Spec. No. : C143L3 Issued Date : 2016.01.22 Revised Date : 2016.02.22 Page No. : 1/9 CYStech Electronics Corp. 30V N-channel Enhancement Mode MOSFET MTB020N03KL3 BVDSS ID@VGS=10V, TA=25°C 30V RDSON@VGS=10V, ID=4A 7.4A 21.4mΩ (typ) RDSON@VGS=4.5V, ID=3A 25.7mΩ (typ) Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • ESD protected gate • Pb-free lead plating package Symbol Outline SOT-223 MTB020N03KL3 D S G：Gate S：Source D：Drain D G Ordering Information Device MTB020N03KL3-0-T3-G Package SOT-223 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 :2500 pcs/tape & reel, 13” reel Product rank, zero for no rank products Product name MTB020N03KL3 CYStek Product Specification Spec. No. : C143L3 Issued Date : 2016.01.22 Revised Date : 2016.02.22 Page No. : 2/9 CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=10V, TA=25°C Continuous Drain Current @VGS=10V, TA=70°C Pulsed Drain Current *1 TA=25℃ Total Power Dissipation *2 TA=100℃ VDS VGS Operating Junction and Storage Temperature Range Note : *1. Pulse width limited by safe operating area Tj, Tstg 30 ±20 7.4 5.9 37 2.7 1.1 -55~+150 ID IDM PD Unit V A W °C 2 *2. Surface mounted on a 1 in pad of 2 oz. copper, t≤10s. Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol RθJC RθJA Value 18 45 (Note) Unit °C/W 2 Note : Surface mounted on a 1 in pad of 2 oz. copper, t≤10s; 120°C/W when mounted on minimum copper pad. Electrical Characteristics (Tj=25°C, unless otherwise noted) Symbol Static BVDSS ∆BVDSS/∆Tj VGS(th) IGSS IDSS *RDS(ON) *GFS Dynamic Ciss Coss Crss *td(ON) *tr *td(OFF) *tf MTB020N03KL3 Min. Typ. Max. Unit 30 1.0 - 0.02 21.4 25.7 4.5 2.5 ±10 1 25 27 35 - V V/°C V - 450 79 60 5.8 18.6 33.8 11.8 - Test Conditions S VGS=0V, ID=250μA Reference to 25°C, ID=250μA VDS=VGS, ID=250μA VGS=±16V, VDS=0V VDS=30V, VGS=0V VDS=24V, VGS=0V (Tj=70°C) ID=4A, VGS=10V ID=3A, VGS=4.5V VDS=10V, ID=4A pF VDS=15V, VGS=0, f=1MHz ns VDS=15V, ID=1A, VGS=10V, RG=6Ω μA mΩ CYStek Product Specification CYStech Electronics Corp. *Qg *Qgs *Qgd Source-Drain Diode *VSD *IS *ISM Trr Qrr - 12.3 1.3 4.2 - - 0.81 9.7 3.7 1.2 2.3 9.2 - Spec. No. : C143L3 Issued Date : 2016.01.22 Revised Date : 2016.02.22 Page No. : 3/9 nC VDS=24V, ID=4A, VGS=5V V VGS=0V, IS=2A A ns nC VGS=0V, IF=2.3A, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Recommended soldering footprint MTB020N03KL3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C143L3 Issued Date : 2016.01.22 Revised Date : 2016.02.22 Page No. : 4/9 Typical Characteristics Brekdown Voltage vs Junction Temperature Typical Output Characteristics 1.4 40 ID, Drain Current (A) BVDSS, Normalized Drain-Source Breakdown Voltage 10V,9V,8V,7V,6V,5V 35 30 4.5V 25 4V 20 15 3.5V 10 5 1.2 1 0.8 0.6 ID=250μA, VGS=0V VGS=3V 0.4 0 0 1 2 3 4 -75 -50 -25 5 VDS, Drain-Source Voltage(V) Reverse Drain Current vs Source-Drain Voltage Static Drain-Source On-State resistance vs Drain Current 100 VSD, Source-Drain Voltage(V) R DS(on), Static Drain-Source On-State Resistance(mΩ) 1.2 VGS=4.5V VGS=10V 10 Tj=25°C VGS=0V 1 0.8 Tj=150°C 0.6 0.4 0.2 0.01 0.1 1 10 ID, Drain Current(A) 100 0 4 8 12 16 IDR , Reverse Drain Current(A) 20 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 2.4 R DS(on), Normalized Static DrainSource On-State Resistance 150 R DS(on), Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID=4A 120 90 60 30 2 VGS=10V, ID=4A RDS(ON) @Tj=25°C : 21.4mΩ typ. 1.6 1.2 0.8 VGS=4.5V, ID=3A RDS(ON) @Tj=25°C : 25.7mΩtyp. 0.4 0 0 0 MTB020N03KL3 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) CYStek Product Specification Spec. No. : C143L3 Issued Date : 2016.01.22 Revised Date : 2016.02.22 Page No. : 5/9 CYStech Electronics Corp. Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage VGS(th), Normalized Threshold Voltage 1000 Capacitance---(pF) Ciss C oss 100 Crss 1.4 1.2 ID=1mA 1 0.8 0.6 ID=250μA 0.4 10 0 5 10 15 20 VDS, Drain-Source Voltage(V) 25 -75 -50 -25 30 Forward Transfer Admittance vs Drain Current 50 75 100 125 150 175 10 VDS=10V VDS=24V 1 VDS=15V 0.1 Ta=25°C Pulsed 0.01 0.001 8 VGS, Gate-Source Voltage(V) GFS , Forward Transfer Admittance(S) 25 Gate Charge Characteristics 10 VDS=15V 6 4 2 0.01 0.1 1 ID, Drain Current(A) 0 10 2 4 6 8 10 Qg, Total Gate Charge(nC) 12 14 Maximum Drain Current vs Junction Temperature 100 9 10 ID, Maximum Drain Current(A) RDSON Limited 10μs 100μs 1 1ms 10ms TA=25°C, Tj=150°C VGS=10V, RθJA=45°C/W Single Pulse 0.1 ID=4A 0 Maximum Safe Operating Area ID, Drain Current(A) 0 Tj, Junction Temperature(°C) 100ms DC 8 7 6 5 4 3 2 TA=25°C, VGS=10V, RθJA=45°C/W 1 0 0.01 0.1 MTB020N03KL3 1 10 VDS, Drain-Source Voltage(V) 100 25 50 75 100 125 Tj, Junction Temperature(°C) 150 175 CYStek Product Specification Spec. No. : C143L3 Issued Date : 2016.01.22 Revised Date : 2016.02.22 Page No. : 6/9 CYStech Electronics Corp. Typical Characteristics(Cont.) Typical Transfer Characteristics 40 50 VDS=10V 35 TJ(MAX) =150°C TA=25°C RθJA=45°C/W 40 30 25 Power (W) ID, Drain Current(A) Single Pulse Power Rating, Junction to Ambient (Note on page 2) 20 15 30 20 10 10 5 0 0 1 2 3 4 VGS, Gate-Source Voltage(V) 0 0.0001 5 0.001 0.01 0.1 1 Pulse Width(s) 10 100 Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=45°C/W 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse 0.01 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 t1, Square Wave Pulse Duration(s) MTB020N03KL3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C143L3 Issued Date : 2016.01.22 Revised Date : 2016.02.22 Page No. : 7/9 Reel Dimension Carrier Tape Dimension MTB020N03KL3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C143L3 Issued Date : 2016.01.22 Revised Date : 2016.02.22 Page No. : 8/9 Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTB020N03KL3 CYStek Product Specification Spec. No. : C143L3 Issued Date : 2016.01.22 Revised Date : 2016.02.22 Page No. : 9/9 CYStech Electronics Corp. SOT-223 Dimension A Marking: B Device Name C 1 2 TYN3 Date Code 3 D E F H G Style: Pin 1.Gate 2.Drain 3.Source a1 I a2 3-Lead SOT-223 Plastic Surface Mounted Package CYStek Package Code: L3 *: Typical Inches Min. Max. 0.1142 0.1220 0.2638 0.2874 0.1299 0.1457 0.0236 0.0315 *0.0906 0.2480 0.2638 DIM A B C D E F Millimeters Min. Max. 2.90 3.10 6.70 7.30 3.30 3.70 0.60 0.80 *2.30 6.30 6.70 DIM G H I a1 a2 Inches Min. Max. 0.0551 0.0709 0.0098 0.0138 0.0008 0.0039 *13o 0o 10 o Millimeters Min. Max. 1.40 1.80 0.25 0.35 0.02 0.10 *13o 0o 10 o Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTB020N03KL3 CYStek Product Specification