Data Sheet, Rev. 2.3, Sept. 2011 BGA428 Gain and PCS Low Noise Amplifier RF & Protection Devices Edition 2011-09-02 Published by Infineon Technologies AG, 81726 München, Germany © Infineon Technologies AG 2011. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BGA428 BGA428, Gain and PCS Low Noise Amplifier Revision History: 2011-09-02, Rev. 2.3 Previous Version: 2007-11-06, Rev. 2.3 Page Subjects (major changes since last revision) 6 Correction of typing error in Table 3, (IIP3 is -9 dBm) Trademarks SIEGET® is a registered trademark of Infineon Technologies AG. Data Sheet 3 Rev. 2.3, 2011-09-02 BGA428 Silicon Germanium Broadband MMIC Amplifier 1 Silicon Germanium Broadband MMIC Amplifier Feature • High gain, GMA = 20 dB at 1.8 GHz • Low noise figure, NF = 1.4 dB at 1.8 GHz • Prematched • Ideal for GSM, DCS1800, PCS1900 • Open collector output • Typical supply voltage: 2.4 - 3 V • SIEGET®-45 technology • Pb-free (RoHS compliant) package 4 5 6 1 2 3 SOT363 VCC,1 OUT, 3 IN, 6 GS, 4 GND, 2;5 Figure 1 BGA428_Pin_connection.vsd Pin connection Description BGA428 is a high gain, low noise amplifier. Type Package Marking BGA428 SOT363 PGs Note: ESD: Electrostatic discharge sensitive device, observe handling precaution Data Sheet 4 Rev. 2.3, 2011-09-02 BGA428 Silicon Germanium Broadband MMIC Amplifier Maximum Ratings Table 1 Maximum ratings Parameter Symbol Limit Value Unit Device voltage VCC Vout VGS Iin Itot Pin Ptot TJ TOP TSTG 4 V 4 V 3.5 V 0.5 mA 12 mA 8 dBm 50 mW 150 °C -40... 85 °C -65... 150 °C Voltage at pin Out Voltage at pin GS Current into pin In 1) Total device current Input power2) Total power dissipation, TS < 125 °C 3) Junction temperature Operating temperature range Storage temperature range 1) Itot = Current into Out + Current into VCC 2) Valid for: a) ZL = 50 Ω, ZS = 50 Ω, VCC = 2.7 V, Vout = 2.7 V, VGS = 0.0 V, GND = 0.0 V b) ZL = 50 Ω, ZS = 50 Ω, VCC = 0.0 V, Vout = 0.0 V, VGS = 2.7 V, GND = 0.0 V 3) TS is measured on the ground lead at the soldering point Note: All Voltages refer to GND-Node Thermal resistance Table 2 Thermal resistance Parameter 1) Junction - soldering point Symbol Value Unit RthJS 220 K/W 1) For calculation of RthJA please refer to Application Note Thermal Resistance Data Sheet 5 Rev. 2.3, 2011-09-02 BGA428 Electrical Characteristics 2 Electrical Characteristics 2.1 Electrical characteristics at TA = 25 °C (measured in test circuit specified in Figure 2), VCC = 2.7 V, Frequency = 1.8 GHz, unless otherwise specified Table 3 Electrical Characteristics Parameter Symbol Values Min. Typ. GMA Noise figure (ZS = 50 Ω) NF Input power at 1 dB gain compression P-1dB Input third order intercept point IIP3 Total device current Itot Insertion loss in gain-step-mode LGS Maximum available power gain Unit Max. 20 dB 1.4 dB -19 dBm -9 dBm 8.2 mA 13.5 dB Note / Test Condition VCC = 0.0 V, VCTRL = 2.7 V, RCRRL = 3 kΩ R eference Plane V CTRL RCTRL =3kΩ GS Bias-T OUT Out GND In Bias-T IN V CC Reference Plane 47pF 180pF 100nF Top View 2.7V BGA428_Test_Circuit.vsd Figure 2 Data Sheet Test Circuit for Electrical Characteristics and S-Parameter 6 Rev. 2.3, 2011-09-02 BGA428 Electrical Characteristics Table 4 S-Parameter at 2.7 V (see Electrical Characteristics for conditions) Frequency [GHz] S11 Mag S11 Ang S21 Mag S21 Ang S12 Mag S12 Ang S22 Mag S22 Ang 0.100 0.6756 -31.7 58.775 -19.6 0.0005 153.5 0.9491 -3.9 0.200 0.5936 -53.6 47.806 -43.1 0.0014 138.4 0.9327 -6.3 0.300 0.5150 -71.4 39.232 -59.5 0.0021 119.0 0.9174 -8.3 0.400 0.4587 -86.6 31.740 -71.8 0.0028 104.9 0.9035 -10.3 0.600 0.4004 -110.7 23.868 -89.6 0.0042 105.9 0.8807 -14.0 0.800 0.3743 -129.1 18.509 -103.2 0.0063 94.3 0.8593 -17.7 1.000 0.3743 -143.0 14.825 -114.5 0.0082 92.4 0.8352 -21.4 1.200 0.3816 -154.5 12.288 -124.7 0.0093 87.2 0.8116 -25.1 1.400 0.3922 -164.4 10.353 -134.2 0.0110 85.3 0.7865 -28.7 1.600 0.4086 -1.72.4 8.879 -143.2 0.0132 79.4 0.7597 -32.2 1.800 0.4265 -178.9 7.732 -151.4 0.0141 79.4 0.7309 -36.0 1.900 0.4314 -178.8 7.214 -155.2 0.0146 76.1 0.7199 -37.5 2.000 0.4371 176.1 6.771 -159.1 0.0150 77.0 0.7097 -39.1 2.200 0.4505 171.2 5.976 -166.6 0.0169 75.2 0.6791 -42.3 2.400 0.4640 167.2 5.298 -173.5 0.0181 73.2 0.6593 -45.6 3.000 0.4935 155.9 3.935 167.0 0.0217 68.3 0.5925 -53.3 4.000 0.5181 141.2 2.605 139.2 0.0282 65.1 0.5284 -64.9 5.000 0.5202 126.9 1.911 113.6 0.0319 62.2 0.4829 -75.1 6.000 0.5128 110.0 1.479 89.9 0.0489 56.0 0.4323 -81.7 Data Sheet 7 Rev. 2.3, 2011-09-02 BGA428 Electrical Characteristics 2.2 Application Circuit Characteristics (measured in test circuit specified in Figure 3), TA = 25 °C,VCC = 2.7 V, Frequency = 1.85 GHz, unless otherwise specified Table 5 Application Circuit Characteristics Parameter Symbol Values Min. |S21|2 Noise figure (ZS = 50 Ω) NF Input power at 1 dB gain compression P-1dB Input third order intercept point IIP3 Total device current Itot Insertion loss in gain-step-mode LGS Insertion power gain Typ. Unit Max. 19 dB 1.4 dB -19 dBm -9 dBm 8.2 mA 13.5 dB Note / Test Condition VCC = 0.0 V, VCTRL = 2.7 V, RCRRL = 3 kΩ 47pF 180pF Supply 3kΩ GS Vcc VCTRL 3.9nH RFin 150pF In BGA428 Out 0.9pF RFout GND BGA428_Application_Circuit.vsd Figure 3 Data Sheet Application Circuit for 1850 MHz 8 Rev. 2.3, 2011-09-02 BGA428 Measured Parameters 3 Measured Parameters Refer to the application circuit given in Figure 3 Power Gain |S21|2=f(f) VCC = 2.7V, VOut=2.7V Power Gain |S21|2=f(f) VCC = 2.7V, VOut=2.7V 20 23 15 22 21 5 Insertion Gain [dB] Insertion Gain [dB] 10 0 −5 20 19 18 −10 17 −15 16 −20 −25 0 1 2 3 4 5 15 1.7 6 1.8 Frequency [GHz] Off−Gain |S21|2=f(VCTRL) V = 0.0V, V =0.0V,R CC Out 1.9 2 2.1 2.5 3 Frequency [GHz] Matching |S11|,|S22|=f(f) V = 2.7V, V =2.7V =2.7kΩ CC CTRL −10 Out 0 S22 −11 −5 −12 1800MHz S11 −10 −14 |S |, |S | [dB] 22 1990MHz −15 −15 11 Insertion Gain [dB] −13 −16 −20 −17 −18 −25 −19 −20 −30 2 2.2 2.4 2.6 2.8 3 3.2 1 Data Sheet 1.5 2 Frequency [GHz] VCTRL [V] 9 Rev. 2.3, 2011-09-02 BGA428 Measured Parameters Input Compression Point P =f(f) Device Current I=f(ϑ) V =2.7V, V =2.7V CC Out −1dB −16.5 9 8.8 −17 −17.5 8.4 Device Current [mA] Input Compression Point [dBm] 8.6 VCC=2.7V −18 −18.5 V =2.85V CC 8.2 8 7.8 7.6 −19 V =2.4V CC 7.4 −19.5 7.2 −20 1800 1850 1900 1950 7 −20 2000 Frequency [MHz] 0 20 40 60 80 Temperature [°C] Insertion Gain |S21|2=f(ϑ) V =2.7V, V =2.7V CC Out 25 24 23 22 f=1800MHz 20 21 |S |2 [dB] 21 19 f=1990MHz 18 17 16 15 −20 0 20 40 60 80 Temperature [°C] Data Sheet 10 Rev. 2.3, 2011-09-02 BGA428 Package Information 4 Package Information 2 ±0.2 0.9 ±0.1 +0.1 0.2 -0.05 6x 0.1 0.1 MAX. M 0.1 Pin 1 marking 1 2 3 A 1.25 ±0.1 4 0.1 MIN. 5 2.1 ±0.1 6 0.15 +0.1 -0.05 0.65 0.65 0.2 M A GPS05604 Figure 4 Package Outline SOT363 0.2 2.3 8 4 Pin 1 marking Figure 5 Data Sheet 1.1 2.15 CSOG5902 Tape for SOT363 11 Rev. 2.3, 2011-09-02