ON NTMFS5C410NL Power mosfet 40 v, 302 a, single nâ channel Datasheet

NTMFS5C410NL
Power MOSFET
40 V, 0.9 mW, 302 A, Single N−Channel
Features
•
•
•
•
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
These Devices are Pb−Free and are RoHS Compliant
http://onsemi.com
V(BR)DSS
RDS(ON) MAX
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
Drain−to−Source Voltage
VDSS
40
V
Gate−to−Source Voltage
VGS
±20
V
ID
302
A
Continuous Drain
Current RqJC
(Notes 1, 3)
TC = 25°C
Power Dissipation
RqJC (Note 1)
Continuous Drain
Current RqJA
(Notes 1, 2, 3)
Steady
State
TC = 100°C
TC = 25°C
Power Dissipation
RqJA (Notes 1 & 2)
Pulsed Drain Current
Steady
State
PD
G (4)
A
46
S (1,2,3)
PD
W
3.2
900
A
TJ, Tstg
−55 to
+150
°C
IS
162
A
Single Pulse Drain−to−Source Avalanche
Energy (IL(pk) = 29 A)
EAS
706
mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Source Current (Body Diode)
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Unit
Junction−to−Case − Steady State
RqJC
0.9
°C/W
Junction−to−Ambient − Steady State (Note 2)
RqJA
39
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2014
July, 2014 − Rev. 1
1
MARKING
DIAGRAM
D
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
Parameter
N−CHANNEL MOSFET
1.3
IDM
Operating Junction and Storage Temperature
D (5)
29
TA = 100°C
TA = 25°C, tp = 10 ms
302 A
1.3 mW @ 4.5 V
W
139
56
ID
TA = 100°C
TA = 25°C
0.9 mW @ 10 V
40 V
191
TC = 100°C
TA = 25°C
ID MAX
1
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
5C410L
A
Y
W
ZZ
S
S
S
G
D
5C410L
AYWZZ
D
D
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Lot Traceability
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
Publication Order Number:
NTMFS5C410NL/D
NTMFS5C410NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
40
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
V
21.2
VGS = 0 V,
VDS = 40 V
mV/°C
TJ = 25 °C
1.0
TJ = 125°C
250
IGSS
VDS = 0 V, VGS = 20 V
VGS(TH)
VGS = VDS, ID = 250 mA
100
mA
nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Threshold Temperature Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
Forward Transconductance
RDS(on)
1.2
2.0
−5.75
VGS = 10 V
ID = 50 A
0.71
0.9
VGS = 4.5 V
ID = 50 A
1.0
1.3
gFS
VDS = 15 V, ID = 50 A
V
mV/°C
190
mW
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
8862
VGS = 0 V, f = 1 MHz, VDS = 25 V
4156
pF
116
Total Gate Charge
QG(TOT)
VGS = 4.5 V, VDS = 20 V; ID = 50 A
66
Total Gate Charge
QG(TOT)
VGS = 10 V, VDS = 20 V; ID = 50 A
143
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
6.75
nC
21.4
VGS = 4.5 V, VDS = 20 V; ID = 50 A
Gate−to−Drain Charge
QGD
Plateau Voltage
VGP
2.7
22
td(ON)
20
V
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(OFF)
VGS = 4.5 V, VDS = 20 V,
ID = 50 A, RG = 1.0 W
tf
130
ns
66
177
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
VSD
VGS = 0 V,
IS = 50 A
TJ = 25°C
0.73
TJ = 125°C
0.6
tRR
ta
tb
1.2
V
79.5
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 50 A
QRR
39
ns
40.5
126
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2
NTMFS5C410NL
TYPICAL CHARACTERISTICS
200
180
10 V to 3.2 V
180
160
3.0 V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
160
140
120
2.8 V
100
80
60
40
100
80
TJ = 25°C
60
40
TJ = 125°C
TJ = −55°C
0
0.5
1.0
1.5
2.0
0
3.0
2.5
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.0013
0.0012
TJ = 25°C
ID = 50 A
0.0011
0.0010
0.0009
0.0008
0.0007
0.0006
3
4
5
6
7
8
9
10
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
120
20
20
0
4.0
0.0012
0.0011
TJ = 25°C
VGS = 4.5 V
0.0010
0.0009
0.0008
0.0007
VGS = 10 V
0.0006
0.0005
0.0004
10
20
30
40
50
60
VGS, GATE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.9
1M
1.7
VGS = 10 V
ID = 40 A
1.5
1.3
1.1
TJ = 125°C
10k
TJ = 85°C
1k
100
0.9
0.7
−50
TJ = 150°C
100k
IDSS, LEAKAGE (nA)
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE (W)
140
10
−25
0
25
50
75
100
125
150
5
10
15
20
25
30
35
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
http://onsemi.com
3
40
NTMFS5C410NL
11k
C, CAPACITANCE (pF)
VGS, GATE−TO−SOURCE VOLTAGE (V)
10
10k
CISS
9k
8k
COSS
7k
VGS = 0 V
TJ = 25°C
f = 1 MHz
6k
5k
4k
3k
2k
CRSS
1k
0
5
0
15
10
20
25
30
20
6
15
4
QGD
QGS
10
VDS = 20 V
TJ = 25°C
ID = 50 A
2
5
0
40
0
0
20
60
40
80
120
100
140
QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
td(off)
tf
tr
IS, SOURCE CURRENT (A)
46
td(on)
100
10
VGS = 4.5 V
VDD = 20 V
ID = 50 A
41
36
31
26
TJ = 125°C
21
16
11
TJ = 150°C
TJ = 25°C
6
1
TJ = −55°C
1
1
1000
25
8
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
10,00
t, TIME (ns)
35
30
QT
10
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TYPICAL CHARACTERISTICS
100
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
TC = 25°C
VGS ≤ 10 V
0.01 ms
0.1 ms
100
IDS (A)
IPEAK (A)
100
10 ms
dc
1 ms
TJ(initial) = 25°C
TJ(initial) = 100°C
10
10
RDS(on) Limit
Thermal Limit
Package Limit
1
1
0.1
1
10
1E−04
100
1E−03
VDS (V)
TIME IN AVALANCHE (s)
Figure 11. Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
http://onsemi.com
4
1E−02
NTMFS5C410NL
100
RqJA(t) (°C/W)
50% Duty Cycle
10
20%
10%
5%
1
2%
1%
NTMFS5C410NL 650 mm2, 2 oz., Cu Single Layer Pad
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device
Marking
Package
Shipping†
NTMFS5C410NLT1G
5C410L
DFN5
(Pb−Free)
1500 / Tape & Reel
NTMFS5C410NLT3G
5C410L
DFN5
(Pb−Free)
5000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
5
NTMFS5C410NL
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE H
2X
0.20 C
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
A
2
B
D1
2X
0.20 C
4X
E1
2
q
E
c
1
2
3
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
A1
4
TOP VIEW
0.10 C
3X
C
e
SEATING
PLANE
DETAIL A
A
0.10 C
SIDE VIEW
8X
b
0.10
C A B
0.05
c
3X
4X
1.270
0.750
4X
1.000
e/2
L
1
4
0.965
K
1.330
2X
0.905
2X
E2
PIN 5
(EXPOSED PAD)
G
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
SOLDERING FOOTPRINT*
DETAIL A
MILLIMETERS
MIN
NOM
MAX
0.90
1.00
1.10
0.00
−−−
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.15 BSC
4.70
4.90
5.10
3.80
4.00
4.20
6.15 BSC
5.70
5.90
6.10
3.45
3.65
3.85
1.27 BSC
0.51
0.61
0.71
1.20
1.35
1.50
0.51
0.61
0.71
0.05
0.17
0.20
3.00
3.40
3.80
0_
−−−
12 _
L1
M
0.495
4.530
3.200
0.475
D2
2X
1.530
BOTTOM VIEW
4.560
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
http://onsemi.com
6
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NTMFS5C410NL/D