SEME IRF044SMD LAB MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6 (0 .0 3 0 ) m in . 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 2 60V 34A 0.040W FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT – EFFICIENT USE OF PCB SPACE. 9 .6 9 .3 1 1 .5 1 1 .2 7 (0 8 (0 8 (0 8 (0 .3 8 .3 6 .4 5 .4 4 1 ) 9 ) 6 ) 4 ) 0 .5 0 (0 .0 2 0 ) 0 .2 6 (0 .0 1 0 ) • LIGHTWEIGHT • HIGH PACKING DENSITIES SMD1 – Surface Mount Package Pad 1 – Gate Pad 2 – Drain • SIMPLE DRIVE REQUIREMENTS Pad 3 – Source Note: IRFNxxx also available with pins 1 and 3 reversed. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS Gate – Source Voltage ±20V ID Continuous Drain Current (VGS = 0 , Tcase = 25°C) 34A ID Continuous Drain Current (VGS = 0 , Tcase = 100°C) 21A IDM Pulsed Drain Current 1 136A PD Power Dissipation @ Tcase = 25°C 75W Linear Derating Factor 0.6W/°C 2 EAS Single Pulse Avalanche Energy dv/dt Peak Diode Recovery 3 TJ , Tstg Operating and Storage Temperature Range TL Package Mounting Surface Temperature (for 5 sec) RqJC RqJ–PCB Thermal Resistance Junction to Case Thermal Resistance Junction to PCB (Typical) 340mJ 4.5V/ns –55 to 150°C 300°C 1.67°C/W 4°C/W Notes 1) Pulse Test: Pulse Width £ 300ms, d £ 2% 2) @ VDD = 25V , L ³ 0.3mH , RG = 25W , Peak IL = 34A , Starting TJ = 25°C 3) @ ISD £ 34A , di/dt £ 100A/ms , VDD £ BVDSS , TJ £ 150°C , SUGGESTED RG = 9.1W Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 7/00 SEME IRF044SMD LAB ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated) Parameter BVDSS Test Conditions STATIC ELECTRICAL RATINGS Drain – Source Breakdown Voltage DBVDSS Temperature Coefficient of DTJ Breakdown Voltage RDS(on) ID = 1mA VGS(th) Gate Threshold Voltage 1 Max. V / °C VGS = 10V ID = 21A 0.040 VGS = 10V ID = 34A 0.050 VDS = VGS ID = 250mA 2 VDS ³ 15V IDS = 21A 17 VGS = 0 V (W) S(W VDS = 0.8BVDSS 25 TJ = 125°C 250 mA Forward Transconductance IDSS Zero Gate Voltage Drain Current IGSS Forward Gate – Source Leakage VGS = 20V 100 IGSS Reverse Gate – Source Leakage VGS = –20V –100 Ciss DYNAMIC CHARACTERISTICS Input Capacitance VGS = 0 2400 Coss Output Capacitance VDS = 25V 1100 Crss Reverse Transfer Capacitance f = 1MHz 230 Qg Total Gate Charge 1 Qgs Gate – Source Charge 1 ID = 34A 88 ID = 34A 6.7 15 VDS = 0.5BVDSS 18 52 Qgd Gate – Drain (“Miller”) Charge td(on) Turn–On Delay Time tr Rise Time td(off) Turn–Off Delay Time tf Fall Time IS SOURCE – DRAIN DIODE CHARACTERISTICS Continuous Source Current nC nC 23 VDD = 30V 130 ID = 34A 81 RG = 9.1W ns 79 34 2 ISM Pulse Source Current VSD Diode Forward Voltage trr Reverse Recovery Time IF = 34A Qrr Reverse Recovery Charge di / dt £ 100A/ms VDD £ 50V ton Forward Turn–On Time LD PACKAGE CHARACTERISTICS Internal Drain Inductance (from centre of drain pad to die) 0.8 LS Internal Source Inductance (from centre of source pad to end of source bond wire) 2.8 136 IS = 34A nA pF 39 VDS = 0.5BVDSS 1 W 4 gfs VGS = 10V Unit V 0.68 ID = 1mA 1 Typ. 60 Reference to 25°C Static Drain – Source On–State Resistance VGS = 0 Min. TJ = 25°C VGS = 0 TJ = 25°C A 2.5 V 220 ns 1.6 mC Negligible nH Notes 1) Pulse Test: Pulse Width £ 300ms, d £ 2% 2) Repetitive Rating – Pulse width limited by maximum junction temperature. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 7/00