HANBit HMS12832M4V SRAM MODULE 512KByte (128K x 32-Bit) 3.3V, 64Pin-SIMM Part No. HMS12832M4V GENERAL DESCRIPTION The HMS12832M4V is a high-speed static random access memory (SRAM) module containing 131,072 words organized in a x32-bit configuration. The module consists of four 128K x 8 SRAMs mounted on a 64-pin, single-sided, FR4-printed circuit board. PD0 and PD1 identify the module’s density allowing interchangeable use of alternate density, industry- standard modules. Four chip enable inputs, (/CE1, /CE2, /CE3 and /CE4) are used to enable the module’s 4 bytes independently. Output enable(/OE) and write enable(/WE) can set the memory input and output. Data is written into the SRAM memory when write enable (/WE) and chip enable (/CE) inputs are both LOW. Reading is accomplished when /WE remains HIGH and /CE and output enable (/OE) are LOW. For reliability, this SRAM module is designed as multiple power and ground pin. All module components may be powered from a single +3.3V DC power supply and all inputs and outputs are fully TTL-compatible. FEATURES PIN ASSIGNMENT w Access times : 8, 10, 12, 15 and 20ns w High-density 512KByte design PIN SYMBOL PIN SYMBOL PIN SYMBOL PIN SYMBOL w High-reliability, high-speed design w Single + 3.3V ±0.3V power supply w Easy memory expansion with /CE and /OE functions w All inputs and outputs are TTL-compatible w Industry-standard pinout w FR4-PCB design OPTIONS MARKING w Timing 1 Vss 17 A2 33 /CE4 49 A4 2 NC 18 A9 34 /CE3 50 A11 3 NC 19 DQ12 35 NC 51 A5 4 DQ0 20 DQ4 36 A16 52 A12 5 DQ8 21 DQ13 37 /OE 53 Vcc 6 DQ1 22 DQ5 38 Vss 54 A13 7 DQ9 23 DQ14 39 DQ24 55 A6 8 DQ2 24 DQ6 40 DQ16 56 DQ20 9 DQ10 25 DQ15 41 DQ25 57 DQ28 10 DQ3 26 DQ7 42 DQ17 58 DQ21 8ns access - 8 11 DQ11 27 Vss 43 DQ26 59 DQ29 10ns access -10 12 Vcc 28 /WE 44 DQ18 60 DQ22 12ns access -12 13 A0 29 A15 45 DQ27 61 DQ30 15ns access -15 14 A7 30 A14 46 DQ19 62 DQ23 -20 15 A1 31 /CE2 47 A3 63 DQ31 16 A8 32 /CE1 48 A10 64 Vss 20ns access w Packages 64-pin SIMM M SIMM TOP VIEW URL: www.hbe.co.kr Rev. 1.0 (September / 2002). 1 HANBit Electronics Co.,Ltd. HANBit HMS12832M4V FUNCTIONAL BLOCK DIAGRAM DQ0 - DQ31 A0 - A16 32 17 A0-16 /WE DQ 0-7 U1 /OE /CE /CE1 A0-16 /WE DQ 8-15 U2 /OE /CE /CE2 A0-16 /WE DQ16-23 U3 /OE /CE /CE3 A0-16 /WE /WE /OE /OE DQ24-31 U4 /CE PRESENCE-DETECT /CE4 PD0 = Open PD1 = Open TRUTH TABLE MODE /OE /CE /WE DQ POWER STANDBY X H X HIGH-Z STANDBY NOT SELECTED H L H HIGH-Z ACTIVE READ L L H Dout ACTIVE WRITE X L L Din ACTIVE URL: www.hbe.co.kr Rev. 1.0 (September / 2002). 2 HANBit Electronics Co.,Ltd. HANBit HMS12832M4V ABSOLUTE MAXIMUM RATINGS* PARAMETER SYMBOL RATING VIN,OUT -0.5V to 4.6V Voltage on Vcc Supply Relative to Vss VCC -0.5V to 4.6V Power Dissipation PD 4.0W o -65 C to +150oC 0oC to +70oC Voltage on Any Pin Relative to Vss Storage Temperature TSTG Operating Temperature TA w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED DC OPERATING CONDITIONS ( TA=0 to 70 o C ) PARAMETER * SYMBOL MIN TYP. MAX Supply Voltage VCC 3.0V 3.3V 3.6V Ground VSS 0 0 0 Input High Voltage VIH 2.2 - Vcc+0.5V** Input Low Voltage VIL -0.5* - 0.8V VIL(Min.) = -2.0V ac (Pulse Width ≤ 10ns) for I ≤ 20 mA ** VIH(Min.) = Vcc+2.0V ac (Pulse Width ≤ 10ns) for I ≤ 20 mA DC AND OPERATING CHARACTERISTICS (1)(0oC ≤ TA ≤ 70 oC ; Vcc = 3.3V ± 10% ) PARAMETER TEST CONDITIONS Input Leakage Current VIN=Vss to Vcc /CE=VIH or /OE =VIH or /WE=VIL Output Leakage Current VOUT=Vss to VCC SYMBOL MIN MAX UNITS ILI -8 8 µA IL0 -8 8 µA 2.4 Output High Voltage IOH = -4.0mA VOH Output Low Voltage IOL = 8.0mA VOL V 0.4 V * Vcc=3.3V, Temp=25 oC DC AND OPERATING CHARACTERISTICS (2) DESCRIPTION Power Supply Current:Operating Power Supply Current:Standby TEST CONDITIONS SYMBOL Rev. 1.0 (September / 2002). UNIT -8 -10 -12 ICC 640 620 600 mA ISB 200 200 200 mA ISB1 20 20 20 mA Min. Cycle, 100% Duty /CE=VIL, VIN=VIH or VIL, IOUT=0mA Min. Cycle, /CE=VIH f=0MHZ, /CE≥VCC-0.2V, VIN≥ VCC-0.2V or VIN≤0.2V URL: www.hbe.co.kr MAX 3 HANBit Electronics Co.,Ltd. HANBit HMS12832M4V CAPACITANCE (TA =25 oC , f= 1.0Mhz) DESCRIPTION Input /Output Capacitance Input Capacitance TEST CONDITIONS SYMBOL MAX UNIT VI/O=0V CI/O 32 PF CIN 24 PF VIN=0V * NOTE : Capacitance is sampled and not 100% tested AC CHARACTERISTICS (0oC ≤ TA ≤ 70 oC ; Vcc = 3.3V ± 0.3V, unless otherwise specified) Test conditions PARAMETER VALUE Input Pulse Level 0V to 3V Input Rise and Fall Time 3ns Input and Output Timing Reference Levels 1.5V Output Load See below Output Load (B) Output Load (A) for tHZ, tLZ, tWHZ, tOW, tOLZ & tOHZ VL=1.5V +3.3V 50Ω DOUT 319Ω DOUT Z0=50Ω 353Ω 30pF 5pF* READ CYCLE -10 PARAMETER -12 -15 SYMBOL UNIT MIN MAX MAX MAX tRC Address Access Time tAA 10 12 15 ns Chip Select to Output tCO 10 12 15 ns Output Enable to Output tOE 5 6 7 ns Output Enable to Low-Z Output tOLZ 0 0 0 ns Chip Enable to Low-Z Output tLZ 3 3 3 ns Output Disable to High-Z Output tOHZ 0 5 0 6 0 7 ns Chip Disable to High-Z Output tHZ 0 5 0 6 0 7 ns Output Hold from Address Change tOH 3 3 3 ns Chip Select to Power Up Time tPU 0 0 0 ns Chip Select to Power Down Time tPD - Rev. 1.0 (September / 2002). 4 12 MIN Read Cycle Time URL: www.hbe.co.kr 10 MIN 10 15 12 ns 15 HANBit Electronics Co.,Ltd. ns HANBit HMS12832M4V WRITE CYCLE PARAMETER -10 SYMBOL MIN -12 MAX MIN -15 MAX MIN MAX UNIT Write Cycle Time tWC 10 12 15 ns Chip Select to End of Write tCW 6 8 10 ns Address Set-up Time tAS 0 0 0 ns Address Valid to End of Write tAW 7 8 9 ns Write Pulse Width tWP 7 8 9 ns Write Recovery Time tWR 0 0 0 ns Write to Output High-Z tWHZ 0 Data to Write Time Overlap tDW 5 6 7 ns Data Hold from Write Time tDH 0 0 0 ns End of Write to Output Low-Z tOW 3 3 3 ns 5 0 6 0 7 ns TIMING DIAGRAMS Please refer to timing diagram chart. FUNCTIONAL DESCRIPTION /CE /WE /OE MODE I/O PIN SUPPLY CURRENT H X* X Not Select High-Z l SB, l SB1 L H H Output Disable High-Z lCC L H L Read DOUT lCC L L X Write DIN lCC Note: X means Don't Care URL: www.hbe.co.kr Rev. 1.0 (September / 2002). 5 HANBit Electronics Co.,Ltd. HANBit HMS12832M4V PACKAGING INFORMATION 98.04 mm 10.16 mm 6.35 mm 16 mm 1 64 2.03 mm 1.02 mm 6.35 mm 1.27 mm 3.34 mm 85.09 mm 2.54 mm 0.25 mm MAX MIN 1.29±0.08 mm Gold : 1.04±0.10 mm 1.27 Solder : 0.914±0.10 mm (Solder & Gold Plating Lead) ORDERING INFORMATION Part Number Density Org. Package HMS12832M4V-8 512KByte 128KX 32bit 64 Pin-SIMM HMS12832M4V-10 512KByte 128KX 32bit HMS12832M4V-12 512KByte HMS12832M4V-15 HMS12832M4V-20 URL: www.hbe.co.kr Rev. 1.0 (September / 2002). Component Vcc Access Time 4EA 3.3V 8ns 64 Pin-SIMM 4EA 3.3V 10ns 128KX 32bit 64 Pin-SIMM 4EA 3.3V 12ns 512KByte 128KX 32bit 64 Pin-SIMM 4EA 3.3V 15ns 512KByte 128KX 32bit 64 Pin-SIMM 4EA 3.3V 20ns 6 Number HANBit Electronics Co.,Ltd.