Rohm EMX5 High transition frequency (dual transistors) Datasheet

EMX5 / UMX5N / IMX5
Transistors
High transition frequency (dual transistors)
EMX5 / UMX5N / IMX5
zDimensions (Unit : mm)
zFeatures
1) Two 2SC3838K chips in a EMT or UMT or SMT package.
2) High transition frequency. (fT=3.2GHz)
3) Low output capacitance. (Cob=0.9pF)
EMX6
zEquivalent circuits
EMX5 / UMX5N
(3)
(2)
IMX5
(1)
(4)
(5)
ROHM : EMT6
(6)
Each lead has same dimensions
UMX5N
Tr2
Tr2
Tr1
Tr1
(4)
(5)
(6)
(3)
(2)
(1)
zAbsolute maximum ratings (Ta=25°C)
Symbol
Limits
Unit
Collector-base voltage
Parameter
VCBO
20
V
Collector-emitter voltage
VCEO
11
V
Emitter-base voltage
VEBO
3
V
IC
50
mA
Collector current
Collector power
dissipation
EMX5 / UMX5N
IMX5
150(TOTAL)
Pc
300(TOTAL)
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
ROHM : UMT6
EIAJ : SC-88
Each lead has same dimensions
IMX5
∗1
∗2
∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.
zPackage, marking, and packaging specifications
Type
EMX5
UMX5N
IMX5
Package
EMT5
UMT6
SMT6
Marking
Code
X5
T2R
X5
TR
X5
T108
Basic ordering unit (pieces)
8000
3000
3000
ROHM : SMT6
EIAJ : SC-74
Each lead has same dimensions
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
Rev.B
1/2
EMX5 / UMX5N / IMX5
Transistors
zElectrical characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
Parameter
BVCBO
20
−
−
V
IC=10µA
Conditions
Collector-emitter breakdown voltage
BVCEO
11
−
−
V
IC=1mA
Emitter-base breakdown voltage
Collector cutoff current
BVEBO
ICBO
3
−
−
−
−
0.5
V
µA
IE=10µA
VCB=10V
Emitter cutoff current
IEBO
−
−
0.5
µA
DC current transfer ratio
hFE
56
−
120
−
VCE/IC=10V/5mA
IC/IB=10mA/5mA
VCE(sat)
−
−
0.5
V
Transition frequency
fT
3.2
−
GHz
Output capacitance
Cob
1.4
−
0.9
1.55
pF
Collector-emitter saturation voltage
VEB=2V
∗
VCE/IE=10V/−10mA, f=500MHz
VCB/f=10V/1MHz, IE=0A
∗Transition frequency of the device.
200
100
50
20
0.5
1
2
5
10
20
50
200
100
50
Ic/IB=10
20
Ic/IB=2
10
0.1 0.2
COLLECTOR CURRENT : IC (mA)
2.0
Cob
Cre
0.5
0.2
0.1
0.1 0.2
0.5
1
2
5
10
20
1
2
5
10
20
2.0
1.0
0.5
0.2
0.1
−0.1 −0.2
50
50
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.4 Capacitance vs. reverse bias voltage
50
−0.5
−1
−2
−5
−10 −20
−50
EMITTER CURRENT : IE (mA)
Fig.2 Collector-emitter saturation voltage
vs. collector current
COLLECTOR TO BASE TIME CONSTANT : Cc rbb'(ps)
OUTPUT CAPACITANCE : Cob (pF)
FEEDBACK CAPACITANCE : Cre (pF)
Ta=25°C
f=1MHz
IE=0A
1.0
0.5
Ta=25°C
VCE=10V
COLLECTOR CURRENT : IC (mA)
Fig.1 DC current gain vs. collector current
5.0
5.0
Ta=25°C
Fig.3 Gain bandwidth product vs. emitter current
Ta=25°C
VCE=6V
f=500MHz
Ta=25°C
VCE=10V
f=31.8MHz
NOISE FIGURE : NF (dB)
10
0.1 0.2
500
TRANSITION FREQUENCY : fT (GHz)
Ta=25°C
VCE=10V
500
COLLECTOR SATURATION VOLTAGE : VCE(sat)(mV)
DC CURRENT TRANSFER RATIO : hFE
zElectrical characteristics curves
20
10
5.0
20
10
2.0
1.0
0.1 0.2
0.5
1
2
5
10
20
50
COLLECTOR CURRENT : IC (mA)
Fig.5 Collector to base time constant
vs. collector current characteristics
0
0.1 0.2
0.5
1
2
5
10
20
50
COLLECTOR CURRENT : IC (mA)
Fig.6 Noise factor vs. collector current characteristics
Rev.B
2/2
Appendix
Notes
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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
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whatsoever nature in the event of any such infringement, or arising from or connected with or related
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Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
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exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
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range of the specifications or due to non-compliance with the NOTES specified in this catalog.
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Appendix1-Rev2.0
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