ADPOW APTGF50X120E2 3 phase bridge npt igbt power module Datasheet

APTGF50X120E2
APTGF50X120P2
3 Phase bridge
NPT IGBT Power Module
VCES = 1200V
IC = 50A @ Tc = 80°C
Application
•
AC Motor control
Features
Non Punch Through (NPT) IGBT®
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
•
Pin out: APTGF50X120E2 (Long pins)
N-
U
V
W
P+
•
•
•
1 2 3 4 5 6 7 8 9 10 11 12
Benefits
•
•
•
•
•
•
•
Pin out: APTGF50X120P2 (Short pins)
N-
1 2
U
3 4
V
5 6
W
7 8
9 10
P+
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
11 12
Symbol
VCES
Parameter
Collector - Emitter Breakdown Voltage
IC
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
SCSOA
Short Circuit Safe Operating Area
TC = 25°C
Max ratings
1200
72
50
140
±20
350
Tj = 125°C
500A@1200V
TC = 25°C
TC = 80°C
TC = 25°C
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-4
APTGF50X120E2(P2) – Rev 0
Absolute maximum ratings
November, 2003
All ratings @ Tj = 25°C unless otherwise specified
APTGF50X120E2
APTGF50X120P2
ICES
Zero Gate Voltage Collector Current
VCE(on)
Collector Emitter on Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol
Cies
Coes
Cres
Td(on)
Tr
Td(off)
Tf
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Reverse diode ratings and characteristics
Symbol Characteristic
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
VGE = 0V, IC = 500µA
Tj = 25°C
VGE = 0V
VCE = 1200V
Tj = 125°C
Tj = 25°C
VGE =15V
IC = 50A
Tj = 125°C
VGE = VCE , IC = 2 mA
VGE = 20V, VCE = 0V
TJ
TSTG
TC
Torque
Wt
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
To Heatsink
Package Weight
1
Unit
V
mA
Typ
3300
500
220
44
Max
Unit
56
100
380
70
500
100
Tj = 25°C
Tj = 125°C
Typ
2.3
1.8
Max
2.8
Tj = 125°C
0.2
Tj = 25°C
2.8
Tj = 125°C
8
4.5
Min
Min
Symbol Characteristic
VISOL
0.8
4
2.5
3.1
5.5
1200
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 50A
RG = 22Ω
Junction to Case
Max
V
nA
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
Test Conditions
IF = 50A
VGE = 0V
IF = 50A
VR = 600V
di/dt =800A/µs
IF = 50A
VR = 600V
di/dt =800A/µs
Typ
3.0
3.7
6.5
200
Thermal and package characteristics
RthJC
Min
Min
IGBT
Diode
Typ
pF
100
M5
APT website – http://www.advancedpower.com
ns
Unit
V
µs
µC
Max
0.35
0.7
2500
-40
-40
-40
2
V
Unit
°C/W
V
150
125
125
3.5
185
°C
November, 2003
Symbol Characteristic
BVCES Collector - Emitter Breakdown Voltage
N.m
g
2-4
APTGF50X120E2(P2) – Rev 0
Electrical Characteristics
APTGF50X120E2
APTGF50X120P2
Package outline
Pin out: APTGF50X120E2 (Long pins)
ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :
APT website – http://www.advancedpower.com
3-4
APTGF50X120E2(P2) – Rev 0
November, 2003
1
APTGF50X120E2
APTGF50X120P2
Package outline
ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
4-4
APTGF50X120E2(P2) – Rev 0
November, 2003
Pin out: APTGF50X120P2 (Short pins)
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