6-V D4 3.53 3.6 3.67 5 1 - - 80 (< 95) < 500 -8 -3 AZ23B3V9-V D5 3.82 3.9 3.98 5 1 - - 80 (< 95) < 500 -7 -3 AZ23B4V3-V D6 4.21 4.3 4.39 5 1 - - 80 (< 95) < 500 -6 -1 AZ23B4V7-V D7 4.61 4.7 4.79 5 1 - - 70 (< 78) < 500 -5 2 AZ23B5V1-V D8 5 5.1 5.2 5 1 > 0.8 100 30 (< 60) < 480 -3 4 AZ23B5V6-V D9 5.49 5.6 5.71 5 1 >1 100 10 (< 40) < 400 -2 6 7 AZ23B6V2-V D10 6.08 6.2 6.32 5 1 >2 100 4.8 (< 10) < 200 -1 AZ23B6V8-V D11 6.66 6.8 6.94 5 1 >3 100 4.5 (< 8) < 150 2 7 AZ23B7V5-V D12 7.35 7.5 7.65 5 1 >5 100 4 (< 7) < 50 -3 7 AZ23B8V2-V D13 8.04 8.2 8.36 5 1 >6 100 4.5 (< 7) < 50 4 7 AZ23B9V1-V D14 8.92 9.1 9.28 5 1 >7 100 4.8 (< 10) < 50 5 8 AZ23B10-V D15 9.8 10 10.2 5 1 > 7.5 100 5.2 (< 15) < 70 5 8 AZ23B11-V D16 10.8 11 11.2 5 1 > 8.5 100 6 (< 20) < 70 5 9 AZ23B12-V D17 11.8 12 12.2 5 1 >9 100 7 (< 20) < 90 6 9 AZ23B13-V D18 12.7 13 13.3 5 1 > 10 100 9 (< 25) < 110 7 9 AZ23B15-V D19 14.7 15 15.3 5 1 > 11 100 11 (< 30) < 110 7 9 AZ23B16-V D20 15.7 16 16.3 5 1 > 12 100 13 (< 40) < 170 8 0.5 AZ23B18-V D21 17.6 18 18.4 5 1 > 14 100 18 (< 50) < 170 8 0.5 AZ23B20-V D22 19.6 20 20.4 5 1 > 15 100 20 (< 50) < 220 8 10 AZ23B22-V D23 21.6 22 22.4 5 1 > 17 100 25 (< 55) < 220 8 10 AZ23B24-V D24 23.5 24 24.5 5 1 > 18 100 28 (< 80) < 220 8 10 AZ23B27-V D25 26.5 27 27.5 5 1 > 20 100 30 (< 80) < 250 8 10 AZ23B30-V D26 29.4 30 30.6 5 1 > 22.5 100 35 (< 80) < 250 8 10 AZ23B33-V D27 32.3 33 33.7 5 1 > 25 100 40 (< 80) < 250 8 10 AZ23B36-V D28 35.3 36 36.7 5 1 > 27 100 40 (< 90) < 250 8 10 AZ23B39-V D29 38.2 39 39.8 5 1 > 29 100 50 (< 90) < 300 10 12 AZ23B43-V D30 42.1 43 43.9 5 1 > 32 100 60 (< 100) < 700 10 12 AZ23B47-V D31 46.1 47 47.9 5 1 > 35 100 70 (< 100) < 750 10 12 AZ23B51-V D32 50 51 52 5 1 > 38 100 70 (< 100) < 750 10 12 Note (1) Tested with pulses t = 5 ms p Rev. 1.7, 22-Nov-11 Document Number: 85759 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 AZ23-V-Series www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) mA 103 K/W 103 IF 10 Rzth TJ = 100 °C 1 Rzth = RthA x VZ x 5 4 3 2 102 Δ VZ ΔTj 102 10-1 5 4 3 TJ = 25 °C 2 10-2 10 10-3 5 4 3 10-4 10 negative 2 -5 positive 1 0 0.2 0.4 0.6 0.8 1V 1 VF 18114 2 3 4 5 10 18121 Fig. 1 - Forward Characteristics 2 3 4 5 100 V VZ at IZ = 5 mA Fig. 4 - Thermal Differential Resistance vs. Zener Voltage Ω 100 mW 500 7 5 4 400 Rzj Ptot 3 2 300 10 7 200 5 4 3 100 2 0 0 100 1 200 °C Tj = 25 °C 5 4 2 4 5 10 2 Δ VZ ΔTj 47 + 51 43 39 36 102 3 4 5 100 V VZ mV/°C 25 Ω 103 3 3 Fig. 5 - Dynamic Resistance vs. Zener Voltage Fig. 2 - Admissible Power Dissipation vs. Ambient Temperature 7 2 18122 Tamb 18115 Rzj Tj = 25 °C IZ = 5 mA 1 20 5 mA IZ = 1 mA 20 mA 15 10 7 5 4 3 5 2 0 10 0.1 18120 -5 2 3 4 5 1 2 IZ 3 4 5 10 mA Fig. 3 - Dynamic Resistance vs. Zener Current Rev. 1.7, 22-Nov-11 1 18123 2 3 4 5 10 2 3 4 5 100 V VZ Fig. 6 - Temperature Dependence of Zener Voltage vs. Zener Voltage Document Number: 85759 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 AZ23-V-Series www.vishay.com Vishay Semiconductors V 0.8 V 1.6 25 0.7 15 VZ at IZ = 5 mA 0.6 Δ VZ 1.2 Δ VZ 0.5 8 0.4 0.2 6.2 5.9 0.1 5.6 0 1 0.8 7 0.3 0.6 0.4 0.2 0 5.1 -1 0 20 40 60 80 100 120 140 C 18124 - 0.2 4.7 3.6 - 0.2 ΔVZ = Rzth x IZ 1.4 10 - 0.4 18127 1 10 4 5 2 100 V 3 4 5 Fig. 10 - Change of Zener Voltage from Turn-on up to the Point of Thermal Equilibrium vs. Zener Voltage mV/°C 100 V 5 ΔVZ = Rzth x IZ IZ = 5 mA 4 80 Δ VZ 60 3 40 2 20 1 0 IZ = 5 mA IZ = 2 mA 0 0 20 40 60 80 0 100 V VZ 18125 20 40 mA 50 8 7 Tj = 25 °C 6.8 3.3 4.7 40 5 3.9 5.6 2.7 lZ 51 43 100 V 80 Fig. 11 - Change of Zener Voltage from Turn-on up to the Point of Thermal Equilibrium vs. Zener Voltage V 9 6 60 VZ 18128 Fig. 8 - Temperature Dependence of Zener Voltage vs. Zener Voltage Δ VZ 3 VZ at IZ = 5 mA Fig. 7 - Change of Zener Voltage vs. Junction Temperature Δ VZ ΔTj 2 Tj 8.2 30 4 36 3 20 2 1 Test current IZ 5 mA 10 0 IZ = 2 mA -1 0 20 18126 40 60 80 100 120 Tj 140 °C Fig. 9 - Change of Zener Voltage vs. Junction Temperature Rev. 1.7, 22-Nov-11 0 0 18111 1 2 3 4 5 6 7 8 9 10 V VZ Fig. 12 - Breakdown Characteristics Document Number: 85759 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 AZ23-V-Series www.vishay.com mA 30 Vishay Semiconductors mA 10 10 12 Tj = 25 °C Tj = 25 °C 8 lZ lZ 15 20 18 Test current IZ 5 mA 6 39 51 43 47 22 4 27 Test 10 current IZ 5 mA 33 36 2 0 0 0 10 20 18112 40 V 30 0 VZ 10 20 30 40 50 60 70 80 90 100 V VZ 18113 Fig. 13 - Breakdown Characteristics Fig. 14 - Breakdown Characteristics LAYOUT FOR RthJA TEST Thickness: fiberglass 0.059" (1.5 mm) Copper leads 0.012" (0.3 mm) 7.5 (0.3) 3 (0.12) 1 (0.4) 2 (0.8) 1 (0.4) 12 (0.47) 15 (0.59) 2 (0.8) 0.8 (0.03) 5 (0.2) 1.5 (0.06) 5.1 (0.2) Rev. 1.7, 22-Nov-11 17451 Document Number: 85759 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 AZ23-V-Series www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters (inches): SOT-23 1.15 (0.045) 8° 0.2 (0.008) 0.098 (0.004) 0.175 (0.007) 0.1 (0.004) max. 0.550 ref. (0.022 ref.) 0.45 (0.018) 0.35 (0.014) 0.35 (0.014) 0° t o 0.5 (0.020) 0.45 (0.018) 0.9 (0.035) 3.1 (0.122) 2.8 (0.110) 0.3 (0.012) 2.6 (0.102) 2.35 (0.093) Foot print recommendation: 1 (0.039) 0.9 (0.035) 0.9 (0.035) 0.7 (0.028) 2 (0.079) 1.20 (0.047) 1.43 (0.056) 0.45 (0.018) 0.35 (0.014) 1 (0.039) 0.9 (0.035) 0.95 (0.037) 0.95 (0.037) Document no.: 6.541-5014.01-4 Rev. 8 - Date: 23.Sept.2009 17418 Rev. 1.7, 22-Nov-11 Document Number: 85759 7 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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