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Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries. (Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics. DATA SHEET MOS FIELD EFFECT TRANSISTOR NP55N055SUG SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The NP55N055SUG is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE NP55N055SUG TO-252 (MP-3ZK) FEATURES (TO-252) • Channel temperature 175 degree rating • Super low on-state resistance RDS(on) = 10 mΩ MAX. (VGS = 10 V, ID = 28 A) • Low Ciss: Ciss = 3500 pF TYP. ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 55 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25°C) ID(DC) ±55 A ID(pulse) ±220 A Total Power Dissipation (TC = 25°C) PT1 77 W Total Power Dissipation (TA = 25°C) PT2 1.2 W Channel Temperature Tch 175 °C Tstg −55 to +175 °C IAR 27 A EAR 73 mJ Drain Current (pulse) Note1 Storage Temperature Repetitive Avalanche Current Note2 Repetitive Avalanche Energy Note2 Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Tch < 150°C, VDD = 28 V, RG = 25 Ω, VGS = 20 → 0 V THERMAL RESISTANCE Channel to Case Thermal Resistance Rth(ch-C) 1.95 °C/W Channel to Ambient Thermal Resistance Rth(ch-A) 125 °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D16863EJ2V0DS00 (2nd edition) Date Published January 2005 NS CP(K) Printed in Japan The mark shows major revised points. 2004 NP55N055SUG ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 55 V, VGS = 0 V 1.0 µA Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±100 nA VGS(off) VDS = VGS, ID = 250 µA 2.0 3.0 4.0 V | yfs | VDS = 10 V, ID = 28 A 11 22 RDS(on) VGS = 10 V, ID = 28 A Gate Cut-off Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance Note S 7.7 10 mΩ Input Capacitance Ciss VDS = 25 V 3500 5250 pF Output Capacitance Coss VGS = 0 V 260 390 pF Reverse Transfer Capacitance Crss f = 1 MHz 160 290 pF Turn-on Delay Time td(on) VDD = 28 V, ID = 28 A 24 53 ns VGS = 10 V 18 45 ns RG = 0 Ω 60 120 ns 8 20 ns 90 nC Rise Time tr Turn-off Delay Time td(off) Fall Time tf Total Gate Charge QG VDD = 44 V 60 Gate to Source Charge QGS VGS = 10 V 15 nC QGD ID = 55 A 21 nC Gate to Drain Charge Body Diode Forward Voltage Note VF(S-D) IF = 55 A, VGS = 0 V 0.95 Reverse Recovery Time trr IF = 55 A, VGS = 0 V 38 ns Reverse Recovery Charge Qrr di/dt = 100 A/µs 45 nC 1.5 V Note Pulsed TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω D.U.T. L 50 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME RL RG PG. VDD VGS VGS Wave Form 0 VGS 10% 90% VDD VDS 90% BVDSS IAS VDS ID VDS τ τ = 1 µs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 2 50 Ω 0 10% 10% tr td(off) Wave Form VDD Starting Tch 90% VDS VGS 0 RL VDD Data Sheet D16863EJ2V0DS td(on) ton tf toff NP55N055SUG TYPICAL CHARACTERISTICS (TA = 25°C) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 120 100 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 80 60 40 20 0 0 0 25 50 75 100 125 150 175 0 25 TC - Case Temperature - °C 50 75 100 125 150 175 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA 1000 ID(pulse) = 220 A PW = 100 µs 100 ID(DC) = 55 A 10 1 ms DC 1 10 ms TC = 25°C Single pulse 0.1 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth - Transient Thermal Resistance - °C/W ID - Drain Current - A RDS(on) Limited (at VGS = 10 V) Rth(ch-A) = 125°C/W 100 10 Rth(ch-C) = 1.95°C/W 1 0.1 Single pulse 0.01 100 µ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D16863EJ2V0DS 3 NP55N055SUG FORWARD TRANSFER CHARACTERISTICS 1000 260 240 220 200 180 160 140 120 100 80 60 40 20 0 Pulsed VDS = 10 V Pulsed 100 ID - Drain Current - A ID - Drain Current - A DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE VGS = 10 V TA = −55°C −25°C 25°C 75°C 125°C 150°C 175°C 10 1 0.1 0.01 0.001 0 2 4 6 8 10 12 14 0 2 VDS - Drain to Source Voltage - V VGS(off) - Gate Cut-off Voltage - V 3.5 3.0 2.5 2.0 1.5 VGS = VDS ID = 250 µA 0 -100 -50 0 50 100 150 | yfs | - Forward Transfer Admittance - S FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 4.0 0.5 100 TA = −55°C 25°C 125°C 175°C 10 1 VDS = 10 V Pulsed 0 0.1 200 1 30 25 20 15 VGS = 10 V 5 Pulsed 0 10 100 1000 RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 1 100 1000 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 20 Pulsed 18 16 ID = 44 A 28 A 11 A 14 12 10 ID - Drain Current - A 4 10 ID - Drain Current - A Tch - Channel Temperature - °C 10 6 VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 1.0 4 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 VGS - Gate to Source Voltage - V Data Sheet D16863EJ2V0DS DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 20 18 Ciss, Coss, Crss - Capacitance - pF 16 14 12 10 8 6 VGS = 10 V ID = 28 A Pulsed 4 2 0 -100 Ciss 1000 Coss VGS = 0 V f = 1 MHz -50 0 50 100 150 200 0.1 Tch - Channel Temperature - °C 10 100 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 50 1000 VDD = 28 V VGS = 10 V RG = 0 Ω 100 VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns 1 VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS td(off) td(on) tr tf 10 10 VDD = 44 V 28 V 11 V 45 40 8 35 30 6 VGS 25 20 4 15 10 2 VDS 5 1 ID = 55 A 0 0 0.1 1 10 100 0 ID - Drain Current - A 10 20 30 40 50 60 70 QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 100 trr - Reverse Recovery Time - ns 1000 IF - Diode Forward Current - A Crss 100 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ NP55N055SUG 100 10 VGS = 10 V 0V 1 0.1 VGS = 0 V di/dt = 100 A/µs Pulsed 0.01 10 0 0.5 1 1.5 VF(S-D) - Source to Drain Voltage - V 0.1 1 10 100 IF - Diode Forward Current - A Data Sheet D16863EJ2V0DS 5 NP55N055SUG PACKAGE DRAWING (Unit: mm) TO-252 (MP-3ZK) 2.3±0.1 1.0 TYP. 6.5±0.2 5.1 TYP. 4.3 MIN. 0.5±0.1 No Plating 1.14 MAX. 3 0.51 MIN. 2 0.8 1 6.1±0.2 10.4 MAX. (9.8 TYP.) 4.0 MIN. 4 No Plating 0 to 0.25 0.5±0.1 0.76±0.12 2.3 2.3 1. Gate 2. Drain 3. Source 4. Fin (Drain) 1.0 EQUIVALENT CIRCUIT Drain Body Diode Gate Source Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. 6 Data Sheet D16863EJ2V0DS NP55N055SUG • The information in this document is current as of January, 2005. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. • NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. • NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E 02. 11-1